JP2546530B2 - Ｌｏｃ構造半導体装置 - Google Patents

Ｌｏｃ構造半導体装置

Info

Publication number
JP2546530B2
JP2546530B2 JP5348277A JP34827793A JP2546530B2 JP 2546530 B2 JP2546530 B2 JP 2546530B2 JP 5348277 A JP5348277 A JP 5348277A JP 34827793 A JP34827793 A JP 34827793A JP 2546530 B2 JP2546530 B2 JP 2546530B2
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor chip
lead
insulating tape
loc structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5348277A
Other languages
English (en)
Other versions
JPH07193092A (ja
Inventor
智恒 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5348277A priority Critical patent/JP2546530B2/ja
Priority to GB9422410A priority patent/GB2285171A/en
Priority to KR1019940033222A priority patent/KR950021289A/ko
Publication of JPH07193092A publication Critical patent/JPH07193092A/ja
Application granted granted Critical
Publication of JP2546530B2 publication Critical patent/JP2546530B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明はリードに絶縁テープを利
用して半導体チップを搭載したＬＯＣ（リード・オン・
チップ）構造の半導体装置に関し、特にリードと半導体
チップとを電気接続する金属細線のボンディング性を改
善した半導体装置に関する。
【０００２】
【従来の技術】この種の半導体装置の一例を図３に示
す。導電金属板で形成された複数本のリード１１はＬ字
状に曲げ形成され、そのインナーリード部１１ａの下面
にはポリイミドテープ１２ａの両面に熱硬化性接着剤１
２ｃを塗布した絶縁テープ（ポリイミドテープ）１２に
より半導体チップ１３が接着されている。また、インナ
ーリード部１１ａと半導体チップ１３の電極パッド１３
ａとは金属細線１４で電気接続される。そして、リード
のアウターリード部１１ｂを除く領域をエポキシ系樹脂
１５により封止する。
【０００３】なお、絶縁テープ１２により半導体チップ
１３をインナーリード部１１ａに接着する際には、予め
絶縁テープ１２をインナーリード部１１ａの下面に接着
しておき、その後に半導体チップ１３を絶縁テープ１２
の下面に接着させる。このとき、熱硬化性接着剤１２ｃ
を硬化させるために、通常では１５０℃、１．５時間程
度のベーク（熱処理）を行っている。
【０００４】
【発明が解決しようとする課題】このような半導体装置
では、熱硬化性接着剤１２ｃを硬化させるためのベーク
工程において、熱硬化性接着剤１２ｃ中に含まれるカー
ボン等の有機成分が飛散され、これがインナーリード部
１１ａのＡｇメッキ面に付着し、金属細線１４をＡｇメ
ッキ面に接続する際のボンディングの信頼性が低下され
る。このため、次工程の樹脂封止時に、金属細線１４の
接続外れ等の事故が生じ易くなり、半導体装置全体の信
頼性が低下されるという問題がある。
【０００５】このため、熱硬化性接着剤に代えて熱可塑
性接着剤を使用することが考えられる。例えば、特開平
３−１４８１３９号公報では、その１つの例として、絶
縁テープの半導体チップ側を熱可塑性接着剤としたもの
が提案されている。この公報記載の技術は、専ら半導体
チップをリードに固定する際の位置決めの容易化を図っ
たものであり、本来は前記した問題を解決するためのも
のではないが、それでも絶縁テープの両面の熱硬化性接
着剤の一方のみを熱可塑性接着剤で構成することで、ベ
ーク時における有機成分の飛散を抑制することは期待で
きる。
【０００６】しかしながら、本発明者がこの公報記載の
ものについて検討を加えたところ、全体としてカーボン
の飛散は抑制できるものの、インナーリードのＡｇ面に
付着する有機成分（カーボン）量は図３のものと大差は
なく、依然として金属細線のボンディング性を改善する
ものではないことが確認された。本発明の目的は、この
