JP2740606B2 - Package for storing semiconductor elements - Google Patents
Package for storing semiconductor elementsInfo
- Publication number
- JP2740606B2 JP2740606B2 JP4319119A JP31911992A JP2740606B2 JP 2740606 B2 JP2740606 B2 JP 2740606B2 JP 4319119 A JP4319119 A JP 4319119A JP 31911992 A JP31911992 A JP 31911992A JP 2740606 B2 JP2740606 B2 JP 2740606B2
- Authority
- JP
- Japan
- Prior art keywords
- lid
- metal layer
- insulating base
- semiconductor element
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体素子を収容するた
めの半導体素子収納用パッケージに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device.
【０００２】[0002]
【従来の技術】従来、半導体素子、特にＬＳＩ等の半導
体素子を収容するための半導体素子収納用パッケージ、
例えばプラグイン型の半導体素子収納用パッケージはア
ルミナセラミックス等の電気絶縁材料から成り、その上
面の略中央部に半導体素子を収容するための凹部を有
し、且つ該凹部周辺から下面にかけて導出されたタング
ステン、モリブデン、マンガン等の高融点金属粉末から
成るメタライズ配線層を有する絶縁基体と、半導体素子
を外部電気回路に電気的に接続するために前記メタライ
ズ配線層に銀ロウ等のロウ材を介し取着された外部リー
ド端子と、アルミナセラミックス等の電気絶縁材料から
成る蓋体とから構成されており、絶縁基体の凹部底面に
半導体素子を接着剤を介して取着固定し、半導体素子の
各電極とメタライズ配線層とをボンディングワイヤを介
して電気的に接続するとともに絶縁基体の上面に蓋体を
半田等から成る封止材により接合させ、絶縁基体と蓋体
とから成る容器の内部に半導体素子を気密に封止するこ
とによって製品としての半導体装置となる。2. Description of the Related Art Conventionally, semiconductor device housing packages for housing semiconductor devices, particularly semiconductor devices such as LSIs,
For example, a plug-in type semiconductor element housing package is made of an electrically insulating material such as alumina ceramics, has a concave portion for housing the semiconductor element at a substantially central portion of the upper surface, and is led out from the periphery of the concave portion to the lower surface. An insulating base having a metallized wiring layer made of a refractory metal powder of tungsten, molybdenum, manganese, etc., and a brazing material such as silver brazed to the metallized wiring layer for electrically connecting a semiconductor element to an external electric circuit. And a lid made of an electrically insulating material such as alumina ceramics. The semiconductor element is attached and fixed to the bottom surface of the concave portion of the insulating base via an adhesive, and each electrode of the semiconductor element is fixed. And the metallized wiring layer are electrically connected via bonding wires, and the lid is sealed with solder or the like on the upper surface of the insulating base. They are joined by, a semiconductor device as a product by sealing a semiconductor element hermetically in the interior of the container consisting of an insulating substrate and the lid.
【０００３】尚、かかる従来の半導体素子収納用パッケ
ージは絶縁基体と蓋体の接合が、絶縁基体の上面に予め
タングステン、モリブデン、マンガン等の高融点金属粉
末から成る金属層を、また蓋体の下面に予め銀 パラジ
ウム、もしくは銀 白金から成る金属層を被着させてお
き、絶縁基体上面の金属層と、蓋体下面の金属層とを封
止材である半田を介し接合させることによって行われて
いる。In such a conventional package for housing a semiconductor element, an insulating base and a lid are joined together by forming a metal layer made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like on the upper surface of the insulating base. A metal layer made of silver-palladium or silver-platinum is previously adhered to the lower surface, and the metal layer on the upper surface of the insulating substrate and the metal layer on the lower surface of the lid are joined via solder as a sealing material. ing.
