JP3775433B2 - 電子部品装置 - Google Patents
電子部品装置 Download PDFInfo
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- JP3775433B2 JP3775433B2 JP2005506743A JP2005506743A JP3775433B2 JP 3775433 B2 JP3775433 B2 JP 3775433B2 JP 2005506743 A JP2005506743 A JP 2005506743A JP 2005506743 A JP2005506743 A JP 2005506743A JP 3775433 B2 JP3775433 B2 JP 3775433B2
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Description
本発明のさらに他の特定の局面では、基板のx方向の線膨張係数をAxy方向の線膨張係数をAy、素子のx方向の線膨張係数をBxy方向の線膨張係数をBy、上記第1、第2の環状電極のx方向に延びる帯状部の外側辺の長さをdlxy方向に延びる帯状部の外側辺の長さをdlyとし、上記膨張差Qx、Qyを、Qx=|Ax−Bx|×dlx(mm/℃)と、Qy=|Ay−By|×dly(mm/℃)としたときに、膨張差Qx、Qyの内の大きい側の膨張差が2.2×10−5(mm/℃)以下とされている。
本発明のさらに他の特定の局面では、上記素子が弾性表面波素子である。
本発明に係る電子部品装置において、膨張差Qx、Qyの内の大きい側の膨張差を2.2×10−5(mm/℃)以下とした場合には、電子部品装置の耐熱衝撃寿命をより一層向上させることができる。
[図2]図1に示す電子部品装置の分解斜視図である。
[図3](a)は、図1に示す電子部品装置に用いているパッケージ基板の平面図であり、(b)は、(a)に示すA−A面で切断したときの断面図である。
[図4](a)は、図1に示す電子部品装置に用いている素子の平面図であり、(b)は、(a)に示すB−B面で切断したときの断面図である。
[図5](a)は、図1に示す電子部品装置に用いている、半田封止枠の平面図であり、(b)は、(a)に示すC−C面で切断したときの断面図である。
[図6]半田封止枠の厚みと、最大相当ひずみ振幅との関係を示す図である。
[図7]膨張差と最大相当ひずみ振幅との関係を示す図である。
[図8]曲げ剛性比と最大相当ひずみ振幅との関係を示す図である。
2…接合電極
3…第2の環状電極
4…半田封止枠
10…素子
11…圧電基板
12…IDT
13…入出力電極
14…第1の環状電極
15…バンプ
20…電子部品装置
一般の電子部品装置に要求されている耐熱衝撃寿命と同条件の熱衝撃を負荷したときの最大相当ひずみ振幅を、FEMシミュレーションを用いて算出すると2.2%であった。すなわち、最大相当ひずみ振幅を2.2%以下にすることができれば、一般の電子部品装置に要求される耐熱衝撃寿命を満足できることがわかった。
図1は、本発明の一実施形態に係る電子部品装置20の斜視図であり、図2は、電子部品装置20の分解斜視図である。電子部品装置20では、パッケージ基板1に素子10がフェースダウン実装されている。
図2(a)に示すように、IDT12、入出力電極13、環状電極14、及びバンプ15が設けられた素子10と、図2(b)に示すように、接合電極2、環状電極3、及び半田封止枠4が設けられたパッケージ基板1とを準備する。
ここで、電子部品装置20について、パッケージ基板1と素子10との間に生じる膨張差Qx、Qyを求める。
電子部品装置20における曲げ剛性比Rx、Ryを求めると、曲げ剛性比Rxは(0.253mm×2.0mm×340000MPa)/(0.353mm×2.0mm×230000MPa)、曲げ剛性比Ryは(0.253mm×2.0mm×340000MPa)/(0.353mm×2.0mm×230000MPa)となり、曲げ剛性比Rx、Ryは同じで、約0.54である。
上記本実施形態では、パッケージ基板1に半田封止枠4が形成されていたが、素子10に、半田封止枠4が形成されてもよいし、パッケージ基板1及び素子10の双方に形成されてもよい。双方に形成されている場合には、半田封止枠同士が接合されて封止される。
バンプ15は、金属バンプや半田バンプ以外に、Alバンプなどの卑金属バンプなどが用いられてもよい。
また、半田封止枠4は、パッケージ基板1に形成されているアース側回路パターン(図示せず)と接続するようにしてもよい。
Claims (5)
- 矩形板状であり表面と裏面とを有し、該矩形の1辺に沿うx方向の線膨張係数と、矩形の面内において該x方向と直交するy方向の線膨張係数とが異なり、前記表面に機能部が構成されており、かつ該機能部を囲むように第1の環状電極が形成されている素子と、
表面と裏面とを有し、該表面に前記第1の環状電極と対応する位置に第2の環状電極が形成されている基板と、
前記第1の環状電極及び前記第2の環状電極の内の少なくとも一方の表面に形成された半田封止枠とを備え、
前記第1、第2の環状電極及び前記半田封止枠は、それぞれx方向に延びる帯状部と、y方向に延びる帯状部とを有し、
前記半田封止枠によって前記素子と前記基板とが接合されており、前記素子の表面に形成された機能部が前記素子と前記基板との間に生じる空間に気密的に封止されている電子部品装置であって、
