JP2644705B2 - Device manufacturing method and exposure apparatus - Google Patents
Device manufacturing method and exposure apparatusInfo
- Publication number
- JP2644705B2 JP2644705B2 JP7180070A JP18007095A JP2644705B2 JP 2644705 B2 JP2644705 B2 JP 2644705B2 JP 7180070 A JP7180070 A JP 7180070A JP 18007095 A JP18007095 A JP 18007095A JP 2644705 B2 JP2644705 B2 JP 2644705B2
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- exposure apparatus
- sealing means
- transmission
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は素子製造方法及び露
光装置に関するものであり、特にエキシマレーザー等の
露光用光源からの紫外線を用いて素子を製造する素子製
造方法及びエキシマレーザー等の露光用光源からの紫外
線を用いて基板を露光する露光装置に関する。TECHNICAL FIELD The present invention relates to device manufacturing methods and dew
The present invention relates to an optical device , particularly to an element manufacturing method for manufacturing an element using ultraviolet light from an exposure light source such as an excimer laser, and ultraviolet light from an exposure light source such as an excimer laser.
The present invention relates to an exposure apparatus that exposes a substrate using lines .
【０００２】[0002]
【従来の技術】近年、ＬＳＩの高集積化に伴い、大強度
の遠紫外線を放射するエキシマレーザを露光用光源とし
て用いた露光装置の実用化が要望されている。2. Description of the Related Art In recent years, with the increasing integration of LSIs, there has been a demand for practical use of an exposure apparatus using an excimer laser which emits high-intensity far ultraviolet rays as an exposure light source.
【０００３】[0003]
【発明が解決しようとする課題】エキシマレーザは大強
度の光を放射するため、露光装置のスループットの向上
に極めて有用であるが、この大強度のレーザ光は紫外線
であるため光学系の特性が劣化することが判明した。An excimer laser emits high-intensity light, which is extremely useful for improving the throughput of an exposure apparatus. However, since this high-intensity laser light is ultraviolet light, the characteristics of an optical system are low. It was found to deteriorate.
【０００４】即ち、光学系を構成する光学部品には、紫
外線を効率良く伝達するために反射防止膜或いは増反射
膜がコーティングされる必要があるが、これらの光学薄
膜が紫外線の照射による大気中のガスの化学反応によ
り、劣化するのである。That is, an optical component constituting an optical system needs to be coated with an anti-reflection film or an anti-reflection film in order to efficiently transmit ultraviolet rays. It is deteriorated by the chemical reaction of the gas.
【０００５】本発明の目的は、これらの光学部品の劣化
をなくすか十分に小さくすることにある。It is an object of the present invention to eliminate or sufficiently reduce the deterioration of these optical components.
【０００６】[0006]
【課題を解決するための手段】本発明の素子製造方法
は、光源と伝送光学系と照明光学系を有し、前記伝送光
学系を密封手段により密封し、前記密封手段と前記光源
の間及び前記密封手段と前記照明系の間は不活性ガスを
満たさないようにし且つ前記密封手段の内部を不活性ガ
スで満たした露光装置を配し、前記露光装置のステージ
上に基板を置き、前記光源からの紫外線を前記伝送光学
系と前記照明光学系を介して前記ステージ上の前記基板
に照射することを特徴としている。又、本発明の露光装
置は、光源、伝送光学系及び照明光学系を介して基板を
紫外線で露光する露光装置において、前記伝送光学系を
密封手段により密封し、前記密封手段と前記光源の間と
前記密封手段と前記照明光学系の間は不活性ガスを満た
さないようにし、且つ前記密封手段の内部を不活性ガス
で満たすことを特徴としている。According to the present invention, there is provided an element manufacturing method comprising a light source, a transmission optical system, and an illumination optical system.
The system is sealed by a sealing means, the sealing means and the light source
And an inert gas between the sealing means and the illumination system.
Not filled and the interior of the sealing means is inert gas.
The exposure apparatus filled with
Place the substrate on top and transmit the ultraviolet light from the light source to the transmission optics
The substrate on the stage via a system and the illumination optical system
Irradiation is performed. Further, the exposure apparatus of the present invention, a light source, an exposure apparatus which exposes a substrate with ultraviolet light through a transmitting optical system and the illumination optical system, the transmission optical system
Sealed by sealing means, between said illumination optical system and said sealing means between said said sealing means light source meets the inert gas
And the interior of the sealing means is filled with an inert gas.
