JP3282207B2 - Transmission type phase shift mask and method of manufacturing the same - Google Patents
Transmission type phase shift mask and method of manufacturing the sameInfo
- Publication number
- JP3282207B2 JP3282207B2 JP4266692A JP4266692A JP3282207B2 JP 3282207 B2 JP3282207 B2 JP 3282207B2 JP 4266692 A JP4266692 A JP 4266692A JP 4266692 A JP4266692 A JP 4266692A JP 3282207 B2 JP3282207 B2 JP 3282207B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- light
- film
- shifter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は透過型位相シフトマスク
の製造方法に関する。近年、半導体装置の微細化が進
み、ウェハ上に０．３〜０．５ｍのパターン形成技術が
要求されている。その手段として位相シフトマスク（レ
チクル）を用いて露光の際に解像力を向上させる方法が
用いられている。The present invention relates to a method for manufacturing a transmission type phase shift mask. In recent years, miniaturization of semiconductor devices has progressed, and a pattern forming technique of 0.3 to 0.5 m on a wafer has been required. As a means therefor, a method of using a phase shift mask (reticle) to improve the resolving power at the time of exposure is used.
【０００２】[0002]
【従来の技術】図３(A) 〜(D) は従来例による透過型位
相シフトマスクの製造工程の説明図である。2. Description of the Related Art FIGS. 3A to 3D are explanatory views of a process for manufacturing a transmission type phase shift mask according to a conventional example.
【０００３】図３(A) において，石英基板１上にシフタ
層２とレジスト膜４とを順に被着する。図３(B) におい
て，電子ビーム(EB)露光, 現像を行ってレジスト膜４を
パターニングする。In FIG. 3A, a shifter layer 2 and a resist film 4 are sequentially deposited on a quartz substrate 1. In FIG. 3B, the resist film 4 is patterned by performing electron beam (EB) exposure and development.
【０００４】図３(C) において，レジストパターンをマ
スクにして，シフタ層２をエッチングしてシフタを形成
する。図３(D) において，レジスト膜を剥離して，透過
型位相シフトマスクが完成する。周知のように，透過型
位相シフトマスクはシフタエッジにおいてマスクの透過
光の位相が反転するようにエッジ両側の厚さが調整され
ているため，シフタエッジが微小幅の黒パターンと等価
になることを利用している。In FIG. 3C, a shifter is formed by etching the shifter layer 2 using a resist pattern as a mask. In FIG. 3D, the resist film is stripped to complete the transmission type phase shift mask. As is well known, the transmission-type phase shift mask uses the fact that the thickness on both sides of the edge is adjusted so that the phase of the transmitted light of the mask is inverted at the shifter edge, so that the shifter edge becomes equivalent to a black pattern of minute width. are doing.
【０００５】[0005]
【発明が解決しようとする課題】従来例の方法で作製さ
れた透過型位相シフトマスクは，本来，遮光膜で形成し
なければならないパターン，例えばステッパの位置合わ
せマーク等の形成が不可能であった。従って，透過型位
相シフトマスクではウエハ上での位置合わせができない
ことから実用性に問題があった。The transmission type phase shift mask manufactured by the conventional method cannot originally form a pattern which must be formed by a light shielding film, for example, a positioning mark of a stepper. Was. Therefore, there is a problem in practicality because the position of the transmission phase shift mask cannot be aligned on the wafer.
【０００６】本発明は透過型位相シフトマスクにおい
て，通常の遮光膜パターンを形成できる方法の提供を目
的とする。An object of the present invention is to provide a method for forming a normal light-shielding film pattern in a transmission type phase shift mask.
【０００７】上記課題の解決は、透明基板１上に、エッ
ジ部が透過光の位相が反転するような厚さを有するシフ
タ層２からなるシフタパターンと該シフタ層２が形成さ
れない該透明基板面のパターンのみにより構成され、該
シフタ層２のエッジ部が所望の回路パターンとなるよう
に形成された回路パターン領域と、該透明基板上に形成
され、下層をシフタ層とし上層を遮光膜とする積層構造
からなる位置合わせパターンとを有し、該回路パターン
領域上には遮光膜が形成されない透過型位相シフトマス
クの製造方法であって、透明基板１上にシフタ層２と遮
光膜３と第１のレジスト膜４を順次被着する工程と、該
第１のレジスト膜４をパターニングして、該シフタ層２
からなるパターンおよび該位置合わせパターンを転写し
た該第１のレジスタ膜４からなる第１のレジストパター
ンを形成する工程と、該第１のレジストパターンをマス
クにして該遮光膜３及び該シフタ層２を順次エッチング
し、該第１のレジスト膜４を除去する工程と、該透明基
板１上全面に第２のレジスト膜５を被着する工程と、該
回路パターン領域上の該第２のレジスト膜５をすべて除
去して第２のレジストパターンを形成する工程と、該第
２のレジストパターンをマスクにしたエッチングにより
該回路パターン領域上に形成された該遮光膜３をすべて
除去し、該第２のレジスト膜５を除去する工程とを有す
ることを特徴とする透過型位相シフトマスクの製造方法
により達成される。To solve the above problem, a shifter pattern composed of a shifter layer 2 having a thickness such that an edge of the transmitted light is inverted on a transparent substrate 1 and a surface of the transparent substrate on which the shifter layer 2 is not formed are provided. And a circuit pattern region formed so that the edge of the shifter layer 2 has a desired circuit pattern, and a circuit pattern region formed on the transparent substrate, wherein the lower layer is a shifter layer and the upper layer is a light-shielding film. A method for manufacturing a transmission-type phase shift mask having an alignment pattern having a laminated structure, wherein a light-shielding film is not formed on the circuit pattern region, wherein a shifter layer 2, a light-shielding film 3, A step of sequentially applying the first resist film 4 and patterning the first resist film 4 to form the shifter layer 2.
