JP2022528073A - ハイブリッドウェハ接合方法およびその構造 - Google Patents
ハイブリッドウェハ接合方法およびその構造 Download PDFInfo
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- JP2022528073A JP2022528073A JP2021557438A JP2021557438A JP2022528073A JP 2022528073 A JP2022528073 A JP 2022528073A JP 2021557438 A JP2021557438 A JP 2021557438A JP 2021557438 A JP2021557438 A JP 2021557438A JP 2022528073 A JP2022528073 A JP 2022528073A
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000005304 joining Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 178
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 229910052751 metal Inorganic materials 0.000 claims abstract description 86
- 239000002184 metal Substances 0.000 claims abstract description 86
- 239000012535 impurity Substances 0.000 claims abstract description 63
- 230000004888 barrier function Effects 0.000 claims description 119
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 86
- 229910052802 copper Inorganic materials 0.000 claims description 86
- 239000010949 copper Substances 0.000 claims description 86
- 239000012528 membrane Substances 0.000 claims description 55
- 230000008569 process Effects 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 229910052748 manganese Inorganic materials 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 13
- 238000005275 alloying Methods 0.000 claims description 11
- 229910004166 TaN Inorganic materials 0.000 claims description 9
- 229910008482 TiSiN Inorganic materials 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 18
- 239000003989 dielectric material Substances 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000011148 porous material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 3
- 235000013405 beer Nutrition 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical compound [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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Abstract
Description
Claims (20)
- ハイブリッドウェハ接合方法であって、
第1の半導体構造を提供することであって、
前記第1の半導体構造は、第1の基板と、前記第1の基板上に形成されている第1の誘電体層と、前記第1の誘電体層内にかつ前記第1の基板上に形成されている第1のビア構造とを含み、
前記第1のビア構造は、第1のコンタクトビアと、前記第1のコンタクトビア内にドープされている第1の金属不純物とを含み、
前記第1のコンタクトビアは、第1のコンタクトビア表面を有する、第1の半導体構造を提供することと、
第2の半導体構造を提供することであって、
前記第2の半導体構造は、第2の基板と、前記第2の基板上に形成されている第2の誘電体層と、前記第2の誘電体層内にかつ前記第2の基板上に形成されている第2のビア構造とを含み、
前記第2のビア構造は、第2のコンタクトビアと、前記第2のコンタクトビア内にドープされている第2の金属不純物とを含み、
前記第2のコンタクトビアは、第2のコンタクトビア表面を有する、第2の半導体構造を提供することと、
前記第2のコンタクトビア表面に前記第1のコンタクトビア表面を付着させることによって、前記第2の半導体構造に前記第1の半導体構造を接合することであって、前記第2のコンタクトビア表面および前記第1のコンタクトビア表面が異なる表面積を有し、重なり合った界面を有する、前記第1の半導体構造を接合することと、
前記第1の半導体構造と前記第2の半導体構造との間の合金化プロセスによって、前記第1のコンタクトビア表面および前記第2のコンタクトビア表面のうちの1つまたは複数の重なり合わない表面上に自己バリア層を形成することであって、前記自己バリア層が前記第1の金属不純物および前記第2の金属不純物に対応する多成分酸化物によって形成される、自己バリア層を形成することとを含む、
