JPH05241320A - Production of phase shift mask - Google Patents
Production of phase shift maskInfo
- Publication number
- JPH05241320A JPH05241320A JP4266692A JP4266692A JPH05241320A JP H05241320 A JPH05241320 A JP H05241320A JP 4266692 A JP4266692 A JP 4266692A JP 4266692 A JP4266692 A JP 4266692A JP H05241320 A JPH05241320 A JP H05241320A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- resist film
- pattern
- film
- shifter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は透過型位相シフトマスク
の製造方法に関する。近年，半導体装置の微細化が進
み，ウエハ上に 0.3〜0.5 μｍのパターン形成技術が要
求されている。その手段として位相シフトマスク（レチ
クル）を用いて露光の際の解像力を向上させる方法が用
いられている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a transmission type phase shift mask. In recent years, the miniaturization of semiconductor devices has advanced, and a pattern forming technology of 0.3 to 0.5 μm on a wafer is required. As a method therefor, a method of using a phase shift mask (reticle) to improve the resolution at the time of exposure is used.
【０００２】[0002]
【従来の技術】図３(A) 〜(D) は従来例による透過型位
相シフトマスクの製造工程の説明図である。2. Description of the Related Art FIGS. 3A to 3D are explanatory views of a manufacturing process of a transmission type phase shift mask according to a conventional example.
【０００３】図３(A) において，石英基板１上にシフタ
層２とレジスト膜４とを順に被着する。図３(B) におい
て，電子ビーム(EB)露光, 現像を行ってレジスト膜４を
パターニングする。In FIG. 3A, a shifter layer 2 and a resist film 4 are sequentially deposited on a quartz substrate 1. In FIG. 3B, electron beam (EB) exposure and development are performed to pattern the resist film 4.
【０００４】図３(C) において，レジストパターンをマ
スクにして，シフタ層２をエッチングしてシフタを形成
する。図３(D) において，レジスト膜を剥離して，透過
型位相シフトマスクが完成する。周知のように，透過型
位相シフトマスクはシフタエッジにおいてマスクの透過
光の位相が反転するようにエッジ両側の厚さが調整され
ているため，シフタエッジが微小幅の黒パターンと等価
になることを利用している。In FIG. 3C, the shifter layer 2 is etched using the resist pattern as a mask to form a shifter. In FIG. 3 (D), the resist film is peeled off to complete the transmission type phase shift mask. As is well known, since the thickness of both sides of the transmission type phase shift mask is adjusted so that the phase of the transmitted light of the mask is inverted at the shifter edge, it is used that the shifter edge is equivalent to a black pattern with a minute width. is doing.
【０００５】[0005]
【発明が解決しようとする課題】従来例の方法で作製さ
れた透過型位相シフトマスクは，本来，遮光膜で形成し
なければならないパターン，例えばステッパの位置合わ
せマーク等の形成が不可能であった。従って，透過型位
相シフトマスクではウエハ上での位置合わせができない
ことから実用性に問題があった。In the transmission type phase shift mask manufactured by the method of the prior art, it is impossible to form a pattern that should originally be formed of a light shielding film, such as a stepper alignment mark. It was Therefore, the transmissive phase shift mask cannot be aligned on the wafer, which poses a practical problem.
【０００６】本発明は透過型位相シフトマスクにおい
て，通常の遮光膜パターンを形成できる方法の提供を目
的とする。An object of the present invention is to provide a method for forming a normal light-shielding film pattern in a transmission type phase shift mask.
【０００７】[0007]
【課題を解決するための手段】上記課題の解決は，透明
基板１上にシフタ層２と遮光膜３と第１のレジスト膜４
を順に被着し，該第１のレジスト膜４をパターニングし
て，シフタパターンおよび所望の遮光膜パターンを転写
した該第１のレジスト膜４からなるレジストパターンを
形成し，該第１のレジスト膜４からなるレジストパター
ンをマスクにして該遮光膜３をエッチングする工程と，
次いで，該第１のレジスト膜４からなるレジストパター
ンをマスクにして，シフタ層２をエッチングし，該第１
のレジスト膜４を除去する工程と，次いで，該透明基板
上全面に第２のレジスト膜５を被着し，シフタパターン
形成領域上の該第２のレジスト膜５を除去する工程と，
次いで，該第２のレジスト膜５からなるレジストパター
ンをマスクにしたエッチングにより遮光膜を除去してシ
フタを形成し，該第２のレジスト膜５を除去する工程と
を有する位相シフトマスクの製造方法により達成され
る。To solve the above-mentioned problems, a shifter layer 2, a light-shielding film 3, and a first resist film 4 are formed on a transparent substrate 1.
