JP2750248B2 - Package for storing semiconductor elements - Google Patents
Package for storing semiconductor elementsInfo
- Publication number
- JP2750248B2 JP2750248B2 JP4268471A JP26847192A JP2750248B2 JP 2750248 B2 JP2750248 B2 JP 2750248B2 JP 4268471 A JP4268471 A JP 4268471A JP 26847192 A JP26847192 A JP 26847192A JP 2750248 B2 JP2750248 B2 JP 2750248B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metallized
- semiconductor element
- brazing material
- insulating base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Ceramic Products (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体素子を収容するた
めの半導体素子収納用パッケージの改良に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.
【０００２】[0002]
【従来の技術】従来、半導体素子を収容するための半導
体素子収納用パッケージは、通常、酸化アルミニウム質
焼結体等の電気絶縁材料から成り、その上面の略中央部
に半導体素子を収容するための凹部及び該凹部周辺から
外周縁にかけて導出されたタングステン、モリブデン、
マンガン等の高融点金属粉末から成るメタライズ配線層
を有する絶縁基体と、半導体素子を外部電気回路に電気
的に接続するために前記メタライズ配線層に銀ロウ等の
ロウ材を介してロウ付けされた外部リード端子と、コバ
ール金属や４２アロイ等の金属から成る蓋体とから構成
されており、絶縁基体の凹部底面に半導体素子を取着固
定するとともに該半導体素子の各電極とメタライズ配線
層とをボンディングワイヤを介して電気的に接続し、し
かる後、絶縁基体上面に金属製蓋体を溶接し、絶縁基体
と金属製蓋体とから成る容器内部に半導体素子を気密に
封止することによって最終製品としての半導体装置とな
る。2. Description of the Related Art Conventionally, a package for accommodating a semiconductor element for accommodating a semiconductor element is usually made of an electrically insulating material such as a sintered body of aluminum oxide. Tungsten, molybdenum derived from the concave portion and the periphery of the concave portion to the outer peripheral edge,
An insulating base having a metallized wiring layer made of a high melting point metal powder such as manganese, and a metallized wiring layer were brazed to the metallized wiring layer via a brazing material such as silver brazing in order to electrically connect the semiconductor element to an external electric circuit. It is composed of an external lead terminal and a lid made of metal such as Kovar metal or 42 alloy. A semiconductor element is attached and fixed to the bottom of the concave portion of the insulating base, and each electrode of the semiconductor element and the metallized wiring layer are connected. Electrical connection is made via bonding wires, and thereafter, a metal lid is welded to the upper surface of the insulating base, and the semiconductor element is hermetically sealed inside a container formed of the insulating base and the metal lid. It becomes a semiconductor device as a product.
【０００３】尚、前記従来の半導体素子収納用パッケー
ジは通常、絶縁基体の上面にコバール金属や４２アロイ
等の金属から成る金属枠体を予め銀ロウ等のロウ材を介
しロウ付けしておくとともに該金属枠体に金属製蓋体を
シームウエルド法等により溶接させることによって金属
製蓋体は絶縁基体の上面に取着され、これによって絶縁
基体と金属製蓋体とから成る容器が気密に封止される。In the conventional package for housing a semiconductor element, a metal frame made of a metal such as Kovar metal or 42 alloy is usually brazed on the upper surface of an insulating base via a brazing material such as silver brazing. The metal lid is attached to the upper surface of the insulating base by welding the metal lid to the metal frame by a seam welding method or the like, whereby the container including the insulating base and the metal lid is hermetically sealed. Is stopped.
【０００４】また前記絶縁基体への金属枠体のロウ付け
は、まず絶縁基体の上面に金属枠体より若干大きめの面
積にタングステン、モリブデン、マンガン等の高融点金
属粉末から成るメタライズ金属層を従来周知のスクリー
ン印刷法等の厚膜手法を採用することによって被着形成
し、次に前記メタライズ金属層上に銀ロウ等のロウ材と
金属枠体とを順次載置させ、最後に前記ロウ材に約８０
０℃の温度を印加し、ロウ材を加熱溶融させることによ
って行われる。[0004] In addition, the metal frame is brazed to the insulating base by first forming a metallized metal layer made of a refractory metal powder such as tungsten, molybdenum or manganese on the upper surface of the insulating base in a slightly larger area than the metal frame. It is formed by applying a known thick film technique such as screen printing, and then a brazing material such as silver brazing and a metal frame are sequentially placed on the metallized metal layer, and finally the brazing material is formed. About 80
This is performed by applying a temperature of 0 ° C. and heating and melting the brazing material.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、この従
来の半導体素子収納用パッケージにおいては、絶縁基体
に被着させたメタライズ金属層に金属枠体を銀ロウ（銀
70乃至90重量％ー銅10乃至30重量％合金）から成るロウ
材を介してロウ付けしており、該銀ロウを構成する銅は
極めて酸化し易い金属であることから絶縁基体に被着さ
せたメタライズ金属層に金属枠体をロウ付けした後、大
気中に含まれる水分が接触すると銅の酸化物( 錆) を形
成し、外観不良となる変色が発生してしまう。However, in this conventional package for housing a semiconductor element, a metal frame is formed on a metallized metal layer adhered to an insulating substrate by a silver brazing (silver).
