JP2660128B2 - 位相変化マスクの製造方法 - Google Patents
位相変化マスクの製造方法Info
- Publication number
- JP2660128B2 JP2660128B2 JP32588791A JP32588791A JP2660128B2 JP 2660128 B2 JP2660128 B2 JP 2660128B2 JP 32588791 A JP32588791 A JP 32588791A JP 32588791 A JP32588791 A JP 32588791A JP 2660128 B2 JP2660128 B2 JP 2660128B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- phase change
- film
- etched
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000005530 etching Methods 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims 1
- 239000011651 chromium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR91-6990 | 1991-04-30 | ||
KR1019910006990A KR940003582B1 (ko) | 1991-04-30 | 1991-04-30 | 위상변화 마스크의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04355758A JPH04355758A (ja) | 1992-12-09 |
JP2660128B2 true JP2660128B2 (ja) | 1997-10-08 |
Family
ID=19313910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32588791A Expired - Fee Related JP2660128B2 (ja) | 1991-04-30 | 1991-12-10 | 位相変化マスクの製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2660128B2 (ko) |
KR (1) | KR940003582B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3257893B2 (ja) * | 1993-10-18 | 2002-02-18 | 三菱電機株式会社 | 位相シフトマスク、その位相シフトマスクの製造方法およびその位相シフトマスクを用いた露光方法 |
JP3713921B2 (ja) | 1996-10-24 | 2005-11-09 | セイコーエプソン株式会社 | インクジェット式記録ヘッドの製造方法 |
JP5229838B2 (ja) * | 2011-11-09 | 2013-07-03 | Hoya株式会社 | マスクブランク及びフォトマスク |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02211450A (ja) * | 1989-02-10 | 1990-08-22 | Fujitsu Ltd | 位相シフトマスクおよびその製造方法 |
-
1991
- 1991-04-30 KR KR1019910006990A patent/KR940003582B1/ko not_active IP Right Cessation
- 1991-12-10 JP JP32588791A patent/JP2660128B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04355758A (ja) | 1992-12-09 |
KR940003582B1 (ko) | 1994-04-25 |
KR920020615A (ko) | 1992-11-21 |
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