【０００７】[0007]
【発明の実施の形態】図１は本発明の露光装置全体の構
成図である。Ａは露光光学系を有する露光装置本体を示
す。１はＫｒＦエキシマレーザであり、防振クッション
４上のレーザ定盤３上に設定されたＸＹθステージ２上
に固定されている。Ｂはレーザ１からの紫外線レーザ光
２０を露光装置本体の光学系へ伝送する伝送系であり、
図示されたミラー５を含む複数個の光学部品で構成され
ている。この伝送系の詳細は後述する。６は照明光学
系、９は半導体製造用の回路パターンが描かれたレチク
ル、９０はレチクルホルダ、１０はレチクル９の回路パ
ターンを投影する為の投影レンズ、１１はレンズ支持
台、１２はウェハ、１３はウェハ１２を吸着固定するチ
ャック、１４はＸＹステージ、１５はステッパー定盤、
１６は防振クッションである。FIG. 1 is a view showing the overall arrangement of an exposure apparatus according to the present invention. A indicates an exposure apparatus main body having an exposure optical system. Reference numeral 1 denotes a KrF excimer laser, which is fixed on an XYθ stage 2 set on a laser surface plate 3 on an anti-vibration cushion 4. B is a transmission system for transmitting the ultraviolet laser beam 20 from the laser 1 to the optical system of the exposure apparatus main body,
It is composed of a plurality of optical components including the illustrated mirror 5. Details of this transmission system will be described later. 6 is an illumination optical system, 9 is a reticle on which a circuit pattern for manufacturing a semiconductor is drawn, 90 is a reticle holder, 10 is a projection lens for projecting the circuit pattern of the reticle 9, 11 is a lens support, 12 is a wafer, 13 is a chuck for sucking and fixing the wafer 12, 14 is an XY stage, 15 is a stepper surface plate,
Reference numeral 16 denotes a vibration isolating cushion.
【０００８】エキシマレーザ１から射出したレーザ光２
０は、伝送系Ｂを通過して露光装置本体Ａの照明光学系
６に入射する。そして、照明光学系６でビーム径を拡大
された後、レチクル９、投影レンズ１０を経て、１２の
ウェハ上に到達する。A laser beam 2 emitted from an excimer laser 1
Numeral 0 passes through the transmission system B and enters the illumination optical system 6 of the exposure apparatus main body A. Then, after the beam diameter is expanded by the illumination optical system 6, the beam reaches the wafer 12 via the reticle 9 and the projection lens 10.
【０００９】照明光学系６と投影レンズ１０から成る露
光用光学系は、ステッパー定盤１５に固定されたレンズ
支持台１１によってすべて一体化されて固定されている
ため、露光装置本体Ａ内での各光学系の相対位置は実質
的に不変である。レチクル９上には前述のように回路パ
ターンが描かれており、レーザ光で、照明することによ
り、投影レンズ１０を介して１／５に縮小されてウェハ
１２上に転写される。The exposure optical system comprising the illumination optical system 6 and the projection lens 10 is all integrated and fixed by the lens support 11 fixed to the stepper base 15, so that the exposure optical system The relative position of each optical system is substantially unchanged. The circuit pattern is drawn on the reticle 9 as described above, and is illuminated with a laser beam, reduced to 1/5 via the projection lens 10 and transferred onto the wafer 12.
【００１０】ウェハ１２は、ウェハチャック１３上に真
空吸着されており、ウェハチャック１３は、ステッパー
定盤１５上に設けられた可動のＸＹステージ１４上に固
定されている。ウェハ１２をＸＹステージ１４により互
いに直交するＸおよびＹの２方向に搬送することがで
き、縮小されたパターンを、ウェハ上の任意の位置に転
写することができる。The wafer 12 is vacuum-sucked on a wafer chuck 13, and the wafer chuck 13 is fixed on a movable XY stage 14 provided on a stepper base 15. The wafer 12 can be transferred by the XY stage 14 in two directions of X and Y orthogonal to each other, and the reduced pattern can be transferred to an arbitrary position on the wafer.