【０００４】また、前記蓋体の下面に被着されている銀
パラジウム、銀 白金から成る金属層はパラジウムも
しくは白金の含有量が少ないと絶縁基体上面の金属層
と、蓋体下面の金属層とを半田を介して接合させる際、
蓋体下面の金属層が半田に吸収され、絶縁基体と蓋体と
を強固に接合させることが困難となるため通常、銀にパ
ラジウムもしくは白金を１５．０〜３０．０重量％を含
有させたものが使用されている。In addition, the metal layer made of silver-palladium and silver-platinum adhered to the lower surface of the lid has a low content of palladium or platinum, and the metal layer on the upper surface of the insulating base and the metal layer on the lower surface of the lid have When joining with solder
Since the metal layer on the lower surface of the lid is absorbed by the solder, and it becomes difficult to firmly join the insulating base and the lid, 15.0 to 30.0% by weight of palladium or platinum is usually contained in silver. Things are used.
【０００５】更に前記蓋体側の金属層は銀 パラジウム
粉末もしくは銀 白金粉末にガラスフリットを含有させ
て成る金属ペーストを蓋体の下面に所定厚みに塗布し、
しかる後、これを約８５０℃の温度で焼成し、蓋体の下
面に銀 パラジウム粉末もしくは銀 白金粉末をガラス
を介し接合させることによって蓋体の下面に被着され
る。Further, the metal layer on the side of the lid is coated with a metal paste made of silver-palladium powder or silver-platinum powder containing glass frit on a lower surface of the lid to a predetermined thickness,
Thereafter, this is fired at a temperature of about 850 ° C., and silver palladium powder or silver platinum powder is bonded to the lower surface of the lid via glass, so that it is adhered to the lower surface of the lid.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、近時、
半導体素子は高集積化に伴って大型化が急速に進んでお
り、該半導体素子を収容する半導体素子収納用パッケー
ジもその全体形状が大きくなり、絶縁基体と蓋体との接
合部面積も広いものとなってきた。そのためこの半導体
素子収納用パッケージ内に半導体素子を気密に収容し、
半導体装置となした後、半導体素子を作動させた場合、
半導体素子が作動時に多量の熱を繰り返し発すると蓋体
の熱膨張係数が封止材である半田の熱膨張係数と相違す
ること及び蓋体に被着させた金属層と半田との接合部面
積が広いこと等から蓋体と半田との間に大きな熱応力が
発生し、該熱応力によって蓋体に銀 パラジウム、もし
くは銀 白金粉末を接合させているガラスに破壊が起こ
り、蓋体の金属層が蓋体から剥離して絶縁基体と蓋体と
から成る容器の気密封止が破れるという欠点を有してい
た。However, recently,
2. Description of the Related Art Semiconductor devices have been rapidly increasing in size with higher integration, and the semiconductor device housing package for housing the semiconductor devices has also become larger in overall shape, and has a larger joint area between an insulating base and a lid. It has become. Therefore, the semiconductor element is hermetically housed in the semiconductor element housing package,
When the semiconductor device is activated after the semiconductor device,
When the semiconductor element repeatedly generates a large amount of heat during operation, the thermal expansion coefficient of the lid is different from the thermal expansion coefficient of the solder which is the sealing material, and the area of the joint between the metal layer applied to the lid and the solder Large thermal stress is generated between the lid and the solder due to the large size of the lid, and the thermal stress destroys the glass to which the silver-palladium or silver-platinum powder is bonded to the lid and causes the metal layer of the lid to be broken. However, there is a disadvantage that the hermetic sealing of the container formed of the insulating base and the lid is broken by peeling off from the lid.
【０００７】[0007]
【発明の目的】本発明は上記欠点に鑑みて案出されたも
ので、その目的は絶縁基体と蓋体との接合を強固にし、
絶縁基体と蓋体とから成る容器内部に半導体素子を気密
に封止し、半導体素子を長期間にわたり、正常、且つ安
定に作動させることができる半導体素子収納用パッケー
ジを提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to strengthen the bonding between an insulating base and a lid,
An object of the present invention is to provide a semiconductor element housing package in which a semiconductor element is hermetically sealed in a container including an insulating base and a lid, and the semiconductor element can be normally and stably operated for a long period of time.
