JP2022012282A - 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 - Google Patents
半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 Download PDFInfo
- Publication number
- JP2022012282A JP2022012282A JP2020114003A JP2020114003A JP2022012282A JP 2022012282 A JP2022012282 A JP 2022012282A JP 2020114003 A JP2020114003 A JP 2020114003A JP 2020114003 A JP2020114003 A JP 2020114003A JP 2022012282 A JP2022012282 A JP 2022012282A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- semiconductor device
- nitrogen
- region
- carbide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 59
- 230000003028 elevating effect Effects 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 217
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 195
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 191
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 155
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 146
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 134
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 75
- 238000009826 distribution Methods 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims description 106
- 238000000034 method Methods 0.000 claims description 61
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 54
- 238000005468 ion implantation Methods 0.000 claims description 52
- 229910052782 aluminium Inorganic materials 0.000 claims description 40
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000001773 deep-level transient spectroscopy Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract description 2
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 abstract 1
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 251
- 239000012535 impurity Substances 0.000 description 41
- 230000007547 defect Effects 0.000 description 32
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 30
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 23
- 239000000463 material Substances 0.000 description 22
- 230000003647 oxidation Effects 0.000 description 19
- 238000007254 oxidation reaction Methods 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 230000007423 decrease Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 13
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- 239000011148 porous material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- -1 aluminum ion Chemical class 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000004913 activation Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 150000001721 carbon Chemical group 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000001272 nitrous oxide Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 229910005487 Ni2Si Inorganic materials 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011866 long-term treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60K—ARRANGEMENT OR MOUNTING OF PROPULSION UNITS OR OF TRANSMISSIONS IN VEHICLES; ARRANGEMENT OR MOUNTING OF PLURAL DIVERSE PRIME-MOVERS IN VEHICLES; AUXILIARY DRIVES FOR VEHICLES; INSTRUMENTATION OR DASHBOARDS FOR VEHICLES; ARRANGEMENTS IN CONNECTION WITH COOLING, AIR INTAKE, GAS EXHAUST OR FUEL SUPPLY OF PROPULSION UNITS IN VEHICLES
- B60K1/00—Arrangement or mounting of electrical propulsion units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L53/00—Methods of charging batteries, specially adapted for electric vehicles; Charging stations or on-board charging equipment therefor; Exchange of energy storage elements in electric vehicles
- B60L53/20—Methods of charging batteries, specially adapted for electric vehicles; Charging stations or on-board charging equipment therefor; Exchange of energy storage elements in electric vehicles characterised by converters located in the vehicle
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B61—RAILWAYS
- B61C—LOCOMOTIVES; MOTOR RAILCARS
- B61C17/00—Arrangement or disposition of parts; Details or accessories not otherwise provided for; Use of control gear and control systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B61—RAILWAYS
- B61C—LOCOMOTIVES; MOTOR RAILCARS
- B61C3/00—Electric locomotives or railcars