【００１１】通常、ウェハ１２上には数十ショットの縮
小パターンが転写されるため、ＸＹステージ１４をＸま
たはＹ方向に移動させては、レーザ光を照射して転写を
するという動作をくり返し行うことになる。Normally, since a reduced pattern of several tens of shots is transferred onto the wafer 12, the operation of moving the XY stage 14 in the X or Y direction and irradiating a laser beam to perform the transfer is repeated. Will be.
【００１２】図２は伝送系Ｂの具体的な構成を示す断面
図である。図２において、１はレーザ、６は照明光学系
であり、図１のものと同一部材である。伝送系Ｂは、ミ
ラー５、プリズム７、レンズ８が光軸に沿って配列され
た伝送光学系とこの伝送光学系を密封するカバー３０と
ウィンドウ（窓）３１とから成り、カバー３０とウィン
ドウ３１で密封手段を構成する。伝送光学系の各光学部
品５，７，８は、反射防止膜（プリズム７，レンズ８）
や増反射膜（ミラー５，プリズム７）が表面に形成され
ており、これらの膜の作用でレーザ光の伝送効率を高め
ている。FIG. 2 is a sectional view showing a specific configuration of the transmission system B. In FIG. 2, reference numeral 1 denotes a laser, and 6 denotes an illumination optical system, which are the same members as those in FIG. The transmission system B includes a transmission optical system in which a mirror 5, a prism 7, and a lens 8 are arranged along the optical axis, a cover 30 for sealing the transmission optical system, and a window (window) 31, and the cover 30 and the window 31. Constitutes the sealing means. Each optical component 5, 7, 8 of the transmission optical system is an anti-reflection film (prism 7, lens 8)
A reflection enhancing film (mirror 5, prism 7) is formed on the surface, and the effect of these films enhances the transmission efficiency of laser light.
【００１３】カバー３０はアルミニウムなどの金属から
成り、その内面（伝送光学系側の面）は黒色アルマイト
を塗布することによりレーザ光を吸収できるようになっ
ている。また、伝送系Ｂの光入出射口には前述のように
ウィンドウ３１が設けられており、これにより伝送光学
系は大気から遮断される。ウィンドウ３１はレーザ光に
対して透明なガラス板で構成され、ここではＳｉＯ2か
ら成るガラス板を用いている。The cover 30 is made of metal such as aluminum, and its inner surface (the surface on the side of the transmission optical system) is coated with black alumite so that it can absorb laser light. Further, the window 31 is provided at the light input / output port of the transmission system B as described above, so that the transmission optical system is shielded from the atmosphere. The window 31 is formed of a glass plate that is transparent to laser light. Here, a glass plate made of SiO 2 is used.
【００１４】カバー３０とウィンドウ３１で形成される
空間中には、大気の代りにＮ2ガスが封入されており、
伝送系Ｂ周囲の大気圧より幾分高めの圧力を与えられて
いる。従って、伝送系Ｂ周囲から伝送系Ｂ内部の空間に
ガスが入り込むことはなく、ホコリやゴミなどの伝送系
Ｂ内部への進入を防止している。伝送系Ｂ内部の空間中
に封入するガスは、Ｎ2ガスの他にＡｒガスやＨｅガス
等の他の不活性ガスも使用できる。このような不活性ガ
スで伝送光学系の各光学部品５，７，８が包まれている
ので、たとえレーザ光により光学部品５，７，８が照射
されても、光学部品５，７，８にコーティングしてある
各種の光学薄膜が化学反応により劣化することがなく、
レーザ光を効率良く露光装置本体Ａまで伝送できる。In the space defined by the cover 30 and the window 31, N 2 gas is sealed instead of air.
The pressure is somewhat higher than the atmospheric pressure around the transmission system B. Accordingly, gas does not enter the space inside the transmission system B from around the transmission system B, thereby preventing dust and dirt from entering the inside of the transmission system B. As the gas sealed in the space inside the transmission system B, other inert gas such as Ar gas and He gas can be used in addition to N 2 gas. Since the optical components 5, 7, and 8 of the transmission optical system are wrapped with such an inert gas, even if the optical components 5, 7, and 8 are irradiated with laser light, the optical components 5, 7, and 8 are radiated. Various optical thin films coated on are not deteriorated by chemical reaction,
Laser light can be efficiently transmitted to the exposure apparatus main body A.
