JP2979194B2 - Vacuum suction device - Google Patents
Vacuum suction deviceInfo
- Publication number
- JP2979194B2 JP2979194B2 JP14336490A JP14336490A JP2979194B2 JP 2979194 B2 JP2979194 B2 JP 2979194B2 JP 14336490 A JP14336490 A JP 14336490A JP 14336490 A JP14336490 A JP 14336490A JP 2979194 B2 JP2979194 B2 JP 2979194B2
- Authority
- JP
- Japan
- Prior art keywords
- suction
- porous
- vacuum suction
- suction device
- adsorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D59/00—Accessories specially designed for sawing machines or sawing devices
- B23D59/001—Measuring or control devices, e.g. for automatic control of work feed pressure on band saw blade
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Jigs For Machine Tools (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体ウエハやガラス基板などを吸着して
固定するための真空吸着装置に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum suction device for sucking and fixing a semiconductor wafer, a glass substrate, and the like.
従来より、例えば半導体装置の製造工程において、半
導体ウエハを吸着固定し、研磨や切断を行うために真空
吸着装置が用いられている。2. Description of the Related Art Conventionally, for example, in a manufacturing process of a semiconductor device, a vacuum suction device has been used for holding a semiconductor wafer by suction and performing polishing and cutting.
このような真空吸着装置としては、吸着面に開口した
複数の貫通孔を有するものがあったが、貫通孔部分のみ
で吸着するため、吸着が不均一となり、被吸着物にソリ
が生じやすいなどの問題点があった。そこで、より均一
な吸着を行うために、吸着面を多孔質体で形成した真空
吸着装置が用いられていた。As such a vacuum suction device, there is a device having a plurality of through-holes opened on the suction surface. However, since suction is performed only at the through-hole portion, the suction becomes non-uniform, and the object to be sucked is likely to warp. There was a problem. Therefore, in order to perform more uniform adsorption, a vacuum adsorption device having an adsorption surface formed of a porous material has been used.
例えば、第３図に示すように、基体13に多孔質板12を
固着して吸着面12aを形成し、吸引孔13aより真空吸引す
ることによって、上記吸着面12aに半導体ウエハＷを吸
着固定するようになっていた。For example, as shown in FIG. 3, the porous plate 12 is fixed to the base 13 to form the suction surface 12a, and the semiconductor wafer W is suction-fixed to the suction surface 12a by vacuum suction through the suction hole 13a. It was like.
また、上記多孔質板12として、金属焼結体からなるも
のは、バリ、カエリ、サビが発生しやすく耐摩耗性が小
さいことから寿命が短く、優れた平坦度を維持できな
い、などの欠点があった。そこで、上記多孔質板12とし
て、多孔質セラミックスを用いることが行われていた
（特開昭59−124536号、62−53774号、63−169243号公
報参照）。Further, the porous plate 12 made of a metal sintered body has shortcomings such as burrs, burrs, and rust, and has a short life due to low wear resistance, and cannot maintain excellent flatness. there were. Therefore, a porous ceramic has been used as the porous plate 12 (see JP-A-59-124536, JP-A-62-53774, and JP-A-63-169243).
〔従来技術の課題〕 ところが、このような多孔質板12として多孔質セラミ
ックスを用いた真空吸着装置11は、吸着面12aが絶縁性
のセラミックスからなり、導電性がないため加工中に半
導体ウエハＷに発生した静電気が逃げずにたまりやす
く、この静電気が発散する際に半導体ウエハＷ上の回路
を破壊してしまうという問題点があった。[Problems of the prior art] However, in such a vacuum suction device 11 using porous ceramics as the porous plate 12, the suction surface 12a is made of insulative ceramics and has no conductivity. The static electricity generated tends to accumulate without escaping, and the circuit on the semiconductor wafer W is destroyed when the static electricity is dissipated.
また、上記真空吸着装置11上に半導体ウエハＷを載置
して切断を行う際に、カッターが切断完了して吸着面12
aに接触することを検知できず、吸着面12aを切り込んで
しまうという不都合があった。Further, when the semiconductor wafer W is mounted on the vacuum suction device 11 and cut, the cutter is completely cut and the suction surface 12 is cut.
There is a disadvantage that the contact with the a cannot be detected and the suction surface 12a is cut.
そこで、本発明は上記課題に鑑み、真空吸着装置の吸
着面を含む部位を多孔質セラミックスにより形成し、該
多孔質セラミックスの表面に導電膜を付着させて導電性
を付与したものである。In view of the above-mentioned problems, the present invention is to provide a portion including the suction surface of a vacuum suction device made of porous ceramics, and to impart conductivity by attaching a conductive film to the surface of the porous ceramics.
