JP3820408B2 - 蛍光体を用いた波長変換型発光ダイオードパッケージの製造方法 - Google Patents
蛍光体を用いた波長変換型発光ダイオードパッケージの製造方法 Download PDFInfo
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- JP3820408B2 JP3820408B2 JP2004076272A JP2004076272A JP3820408B2 JP 3820408 B2 JP3820408 B2 JP 3820408B2 JP 2004076272 A JP2004076272 A JP 2004076272A JP 2004076272 A JP2004076272 A JP 2004076272A JP 3820408 B2 JP3820408 B2 JP 3820408B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 72
- 238000006243 chemical reaction Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 238000005253 cladding Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVMHUALAQYRRBM-UHFFFAOYSA-N [P].[P] Chemical compound [P].[P] QVMHUALAQYRRBM-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
また、本発明の他の目的は、前記発光装置の製造方法を提供することにある。
110 基板
112 第1導電パターン
113 絶縁層
114 第2導電パターン
115 背面電極
116、118 第1及び第2連結バンプ
120 発光ダイオード
121 透明基板
125 発光構造物
126a、126b 第1及び第2電極
130 蛍光体層
Claims (4)
- 相互対向する第1及び第2面とその間を連結する側面とを有する構造から成り、透明基板と前記透明基板上に形成された第1及び第2導電型半導体層及び活性層を含み、前記第1及び第2電極は前記第1及び第2導電型半導体層上に各々形成され、前記第1及び第2電極が形成された前記第1面と対向する透明基板の一面は前記発光ダイオードの第2面として提供されて前記第1及び第2導電型半導体層及び活性層の側面に沿って所定の厚さで形成される発光ダイオードを製造する段階と、
上面に絶縁層を形成し下面には背面電極を形成した導電性基板を用意し、前記絶縁層上に第1導電パターンを形成し、前記絶縁層の一部を除去して露出された前記導電性基板の上面領域に第2導電パターンを形成して、前記第1及び第2導電パターンの一部領域に連結バンプを形成する段階と、
前記基板の上面に前記発光ダイオードを配置して前記発光ダイオードの第1及び第2電極を前記第1及び第2連結バンプに各々連結する段階と、
前記第1及び第2導電パターンのうち、少なくとも一つの上面において外部端子に連結するための端子連結領域にフォトレジストを形成する段階と、前記発光ダイオードが配置された前記基板上に蛍光体層を形成する段階と、前記フォトレジストを除去する段階とを有して、前記発光ダイオードの第2面と側面及び前記発光ダイオードの側面から延長された前記基板の上面まで所定の厚さで前記発光ダイオードから生成される光の波長を変換するための蛍光体層を形成する段階と、
を有することを特徴とする波長変換型発光装置の製造方法。 - 前記発光ダイオードは紫外線光または青色光を生成し、前記蛍光体層は前記前記発光ダイオードから生成された光を白色光に変換するための物質であることを特徴とする請求項1に記載の波長変換型発光装置の製造方法。
- 前記蛍光体層を形成する段階は、物理的蒸着工程、化学的蒸着工程及びスピンコーティング工程で成るグループから選択された一工程により行われることを特徴とする請求項1に記載の波長変換型発光装置の製造方法。
- 前記蛍光体層を形成する段階は、スパッタリング工程により行われることを特徴とする請求項1に記載の波長変換型発光装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030070716A KR20050034936A (ko) | 2003-10-10 | 2003-10-10 | 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법 |
Publications (2)
Publication Number | Publication Date |
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JP2005116998A JP2005116998A (ja) | 2005-04-28 |
JP3820408B2 true JP3820408B2 (ja) | 2006-09-13 |
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JP2004076272A Expired - Fee Related JP3820408B2 (ja) | 2003-10-10 | 2004-03-17 | 蛍光体を用いた波長変換型発光ダイオードパッケージの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20050077531A1 (ja) |
JP (1) | JP3820408B2 (ja) |
KR (1) | KR20050034936A (ja) |
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DE102018105653A1 (de) * | 2018-03-12 | 2019-09-12 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung einer anordung, anordnung und array |
TWI726685B (zh) * | 2020-04-16 | 2021-05-01 | 錼創顯示科技股份有限公司 | 微型發光元件顯示裝置 |
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JP2000208822A (ja) * | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP2001111109A (ja) | 1999-10-07 | 2001-04-20 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
US6603258B1 (en) * | 2000-04-24 | 2003-08-05 | Lumileds Lighting, U.S. Llc | Light emitting diode device that emits white light |
DE10039433B4 (de) * | 2000-08-11 | 2017-10-26 | Osram Opto Semiconductors Gmbh | Halbleiterchip für die Optoelektronik |
US6417019B1 (en) | 2001-04-04 | 2002-07-09 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting diode |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
KR100497121B1 (ko) * | 2002-07-18 | 2005-06-28 | 삼성전기주식회사 | 반도체 led 소자 |
US6642550B1 (en) * | 2002-08-26 | 2003-11-04 | California Micro Devices | Silicon sub-mount capable of single wire bonding and of providing ESD protection for light emitting diode devices |
JP4400327B2 (ja) * | 2003-09-11 | 2010-01-20 | セイコーエプソン株式会社 | タイル状素子用配線形成方法 |
KR20050034936A (ko) * | 2003-10-10 | 2005-04-15 | 삼성전기주식회사 | 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법 |
WO2005069388A1 (ja) * | 2004-01-20 | 2005-07-28 | Nichia Corporation | 半導体発光素子 |
US7279724B2 (en) * | 2004-02-25 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
US7087463B2 (en) * | 2004-08-04 | 2006-08-08 | Gelcore, Llc | Laser separation of encapsulated submount |
KR100576872B1 (ko) * | 2004-09-17 | 2006-05-10 | 삼성전기주식회사 | 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자 |
US7105863B1 (en) * | 2005-06-03 | 2006-09-12 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light source with improved life |
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2003
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2004
- 2004-03-03 US US10/790,724 patent/US20050077531A1/en not_active Abandoned
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KR20050034936A (ko) | 2005-04-15 |
JP2005116998A (ja) | 2005-04-28 |
US20050077531A1 (en) | 2005-04-14 |
US20060102915A1 (en) | 2006-05-18 |
US7399650B2 (en) | 2008-07-15 |
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