【０００８】[0008]
【課題を解決するための手段】本発明は上面に金属層を
有する絶縁基体と、下面に金属層を有する蓋体とから成
り、絶縁基体と蓋体の各金属層を封止材を介し接合させ
ることによって内部に半導体素子を気密に封止する半導
体素子収納用パッケージにおいて、前記蓋体の金属層は
銀にパラジウムもしくは白金を１５．０重量％以上、銅
を０．５重量％以上含有させた金属から成ることを特徴
とするものである。SUMMARY OF THE INVENTION The present invention comprises an insulating substrate having a metal layer on the upper surface and a lid having a metal layer on the lower surface. The metal layers of the insulating substrate and the lid are joined via a sealing material. In the semiconductor device housing package in which the semiconductor element is hermetically sealed therein, the metal layer of the lid contains palladium or platinum in silver at 15.0% by weight or more and copper at 0.5% by weight or more. Characterized by being made of metal.
【０００９】[0009]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
【００１０】図１は本発明の半導体素子収納用パッケー
ジをプラグイン型の半導体素子収納用パッケージを例に
採って示す断面図であり、１は絶縁基体、２は蓋体であ
る。この絶縁基体１と蓋体２とで半導体素子３を収容す
るための容器４が構成される。FIG. 1 is a cross-sectional view of a package for accommodating a semiconductor device according to the present invention, taking a plug-in type package for accommodating a semiconductor device as an example, wherein 1 is an insulating base and 2 is a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the semiconductor element 3.
【００１１】前記絶縁基体１はアルミナセラミックス等
の電気絶縁材料から成り、その上面略中央部に半導体素
子３を収容するための空所を形成する凹部１ａが設けて
あり、該凹部１ａ底面には半導体素子３がエポキシ樹脂
等の接着剤を介し取着される。The insulating substrate 1 is made of an electrically insulating material such as alumina ceramics, and has a concave portion 1a for forming a space for accommodating the semiconductor element 3 at a substantially central portion of an upper surface thereof, and a bottom surface of the concave portion 1a. The semiconductor element 3 is attached via an adhesive such as an epoxy resin.
【００１２】また前記絶縁基体１には凹部１ａ周辺から
下面にかけて導出する複数のメタライズ配線層５が形成
されており、該メタライズ配線層５の凹部１ａ周辺部に
は半導体素子３の各電極がボンディングワイヤ６を介し
て電気的に接続され、また下面に導出された部位には外
部電気回路と接続される外部リード端子７が銀ロウ等の
ロウ材を介し取着される。A plurality of metallized wiring layers 5 extending from the periphery of the concave portion 1a to the lower surface are formed in the insulating base 1, and each electrode of the semiconductor element 3 is bonded around the concave portion 1a of the metallized wiring layer 5. External lead terminals 7 electrically connected via wires 6 and connected to an external electric circuit are attached to portions led out to the lower surface via a brazing material such as silver brazing.
【００１３】前記絶縁基体１は例えば、アルミナ（Ａｌ
2 Ｏ3 ）、シリカ（ＳｉＯ2 ）、カルシア（ＣａＯ）、
マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤、
溶媒を添加混合して泥漿状となすとともにこれを従来周
知のドクターブレード法やカレンダーロール法等を採用
することによってセラミックグリーンシート（セラミッ
ク生シート）を形成し、しかる後、前記セラミックグリ
ーンシートに適当な打ち抜き加工を施すとともに複数枚
積層し、高温（約１６００℃）で焼成することによって
製作される。The insulating substrate 1 is made of, for example, alumina (Al).
2 O 3 ), silica (SiO 2 ), calcia (CaO),
Organic solvent suitable for raw material powder such as magnesia (MgO),
A solvent is added and mixed to form a slurry, and a ceramic green sheet (ceramic green sheet) is formed by employing a doctor blade method, a calendar roll method, or the like, which is well known in the art. It is manufactured by performing a punching process, stacking a plurality of layers, and firing at a high temperature (about 1600 ° C.).
【００１４】また前記メタライズ配線層５はタングステ
ン、モリブデン、マンガン等の高融点金属粉末から成
り、該高融点金属粉末に適当な有機溶剤、溶媒を添加混
合して得た金属ペーストを従来周知のスクリーン印刷法
を採用し、絶縁基体１となるセラミックグリーンシート
に予め所定パターンに印刷塗布しておくことによって絶
縁基体１の凹部１ａ周辺から下面にかけて被着形成され
る。The metallized wiring layer 5 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like. A metal paste obtained by adding an appropriate organic solvent and a solvent to the high melting point metal powder is mixed with a conventionally known screen. By applying a printing method and printing and applying a predetermined pattern on a ceramic green sheet serving as the insulating base 1 in advance, the insulating green base 1 is adhered and formed from the periphery of the concave portion 1a to the lower surface.