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B66—HOISTING; LIFTING; HAULING
- B66B—ELEVATORS; ESCALATORS OR MOVING WALKWAYS
- B66B11/00—Main component parts of lifts in, or associated with, buildings or other structures
- B66B11/04—Driving gear ; Details thereof, e.g. seals
- B66B11/043—Driving gear ; Details thereof, e.g. seals actuated by rotating motor; Details, e.g. ventilation
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】実施形態の半導体装置は、炭化珪素層と、ゲート電極と、炭化珪素層とゲート電極との間の酸化シリコン層と、炭化珪素層と酸化シリコン層との間に位置し、窒素の濃度が1×1021cm-3以上の領域と、を備え、炭化珪素層、酸化シリコン層、及び、領域の中の窒素の濃度分布が、領域にピークを有し、酸化シリコン層と、酸化シリコン層から炭化珪素層の側に100nm離れた第1の位置との間の部分において、DLTSにより測定されるZ1/2準位密度が1×1011cm-3以下であり、ピークから酸化シリコン層の側に1nm離れた第2の位置における窒素の濃度が1×1018cm-3以下であり、第2の位置における炭素の濃度が1×1018cm-3以下であり、ピークから炭化珪素層の側に1nm離れた第3の位置における窒素の濃度が1×1018cm-3以下である。
【選択図】図1
Description
第1の実施形態の半導体装置は、炭化珪素層と、ゲート電極と、炭化珪素層とゲート電極との間の酸化シリコン層と、炭化珪素層と酸化シリコン層との間に位置し、窒素の濃度が1×1021cm-3以上の領域と、を備え、炭化珪素層、酸化シリコン層、及び、領域の中の窒素の濃度分布が、領域にピークを有し、ピークから酸化シリコン層の側に1nm離れた第1の位置における窒素の濃度が1×1018cm-3以下であり、第1の位置における炭素の濃度が1×1018cm-3以下であり、ピークから炭化珪素層の側に1nm離れた第2の位置における窒素の濃度が1×1018cm-3以下であり、酸化シリコン層と、酸化シリコン層から炭化珪素層の側に100nm離れた第3の位置との間の部分において、Deep Level Transient Spectroscopy(DLTS)により測定されるZ1/2準位密度が1×1011cm-3以下である。
第2の実施形態の半導体装置の製造方法は、酸化シリコン膜の形成前に、窒素を含む雰囲気中での第2の熱処理を行う点で、第1の実施形態の半導体装置の製造方法と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第3の実施形態の半導体装置は、トレンチ内にゲート電極を備えるトレンチゲート型のMOSFETである点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第4の実施形態のインバータ回路及び駆動装置は、第1の実施形態の半導体装置を備えるインバータ回路及び駆動装置である。
第5の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第6の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第7の実施形態の昇降機は、第1の実施形態の半導体装置を備える昇降機である。
14 ドリフト領域(第1の炭化珪素領域)
16 pウェル領域(第2の炭化珪素領域)
16a チャネル部分(部分)
28 ゲート絶縁層(酸化シリコン層)
30 ゲート電極
40 界面終端領域(領域)
54 炭素膜
55 酸化シリコン膜
100 MOSFET(半導体装置)
150 インバータ回路
200 MOSFET(半導体装置)
300 MOSFET(半導体装置)
700 駆動装置
800 車両
900 車両
1000 昇降機
Rp1 第1のプロジェクテッドレンジ
Rp2 第2のプロジェクテッドレンジ
X1 第1の位置
X2 第2の位置
X3 第3の位置
X4 第4の位置
X5 第5の位置
Claims (20)
- 炭化珪素層と、
ゲート電極と、
前記炭化珪素層と前記ゲート電極との間の酸化シリコン層と、
前記炭化珪素層と前記酸化シリコン層との間に位置し、窒素の濃度が1×1021cm-3以上の領域と、を備え、
前記炭化珪素層、前記酸化シリコン層、及び、前記領域の中の窒素の濃度分布が、前記領域にピークを有し、
前記酸化シリコン層と、前記酸化シリコン層から前記炭化珪素層の側に100nm離れた第1の位置との間の部分において、Deep Level Transient Spectroscopy(DLTS)により測定されるZ1/2準位密度が1×1011cm-3以下であり、
前記ピークから前記酸化シリコン層の側に1nm離れた第2の位置における窒素の濃度が1×1018cm-3以下であり、前記第2の位置における炭素の濃度が1×1018cm-3以下であり、
前記ピークから前記炭化珪素層の側に1nm離れた第3の位置における窒素の濃度が1×1018cm-3以下である半導体装置。 - 前記ピークの窒素の濃度は1×1022cm-3以上である請求項1記載の半導体装置。
- 前記炭化珪素層は、n型の第1の炭化珪素領域と、前記第1の炭化珪素領域と前記酸化シリコン層との間に位置するp型の第2の炭化珪素領域と、を含み、
前記部分は、前記第2の炭化珪素領域の中に位置する請求項1又は請求項2記載の半導体装置。 - 前記部分の電子のホール移動度は、200cm2/V・s以上である請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記酸化シリコン層から前記炭化珪素層の側に5nm離れた第4の位置における4個のシリコン原子と結合する窒素原子の量は、前記酸化シリコン層から前記炭化珪素層の側に5μm離れた第5の位置における4個のシリコン原子と結合する窒素原子の量の80%以上120%以下である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 請求項1ないし請求項5いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1ないし請求項5いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1ないし請求項5いずれか一項記載の半導体装置を備える車両。
- 請求項1ないし請求項5いずれか一項記載の半導体装置を備える昇降機。
- 炭化珪素層にアルミニウム(Al)を第1のプロジェクテッドレンジ及び第1のドーズ量で注入する第1のイオン注入を行い、
前記炭化珪素層に炭素(C)を第2のプロジェクテッドレンジ及び前記第1のドーズ量の10倍以上のドーズ量である第2のドーズ量で注入する第2のイオン注入を行い、
1600℃以上の第1の熱処理を行い、
前記炭化珪素層の上に酸化シリコン膜を形成し、
前記酸化シリコン膜の上にゲート電極を形成する半導体装置の製造方法。 - 前記酸化シリコン膜の形成前又は形成後に、窒素を含む雰囲気の中での第2の熱処理を行う請求項10記載の半導体装置の製造方法。
- 前記雰囲気は、アンモニアガスを含む第1の雰囲気、窒素ガスと水素ガスとを含む第2の雰囲気、及び、窒素ガスと二酸化炭素ガスとを含む第3の雰囲気からなる群から選ばれる少なくとも一つの雰囲気である請求項11記載の半導体装置の製造方法。
- 前記第1のドーズ量は1×1014cm-2以下である請求項10ないし請求項12いずれか一項記載の半導体装置の製造方法。
- 前記第2のドーズ量は1×1015cm-2以上である請求項10ないし請求項13いずれか一項記載の半導体装置の製造方法。
- 前記第1のプロジェクテッドレンジ及び前記第2のプロジェクテッドレンジは、0.6μm以下である請求項10ないし請求項14いずれか一項記載の半導体装置の製造方法。
- 前記第2のプロジェクテッドレンジは、前記第1のプロジェクテッドレンジの80%以上120%以下である請求項10ないし請求項15いずれか一項記載の半導体装置の製造方法。
- 前記第1の熱処理の温度は1850℃以上である請求項10ないし請求項16いずれか一項記載の半導体装置の製造方法。
- 前記第1の熱処理の前に、前記炭化珪素層の上に炭素膜を形成し、
前記第1の熱処理の後に、前記炭素膜を除去する請求項10ないし請求項17いずれか一項記載の半導体装置の製造方法。 - 前記酸化シリコン膜は、気相成長法により形成する請求項10ないし請求項18いずれか一項記載の半導体装置の製造方法。
- 前記第1のイオン注入及び前記第2のイオン注入は、前記炭化珪素層の同一の領域に対して行われる請求項10ないし請求項19いずれか一項記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020114003A JP7326227B2 (ja) | 2020-07-01 | 2020-07-01 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