70 to 90% by weight—a copper 10 to 30% by weight alloy), and the copper constituting the silver braze is an extremely oxidizable metal. After the metal frame is brazed to the metallized metal layer, when moisture contained in the air comes into contact, copper oxide (rust) is formed and discoloration that causes poor appearance occurs.
【０００６】また前記銅の錆は極めて脆いため絶縁基体
に設けたメタライズ金属層と金属枠体とのロウ付け強度
が大きく劣化し、金属枠体に外力が印加されると該外力
によって金属枠体がメタライズ金属層より容易に外れ、
容器の気密封止が破れて内部に収容する半導体素子を長
期間にわたり正常、且つ安定に作動させることができな
いという欠点を有していた。Further, since the rust of copper is extremely brittle, the brazing strength between the metallized metal layer provided on the insulating base and the metal frame is greatly deteriorated, and when an external force is applied to the metal frame, the external force causes the metal frame to be damaged. Comes off more easily than the metallized metal layer,
There is a disadvantage that the hermetic sealing of the container is broken and the semiconductor element housed therein cannot be operated normally and stably for a long period of time.
【０００７】[0007]
【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は絶縁基体に被着させたメタライズ金属層
に金属枠体を強固にロウ付けし、容器の気密封止を完全
として内部に収容する半導体素子を長期間にわたり正
常、且つ安定に作動させることができる半導体素子収納
用パッケージを提供することにある。SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to firmly braze a metal frame to a metallized metal layer adhered to an insulating substrate to completely hermetically seal a container. SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor element housing package that allows a semiconductor element housed therein to operate normally and stably for a long period of time.
【０００８】[0008]
【課題を解決するための手段】本発明は絶縁基体の表面
に設けたメタライズ金属層に金属枠体をロウ材を介しロ
ウ付けするとともに該金属枠体に金属製蓋体を取着し、
内部に半導体素子を気密に収容するようになした半導体
素子収納用パッケージであって、前記ロウ材が銀に金を
５乃至２５重量％含有させた金ー銀合金から成ることを
特徴とするものである。According to the present invention, a metal frame is brazed to a metallized metal layer provided on the surface of an insulating substrate via a brazing material, and a metal lid is attached to the metal frame.
A semiconductor element housing package for hermetically housing a semiconductor element therein, wherein the brazing material is made of a gold-silver alloy containing 5 to 25% by weight of gold in silver. It is.
【０００９】[0009]
【作用】本発明の半導体素子収納用パッケージによれ
ば、絶縁基体に被着させたメタライズ金属層に金属枠体
をロウ付けするロウ材として化学的に安定で、脆い酸化
物（錆）を発生することのない金を５乃至２５重量％含
有させた金ー銀合金を使用したことから金属枠体を絶縁
基体のメタライズ金属層に強固にロウ付けすることが可
能となり、容器の気密封止を完全として内部に収容する
半導体素子を長期間にわたり正常、且つ安定に作動させ
ることができる。According to the semiconductor device housing package of the present invention, a chemically stable and brittle oxide (rust) is generated as a brazing material for brazing a metal frame to a metallized metal layer adhered to an insulating substrate. Since the use of a gold-silver alloy containing 5 to 25% by weight of gold which does not perform the above-mentioned process, the metal frame can be firmly brazed to the metallized metal layer of the insulating base, and the hermetic sealing of the container can be achieved. The semiconductor element housed completely therein can be normally and stably operated for a long period of time.
【００１０】[0010]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1 及び図2 は本発明の半導体素子収納用パッケー
ジの一実施例を示し、図中、1 は絶縁基体、2 は蓋体で
ある。この絶縁基体1 と蓋体2 とで半導体素子3 を収容
する容器が構成される。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base, and 2 is a lid. The insulating base 1 and the lid 2 constitute a container for housing the semiconductor element 3.