Are sequentially deposited, and the first resist film 4 is patterned to form a resist pattern composed of the first resist film 4 on which a shifter pattern and a desired light-shielding film pattern are transferred, and the first resist film 4 is formed. A step of etching the light-shielding film 3 using the resist pattern of 4 as a mask;
Next, the shifter layer 2 is etched using the resist pattern formed of the first resist film 4 as a mask,
And removing the second resist film 5 on the entire surface of the transparent substrate and removing the second resist film 5 on the shifter pattern forming region.
Next, a method of manufacturing a phase shift mask, which comprises a step of removing the light-shielding film by etching using a resist pattern made of the second resist film 5 as a mask to form a shifter, and removing the second resist film 5. Achieved by.
【０００８】[0008]
【作用】本発明では，石英基板上にシフタ層と遮光膜の
２層を形成し，この２層の膜に従来例と同様にシフタパ
ターンおよび位置合わせパターンを形成し，シフタパタ
ーン上の遮光膜を除去するようにしている。In the present invention, two layers of a shifter layer and a light-shielding film are formed on a quartz substrate, a shifter pattern and an alignment pattern are formed on the two-layer film as in the conventional example, and the light-shielding film on the shifter pattern is formed. To remove.
【０００９】この工程により，遮光部を必要とする領域
を選択的に設定することができるため，例えばマスク上
にステッパの位置合わせマーク等の形成が可能となる。By this step, the region requiring the light-shielding portion can be selectively set, so that it becomes possible to form, for example, the alignment mark of the stepper on the mask.
【００１０】[0010]
【実施例】図１(A),(B) および図２(C) 〜(E) は本発明
の実施例の説明図である。図の左側は平面図，右側は断
面図である。1 (A), 1 (B) and 2 (C)-(E) are explanatory views of an embodiment of the present invention. The left side of the figure is a plan view and the right side is a sectional view.
【００１１】図１(A) において，石英基板１上にシフタ
層２と遮光膜３と第１のレジスト膜４を順に被着し，電
子ビーム露光, 現像を行って第１のレジスト膜４をパタ
ーニングし，このレジストパターンをマスクにしたエッ
チングにより遮光膜パターンを形成する。In FIG. 1A, a shifter layer 2, a light-shielding film 3 and a first resist film 4 are sequentially deposited on a quartz substrate 1, and electron beam exposure and development are performed to form the first resist film 4. Patterning is performed, and a light-shielding film pattern is formed by etching using this resist pattern as a mask.
【００１２】図１(B) において，第１のレジスト膜４か
らなるレジストパターンをマスクにして，シフタ層２を
エッチングする。次いで，第１のレジスト膜４からなる
レジストパターンを剥離する。In FIG. 1B, the shifter layer 2 is etched using the resist pattern made of the first resist film 4 as a mask. Then, the resist pattern made of the first resist film 4 is peeled off.
【００１３】図２(C) において，基板上全面に第２のレ
ジスト膜５を被着する。図２(D) において，第２のレジ
スト膜５をパターニングして遮光膜を除去する領域（主
にデバイス回路を形成する領域）の第２のレジスト膜５
を除去する。In FIG. 2C, a second resist film 5 is deposited on the entire surface of the substrate. In FIG. 2D, the second resist film 5 in the region where the light shielding film is removed by patterning the second resist film 5 (the region where the device circuit is mainly formed) is formed.
To remove.
【００１４】図２(E) において，第２のレジスト膜５か
らなるレジストパターンをマスクにしたエッチングによ
り遮光膜を除去してシフタを形成する。次いで，残って
いる第２のレジスト膜５を剥離して，マスクを完成す
る。In FIG. 2 (E), the light shielding film is removed by etching using a resist pattern made of the second resist film 5 as a mask to form a shifter. Then, the remaining second resist film 5 is peeled off to complete the mask.
【００１５】ここで，シフタ層２は石英基板自身あるい
は蒸着，スパッタ等による二酸化シリコン(SiO2)薄膜，
スピンオングラス(SOG) 薄膜等を用いる。Here, the shifter layer 2 is a quartz substrate itself or a silicon dioxide (SiO 2 ) thin film formed by vapor deposition, sputtering, etc.