前記基板のx方向の線膨張係数をA x y方向の線膨張係数をA y 、前記素子のx方向の線膨張係数をB x y方向の線膨張係数をB y 、及び前記第1、第2の環状電極のx方向に延びる帯状部の外側辺の長さをdl x y方向に延びる帯状部の外側辺の長さをdl y とし、前記素子と前記基板とのx方向における膨張差をQx前記素子と前記基板とのy方向における膨張差をQyとし、Q x =|A x −B x |×dl x (mm/℃)と、Q y =|A y −B y |×dl y (mm/℃)としたときに、前記第1、第2の環状電極及び前記半田封止枠において、膨張差Qx、Qyの内の大きい側の膨張差が生じている方向に延びる帯状部の幅が、膨張差Qx、Qyの内の小さい側の膨張差が生じている方向に延びる帯状部の幅よりも狭くされていることを特徴とする電子部品装置。 - 前記半田封止枠の厚みが18μm以上であることを特徴とする請求項1に記載の電子部品装置。
- 前記膨張差Qx、Qyの内の大きい側の膨張差が2.2×10−5(mm/℃)以下であることを特徴とする請求項1または2に記載の電子部品装置。
- 基板の厚みをat、基板のx方向に延びる辺の長さをa x 、基板のy方向に延びる辺の長さをa y 、及び基板のヤング率をEaとし、素子の厚みをbt、素子のx方向に延びる辺の長さをb x 、素子のy方向に延びる辺の長さをb y 、及び素子のヤング率をEbとし、前記素子と前記基板とのx方向における曲げ剛性比をRx、前記素子と前記基板とのy方向における曲げ剛性比をRyとし、R x =(at 3 ・a x ・Ea)/(bt 3 ・b x ・Eb)、R y =(at 3 ・a y ・Ea)/(bt 3 ・b y ・Eb)としたとき、前記曲げ剛性比Rx、Ryの内の大きい側の曲げ剛性比が1.2以下であることを特徴とする請求項1〜3のいずれか1項に記載の電子部品装置。
- 前記素子が、弾性表面波素子であることを特徴とする請求項1〜4のいずれか1項に記載の電子部品装置。
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PCT/JP2004/007175 WO2004109796A1 (ja) | 2003-06-03 | 2004-05-26 | 電子部品装置 |
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JP4624117B2 (ja) * | 2005-01-25 | 2011-02-02 | 京セラ株式会社 | 弾性表面波素子の実装構造、高周波モジュール並びに通信機器 |
US7439098B2 (en) * | 2005-09-09 | 2008-10-21 | Advanced Semiconductor Engineering, Inc. | Semiconductor package for encapsulating multiple dies and method of manufacturing the same |
JP5113446B2 (ja) * | 2006-08-11 | 2013-01-09 | 三洋電機株式会社 | 半導体素子およびその製造方法 |
JP2009278612A (ja) * | 2008-04-18 | 2009-11-26 | Nippon Dempa Kogyo Co Ltd | 表面実装用の水晶デバイス |
JP5176979B2 (ja) * | 2009-01-22 | 2013-04-03 | セイコーエプソン株式会社 | 弾性表面波装置およびその製造方法 |
JP5568416B2 (ja) * | 2010-08-31 | 2014-08-06 | 京セラクリスタルデバイス株式会社 | 電子デバイスの製造方法 |
JP5837845B2 (ja) * | 2012-02-23 | 2015-12-24 | 京セラ株式会社 | 電子部品の製造方法及び電子部品 |
JP6620686B2 (ja) * | 2016-06-27 | 2019-12-18 | 株式会社村田製作所 | 弾性波装置 |
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JPH04293310A (ja) | 1991-03-22 | 1992-10-16 | Murata Mfg Co Ltd | 弾性表面波装置 |
US5302880A (en) * | 1992-05-20 | 1994-04-12 | Murata Manufacturing Co., Ltd. | Piezoelectric tuning fork resonator and method of manufacturing the same |
JP3417608B2 (ja) | 1993-08-03 | 2003-06-16 | 日本特殊陶業株式会社 | 半導体パッケージ用のセラミック製リッド基板 |
JPH09266263A (ja) | 1996-03-27 | 1997-10-07 | Sumitomo Kinzoku Electro Device:Kk | 電子部品パッケージ封止用リッドとパッケージ |
JPH11291083A (ja) * | 1998-04-14 | 1999-10-26 | Murata Mfg Co Ltd | 半田合金 |
JP2002198761A (ja) | 2000-10-18 | 2002-07-12 | Murata Mfg Co Ltd | 弾性表面波装置の製造方法及び弾性表面波装置 |
JP2002170895A (ja) | 2000-11-30 | 2002-06-14 | Kyocera Corp | 電子部品収納用パッケージおよびその封止方法 |
JP3772740B2 (ja) * | 2001-12-21 | 2006-05-10 | 株式会社村田製作所 | 電子部品の製造方法 |
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