【００１１】前記絶縁基体1 は酸化アルミニウム質焼結
体、ムライト質焼結体、窒化アルミニウム質焼結体、炭
化珪素質焼結体、ガラスセラミックス焼結体等の電気絶
縁材料から成り、その上面中央部に半導体素子3 を収容
するための空所を形成する凹部1aが設けてあり、該凹部
1a底面には半導体素子3 がロウ材、ガラス、樹脂等の接
着剤を介して取着される。The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a glass ceramic sintered body, etc. A recess 1a is formed at the center to form a space for accommodating the semiconductor element 3, and the recess 1a is provided.
A semiconductor element 3 is attached to the bottom surface of 1a via an adhesive such as brazing material, glass, resin, or the like.
【００１２】前記絶縁基体1 は例えば、酸化アルミニウ
ム質焼結体から成る場合、アルミナ(Al 2 O 3 ) 、シリ
カ(SiO2 ) 、カルシア(CaO) 、マグネシア(MgO) 等の原
料粉末に適当な有機溶剤、溶媒を添加混合して泥漿状と
なすとともにこれを従来周知のドクターブレード法やカ
レンダーロール法を採用することによってセラミックグ
リーンシート( 生シート) を形成し、しかる後、前記セ
ラミックグリーンシートに適当な打ち抜き加工を施すと
ともに複数枚積層し、高温( 約1600℃) で焼成すること
によって製作される。When the insulating base 1 is made of, for example, an aluminum oxide sintered body, it is suitable for a raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO) or the like. An organic solvent and a solvent are added and mixed to form a slurry, and a ceramic green sheet (raw sheet) is formed by employing a conventionally known doctor blade method or calender roll method. It is manufactured by performing appropriate punching, stacking multiple sheets, and firing at a high temperature (about 1600 ° C).
【００１３】また前記絶縁基体1 には凹部1a周辺から外
周縁にかけて複数個のメタライズ配線層4 が被着形成さ
れており、該メタライズ配線層4 の凹部1a周辺部には半
導体素子3 の電極がボンディングワイヤ5 を介して電気
的に接続され、また絶縁基体1 の外周縁に導出する部位
には外部リード端子6 がロウ材を介してロウ付けされ
る。A plurality of metallized wiring layers 4 are formed on the insulating substrate 1 from the periphery of the concave portion 1a to the outer peripheral edge. Electrodes of the semiconductor element 3 are formed around the concave portion 1a of the metallized wiring layer 4. An external lead terminal 6 is electrically connected via a bonding wire 5 to a portion led out to the outer peripheral edge of the insulating base 1 via a brazing material.
【００１４】前記絶縁基体1 に設けたメタライズ配線層
4 はタングステン、モリブデン、マンガン等の金属粉末
から成り、該メタライズ配線層4 は外部電気回路に接続
される外部リード端子6 に半導体素子3 の各電極を電気
的に導通させる作用を為す。A metallized wiring layer provided on the insulating substrate 1
Reference numeral 4 denotes a metal powder of tungsten, molybdenum, manganese, or the like, and the metallized wiring layer 4 functions to electrically connect each electrode of the semiconductor element 3 to an external lead terminal 6 connected to an external electric circuit.
【００１５】前記メタライズ配線層4 は例えば、タング
ステン等の金属粉末に有機溶剤、溶媒を添加混合して得
た金属ペーストを絶縁基体1 となるセラミックグリーン
シートに予め従来周知のスクリーン印刷法により所定パ
ターンに印刷塗布しておくことによって絶縁基体1 の所
定位置に被着形成される。The metallized wiring layer 4 is formed, for example, by applying a metal paste obtained by adding and mixing an organic solvent and a solvent to a metal powder such as tungsten on a ceramic green sheet serving as the insulating substrate 1 in a predetermined pattern by a conventionally known screen printing method. Is formed on a predetermined position of the insulating substrate 1 by printing.