【００１５】尚、前記メタライズ配線層５はその露出す
る表面にニッケル、金等の良導電性で、耐蝕性に優れ、
且つロウ材と濡れ性の良い金属をメッキ法により０. １
乃至２０. ０μｍの厚みに層着させておくとメタライズ
配線層５の酸化腐食を有効に防止することができるとと
もにメタライズ配線層５とボンディングワイヤ６との接
続及びメタライズ配線層５と外部リード端子７とのロウ
付けを極めて強固なものとなすことができる。従って、
前記メタライズ配線層５の酸化腐食を防止し、メタライ
ズ配線層５とボンディングワイヤ６との接続及びメタラ
イズ配線層５と外部リード端子７とのロウ付けを強固と
するにはメタライズ配線層５の露出する表面にニッケ
ル、金等を１. ０乃至２０. ０μｍの厚みに層着させて
おくことが好ましい。The exposed surface of the metallized wiring layer 5 has good conductivity of nickel, gold or the like and excellent corrosion resistance.
In addition, a metal having good wettability with the brazing material is plated by a plating method.
When the metallized wiring layer 5 and the external lead terminals 7 are connected to each other, the metallized wiring layer 5 can be effectively prevented from being oxidized and corroded. Can be made extremely strong. Therefore,
The metallized wiring layer 5 is exposed to prevent the metallized wiring layer 5 from being oxidized and corroded, and to firmly connect the metallized wiring layer 5 to the bonding wires 6 and braze the metallized wiring layer 5 to the external lead terminals 7. It is preferable that nickel, gold, or the like is layered on the surface to a thickness of 1.0 to 20.0 μm.
【００１６】更に前記メタライズ配線層５にロウ付けさ
れる外部リード端子７は内部に収容する半導体素子３を
外部電気回路に接続する作用を為し、外部リード端子７
を外部電気回路に接続することによって内部に収容され
る半導体素子３はメタライズ配線層５及び外部リード端
子７を介し外部電気回路と電気的に接続されることとな
る。Further, the external lead terminals 7 brazed to the metallized wiring layer 5 serve to connect the semiconductor element 3 housed therein to an external electric circuit.
Is connected to an external electric circuit, whereby the semiconductor element 3 housed inside is electrically connected to the external electric circuit via the metallized wiring layer 5 and the external lead terminals 7.
【００１７】前記外部リード端子７はコバール金属（Ｆ
ｅ−Ｎｉ−Ｃｏ合金）や４２アロイ（Ｆｅ−Ｎｉ合金）
等の金属材料から成り、コバール金属等のインゴット
（塊）を圧延加工法や打ち抜き加工法等、従来周知の金
属加工法を採用することによって所定の板状に形成され
る。The external lead terminal 7 is made of Kovar metal (F
e-Ni-Co alloy) and 42 alloy (Fe-Ni alloy)
The ingot (lumps) of Kovar metal or the like is formed into a predetermined plate shape by employing a conventionally known metal working method such as a rolling method or a punching method.
【００１８】前記外部リード端子７はメタライズ配線層
５と同様、その露出表面にニッケル、金等を従来周知の
メッキ法により１. ０乃至２０. ０μｍの厚みに層着さ
せておけば外部リード端子７を外部電気回路に確実に強
固に接続することができる。従って、外部リード端子７
の露出する表面にもニッケル、金等を１. ０乃至２０.
０μｍの厚みに層着させておくことが好ましい。As with the metallized wiring layer 5, the external lead terminals 7 can be formed by coating nickel, gold, or the like on the exposed surface to a thickness of 1.0 to 20.0 μm by a conventionally known plating method. 7 can be securely and firmly connected to an external electric circuit. Therefore, the external lead terminals 7
Nickel, gold, etc. are also applied to the exposed surface from 1.0 to 20.
It is preferable to apply a layer to a thickness of 0 μm.