Forming a first resist pattern made of the first register film 4 to which the pattern of the first resist film 4 has been transferred, and the light-shielding film 3 and the shifter layer 2 using the first resist pattern as a mask. Sequentially removing the first resist film 4, applying a second resist film 5 over the entire surface of the transparent substrate 1, and removing the second resist film 5 on the circuit pattern region. Forming a second resist pattern by removing all of the light-shielding film 3 and removing the light-shielding film 3 formed on the circuit pattern region by etching using the second resist pattern as a mask. And a step of removing the resist film 5 of the present invention.
【０００８】[0008]
【作用】本発明では，石英基板上にシフタ層で形成され
たパターンを有する領域と，シフタ層と遮光層の積層構
造からなるパターンを有する領域とがあり，その製造方
法としては，石英基板上にシフタ層と遮光膜の２層を形
成し，この２層の膜に従来例と同様にシフタパターンお
よび位置合わせパターンを形成し，シフタパターン上の
遮光膜を除去するようにしている。According to the present invention, there are a region having a pattern formed of a shifter layer on a quartz substrate and a region having a pattern having a laminated structure of a shifter layer and a light-shielding layer. A shifter pattern and an alignment pattern are formed on the two-layer film in the same manner as in the conventional example, and the light-shielding film on the shifter pattern is removed.
【０００９】この工程により，遮光部を必要とする領域
を選択的に設定することができるため，例えばマスク上
にステッパの位置合わせマーク等の形成が可能となる。In this step, since a region requiring a light-shielding portion can be selectively set, it is possible to form, for example, a stepper alignment mark on a mask.
【００１０】[0010]
【実施例】図１(A),(B) および図２(C) 〜(E) は本発明
の実施例の説明図である。図の左側は平面図，右側は断
面図である。1 (A) and 1 (B) and FIGS. 2 (C) to 2 (E) are explanatory views of an embodiment of the present invention. The left side of the figure is a plan view, and the right side is a sectional view.
【００１１】図１(A) において，石英基板１上にシフタ
層２と遮光膜３と第１のレジスト膜４を順に被着し，電
子ビーム露光, 現像を行って第１のレジスト膜４をパタ
ーニングし，このレジストパターンをマスクにしたエッ
チングにより遮光膜パターンを形成する。In FIG. 1A, a shifter layer 2, a light-shielding film 3, and a first resist film 4 are sequentially deposited on a quartz substrate 1, and the first resist film 4 is formed by performing electron beam exposure and development. Patterning is performed, and a light-shielding film pattern is formed by etching using the resist pattern as a mask.
【００１２】図１(B) において，第１のレジスト膜４か
らなるレジストパターンをマスクにして，シフタ層２を
エッチングする。次いで，第１のレジスト膜４からなる
レジストパターンを剥離する。In FIG. 1B, the shifter layer 2 is etched using the resist pattern composed of the first resist film 4 as a mask. Next, the resist pattern made of the first resist film 4 is stripped.
【００１３】図２(C) において，基板上全面に第２のレ
ジスト膜５を被着する。図２(D) において，第２のレジ
スト膜５をパターニングして遮光膜を除去する領域（主
にデバイス回路を形成する領域）の第２のレジスト膜５
を除去する。In FIG. 2C, a second resist film 5 is deposited on the entire surface of the substrate. In FIG. 2D, the second resist film 5 is formed in a region where the light-shielding film is removed by patterning the second resist film 5 (mainly a region where a device circuit is formed).
Is removed.
【００１４】図２(E) において，第２のレジスト膜５か
らなるレジストパターンをマスクにしたエッチングによ
り遮光膜を除去してシフタを形成する。次いで，残って
いる第２のレジスト膜５を剥離して，マスクを完成す
る。In FIG. 2E, the light-shielding film is removed by etching using a resist pattern composed of the second resist film 5 as a mask to form a shifter. Next, the remaining second resist film 5 is peeled off to complete the mask.