本発明によれば、吸着面を含む部位が導電性を有する
ことから、半導体ウエハに発生した静電気を逃がすこと
ができる。According to the present invention, since the portion including the suction surface has conductivity, static electricity generated on the semiconductor wafer can be released.
また、吸着固定した半導体ウエハを切断する際に、カ
ッターと吸着面との電気的導通を検知することによっ
て、切断完了に伴うカッターと吸着面の接触を容易に検
出することができる。Further, when cutting the semiconductor wafer that has been suction-fixed, by detecting the electrical continuity between the cutter and the suction surface, it is possible to easily detect the contact between the cutter and the suction surface upon completion of the cutting.
さらに、吸着面を含む部位がセラミックスからなるた
め、優れた平坦性、耐摩耗性、耐蝕性を有している。Further, since the portion including the adsorption surface is made of ceramics, it has excellent flatness, wear resistance, and corrosion resistance.
以下、本発明の実施例を図をもって説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図、第２図に示す真空吸着装置１は、基体３に多
孔質板２を固着して吸着面2aを形成し、吸引孔3aより真
空吸引することによって、上記吸着面2aに半導体ウエハ
Ｗなどの被吸着物を吸着固定するようになっている。The vacuum suction device 1 shown in FIGS. 1 and 2 forms a suction surface 2a by fixing a porous plate 2 to a base 3 and suctions the semiconductor wafer on the suction surface 2a by vacuum suction through a suction hole 3a. An object to be adsorbed such as W is adsorbed and fixed.
また、上記多孔質板２は、表面に金属メッキなどを施
して導電膜とした多孔質セラミックスからなっている。
その為、吸着面2aは導電性を有し、第１図に示すよう
に、上記多孔質板２をアース４に接続しておけば、半導
体ウエハＷに発生する静電気を逃がすことができる。ま
た、第２図に示すように真空吸着装置１上に吸着した半
導体ウエハＷを切断する際に、カッター６と多孔質板２
との電気的導通を検知器５で検出するようにしておけ
ば、切断完了して、カッター６が吸着面2aに接触したこ
とを容易に検知でき、吸着面2aへのカッター６の切り込
みを防止できる。The porous plate 2 is made of porous ceramics whose surface is subjected to metal plating or the like to form a conductive film.
Therefore, the adsorption surface 2a has conductivity, and if the porous plate 2 is connected to the ground 4, as shown in FIG. 1, static electricity generated on the semiconductor wafer W can be released. Further, as shown in FIG. 2, when cutting the semiconductor wafer W sucked on the vacuum suction device 1, the cutter 6 and the porous plate 2 are cut.
If the electrical continuity with the detector 5 is detected by the detector 5, it is possible to easily detect that the cutter 6 is in contact with the suction surface 2a after the cutting is completed and to prevent the cutter 6 from being cut into the suction surface 2a. it can.
なお、上記基体３は、金属又は緻密質セラミックスか
らなり、この基体３と多孔質板２はガラス、接着剤など
によって固着してある。The base 3 is made of metal or dense ceramics, and the base 3 and the porous plate 2 are fixed by glass, an adhesive, or the like.
次に、上記多孔質板２として、表面に金属メッキを施
して導電膜とした多孔質セラミックスからなるものにつ
いて説明する。Next, a description will be given of a porous plate 2 made of porous ceramics whose surface is subjected to metal plating to form a conductive film.
まず、アルミナ、ジルコニア等のセラミック原料に所
定の焼結助剤などを添加し、バインダーや焼結条件を調
整したり、あるいは焼成時に焼失する物質を混入してお
くことによって、気孔率30〜40％、平均細孔径５〜500
μｍ程度の多孔質セラミックス板を製造する。この多孔
質セラミックス板の全表面に無電解メッキを施して、N
i、Cuなどの金属メッキ層を形成するが、該金属メッキ
層は多孔質セラミックス板の全ての開気孔中にも形成さ
れる。また、上記Ni、Cuなどの金属メッキ層は体積固有
抵抗値が10-5〜10-6Ω・cmと極めて低く、従ってこの多
孔質セラミックス板の表面は優れた導電性をもつことに
なる。First, a predetermined sintering aid or the like is added to a ceramic material such as alumina or zirconia, and a binder or a sintering condition is adjusted, or a porosity of 30 to 40 is obtained by mixing a substance which burns off during firing. %, Average pore size 5 to 500
A porous ceramic plate of about μm is manufactured. Electroless plating is applied to the entire surface of this porous ceramic
A metal plating layer of i, Cu or the like is formed, and the metal plating layer is also formed in all open pores of the porous ceramic plate. Further, the above-mentioned metal plating layer of Ni, Cu or the like has an extremely low volume resistivity value of 10 −5 to 10 −6 Ω · cm, so that the surface of the porous ceramic plate has excellent conductivity.