【００１９】前記絶縁基体１はまたその上面にタングス
テン、モリブデン、マンガン等から成る金属層８が形成
されており、該金属層８には蓋体２が半田から成る封止
材９を介して接合され、これによって絶縁基体１と蓋体
２とから成る容器４の内部に半導体素子３が気密に封入
される。On the upper surface of the insulating substrate 1, a metal layer 8 made of tungsten, molybdenum, manganese or the like is formed, and the lid 2 is joined to the metal layer 8 via a sealing material 9 made of solder. As a result, the semiconductor element 3 is hermetically sealed inside the container 4 including the insulating base 1 and the lid 2.
【００２０】前記絶縁基体１の上面に形成した金属層８
は例えば、タングステン、モリブデン、マンガン等の高
融点金属粉末から成り、該高融点金属粉末に適当な有機
溶剤、溶媒を添加混合して得た金属ペーストを従来周知
のスクリーン印刷法等を採用し、絶縁基体１となるセラ
ミックグリーンシートに予め印刷塗布しておくことによ
って絶縁基体１の上面に形成される。The metal layer 8 formed on the upper surface of the insulating base 1
For example, tungsten, molybdenum, made of a high melting point metal powder such as manganese, a suitable organic solvent to the high melting point metal powder, a metal paste obtained by adding and mixing a solvent using a conventionally well-known screen printing method, etc. The ceramic green sheet serving as the insulating substrate 1 is formed on the upper surface of the insulating substrate 1 by printing in advance.
【００２１】尚、前記金属層８の表面には封止材９との
濡れ性（反応性）を改善するためにニッケルから成る層
と金から成る層が順次層着されている。A layer made of nickel and a layer made of gold are sequentially deposited on the surface of the metal layer 8 in order to improve the wettability (reactivity) with the sealing material 9.
【００２２】また前記絶縁基体１の上面に接合される蓋
体２はアルミナセラミックス等の電気絶縁材料から成
り、その下面外周部に予め金属層１０を被着させてお
き、該金属層１０を絶縁基体１上面の金属層８に半田か
ら成る封止材９を介し接合させることによって蓋体２は
絶縁基体１に接合されることとなる。The lid 2 joined to the upper surface of the insulating base 1 is made of an electrically insulating material such as alumina ceramics, and a metal layer 10 is previously applied to the outer peripheral portion of the lower surface, and the metal layer 10 is insulated. The lid 2 is joined to the insulating base 1 by joining to the metal layer 8 on the upper surface of the base 1 via a sealing material 9 made of solder.
【００２３】前記蓋体２は例えばアルミナ（Ａｌ
2 Ｏ3 ）、シリカ（ＳｉＯ2 ）、カルシア（ＣａＯ）、
マグネシア（ＭｇＯ）等に適当な有機溶剤、溶媒を添加
混合して得た原料粉末を所定形状のプレス金型内に充填
するとともに一定圧力で押圧して形成し、しかる後、前
記成形品を約１５００℃の温度で焼成することによって
製作される。The lid 2 is made of, for example, alumina (Al).
2 O 3 ), silica (SiO 2 ), calcia (CaO),
A raw material powder obtained by adding and mixing an appropriate organic solvent and a solvent to magnesia (MgO) or the like is filled in a press die having a predetermined shape, and is formed by pressing at a constant pressure. It is manufactured by firing at a temperature of 1500 ° C.
【００２４】また前記蓋体２に被着される金属層１０は
銀にパラジウムもしくは白金を１５．０重量％以上、銅
を０．５重量％以上含有させた金属から成り、該金属層
１０は所定量の銀粉末、パラジウム粉末、白金粉末、銅
粉末に適当な溶媒、溶剤を添加混合することによって得
た金属ペーストを蓋体２の下面外周に従来周知のスクリ
ーン印刷法等により塗布させ、しかる後、これを９００
℃の温度で焼き付けることによって蓋体２の下面外周部
に被着される。The metal layer 10 applied to the lid 2 is made of a metal containing palladium or platinum in silver at 15.0% by weight or more and copper at 0.5% by weight or more. A metal paste obtained by adding a predetermined amount of silver powder, palladium powder, platinum powder, and copper powder to a suitable solvent and a solvent is applied to the outer periphery of the lower surface of the lid 2 by a conventionally known screen printing method or the like. Later, 900
By baking at a temperature of ° C., it is attached to the outer peripheral portion of the lower surface of the lid 2.