ようなリードにおける有機成分の付着を抑制して信頼性
の高いボンディング性を得ることを可能にしたＬＯＣ構
造半導体装置を提供することにある。
【０００７】
【課題を解決するための手段】本発明は、リードに半導
体チップを搭載する絶縁テープには、リード側の面に熱
可塑性接着剤を有し、半導体チップ側の面に熱硬化性接
着剤を有する構成とする。この半導体装置は、半導体チ
ップの電極パッドと、リードのＡｇメッキ面とを金属細
線で電気接続し、またリードのインナーリード、絶縁テ
ープ、半導体チップ、および金属細線を樹脂で封止する
構成とする。また、絶縁テープはポリイミドテープで構
成され、その片面に熱可塑性接着剤を有し、他方の面に
熱硬化性接着剤を有する構成とされる。
【０００８】
【作用】この構成によれば、絶縁テープにより半導体チ
ップをリードに接着固定する際の熱処理時に、絶縁テー
プの熱硬化性接着剤中の有機成分の飛散を抑制し、かつ
この有機成分がリード面に付着されることを抑制し、金
属細線とリードとのボンディング性を改善し、接続不良
の発生を未然に防止する。
【０００９】
【実施例】次に、本発明について図面を参照して説明す
る。図１は本発明の一実施例の断面図、図２は要部の斜
視図である。これらの図において、複数本のリードフレ
ーム１は金属板を加工してその表面にＡｇをメッキして
構成とされており、そのインナーリード部１ａを略水平
方向に向け、アウターリード部１ｂを略垂直に向けたＬ
字状に形成されている。そして、インナーリード部１ａ
の下面には絶縁テープ２を接着し、さらにこの絶縁テー
プ２の下面には半導体素子や電極パッドが形成された半
導体チップ３をその表面を上に向けて接着固定されてい
る。また、インナーリード部１ａと半導体チップ３の電
極パッド３ａには金属細線４がボンディングされ、この
金属細線４により両者の電気接続が行われている。その
上で、前記アウターリード部１ｂを除く全体がエポキシ
系樹脂５により封止され、樹脂封止型半導体装置が構成
されている。
【００１０】前記絶縁テープ２はポリイミドテープ２ａ
を主体に構成されており、その上面のインナーリード側
に熱可塑性接着剤２ｂが設けられ、下面の半導体チップ
側に熱硬化性接着剤２ｃが設けられている。そして、い
ずれも熱処理を行うことで絶縁テープ２をインナーリー
ド部１ａと半導体チップ３にそれぞれ接着し、この絶縁
テープ２を介して半導体チップ３をインナーリード部１
ａに接着した構成とされている。
【００１１】このように、インナーリード側に熱可塑性
接着剤２ｂを用い、半導体チップ側に熱硬化性接着剤２
ｃを用いた絶縁テープ２により図１の半導体装置を構成
した場合、本発明者の実験によれば、インナーリード部
１ａのＡｇメッキ面に付着される有機成分（カーポン）
の量が低減されていることが確認できた。即ち、前記公
報に記載されたものとこの実施例のものとを試料として
表面分析（ＡＥＳ分析）を行ったところ、この実施例の
ものではＡｇメッキ面のＣ（カーポン）とＡｇのピーク
強度比Ｃ／Ａｇは０．５であった。これに対し公報に記
載されたものは２．２であり、この実施例のものではカ
ーボンの付着が格段に改善されていることが確認され
た。
【００１２】この理由については明確にはされていない
が、本発明者の推測によれば、この実施例のものでは熱
硬化性接着剤２ｃが絶縁テープ２のポリイミドテープ２
ａと半導体チップ３の表面との間に挟まれて閉塞された
状態にあるため、有機成分の飛散が抑制されてものと考
えられる。一方、公報に記載のものは、リード側に設け
られた熱硬化性接着剤の上面が開放されているため、有
機成分がこの開放面から飛散されてＡｇ面に付着したも
のと考えられる。したがって、この実施例では、金属細
線４をインナーリード部１ａのＡｇ面にボンディングし
たときの信頼性が改善されることになり、本発明者によ
る所定数標本の試験の結果では、その不良率を従来（図
３や公報記載のもの）の０．２（％）から０（％）に低
減でき、不良の発生を確実に防止することが可能とされ
ている。
【００１３】
【発明の効果】以上説明したように本発明は、リードに
半導体チップを搭載する絶縁テープは、リード側の面に
熱可塑性接着剤を有し、半導体チップ側の面に熱硬化性
接着剤を有しているので、半導体チップをリードに搭載
する際の熱処理における熱硬化性接着剤からの有機成分
の飛散を抑制し、これがリード面に付着することを抑制
し、金属細線のボンディング性を改善し、半導体装置の
信頼性を改善することができる効果がある。
【図面の簡単な説明】
【図１】本発明のＬＯＣ構造半導体装置の一実施例の断
面図である。
【図２】図１の半導体装置の一部の斜視図である。
【図３】従来のＬＯＣ構造半導体装置の一例の断面図で
ある。
【符号の説明】
１ リードフレーム １ａ インナーリード部 ２ 絶縁テープ ２ａ ポリイミドテープ ２ｂ 熱可塑性接着剤 ２ｃ 熱硬化性接着剤 ３ 半導体チップ ４ 金属細線 ５ エポキシ樹脂