この後、上記多孔質セラミックス板の上面を研摩し
て、平坦度の優れた吸着面2aを形成する。この時、吸着
面2aにはセラミックスが露出するため、被吸着物をセラ
ミックス部分で支持することから、優れた平坦性、耐摩
耗性を有する。Thereafter, the upper surface of the porous ceramic plate is polished to form the adsorption surface 2a having excellent flatness. At this time, since the ceramic is exposed on the adsorption surface 2a, the object to be adsorbed is supported by the ceramic portion, so that it has excellent flatness and wear resistance.
また、吸着面2aの開気孔部分では金属メッキ層が露出
することから、この金属メッキ層によって、吸着面2aは
導電性を有することになる。In addition, since the metal plating layer is exposed in the open pore portion of the adsorption surface 2a, the adsorption surface 2a has conductivity by this metal plating layer.
なお、上記金属メッキ層となる金属の種類はNi、Cuな
どを用いるが、耐蝕性、密着強度などの点からNiが最も
優れていた。また、金属メッキ層の厚みは、0.5μｍ以
上であれば吸着面2aに導電性を持たせることができる。
ただし、金属メッキ層の厚みが大きいと、多孔質板２の
細孔径を小さくしてしまうため、厚みは１μｍ程度のも
のが最も優れていた。The metal used as the metal plating layer was Ni, Cu, or the like. Ni was the most excellent in terms of corrosion resistance and adhesion strength. If the thickness of the metal plating layer is 0.5 μm or more, the adsorption surface 2a can have conductivity.
However, when the thickness of the metal plating layer is large, the pore diameter of the porous plate 2 is reduced, so that the thickness of about 1 μm is most excellent.
また、上記実施例では導電膜として金属メッキを施し
たもののみを示したが、この他に、CVD法などによりTi
C、TiNなどの導電性薄膜を形成したものでもよい。Further, in the above-described embodiment, only the conductive film plated with metal is shown.
A conductive thin film such as C or TiN may be formed.
さらに、上記多孔質セラミックス板の気孔率が30％よ
り低いと吸着力が弱くなり、逆に気孔率が40％より高い
と、吸着面の平坦性が悪くなってしまうため、真空吸着
装置として用いるためには、気孔率30〜40％のものが優
れていた。Further, if the porosity of the porous ceramics plate is lower than 30%, the adsorbing power is weakened. Conversely, if the porosity is higher than 40%, the flatness of the adsorbing surface deteriorates. For this reason, those having a porosity of 30 to 40% were excellent.
そこで、第１表に示すさまざまな多孔質セラミックス
を用いて多孔質板２を形成した。いずれも多孔質板２の
大きさは、直径150mm、厚さ10mmとし、吸着面の中央部
と端面間の電気抵抗値を測定した。Then, the porous plate 2 was formed using various porous ceramics shown in Table 1. In each case, the size of the porous plate 2 was 150 mm in diameter and 10 mm in thickness, and the electric resistance value between the central portion and the end surface of the adsorption surface was measured.
この結果、第１表に示すように本発明実施例のもの
は、いずれも電気抵抗値が低く、優れた導電性を有して
いることが判る。As a result, as shown in Table 1, it can be seen that all of the examples of the present invention have low electric resistance and excellent conductivity.
〔発明の効果〕 以上のように、本発明によれば、真空吸着装置の吸着
面を含む部位を多孔質セラミックスにより形成し、該多
孔質セラミックスの表面に導電膜を付着させて導電性を
付与したことによって、吸着面が導電性を有するため、
被吸着物の静電気を逃がすことができ、また、吸着面上
で切断を行う際にカッターと吸着面の接触を容易に検出
できることから、カッターによる吸着面への切り込みを
防止できる。さらに、吸着面がセラミックスからなるた
め、耐蝕性、耐摩耗性、平坦性に優れているなど、さま
ざまな特長をもった真空吸着装置を提供できる。 [Effects of the Invention] As described above, according to the present invention, a portion including a suction surface of a vacuum suction device is formed of porous ceramics, and a conductive film is attached to the surface of the porous ceramics to impart conductivity. By doing, because the adsorption surface has conductivity,
The static electricity of the object can be released, and the contact between the cutter and the suction surface can be easily detected when cutting is performed on the suction surface, so that the cutter can be prevented from cutting into the suction surface. Further, since the suction surface is made of ceramics, a vacuum suction device having various features such as excellent corrosion resistance, wear resistance, and flatness can be provided.