【００２５】前記金属層１０はその内部にパラジウムも
しくは白金が１５．０重量％以上含有されていることか
ら金属層１０の酸化及び封止材である半田に吸収される
のが有効に防止され、これによって絶縁基体１の上面に
被着させた金属層８と蓋体２の下面に被着させた金属層
１０とを半田から成る封止材９を介して接合させる際、
封止材９は絶縁基体１及び蓋体２の両方に被着させた金
属層８、１０の各々に強固に接合し、その結果、容器４
の気密封止の信頼性が大幅に向上する。Since the metal layer 10 contains at least 15.0% by weight of palladium or platinum, the metal layer 10 is effectively prevented from being oxidized and absorbed by the solder which is a sealing material. When the metal layer 8 adhered to the upper surface of the insulating base 1 and the metal layer 10 adhered to the lower surface of the lid 2 are joined via the sealing material 9 made of solder,
The sealing material 9 is firmly bonded to each of the metal layers 8 and 10 attached to both the insulating base 1 and the lid 2, and as a result, the container 4
The reliability of hermetic sealing is greatly improved.
【００２６】前記金属層１０はまたその内部に銅が０．
５重量％以上含有されていることから、金属層１０を蓋
体２の下面外周部に被着させる際、両者の接合部に金属
層１０の銅と蓋体２のアルミナセラミックスとが反応し
てアルミン酸銅（ＣｕＡｌ2Ｏ4 ）から成る化合物層が
生成され、該化合物によって金属層１０は蓋体２に極め
て強固に被着されることとなる。従って、蓋体２と金属
層１０との間に蓋体２と封止材９である半田との熱膨張
係数の相違に起因して発生する熱応力等が作用したとし
ても、金属層１０は蓋体２から剥離することはなく、そ
の結果、蓋体２を絶縁基体１に強固に接合させて容器４
の気密封止を維持することが可能となる。The metal layer 10 also contains copper in its interior.
Since the metal layer 10 is contained in an amount of 5% by weight or more, when the metal layer 10 is adhered to the outer peripheral portion of the lower surface of the lid 2, the copper of the metal layer 10 and the alumina ceramics of the lid 2 react with each other at the joint therebetween. A compound layer composed of copper aluminate (CuAl 2 O 4 ) is generated, and the metal layer 10 is extremely firmly adhered to the lid 2 by the compound. Therefore, even if a thermal stress or the like generated due to a difference in thermal expansion coefficient between the lid 2 and the solder as the sealing material 9 acts between the lid 2 and the metal layer 10, the metal layer 10 remains As a result, the lid 2 is firmly joined to the insulating base 1 and the container 4
Can be maintained airtight.
【００２７】尚、前記金属層１０に含まれるパラジウム
もしくは白金はその含有量は１５．０重量％未満である
と金属層１０の酸化及び封止材である半田への吸収が有
効に防止されず、金属層１０と封止材９との接合強度が
低下するとともに絶縁基体１と蓋体２との接合が弱いも
のとなってしまう。従って、前記金属層１０に含有され
るパラジウムもしくは白金はその含有量が１５．０重量
％以上に特定され、コストの点を考慮すれば１５．０乃
至２５．０重量％の範囲とすることが好ましい。If the content of palladium or platinum contained in the metal layer 10 is less than 15.0% by weight, the oxidation of the metal layer 10 and the absorption of the metal layer 10 into solder as a sealing material cannot be effectively prevented. In addition, the bonding strength between the metal layer 10 and the sealing material 9 decreases, and the bonding between the insulating base 1 and the lid 2 becomes weak. Therefore, the content of palladium or platinum contained in the metal layer 10 is specified to be 15.0% by weight or more, and from the viewpoint of cost, the content may be in the range of 15.0 to 25.0% by weight. preferable.