Spin-on-glass (SOG) thin film is used.
【００１６】[0016]
【発明の効果】本発明によれば，透過型位相シフトマス
クにおいて，位置合わせマーク等の遮光膜パターンをマ
スク上に形成することができ，透過型位相シフトマスク
の実用化に寄与することができた。According to the present invention, in a transmission type phase shift mask, a light shielding film pattern such as an alignment mark can be formed on the mask, which can contribute to the practical use of the transmission type phase shift mask. It was
【図面の簡単な説明】[Brief description of drawings]
【図１】 本発明の実施例の説明図（１）FIG. 1 is an explanatory diagram of an embodiment of the present invention (1)
【図２】 本発明の実施例の説明図（２）FIG. 2 is an explanatory diagram of an embodiment of the present invention (2)
【図３】 従来例の説明図FIG. 3 is an explanatory diagram of a conventional example.
１ 透明基板で石英基板 ２ シフタ層 ３ 遮光膜 ４ 第１のレジスト膜 ５ 第２のレジスト膜 1 a transparent substrate and a quartz substrate 2 a shifter layer 3 a light shielding film 4 a first resist film 5 a second resist film
Claims (1)
(3）と第１のレジスト膜(4）を順に被着し，該第１のレ
ジスト膜(4）をパターニングして，シフタパターンおよ
び所望の遮光膜パターンを転写した該第１のレジスト膜
(4）からなるレジストパターンを形成し，該第１のレジ
スト膜(4）からなるレジストパターンをマスクにして該
遮光膜(3）をエッチングする工程と，次いで，該第１の
レジスト膜(4）からなるレジストパターンをマスクにし
て，シフタ層(2) をエッチングし，該第１のレジスト膜
(4）を除去する工程と，次いで，該透明基板上全面に第
２のレジスト膜(5) を被着し，シフタパターン形成領域
上の該第２のレジスト膜(5) を除去する工程と，次い
で，該第２のレジスト膜(5) からなるレジストパターン
をマスクにしたエッチングにより遮光膜を除去してシフ
タを形成し，該第２のレジスト膜(5) を除去する工程と
を有することを特徴とする位相シフトマスクの製造方
法。1. A shifter layer (2) and a light-shielding film on a transparent substrate (1).
(3) and the first resist film (4) are deposited in this order, the first resist film (4) is patterned, and the shifter pattern and the desired light-shielding film pattern are transferred to the first resist film.
Forming a resist pattern composed of (4) and etching the light-shielding film (3) using the resist pattern composed of the first resist film (4) as a mask; ) Is used as a mask to etch the shifter layer (2) to form the first resist film.
A step of removing (4), and then a step of depositing a second resist film (5) on the entire surface of the transparent substrate and removing the second resist film (5) on the shifter pattern forming region. Then, a step of removing the second resist film (5) by forming a shifter by removing the light-shielding film by etching using a resist pattern made of the second resist film (5) as a mask, A method of manufacturing a phase shift mask, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4266692A JP3282207B2 (en) | 1992-02-28 | 1992-02-28 | Transmission type phase shift mask and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4266692A JP3282207B2 (en) | 1992-02-28 | 1992-02-28 | Transmission type phase shift mask and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05241320A true JPH05241320A (en) | 1993-09-21 |
| JP3282207B2 JP3282207B2 (en) | 2002-05-13 |
Family
ID=12642345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4266692A Expired - Lifetime JP3282207B2 (en) | 1992-02-28 | 1992-02-28 | Transmission type phase shift mask and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3282207B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005345737A (en) * | 2004-06-02 | 2005-12-15 | Hoya Corp | Mask blank, method for manufacturing phase shift mask, and method for manufacturing template |
| JP2011002859A (en) * | 2010-10-04 | 2011-01-06 | Hoya Corp | Method for producing phase shift mask, and method for producing template |
-
1992
- 1992-02-28 JP JP4266692A patent/JP3282207B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005345737A (en) * | 2004-06-02 | 2005-12-15 | Hoya Corp | Mask blank, method for manufacturing phase shift mask, and method for manufacturing template |
| JP4619043B2 (en) * | 2004-06-02 | 2011-01-26 | Ｈｏｙａ株式会社 | Phase shift mask manufacturing method and template manufacturing method |
| JP2011002859A (en) * | 2010-10-04 | 2011-01-06 | Hoya Corp | Method for producing phase shift mask, and method for producing template |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3282207B2 (en) | 2002-05-13 |
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