【００１６】尚、前記メタライズ配線層4 はその露出す
る外表面にニッケル、金等の耐蝕性に優れ、且つロウ材
と濡れ性の良い金属をメッキ法により1.0 乃至20.0μm
の厚みに層着させておくとメタライズ配線層4 の酸化腐
食を有効に防止することができるとともにメタライズ配
線層4 とボンディングワイヤ5 及び外部リード端子6と
のロウ付け接合を強固なものとなすことができる。従っ
て、前記メタライズ配線層4 の表面にはニッケル、金等
の耐蝕性に優れ、且つロウ材と濡れ性の良い金属をメッ
キ法により1.0 乃至20.0μm の厚みに層着させておくこ
とが好ましい。The metallized wiring layer 4 is coated on its exposed outer surface with a metal having excellent corrosion resistance, such as nickel and gold, and a good wettability with a brazing material by a plating method of 1.0 to 20.0 μm.
The metallized wiring layer 4 can be effectively prevented from being oxidized and corroded, and the brazed joint between the metallized wiring layer 4 and the bonding wires 5 and the external lead terminals 6 must be firm. Can be. Therefore, it is preferable that a metal having excellent corrosion resistance, such as nickel or gold, and a good wettability with a brazing material is applied to the surface of the metallized wiring layer 4 by a plating method to a thickness of 1.0 to 20.0 μm.
【００１７】また前記絶縁基体1 に被着したメタライズ
配線層4 にロウ付けされる外部リード端子6 はコバール
金属( 鉄ーニッケルーコバルト合金) や42アロイ( 鉄ー
ニッケル合金) 等の金属材料から成り、半導体素子3 の
各電極を外部電気回路に電気的に接続する作用を為す。The external lead terminals 6 brazed to the metallized wiring layer 4 attached to the insulating base 1 are made of a metal material such as Kovar metal (iron-nickel-cobalt alloy) or 42 alloy (iron-nickel alloy). The function of electrically connecting each electrode of the semiconductor element 3 to an external electric circuit is achieved.
【００１８】前記外部リード端子6 はコバール金属等の
インゴット( 塊) を圧延加工法や打ち抜き加工法等、従
来周知の金属加工法を採用し、所定の棒状に形成するこ
とによって製作される。The external lead terminal 6 is manufactured by forming an ingot (lumps) of Kovar metal or the like into a predetermined rod shape by employing a conventionally known metal working method such as a rolling method or a punching method.
【００１９】また一方、前記絶管基体１はその上面にメ
タライズ金属層7 が被着形成されており、該メタライズ
金属層7 には金属枠体8 がロウ材9 を介してロウ付けさ
れている。On the other hand, a metallized metal layer 7 is formed on the upper surface of the above-mentioned tube body 1 and a metal frame 8 is brazed to the metallized metal layer 7 with a brazing material 9 interposed therebetween. .
【００２０】前記絶縁基体1 上面のメタライズ金属層7
はタングステン、モリブデン、マンガン等の高融点金属
粉末から成り、該メタライズ金属層7 は金属枠体8 を絶
縁基体1 にロウ付けする際の下地金属層として作用す
る。The metallized metal layer 7 on the upper surface of the insulating substrate 1
Is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like, and the metallized metal layer 7 acts as a base metal layer when the metal frame 8 is brazed to the insulating base 1.
【００２１】前記メタライズ金属層7 はタングステン等
の金属粉末に適当な有機溶剤、溶媒を添加混合して得た
金属ペーストを絶縁基体1 となるセラミックグリーンシ
ート上に従来周知のスクリーン印刷法等により所定厚み
に印刷塗布しておくことによって絶縁基体1 の上面に被
着形成される。The metallized metal layer 7 is formed by coating a metal paste obtained by adding a suitable organic solvent and a solvent to a metal powder such as tungsten on a ceramic green sheet serving as the insulating substrate 1 by a conventionally known screen printing method or the like. By printing and coating to a thickness, it is formed on the upper surface of the insulating substrate 1.
【００２２】また前記メタライズ金属層7 にロウ材9 を
介してロウ付けされる金属枠体8 はコバール金属や42ア
ロイ等の金属材料から成る金属製蓋体2 を絶縁基体1 に
取着する際の下地金属部材として作用し、金属枠体8 に
金属製蓋体2 をシームウエルド法等により溶接すること
によって金属製蓋体2 は絶縁基体1 上に取着される。A metal frame 8 brazed to the metallized metal layer 7 via a brazing material 9 is used when attaching a metal lid 2 made of a metal material such as Kovar metal or 42 alloy to the insulating base 1. The metal lid 2 is attached to the insulating base 1 by welding the metal lid 2 to the metal frame 8 by a seam welding method or the like.