【００１５】図３は図１及び図２で示した伝送系Ｂの外
観図であり、伝送系Ｂのカバー３０にはガス供給口３５
とガス吹出口３７が取付けられている。ガス吹出口３７
はフィルタ３６と共にカバー３０の所定位置に設けられ
ており、フィルタ３６を介して伝送系Ｂ内部の空間中の
Ｎ2ガスを外部へ放出する。一方、ガス供給口３５はガ
ス導入管３９を介して不活性ガス供給装置３８とつなが
っており、装置３８からのＮ2ガスがガス供給口３５を
介して伝送系Ｂ内部へ送り込まれるのである。FIG. 3 is an external view of the transmission system B shown in FIG. 1 and FIG.
And a gas outlet 37 are attached. Gas outlet 37
Is provided at a predetermined position of the cover 30 together with the filter 36, and discharges the N 2 gas in the space inside the transmission system B to the outside via the filter 36. On the other hand, the gas supply port 35 is connected to an inert gas supply device 38 via a gas introduction pipe 39, and N 2 gas from the device 38 is fed into the transmission system B via the gas supply port 35.
【００１６】図３では簡単に図示してあるが、装置３８
には、Ｎ2ガスの温度・湿度・圧力を調整するための調
整装置が設けられており、これらの装置により、定温、
定湿、定圧のＮ2ガスを伝送系Ｂ内部の空間に送り込ん
でいる。従って、伝送系Ｂの内部の伝送光学系は常に一
定の環境下に置かれることになり、伝送系Ｂ周囲の大気
圧変動や温湿度の変動に関係なく、伝送光学系の光学特
性が一定に維持される。このため、照明光学系６へ同じ
状態（ビーム系、拡がり角等）のレーザ光を常に供給で
き、露光装置の性能を一定に維持できる。Although schematically shown in FIG. 3, the device 38
Is provided with an adjusting device for adjusting the temperature, humidity and pressure of N 2 gas.
The constant humidity, constant pressure N 2 gas is sent into the space inside the transmission system B. Therefore, the transmission optical system inside the transmission system B is always placed in a constant environment, and the optical characteristics of the transmission optical system are kept constant irrespective of fluctuations in the atmospheric pressure and temperature and humidity around the transmission system B. Will be maintained. Therefore, laser light in the same state (beam system, divergence angle, etc.) can always be supplied to the illumination optical system 6, and the performance of the exposure apparatus can be kept constant.
【００１７】また、レーザ光の一部が、伝送光学系の各
光学部品５，７，８で散乱されると、これによって生じ
た散乱光がカバー３０の内面の黒色アルマイトを照射
し、カバー３０の内面からゴミを発生する可能性がある
が、ここでは、Ｎ2ガスを伝送系Ｂ内部の空間中で循環
させた後フィルタ３６を介してガス吹出口３７からＮ2
ガスを放出しているため、これらのゴミをフィルタ３６
により吸着し、除去することができる。従って、伝送系
Ｂ内部の空間（雰囲気）を常に清浄な状態に保ち、伝送
光学系の光学性能を劣化させることがない。When a part of the laser light is scattered by the optical components 5, 7, and 8 of the transmission optical system, the scattered light irradiates the black alumite on the inner surface of the cover 30, and of it is likely to generate dust from the inner surface, where, N 2 gas through the filter 36 after being circulated in the transmission system B in the inner space from the gas outlet 37 N 2
Since gas is released, these dusts are removed from the filter 36.
Can be adsorbed and removed. Therefore, the space (atmosphere) inside the transmission system B is always kept clean, and the optical performance of the transmission optical system is not deteriorated.