方法。 - 前記合金化プロセスは、約350℃の温度において前記第1の半導体構造および前記第2の半導体構造をアニーリングすることを含む、
請求項1に記載の方法。 - 前記第1の半導体構造および前記第2の半導体構造は、約120分にわたって約350℃の温度に維持される、
請求項2に記載の方法。 - 前記第1の金属不純物は、Al、MnまたはAgのうちの少なくとも1つを含み、
前記第1の誘電体層および前記第2の誘電体層の各々は、酸化ケイ素を含み、
前記多成分酸化物は、Si、O、およびAl、Mn、またはAgのうちの少なくとも1つを含む、
請求項1に記載の方法。 - 前記多成分酸化物は、酸化ケイ素アルミニウムである、
請求項4に記載の方法。 - 前記第1のコンタクトビア表面および前記第2のコンタクトビア表面のうちの前記1つまたは複数の前記重なり合わない表面上に形成される前記自己バリア層は、前記第1の半導体構造と前記第2の半導体構造との間の接合界面にある、
請求項1に記載の方法。 - 前記第2のコンタクトビア表面および前記第1のコンタクトビア表面のうちの一方の前記接合界面に対する正射影は、前記第2のコンタクトビア表面および前記第1のコンタクトビア表面のうちのもう一方の正射影を完全に覆う、
請求項6に記載の方法。 - 前記第1の基板と前記第1の誘電体層との間にバリア膜が形成され、
前記バリア膜は、窒化ケイ素または窒素ドープ炭化ケイ素を含む、
請求項1に記載の方法。 - 前記第1の半導体構造を提供することは、
前記第1の基板を提供することと、
前記第1の基板上に前記第1の誘電体層を形成することと、
前記第1の誘電体層内にコンタクトホールを形成することであって、前記コンタクトホールは、前記第1の基板上に形成されている第1の溝と、前記第1の溝に接続されており、前記第1の溝上にある第1のトレンチとを含む、コンタクトホールを形成することと、
前記コンタクトホールの内面上のバリア層および前記バリア層上のシード層を形成することと、
前記第1のビア構造を形成するために前記コンタクトホール内の前記シード層上に銅および前記第1の金属不純物を充填することであって、前記第1のビア構造は、前記第1の溝内に形成されている第1のスイッチ素子と、前記トレンチ内かつ前記第1のスイッチ素子上の第1のコンタクトビアとを含む、前記銅および前記第1の金属不純物を充填することとを含む、
請求項1に記載の方法。 - 前記第1の半導体構造は、前記第1の基板内の導電層をさらに備え、
前記第1のスイッチ素子は、前記導電層上に形成され、
前記第1の基板に対する前記第1のコンタクトビアの正射影は、前記第1の基板に対する前記第1のスイッチ素子の正射影よりも大きい、
請求項9に記載の方法。 - 前記コンタクトホールの前記内面上の前記バリア層は、Ti、Ta、TiN、TaN、TiSiN、または前記の任意の組み合わせを含む、
請求項10に記載の方法。 - ハイブリッドウェハ接合構造であって、
第1の半導体構造であって、
第1の基板と、前記第1の基板上に形成されている第1の誘電体層と、前記第1の誘電体層内にかつ前記第1の基板上に形成されている第1のビア構造とを含み、
前記第1のコンタクトビアは、第1のコンタクトビア表面を有する、第1の半導体構造と、
第2の半導体構造であって、
第2の基板と、前記第2の基板上に形成されている第2の誘電体層と、前記第2の誘電体層内にかつ前記第2の基板上に形成されている第2のビア構造とを含み、
前記第2のコンタクトビアは、第2のコンタクトビア表面を有する、第2の半導体構造とを備え、
前記第1の半導体構造は、前記第2の半導体構造に接合されており、
前記第1のコンタクトビア表面は、前記第2のコンタクトビア表面に付着されており、
前記第2のコンタクトビア表面および前記第1のコンタクトビア表面は、異なる表面積を有し、重なり合った表面を有し、
前記ハイブリッドウェハ接合構造は、前記第1の半導体構造と前記第2の半導体構造との間の接合界面において前記第1のコンタクトビア表面および前記第2のコンタクトビア表面のうちの1つまたは複数の重なり合わない表面上に形成されている自己バリア層であって、前記自己バリア層は多成分酸化物を含む、自己バリア層を備える、
ハイブリッドウェハ接合構造。 - 前記第1の誘電体層および前記第2の誘電体層の各々は、酸化ケイ素を含み、
前記多成分酸化物は、Si、O、およびAl、Mn、またはAgのうちの少なくとも1つを含む、
請求項12に記載の構造。 - 前記多成分酸化物は、酸化ケイ素アルミニウムである、
請求項13に記載の構造。 - 前記第2のコンタクトビア表面および前記第1のコンタクトビア表面のうちの一方の前記接合界面に対する正射影は、前記第2のコンタクトビア表面および前記第1のコンタクトビア表面のうちのもう一方の正射影を完全に覆う、
請求項12に記載の構造。 - 前記第1の基板と前記第1の誘電体層との間にバリア膜が形成され、
前記バリア膜は、窒化ケイ素または窒素ドープ炭化ケイ素を含む、
請求項12に記載の構造。 - 前記第1の誘電体層内のコンタクトホールが、前記第1の基板上の第1の溝と、前記第1の溝に接続されており、前記第1の溝上にある第1のトレンチとを含み、
バリア層が、前記コンタクトホールの内面上にあり、
シード層が、前記バリア層上にあり、
銅および前記第1の金属不純物が、前記第1のビア構造を形成するために前記コンタクトホール内の前記シード層の上にあり、前記第1のビア構造は、前記第1の溝内の第1のスイッチ素子と、前記第1のスイッチ素子上の第1のコンタクトビアとを含む、
請求項12に記載の構造。 - 前記第1の半導体構造は、前記第1の基板内の導電層をさらに備え、
前記第1のスイッチ素子は、前記導電層上に形成され、
前記第1の基板に対する前記第1のビアの正射影は、前記第1の基板に対する前記第1のスイッチ素子の正射影よりも大きい、
請求項17に記載の構造。 - 前記第1の半導体構造は、前記第1の基板内に絶縁層をさらに備え、
前記導電層は、前記絶縁層によって囲まれている、
請求項18に記載の構造。 - 前記コンタクトホールの前記内面上の前記バリア層は、Ti、Ta、TiN、TaN、TiSiN、または前記の任意の組み合わせを含む、
請求項17に記載の構造。
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