【００１５】ここで，シフタ層２は石英基板自身あるい
は蒸着，スパッタ等による二酸化シリコン(SiO2)薄膜，
スピンオングラス(SOG) 薄膜等を用いる。Here, the shifter layer 2 is a quartz substrate itself or a silicon dioxide (SiO 2 ) thin film formed by vapor deposition, sputtering, or the like.
Use a spin-on-glass (SOG) thin film or the like.
【００１６】[0016]
【発明の効果】本発明によれば，透過型位相シフトマス
クにおいて，位置合わせマーク等の遮光膜パターンをマ
スク上に形成することができ，透過型位相シフトマスク
の実用化に寄与することができた。According to the present invention, in a transmission type phase shift mask, a light shielding film pattern such as an alignment mark can be formed on the mask, which can contribute to the practical use of the transmission type phase shift mask. Was.
【図１】 本発明の実施例の説明図（１）FIG. 1 is an explanatory view of an embodiment of the present invention (1).
【図２】 本発明の実施例の説明図（２）FIG. 2 is an explanatory view (2) of an embodiment of the present invention.
【図３】 従来例の説明図FIG. 3 is an explanatory view of a conventional example.
【符号の説明】 １ 透明基板で石英基板 ２ シフタ層 ３ 遮光膜 ４ 第１のレジスト膜 ５ 第２のレジスト膜[Description of Signs] 1 Quartz substrate with transparent substrate 2 Shifter layer 3 Light shielding film 4 First resist film 5 Second resist film
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G03F 1/00 - 1/16 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) G03F 1/00-1/16
Claims (1)
反転するような厚さを有するシフタ層からなるシフタパ
ターンと該シフタ層が形成されない該透明基板面のパタ
ーンのみにより構成され、該シフタ層のエッジ部が所望
の回路パターンとなるように形成された回路パターン領
域と、 該透明基板上に形成され、下層をシフタ層とし上層を遮
光膜とする積層構造からなる位置合わせパターンとを有
し、 該回路パターン領域上には遮光膜が形成されない透過型
位相シフトマスクの製造方法であって、 透明基板上にシフタ層と遮光膜と第１のレジスト膜を順
次被着する工程と、 該第１のレジスト膜をパターニングして、該シフタ層か
らなるパターンおよび該位置合わせパターンを転写した
該第１のレジスタ膜からなる第１のレジストパターンを
形成する工程と、 該第１のレジストパターンをマスクにして該遮光膜及び
該シフタ層を順次エッチングし、該第１のレジスト膜を
除去する工程と、 該透明基板上全面に第２のレジスト膜を被着する工程
と、 該回路パターン領域上の該第２のレジスト膜をすべて除
去して第２のレジストパターンを形成する工程と、 該第２のレジストパターンをマスクにしたエッチングに
より該回路パターン領域上に形成された該遮光膜をすべ
て除去し、該第２のレジスト膜を除去する工程と、を有
することを特徴とする透過型位相シフトマスクの製造方
法。1. A shifter pattern comprising a shifter layer having a thickness such that the phase of transmitted light is inverted on a transparent substrate, and a pattern on the transparent substrate surface on which the shifter layer is not formed, wherein: A circuit pattern region formed such that an edge of the shifter layer has a desired circuit pattern; and an alignment pattern formed on the transparent substrate and having a laminated structure in which a lower layer is a shifter layer and an upper layer is a light-shielding film. A method for manufacturing a transmission-type phase shift mask in which a light-shielding film is not formed on the circuit pattern region, comprising: sequentially applying a shifter layer, a light-shielding film, and a first resist film on a transparent substrate; Patterning the first resist film to form a first resist pattern made of the first register film to which the pattern of the shifter layer and the alignment pattern have been transferred. Forming the first resist pattern as a mask, sequentially etching the light shielding film and the shifter layer to remove the first resist film, and forming a second resist film on the entire surface of the transparent substrate. Forming a second resist pattern by removing all of the second resist film on the circuit pattern region; and etching the circuit pattern by etching using the second resist pattern as a mask. Removing all the light-shielding film formed on the region, and removing the second resist film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4266692A JP3282207B2 (en) | 1992-02-28 | 1992-02-28 | Transmission type phase shift mask and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4266692A JP3282207B2 (en) | 1992-02-28 | 1992-02-28 | Transmission type phase shift mask and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05241320A JPH05241320A (en) | 1993-09-21 |
| JP3282207B2 true JP3282207B2 (en) | 2002-05-13 |
Family
ID=12642345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4266692A Expired - Lifetime JP3282207B2 (en) | 1992-02-28 | 1992-02-28 | Transmission type phase shift mask and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3282207B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4619043B2 (en) * | 2004-06-02 | 2011-01-26 | Ｈｏｙａ株式会社 | Phase shift mask manufacturing method and template manufacturing method |
| JP2011002859A (en) * | 2010-10-04 | 2011-01-06 | Hoya Corp | Method for producing phase shift mask, and method for producing template |
-
1992
- 1992-02-28 JP JP4266692A patent/JP3282207B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05241320A (en) | 1993-09-21 |
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