【００１８】本実施例において、伝送系Ｂは露光装置本
体Ａに固定されている。従って、今までの説明では伝送
系Ｂ内部を大気から遮断する構成だけに関して言及した
が、伝送系Ｂに加えて本体Ａの照明光学系６に対しても
このような構成を採ることができる。照明光学系６は伝
送系Ｂからのレーザ光を受けてレーザ光の径（ビーム
径）を拡大してレチクル９に向けるものであるから、伝
送系Ｂと比較するとエネルギ密度が低いレーザ光を伝送
することになるが、大気から隔離して不活性ガス雰囲気
中に系を置くことは、照明光学系６の性能を維持するの
に極めて有効である。In this embodiment, the transmission system B is fixed to the exposure apparatus main body A. Therefore, in the description so far, only the configuration for shielding the inside of the transmission system B from the atmosphere has been described. However, such a configuration can be adopted for the illumination optical system 6 of the main body A in addition to the transmission system B. The illumination optical system 6 receives the laser light from the transmission system B and enlarges the diameter (beam diameter) of the laser light toward the reticle 9, so that the laser light having a lower energy density than the transmission system B is transmitted. However, placing the system in an inert gas atmosphere away from the atmosphere is extremely effective in maintaining the performance of the illumination optical system 6.
【００１９】図１に示した露光装置は、ステッパーと呼
ばれる投影型の露光装置であったが、本発明はこの種の
装置に限定されるものではない。従って、コンタクト方
式やプロキシミティ方式の露光装置、或いは光源として
ＫｒＦエキシマレーザ以外の光源を用いる露光装置や加
工装置等の各種機器に適用できる。Although the exposure apparatus shown in FIG. 1 is a projection type exposure apparatus called a stepper, the present invention is not limited to this type of apparatus. Therefore, the present invention can be applied to various devices such as a contact type or proximity type exposure apparatus, or an exposure apparatus or a processing apparatus using a light source other than a KrF excimer laser as a light source.
【００２０】[0020]
【発明の効果】以上、本発明によれば、不活性ガスを用
いて光学部品を大気から遮断するので、光学部品が劣化
することが殆どない。As described above, according to the present invention, the optical component is shielded from the atmosphere by using the inert gas, so that the optical component hardly deteriorates.
【図１】本発明の露光装置の全体構成を示す概略図。FIG. 1 is a schematic diagram showing the overall configuration of an exposure apparatus according to the present invention.
【図２】伝送系Ｂの構成を示す断面図。FIG. 2 is a sectional view showing a configuration of a transmission system B.
【図３】伝送系Ｂの外観を示す図。FIG. 3 is a diagram showing an appearance of a transmission system B.
Ａ 露光装置本体 Ｂ 伝送系 １ レーザ ３０ カバー ３１ 窓 ３８ 不活性ガス供給装置 Reference Signs List A Exposure device main body B Transmission system 1 Laser 30 Cover 31 Window 38 Inert gas supply device
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−133728（ＪＰ，Ａ) 特開 昭60−78456（ＪＰ，Ａ) 特開 昭57−45542（ＪＰ，Ａ) 特開 昭61−87124（ＪＰ，Ａ) 特開 昭55−143033（ＪＰ，Ａ) 特開 昭62−21222（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-60-133728 (JP, A) JP-A-60-78456 (JP, A) JP-A-57-45542 (JP, A) 87124 (JP, A) JP-A-55-143033 (JP, A) JP-A-62-21222 (JP, A)
Claims (6)
記伝送光学系を密封手段により密封し、前記密封手段と
前記光源の間及び前記密封手段と前記照明光学系の間は
不活性ガスを満たさないようにし且つ前記密封手段の内
部を不活性ガスで満たした露光装置を配し、前記露光装
置のステージ上に基板を置き、前記光源からの紫外線を
前記伝送光学系と前記照明光学系を介して前記ステージ
上の前記基板に照射することを特徴とする素子製造方
法。A light source, a transmission optical system, and an illumination optical system;
The transmission optical system is sealed by sealing means, and the sealing means and
Between the light source and between the sealing means and the illumination optical system
Do not fill with inert gas and do not
An exposure apparatus whose part is filled with an inert gas is provided.
The substrate is placed on the stage, and the ultraviolet light from the light source is
The stage via the transmission optical system and the illumination optical system
Irradiating the substrate on the substrate .
封し、前記第２の密封手段の内部を不活性ガスで満たす
ことを特徴とする請求項１に記載の素子製造方法。2. The illumination optical system is sealed by a second sealing means.
The method according to claim 1 , wherein the device is sealed and the inside of the second sealing means is filled with an inert gas .
