JPH04298745A - Production of phase shift mask - Google Patents
Production of phase shift maskInfo
- Publication number
- JPH04298745A JPH04298745A JP3064231A JP6423191A JPH04298745A JP H04298745 A JPH04298745 A JP H04298745A JP 3064231 A JP3064231 A JP 3064231A JP 6423191 A JP6423191 A JP 6423191A JP H04298745 A JPH04298745 A JP H04298745A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- light
- phase shift
- shift mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 4
- 239000011651 chromium Substances 0.000 description 16
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は位相シフトマスクの製造
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a phase shift mask.
【０００２】0002
【従来の技術】従来の位相シフトマスクの製造方法を図
面を用いて説明する。2. Description of the Related Art A conventional method for manufacturing a phase shift mask will be explained with reference to the drawings.
【０００３】まず図２（ａ）に示すように、ガラス基板
１上に遮光膜としてクロム（Ｃｒ）膜を形成したのちパ
ターニングし、第１Ｃｒパターン１３Ａを形成する。次
に図２（ｂ）に示すように、紫外光等に感度を有するポ
ジ型のフォトレジスト（以下ポジレジストと記す）膜１
４を塗布し、裏面より紫外光等を照射する。次に図２（
ｃ）に示すように、このポジレジスト膜を現像しレジス
トパターン１４Ａを形成する。次に図２（ｄ）に示すよ
うに、このレジストパターン１４Ａをマスクとして第１
Ｃｒパターン１３Ａをサイドエッチングし第２Ｃｒパタ
ーン１３Ｂを形成する。以上の工程によりレジストパタ
ーン１４Ａを補助パターンとしたシフタとして利用する
自己整合型の位相シフトマスクが形成される。First, as shown in FIG. 2A, a chromium (Cr) film is formed as a light shielding film on a glass substrate 1 and then patterned to form a first Cr pattern 13A. Next, as shown in FIG. 2(b), a positive photoresist (hereinafter referred to as positive resist) film 1 sensitive to ultraviolet light, etc.
4 and irradiate it with ultraviolet light etc. from the back side. Next, Figure 2 (
As shown in c), this positive resist film is developed to form a resist pattern 14A. Next, as shown in FIG. 2(d), the first resist pattern 14A is used as a mask.
The Cr pattern 13A is side-etched to form a second Cr pattern 13B. Through the above steps, a self-aligned phase shift mask is formed that uses the resist pattern 14A as an auxiliary pattern as a shifter.
【０００４】この方法は例えば、橋本等により第３７回
応用物理学関係連合講演会の講演予稿集２８ａ−ＰＤ−
２（１９９０年）に報告されている。[0004] This method is described, for example, by Hashimoto et al.
2 (1990).
【０００５】位相シフトマスクは、シフタのある部分を
透過する光の位相が、シフタのない部分を透過する光の
位相に対し、１８０°ずれるように、シフタの膜厚が制
御されて形成される。遮光パターンのエッジにおいては
上記の互いに１８０°位相がずれた光が干渉して弱めあ
うことにより、遮光パターンのエッジが強調されること
となる。このエッジ強調の効果により、縮小投影露光法
の解像度および焦点深度の向上が達成される。[0005] A phase shift mask is formed by controlling the thickness of the shifter so that the phase of light transmitted through a portion with a shifter is shifted by 180° from the phase of light transmitted through a portion without a shifter. . At the edge of the light-shielding pattern, the above-mentioned lights having a phase shift of 180 degrees interfere with each other and weaken each other, so that the edge of the light-shielding pattern is emphasized. This edge enhancement effect achieves an improvement in the resolution and depth of focus of the reduction projection exposure method.
【０００６】[0006]
【発明が解決しようとする課題】この従来の自己製造型
の位相シフトマスクでは、シフタ膜としてフォトレジス
ト膜を使用している為、物理的，化学的強度が弱く、洗
浄等を行なうことが難かしいと共に膜厚の制御が困難で
あるという問題点がある。更に遮光膜としてのクロム膜
のサイドエッチング量は典型的には１〜２μｍであるが
、このサイドエッチング量の制御が困難であるという問
題点もあった。[Problem to be solved by the invention] Since this conventional self-manufactured phase shift mask uses a photoresist film as a shifter film, it has weak physical and chemical strength and is difficult to clean. There are problems in that it is difficult to control the film thickness. Furthermore, although the side etching amount of the chromium film as a light shielding film is typically 1 to 2 μm, there is also a problem in that it is difficult to control this side etching amount.