【００２８】また前記金属層１０に含まれる銅はその含
有量が０．５重量％未満であると金属層１０と蓋体２と
の間に生成される化合物層の絶対量が少なくなって金属
層１０を蓋体２に強固に被着させることができなくな
る。従って、前記金属層１０に含有される銅はその含有
量が０．５重量％以上に特定される。If the content of copper contained in the metal layer 10 is less than 0.5% by weight, the absolute amount of the compound layer formed between the metal layer 10 and the lid 2 is reduced, and The layer 10 cannot be firmly adhered to the lid 2. Therefore, the content of copper contained in the metal layer 10 is specified to be 0.5% by weight or more.
【００２９】更に前記金属層１０に含まれる銅はその含
有量が５．０重量％を越えると金属層１０の表面に多量
の銅が露出し、これが酸化されて金属層１０表面に封止
材である半田に対し濡れ性の悪い酸化物膜が形成されて
しまい、その結果、絶縁基体１と蓋体２とをその各々に
被着させた金属層８、１０を半田を介して接合させ、容
器４の内部に半導体素子３を気密に封入させる際、絶縁
基体１と蓋体２との接合が不完全となって半導体素子３
の気密封入が困難となってしまう。従って、前記金属層
１０に含まれる銅はその含有量を５．０重量％以下とし
ておくことが好ましい。Further, when the content of copper contained in the metal layer 10 exceeds 5.0% by weight, a large amount of copper is exposed on the surface of the metal layer 10 and is oxidized to form a sealing material on the surface of the metal layer 10. As a result, an oxide film having poor wettability with respect to the solder is formed, and as a result, the metal layers 8 and 10 on which the insulating base 1 and the lid 2 are respectively adhered are joined via the solder. When the semiconductor element 3 is hermetically sealed in the container 4, the bonding between the insulating base 1 and the lid 2 is incomplete and the semiconductor element 3
It becomes difficult to airtightly seal. Therefore, the content of copper contained in the metal layer 10 is preferably set to 5.0% by weight or less.
【００３０】また更に、前記金属層１０はその厚みを
２．０〜３０．０μｍの範囲にしておくと金属層１０を
蓋体２に極めて強固に接合させることができる。従って
金属層１０の厚みは２．０〜３０．０μｍの範囲にして
おくことが好ましい。Further, if the thickness of the metal layer 10 is set in the range of 2.0 to 30.0 μm, the metal layer 10 can be very firmly joined to the lid 2. Therefore, it is preferable that the thickness of the metal layer 10 be in the range of 2.0 to 30.0 μm.
【００３１】かくして本発明の半導体素子収納用パッケ
ージによれば絶縁基体１の凹部１ａ底面に半導体素子３
を接着剤を介して取着するとともに半導体素子３の各電
極をメタライズ配線層５にボンディングワイヤ６を介し
て電気的に接続し、しかる後、絶縁基体１の上面に形成
した金属層８と蓋体２の下面に形成した金属層１０とを
半田から成る封止材９により接合させ、絶縁基体１と蓋
体２とから成る容器４の内部に半導体素子３を気密に封
止することによって製品としての半導体装置となる。Thus, according to the package for housing a semiconductor element of the present invention, the semiconductor element 3
And the electrodes of the semiconductor element 3 are electrically connected to the metallized wiring layer 5 via bonding wires 6. Thereafter, the metal layer 8 formed on the upper surface of the insulating base 1 and the cover A metal layer 10 formed on the lower surface of the body 2 is joined with a sealing material 9 made of solder, and the semiconductor element 3 is hermetically sealed inside a container 4 formed of the insulating base 1 and the lid 2. As a semiconductor device.
【００３２】尚、本発明は前記実施例に限定されるもの
ではなく、本発明の要旨を逸脱しない範囲であれば種々
の変更は可能であり、例えば絶縁基体１の上面に被着す
る金属層８を蓋体２の下面に被着させた金属層１０と同
じ材質、同じ層構造としておいてもよい。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, a metal layer adhered on the upper surface of the insulating substrate 1 8 may be made of the same material and the same layer structure as the metal layer 10 attached to the lower surface of the lid 2.