基板を紫外線で露光する露光装置において、前記伝送光
学系を密封手段により密封し、前記密封手段と前記光源
の間と前記密封手段と前記照明光学系の間は不活性ガス
を満たさないようにし、且つ前記密封手段の内部を不活
性ガスで満たすことを特徴とする露光装置。 3. Via a light source, a transmission optical system and an illumination optical system.
An exposure apparatus for exposing a substrate to ultraviolet light, wherein the transmission light
The system is sealed by a sealing means, the sealing means and the light source
And an inert gas between the sealing means and the illumination optical system.
Is not satisfied, and the inside of the sealing means is inactive.
Exposure apparatus characterized by filling with an inert gas.
封し、前記第２の密封手段の内部を不活性ガスで満たす
ことを特徴とする請求項３に記載の露光装置。 4. The illumination optical system is sealed by a second sealing means.
Sealing and filling the inside of the second sealing means with an inert gas
The exposure apparatus according to claim 3, wherein:
を特徴とする請求項３に記載の露光装置。The exposure apparatus according to claim 3, wherein:
板を露光することを特徴とする請求項３に記載の露光装4. The exposure apparatus according to claim 3, wherein the plate is exposed.
置。Place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7180070A JP2644705B2 (en) | 1995-07-17 | 1995-07-17 | Device manufacturing method and exposure apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7180070A JP2644705B2 (en) | 1995-07-17 | 1995-07-17 | Device manufacturing method and exposure apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1031413A Division JP2783575B2 (en) | 1989-02-10 | 1989-02-10 | Exposure method and exposure apparatus for circuit manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0855792A JPH0855792A (en) | 1996-02-27 |
| JP2644705B2 true JP2644705B2 (en) | 1997-08-25 |
Family
ID=16076944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7180070A Expired - Lifetime JP2644705B2 (en) | 1995-07-17 | 1995-07-17 | Device manufacturing method and exposure apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2644705B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU7552498A (en) * | 1997-06-10 | 1998-12-30 | Nikon Corporation | Optical device, method of cleaning the same, projection aligner, and method of producing the same |
| DE19734715A1 (en) * | 1997-08-11 | 1999-02-25 | Lambda Physik Gmbh | Device for rinsing pathway of ultraviolet laser beam |
| US6529533B1 (en) | 1999-11-22 | 2003-03-04 | Lambda Physik Ag | Beam parameter monitoring unit for a molecular fluorine (F2) laser |
| US6795456B2 (en) | 1999-12-20 | 2004-09-21 | Lambda Physik Ag | 157 nm laser system and method for multi-layer semiconductor failure analysis |
| KR100449755B1 (en) * | 2001-10-19 | 2004-09-22 | 삼성에스디아이 주식회사 | Secondary battery |
| JP2006195166A (en) * | 2005-01-13 | 2006-07-27 | Fuji Photo Film Co Ltd | Image exposing device and microlens array unit |
| KR100843765B1 (en) * | 2006-12-15 | 2008-07-04 | 홍운식 | System for calcurating transmission utility factor value of photo energy for exposure and method for calculating transmission utility factor value of photo energy utilizing the caculation system |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2455298A1 (en) * | 1979-04-23 | 1980-11-21 | Thomson Csf | ILLUMINATOR DEVICE FOR PROVIDING A DIVERGING ILLUMINATION BEAM FROM A PREDETERMINED AREA OF A PLAN AND PATTERN TRANSFER SYSTEM COMPRISING SUCH A DEVICE |
| JPS5745542A (en) * | 1980-09-02 | 1982-03-15 | Mitsubishi Electric Corp | Method for construction of pattern |
| JPS6078456A (en) * | 1983-10-05 | 1985-05-04 | Nippon Kogaku Kk <Nikon> | Projecting and exposing device |
| JPS60133728A (en) * | 1983-12-21 | 1985-07-16 | Seiko Epson Corp | Far ultraviolet ray projecting exposure device |
| US4616908A (en) * | 1984-07-19 | 1986-10-14 | Gca Corporation | Microlithographic system |
| JPS6221222A (en) * | 1985-07-19 | 1987-01-29 | Matsushita Electric Ind Co Ltd | Light-exposing device |
-
1995
- 1995-07-17 JP JP7180070A patent/JP2644705B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0855792A (en) | 1996-02-27 |
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