【０００７】[0007]
【課題を解決するための手段】本発明の位相シフトマス
クの製造方法は、ガラス基板上に形成するクロム等の遮
光膜の下にあらかじめシフタ膜を膜づけしておき、裏面
からの紫外光等の照射，現像の後にまずシフタ膜を続い
て遮光膜をエッチングすることにより、シフタ膜による
補助パターンを形成するものである。[Means for Solving the Problems] The method for manufacturing a phase shift mask of the present invention involves forming a shifter film in advance under a light-shielding film made of chromium or the like formed on a glass substrate, and then blocking ultraviolet light from the back side. After irradiation and development, the shifter film is first etched, followed by the light shielding film, thereby forming an auxiliary pattern of the shifter film.
【０００８】[0008]
【実施例】次に本発明について図面を参照して説明する
。図１（ａ）〜（ｆ）は、本発明の一実施例を説明する
ためのマスクの断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings. FIGS. 1A to 1F are cross-sectional views of a mask for explaining one embodiment of the present invention.
【０００９】まず図１（ａ）に示すように、ガラス基板
１の上にシフタ膜としてＳｉＯ２ 膜２を形成する。次
で全面に遮光膜としてＣｒ膜を堆積したのちＥＢリソグ
ラフィー等の手段でＣｒ膜をパターニングし第１Ｃｒパ
ターン３Ａを形成する。次に図１（ｂ）に示すように、
紫外光等に感度を有するポジレジスト膜４を塗布法によ
り形成して、裏面より紫外光５等を照射する。First, as shown in FIG. 1(a), a SiO2 film 2 is formed on a glass substrate 1 as a shifter film. Next, a Cr film is deposited as a light shielding film over the entire surface, and then the Cr film is patterned by means such as EB lithography to form a first Cr pattern 3A. Next, as shown in Figure 1(b),
A positive resist film 4 sensitive to ultraviolet light or the like is formed by a coating method, and ultraviolet light 5 or the like is irradiated from the back side.
【００１０】次に図１（ｃ）に示すように、ポジレジス
ト膜４を現像してレジストパターン４Ａを形成する。次
に図１（ｄ）に示すように、このレジストパターン４Ａ
をマスクとしてＳｉＯ２ 膜２をエッチングしシフタ２
Ａを形成する。Next, as shown in FIG. 1(c), the positive resist film 4 is developed to form a resist pattern 4A. Next, as shown in FIG. 1(d), this resist pattern 4A is
The SiO2 film 2 is etched using the shifter 2 as a mask.
Form A.
【００１１】次に図１（ｅ）に示すように、レジストパ
ターン４Ａをマスクとして第１Ｃｒパターン３Ａをサイ
ドエッチングし第２Ｃｒパターン３Ｂを形成する。次に
図１（ｆ）に示すように、レジストパターン４Ａを剥離
することによりシフタ２Ａを補助パターンとした位相シ
フトマスクが完成させる。Next, as shown in FIG. 1E, the first Cr pattern 3A is side-etched using the resist pattern 4A as a mask to form a second Cr pattern 3B. Next, as shown in FIG. 1(f), the resist pattern 4A is peeled off to complete a phase shift mask using the shifter 2A as an auxiliary pattern.
【００１２】本実施例により形成された位相シフトマス
クは、物理的，化学的強度の強いＳｉＯ２ 膜をシフタ
として使用することができるため、洗浄等を行なうこと
が可能である。またＣＶＤ法やスパッタ法等による膜付
けができる為膜厚制御が容易である。さらにシフタとし
てのＳｉＯ２ 膜２のエッチング時によるレジストパタ
ーン４Ａの膜減りがある為、第１Ｃｒ膜３Ａのサイドエ
ッチング量が従来の方法に比べ約１／２以下ですむとい
う利点がある。[0012] The phase shift mask formed according to this embodiment can be cleaned, etc., since a SiO2 film having strong physical and chemical strength can be used as a shifter. Furthermore, since the film can be deposited by CVD, sputtering, etc., the film thickness can be easily controlled. Furthermore, since the resist pattern 4A is thinned during etching of the SiO2 film 2 as a shifter, there is an advantage that the amount of side etching of the first Cr film 3A can be reduced to about 1/2 or less compared to the conventional method.
【００１３】この実施例により製造した位相シフトマス
クにより、縮小投影露光法で０．３μｍ程度のパターン
を容易に形成することが可能となった。With the phase shift mask manufactured according to this example, it became possible to easily form a pattern of about 0.3 μm using the reduction projection exposure method.