Claims (4)

    (57)【特許請求の範囲】
  1. 【請求項１】 リードに絶縁テープを介して半導体チッ
    プを搭載するＬＯＣ構造の半導体装置において、前記絶
    縁テープはリード側の面に熱可塑性接着剤を有し、半導
    体チップ側の面に熱硬化性接着剤を有することを特徴と
    するＬＯＣ構造半導体装置。
  2. 【請求項２】 半導体チップの電極パッドと、リードの
    Ａｇメッキ面とを金属細線で電気接続してなる請求項１
    のＬＯＣ構造半導体装置。
  3. 【請求項３】 リードのインナーリード、絶縁テープ、
    半導体チップ、および金属細線を樹脂で封止してなる請
    求項１または２のＬＯＣ構造半導体装置。
  4. 【請求項４】 絶縁テープはポリイミドテープで構成さ
    れ、その片面に熱可塑性接着剤を有し、他方の面に熱硬
    化性接着剤を有する請求項１ないし３のいずれかのＬＯ
    Ｃ構造半導体装置。
JP5348277A 1993-12-24 1993-12-24 Ｌｏｃ構造半導体装置 Expired - Fee Related JP2546530B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5348277A JP2546530B2 (ja) 1993-12-24 1993-12-24 Ｌｏｃ構造半導体装置
GB9422410A GB2285171A (en) 1993-12-24 1994-11-07 Lead-on-chip semiconductor device
KR1019940033222A KR950021289A (ko) 1993-12-24 1994-12-08 리드 온 칩(loc) 구조 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5348277A JP2546530B2 (ja) 1993-12-24 1993-12-24 Ｌｏｃ構造半導体装置

Publications (2)

Publication Number Publication Date
JPH07193092A JPH07193092A (ja) 1995-07-28
JP2546530B2 true JP2546530B2 (ja) 1996-10-23

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Application Number Title Priority Date Filing Date
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Country Status (3)

Country Link
JP (1) JP2546530B2 (ja)
KR (1) KR950021289A (ja)
GB (1) GB2285171A (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010096115A (ko) * 2000-04-17 2001-11-07 이형도 편향요크

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01116465U (ja) * 1988-01-30 1989-08-07
JP2518569B2 (ja) * 1991-09-19 1996-07-24 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
KR950021289A (ko) 1995-07-26
GB2285171A (en) 1995-06-28
GB9422410D0 (en) 1995-01-04
JPH07193092A (ja) 1995-07-28

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