第１図、第２図はそれぞれ本発明実施例に係る真空吸着
装置を示す断面図である。 第３図は従来の真空吸着装置を示す断面図である。 1:真空吸着装置 2:多孔質板、2a:吸着面 3:基体、3a:吸引孔1 and 2 are sectional views showing a vacuum suction device according to an embodiment of the present invention. FIG. 3 is a sectional view showing a conventional vacuum suction device. 1: Vacuum adsorption device 2: Porous plate, 2a: Adsorption surface 3: Substrate, 3a: Suction hole
Claims (1)
りなり、該多孔質セラミックスの表面に導電膜を付着さ
せて導電性を付与してなる真空吸着装置。1. A vacuum suction device wherein a portion including an adsorption surface is made of porous ceramics, and a conductive film is attached to the surface of the porous ceramics to impart conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14336490A JP2979194B2 (en) | 1990-05-31 | 1990-05-31 | Vacuum suction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14336490A JP2979194B2 (en) | 1990-05-31 | 1990-05-31 | Vacuum suction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0435827A JPH0435827A (en) | 1992-02-06 |
| JP2979194B2 true JP2979194B2 (en) | 1999-11-15 |
Family
ID=15337070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14336490A Expired - Lifetime JP2979194B2 (en) | 1990-05-31 | 1990-05-31 | Vacuum suction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2979194B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006086389A (en) * | 2004-09-17 | 2006-03-30 | Taiheiyo Cement Corp | Jig for vacuum suction |
| JP2014090105A (en) * | 2012-10-31 | 2014-05-15 | Disco Abrasive Syst Ltd | Processing device |
| JP2015018974A (en) * | 2013-07-11 | 2015-01-29 | 東京応化工業株式会社 | Support body separation unit |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0521584A (en) * | 1991-07-16 | 1993-01-29 | Nikon Corp | Retaining equipment |
| JP3073640B2 (en) * | 1993-11-17 | 2000-08-07 | シーケーディ株式会社 | Vacuum chuck suction plate |
| US6089801A (en) * | 1998-07-01 | 2000-07-18 | Thermwood Corporation | Machine tool with improved workpiece holddown system |
| JP2003086667A (en) * | 2001-09-12 | 2003-03-20 | Takatori Corp | Cassette for thin wafer and suction band |
| ES2251626T3 (en) * | 2001-12-03 | 2006-05-01 | E.I. Du Pont De Nemours And Company | MEMBER OF TRANSFER OF OBLEAS WITH ELECTRICAL CONDUCTIVITY AND METHOD FOR MANUFACTURING. |
| JP2004306191A (en) | 2003-04-07 | 2004-11-04 | Seiko Epson Corp | Table device, film deposition device, optical element, semiconductor device and electronic equipment |
| JP2008198709A (en) * | 2007-02-09 | 2008-08-28 | Disco Abrasive Syst Ltd | Cleaning device and holding table |
| JP5145857B2 (en) * | 2007-10-18 | 2013-02-20 | 株式会社デンソー | Wafer manufacturing method |
| JP2011014783A (en) * | 2009-07-03 | 2011-01-20 | Disco Abrasive Syst Ltd | Chuck table for cutting device |
| JP5888051B2 (en) | 2012-03-27 | 2016-03-16 | 三菱電機株式会社 | Wafer suction method, wafer suction stage, wafer suction system |
| CN105382079B (en) * | 2015-12-10 | 2017-04-12 | 成都柔电云科科技有限公司 | Belt metal layer film punching device and method thereof |
| JP2018029152A (en) * | 2016-08-19 | 2018-02-22 | 株式会社ディスコ | Holding table |
-
1990
- 1990-05-31 JP JP14336490A patent/JP2979194B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006086389A (en) * | 2004-09-17 | 2006-03-30 | Taiheiyo Cement Corp | Jig for vacuum suction |
| JP4545536B2 (en) * | 2004-09-17 | 2010-09-15 | 太平洋セメント株式会社 | Vacuum suction jig |
| JP2014090105A (en) * | 2012-10-31 | 2014-05-15 | Disco Abrasive Syst Ltd | Processing device |
| JP2015018974A (en) * | 2013-07-11 | 2015-01-29 | 東京応化工業株式会社 | Support body separation unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0435827A (en) | 1992-02-06 |
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