【００１４】また、図１（ａ）の工程でＥＢリソグラフ
ィーを用いる場合、ガラス基板上に電子が蓄積してしま
う現象が発生し第１Ｃｒパターンの位置精度に重大な影
響（例えば位置誤差約１μｍ）を与える場合がある。こ
の場合はシフタ膜としてポリシリコン膜やＴｉＮ膜等の
導電性を有する物質を用いることにより、電子の蓄積を
防止することができる。Furthermore, when EB lithography is used in the process shown in FIG. 1(a), a phenomenon occurs in which electrons accumulate on the glass substrate, which has a serious effect on the positional accuracy of the first Cr pattern (for example, a positional error of approximately 1 μm). may be given. In this case, accumulation of electrons can be prevented by using a conductive material such as a polysilicon film or a TiN film as the shifter film.
【００１５】[0015]
【発明の効果】以上説明したように本発明は、クロム等
の第１の遮光パターンの下にあらかじめシフタ膜を膜づ
けしておき、裏面からの紫外光等の照射，現像により第
１の遮光パターン上にレジストパターンを設け、続いて
第１の遮光パターンをサイドエッチングすることにより
、物理的，化学的強度が強く、しかも成膜時の膜厚制御
性も良い無機膜からなるシフタを有する位相シフトマス
クが得られるという効果を有する。Effects of the Invention As explained above, in the present invention, a shifter film is formed in advance under the first light-shielding pattern made of chrome, etc., and the first light-shielding pattern is formed by irradiating with ultraviolet light or the like from the back side and developing it. By providing a resist pattern on the pattern and then side-etching the first light-shielding pattern, a phase structure having a shifter made of an inorganic film with strong physical and chemical strength and good film thickness controllability during film formation is created. This has the effect that a shift mask can be obtained.
【図１】本発明の一実施例を説明するためのマスクの断
面図。FIG. 1 is a sectional view of a mask for explaining one embodiment of the present invention.
【図２】従来の位相シフトマスクの製造方法を説明する
ためのマスクの断面図。FIG. 2 is a cross-sectional view of a mask for explaining a conventional method of manufacturing a phase shift mask.
１ ガラス基板
２ ＳｉＯ２ 膜
２Ａ シフタ
３Ａ，１３Ａ 第１のＣｒパターン３Ｂ，１３Ｂ
第２のＣｒパターン４，１４ ポジレジ
スト膜
４Ａ，１４Ａ レジストパターン５ 紫外
光1 Glass substrate 2 SiO2 film 2A Shifter 3A, 13A First Cr pattern 3B, 13B
Second Cr pattern 4, 14 Positive resist film 4A, 14A Resist pattern 5 Ultraviolet light
Claims (1)
遮光膜を順次形成する工程と、前記遮光膜をパターニン
グし第１遮光パターンを形成する工程と、前記第１遮光
パターンを含む全面にポジ型のフォトレジスト膜を形成
したのち前記ガラス基板の裏面より露光して現像し前記
第１遮光パターン上にレジストパターンを形成する工程
と、このレジストパターンをマスクとして前記シフタ膜
をエッチングしたのち同一レジストパターンを用いて前
記第１遮光パターンをサイドエッチングし第２遮光パタ
ーンを形成する工程とを含むことを特徴とする位相シフ
トマスクの製造方法。1. A step of sequentially forming a shifter film and a light shielding film on the surface of a glass substrate, a step of patterning the light shielding film to form a first light shielding pattern, and a step of forming a positive type film on the entire surface including the first light shielding pattern. After forming a photoresist film, exposing and developing it from the back side of the glass substrate to form a resist pattern on the first light-shielding pattern, etching the shifter film using this resist pattern as a mask, and then etching the same resist pattern. A method for manufacturing a phase shift mask, comprising the step of side-etching the first light-shielding pattern to form a second light-shielding pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3064231A JPH04298745A (en) | 1991-03-28 | 1991-03-28 | Production of phase shift mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3064231A JPH04298745A (en) | 1991-03-28 | 1991-03-28 | Production of phase shift mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04298745A true JPH04298745A (en) | 1992-10-22 |
Family
ID=13252142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3064231A Pending JPH04298745A (en) | 1991-03-28 | 1991-03-28 | Production of phase shift mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04298745A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07140633A (en) * | 1992-11-13 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | Formation method of rim-type phase-shift mask |
| DE4438616B4 (en) * | 1993-10-29 | 2004-02-05 | Hyundai Display Technology, Inc. | Halftone Phasenverschiebermaske |
-
1991
- 1991-03-28 JP JP3064231A patent/JPH04298745A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07140633A (en) * | 1992-11-13 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | Formation method of rim-type phase-shift mask |
| DE4438616B4 (en) * | 1993-10-29 | 2004-02-05 | Hyundai Display Technology, Inc. | Halftone Phasenverschiebermaske |
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