【００２３】前記金属枠体8 はコバール金属や42アロイ
等の金属材料から成り、該コバール金属等のインゴット
( 塊) を圧延加工法や打ち抜き加工法等、従来周知の金
属加工法を採用することによって所定の枠状に形成され
る。The metal frame 8 is made of a metal material such as Kovar metal or 42 alloy, and is made of an ingot of the Kovar metal or the like.
The (mass) is formed into a predetermined frame shape by employing a conventionally known metal working method such as a rolling method or a punching method.
【００２４】前記金属枠体8 はまた絶縁基体1 に設けた
メタライズ金属層7 にロウ材9 を介してロウ付けされ、
該ロウ材9 は銀に金を５乃至２５重量％含有させた金ー
銀合金から成る。The metal frame 8 is brazed to a metallized metal layer 7 provided on the insulating base 1 via a brazing material 9.
The brazing material 9 is made of a gold-silver alloy containing 5 to 25% by weight of gold in silver.
【００２５】前記金ー銀合金から成るロウ材9 ははそれ
自体が化学的に安定な金がロウ材9の酸化を有効に防止
し、これによってロウ材9 自身の酸化による酸化物(
錆) の生成が皆無のものとなっている。そのため絶縁基
体1 に設けたメタライズ金属層7 に金属枠体8 をロウ材
9 を介してロウ付けした後、ロウ材9 に大気中に含まれ
る水分が接触したとしてもロウ材9 には変色等の原因と
なる脆い酸化物( 錆) が発生することは殆どなく、メタ
ライズ金属層7 と金属枠体8 とのロウ付け強度を極めて
強いものに維持することができる。The brazing material 9 made of the gold-silver alloy is a chemically stable gold, which effectively prevents the brazing material 9 from being oxidized.
Generation of rust). Therefore, a metal frame 8 is brazed to the metallized metal layer 7 provided on the insulating base 1.
Even after the brazing material 9 is brazed, even if the moisture contained in the air comes into contact with the brazing material 9, the brazing material 9 hardly generates brittle oxides (rust) that cause discoloration and the like. The brazing strength between the metal layer 7 and the metal frame 8 can be kept extremely high.
【００２６】尚、前記ロウ材9 は銀に含有させる金の含
有量が５重量％未満であると金がロウ材9 の酸化腐食、
特に銀の酸化腐食を有効に防止することができず、その
結果、ロウ材9 を構成する銀が大気中に含まれる水分等
によって腐食を受け、金属枠体8 のメタライズ金属層7
に対するロウ付け強度が大きく劣化してしまい、た２５
重量％を越えるとロウ材9 の融点が1000℃を越える高い
ものとなり、金属枠体8 を絶間基体1 に設けたメタライ
ズ金属層7 にロウ付けする際、そのロウ付けの作業性が
悪くなる。従って、前記ロウ材9 は銀に含有させる金の
含有量が５乃至２５重量％の範囲に特定される。If the content of gold contained in the brazing material 9 is less than 5% by weight, gold causes oxidation corrosion of the brazing material 9,
In particular, the oxidation corrosion of silver cannot be effectively prevented. As a result, the silver constituting the brazing material 9 is corroded by moisture or the like contained in the atmosphere, and the metallized metal layer 7
The brazing strength for the
If it exceeds 10% by weight, the melting point of the brazing material 9 will be as high as over 1000 ° C., so that when the metal frame 8 is brazed to the metallized metal layer 7 provided on the substrate 1, the workability of the brazing will deteriorate. Therefore, the brazing material 9 has a content of gold contained in silver of 5 to 25% by weight.
【００２７】かくして上述の半導体素子収納用パッケー
ジによれば絶縁基体1 の凹部1a底面に半導体素子3 をロ
ウ材、ガラス、樹脂等の接着剤を介して取着するととも
に該半導体素子3 の各電極をボンディングワイヤ5 を介
してメタライズ配線層4 に電気的に接続し、しかる後、
絶縁基体1 の上面にロウ付けした金属枠体8 に金属製蓋
体2 をシームウエルド法等により溶接し、絶縁基体1 と
金属製蓋体2 とから成る容器内部に半導体素子3 を気密
に封止することによって最終製品としての半導体装置と
なる。Thus, according to the above-described semiconductor device housing package, the semiconductor device 3 is attached to the bottom surface of the concave portion 1a of the insulating base 1 via an adhesive such as brazing material, glass, resin, etc. Is electrically connected to the metallized wiring layer 4 via the bonding wire 5, and thereafter,
A metal lid 2 is welded to a metal frame 8 brazed on the upper surface of the insulating base 1 by a seam welding method or the like, and the semiconductor element 3 is hermetically sealed inside a container including the insulating base 1 and the metal lid 2. By stopping, a semiconductor device as a final product is obtained.
