JPS5745542A - Method for construction of pattern - Google Patents
Method for construction of patternInfo
- Publication number
- JPS5745542A JPS5745542A JP12205480A JP12205480A JPS5745542A JP S5745542 A JPS5745542 A JP S5745542A JP 12205480 A JP12205480 A JP 12205480A JP 12205480 A JP12205480 A JP 12205480A JP S5745542 A JPS5745542 A JP S5745542A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- inert atmosphere
- cassette
- patterns
- construction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a photomask of good accuracy by constructing patterns for a photomask using photoresist in an inert atmosphere. CONSTITUTION:After the inside of a sealed vessel 10 is evacuated to a vacuum through a vacuum exhausting valve 11, gaseous N2 is sucked through an N2 purging valve 12, whereby an inert atmosphere is created therein. The cassette 7 on the supply side of an automatic carry-in and out device, a photomask 4 using the emulsion in this cassette 7, a passage 9 for the photomask 4, a movable stage 6, the photomask 4 on the stage 6, a cassette 8 on the receiving side, and the photomask 4 in this cassette 8 exist in the inert atmosphere, and therefore, the construction of patterns is accomplished in the inert atmosphere. Since the working atmosphere is an inert atmosphere, the reaction by which the sensitivity specks produced in exposure parts are changed to silver halide is suppressed, and the degradation in dimensional accuracy owing to insufficient density after development is obviated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12205480A JPS5745542A (en) | 1980-09-02 | 1980-09-02 | Method for construction of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12205480A JPS5745542A (en) | 1980-09-02 | 1980-09-02 | Method for construction of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5745542A true JPS5745542A (en) | 1982-03-15 |
Family
ID=14826466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12205480A Pending JPS5745542A (en) | 1980-09-02 | 1980-09-02 | Method for construction of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5745542A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0855792A (en) * | 1995-07-17 | 1996-02-27 | Canon Inc | Element formation method |
-
1980
- 1980-09-02 JP JP12205480A patent/JPS5745542A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0855792A (en) * | 1995-07-17 | 1996-02-27 | Canon Inc | Element formation method |
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