【００３３】[0033]
【発明の効果】本発明の半導体素子収納用パッケージに
よれば、蓋体の下面外周に被着させた金属層を銀にパラ
ジウムもしくは白金を１５．０重量％以上、銅を０．５
重量％以上含有させた金属層で形成したことから金属層
が酸化されることも金属層が封止材である半田に吸収さ
れることもなく、その結果、絶縁基体の上面に被着させ
た金属層と蓋体の下面に被着させた金属層とを半田から
成る封止材を介して接合させる際、封止材は絶縁基体及
び蓋体の両方に被着させた金属層の各々に強固に接合
し、容器の気密封止の信頼性が大幅に向上する。According to the semiconductor device housing package of the present invention, the metal layer applied to the outer periphery of the lower surface of the lid is made of silver, palladium or platinum of 15.0% by weight or more, and copper of 0.5% or more.
Since the metal layer was formed of a metal layer containing at least 10% by weight, the metal layer was neither oxidized nor absorbed by the solder serving as a sealing material, and as a result, the metal layer was adhered to the upper surface of the insulating base. When joining the metal layer and the metal layer applied to the lower surface of the lid via a sealing material made of solder, the sealing material is applied to each of the metal layers applied to both the insulating base and the lid. Strongly joined, greatly improving the reliability of hermetic sealing of the container.
【００３４】また蓋体に被着させた金属層は金属層と蓋
体との反応により生成される化合物層を介して接合され
ることからその接合強度は極めて強固となり、その結
果、蓋体と金属層との間に蓋体と封止材である半田との
熱膨張係数の相違して起因して発生する熱応力等が作用
したとしても、金属層は蓋体から剥離することはなく、
蓋体を絶縁基体に強固に接合させて容器の気密封止を維
持することも可能となる。Further, since the metal layer adhered to the lid is bonded via the compound layer formed by the reaction between the metal layer and the lid, the bonding strength becomes extremely strong, and as a result, the Even if a thermal stress or the like generated due to a difference in thermal expansion coefficient between the lid and the solder that is the sealing material acts between the metal layer, the metal layer does not peel from the lid,
The lid can be firmly joined to the insulating base to keep the container airtight.
【００３５】従って、本発明の半導体素子収納用パッケ
ージは絶縁基体と蓋体とからなる容器内部に半導体素子
を気密に封入することが可能となり、半導体素子を長期
間にわたり、正常、且つ安定に作動させることができ
る。Therefore, the semiconductor element storage package of the present invention enables the semiconductor element to be hermetically sealed in a container comprising the insulating base and the lid, and allows the semiconductor element to operate normally and stably for a long period of time. Can be done.
【図１】本発明の半導体素子収納用パッケージの一実施
例を示す断面図である。FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.
１・・・絶縁基体 ２・・・蓋体 ３・・・半導体素子 ４・・・容器 ５・・・メタライズ配線層 ７・・・外部リード端子 ８・・・絶縁基体に被着させた金属層 ９・・・封止材 １０・・・蓋体に被着させた金属層 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... Metallized wiring layer 7 ... External lead terminal 8 ... Metal layer adhered to insulating base 9: sealing material 10: metal layer adhered to the lid
Claims (1)
金属層を有する蓋体とから成り、絶縁基体と蓋体の各金
属層を封止材を介し接合させることによって内部に半導
体素子を気密に封止する半導体素子収納用パッケージに
おいて、前記蓋体の金属層は銀にパラジウムもしくは白
金を１５．０重量％以上、銅を０．５重量％以上含有さ
せた金属から成ることを特徴とする半導体素子収納用パ
ッケージ。1. A semiconductor device comprising: an insulating base having a metal layer on an upper surface; and a lid having a metal layer on a lower surface. Wherein the metal layer of the lid is made of a metal containing 15.0% by weight or more of palladium or platinum and 0.5% by weight or more of copper in silver. Semiconductor device package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4319119A JP2740606B2 (en) | 1992-11-30 | 1992-11-30 | Package for storing semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4319119A JP2740606B2 (en) | 1992-11-30 | 1992-11-30 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06169027A JPH06169027A (en) | 1994-06-14 |
| JP2740606B2 true JP2740606B2 (en) | 1998-04-15 |
Family
ID=18106679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4319119A Expired - Fee Related JP2740606B2 (en) | 1992-11-30 | 1992-11-30 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2740606B2 (en) |
-
1992
- 1992-11-30 JP JP4319119A patent/JP2740606B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06169027A (en) | 1994-06-14 |
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