【００２８】尚、本発明は上述した半導体素子収納用パ
ッケージに限定されるものではなく、本発明の要旨を逸
脱しない範囲であれば種々の変更は可能である。The present invention is not limited to the above-mentioned package for accommodating a semiconductor element, and various modifications can be made without departing from the gist of the present invention.
【００２９】[0029]
【発明の効果】本発明の半導体素子収納用パッケージに
よれば、絶縁基体に被着させたメタライズ金属層に金属
枠体を銀ー金合金から成るロウ材を介してロウ付けした
ことから、絶縁基体に被着させたメタライズ金属層に金
属枠体をロウ付けした後、ロウ材に大気中に含まれる水
分が接触したとしてもロウ材には酸化物が生成されるこ
とは一切なく、その結果、メタライズ金属層と金属枠体
とのロウ付け強度を極めて強いものに維持することが可
能となるとともに外観不良の原因となる変色の発生を皆
無となすことができる。According to the semiconductor device housing package of the present invention, the metal frame is brazed to the metallized metal layer adhered to the insulating base via a brazing material made of a silver-gold alloy. After brazing the metal frame to the metallized metal layer adhered to the substrate, no oxide is generated in the brazing material even if the moisture contained in the air comes into contact with the brazing material. As a result, In addition, the brazing strength between the metallized metal layer and the metal frame can be maintained at an extremely high level, and the occurrence of discoloration that causes poor appearance can be eliminated.
【００３０】従って、本発明の半導体素子収納用パッケ
ージによれば容器の気密封止が完全となり、内部に収容
する半導体素子を長期間にわたり正常、且つ安定に作動
させることができる。Therefore, according to the semiconductor element housing package of the present invention, the hermetic sealing of the container is completed, and the semiconductor element housed therein can be operated normally and stably for a long period of time.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の半導体素子収納用パッケージの一実施
例を示す断面図ある。FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element according to the present invention.
【図２】図１に示す半導体素子収納用パッケージの要部
拡大断面図である。2 is an enlarged cross-sectional view of a main part of the package for housing a semiconductor element shown in FIG. 1;
１・・・・・絶縁基体 ２・・・・・蓋体 ３・・・・・半導体素子 ４・・・・・メタライズ配線層 ６・・・・・外部リード端子 ７・・・・・メタライズ金属層 ８・・・・・金属枠体 ９・・・・・ロウ材 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Semiconductor element 4 ... Metallized wiring layer 6 ... External lead terminal 7 ... Metallized metal Layer 8: Metal frame 9: Brazing material
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 23/02──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 23/02
Claims (1)
に金属枠体をロウ材を介しロウ付けするとともに該金属
枠体に金属製蓋体を取着し、内部に半導体素子を気密に
収容するようになした半導体素子収納用パッケージであ
って、前記ロウ材が銀に金を５乃至２５重量％含有させ
た金ー銀合金から成ることを特徴とする半導体素子収納
用パッケージ。1. A metal frame is brazed to a metallized metal layer provided on the surface of an insulating substrate via a brazing material, and a metal lid is attached to the metal frame to hermetically accommodate a semiconductor element therein. A package for semiconductor element storage, wherein the brazing material is made of a gold-silver alloy containing 5 to 25% by weight of gold in silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4268471A JP2750248B2 (en) | 1992-10-07 | 1992-10-07 | Package for storing semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4268471A JP2750248B2 (en) | 1992-10-07 | 1992-10-07 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06120364A JPH06120364A (en) | 1994-04-28 |
| JP2750248B2 true JP2750248B2 (en) | 1998-05-13 |
Family
ID=17458966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4268471A Expired - Lifetime JP2750248B2 (en) | 1992-10-07 | 1992-10-07 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2750248B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5945735A (en) * | 1997-01-31 | 1999-08-31 | International Business Machines Corporation | Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity |
| JP3398721B2 (en) * | 1999-05-20 | 2003-04-21 | アムコー テクノロジー コリア インコーポレーティド | Semiconductor package and manufacturing method thereof |
| US9466545B1 (en) | 2007-02-21 | 2016-10-11 | Amkor Technology, Inc. | Semiconductor package in package |
-
1992
- 1992-10-07 JP JP4268471A patent/JP2750248B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06120364A (en) | 1994-04-28 |
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