US17/176,525 US11469301B2 (en) | 2020-07-01 | 2021-02-16 | Semiconductor device, semiconductor device manufacturing method, inverter circuit, driver device, vehicle, and elevator |
US17/902,074 US11764269B2 (en) | 2020-07-01 | 2022-09-02 | Semiconductor device, semiconductor device manufacturing method, inverter circuit, driver device, vehicle, and elevator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020114003A JP7326227B2 (ja) | 2020-07-01 | 2020-07-01 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022012282A true JP2022012282A (ja) | 2022-01-17 |
JP7326227B2 JP7326227B2 (ja) | 2023-08-15 |
Family
ID=79167596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020114003A Active JP7326227B2 (ja) | 2020-07-01 | 2020-07-01 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
Country Status (2)
Country | Link |
---|---|
US (2) | US11469301B2 (ja) |
JP (1) | JP7326227B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11824083B2 (en) | 2021-03-18 | 2023-11-21 | Kabushiki Kaisha Toshiba | Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11764270B2 (en) * | 2020-03-19 | 2023-09-19 | Kabushiki Kaisha Toshiba | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator |
US11239079B2 (en) | 2020-03-19 | 2022-02-01 | Kabushiki Kaisha Toshiba | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator |
JP7326227B2 (ja) * | 2020-07-01 | 2023-08-15 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP7404183B2 (ja) * | 2020-07-17 | 2023-12-25 | 株式会社東芝 | 半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013187302A (ja) * | 2012-03-07 | 2013-09-19 | National Institute Of Advanced Industrial & Technology | SiC半導体装置及びその製造方法 |
JP2014067927A (ja) * | 2012-09-26 | 2014-04-17 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2016018861A (ja) * | 2014-07-07 | 2016-02-01 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
JP2016063122A (ja) * | 2014-09-19 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
JP2016157761A (ja) * | 2015-02-24 | 2016-09-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2018046246A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2020047668A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6090986B2 (ja) | 2013-01-22 | 2017-03-08 | 国立研究開発法人産業技術総合研究所 | SiC半導体装置及びその製造方法 |
JP2014222735A (ja) | 2013-05-14 | 2014-11-27 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP6300262B2 (ja) | 2013-09-18 | 2018-03-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6567601B2 (ja) | 2017-06-19 | 2019-08-28 | 株式会社東芝 | 半導体装置 |
US11764270B2 (en) * | 2020-03-19 | 2023-09-19 | Kabushiki Kaisha Toshiba | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator |
JP7326227B2 (ja) * | 2020-07-01 | 2023-08-15 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP7273764B2 (ja) * | 2020-08-06 | 2023-05-15 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2022144216A (ja) * | 2021-03-18 | 2022-10-03 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
-
2020
- 2020-07-01 JP JP2020114003A patent/JP7326227B2/ja active Active
-
2021
- 2021-02-16 US US17/176,525 patent/US11469301B2/en active Active
-
2022
- 2022-09-02 US US17/902,074 patent/US11764269B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013187302A (ja) * | 2012-03-07 | 2013-09-19 | National Institute Of Advanced Industrial & Technology | SiC半導体装置及びその製造方法 |
JP2014067927A (ja) * | 2012-09-26 | 2014-04-17 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2016018861A (ja) * | 2014-07-07 | 2016-02-01 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
JP2016063122A (ja) * | 2014-09-19 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
JP2016157761A (ja) * | 2015-02-24 | 2016-09-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2018046246A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2020047668A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11824083B2 (en) | 2021-03-18 | 2023-11-21 | Kabushiki Kaisha Toshiba | Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator |
Also Published As
Publication number | Publication date |
---|---|
US20220416030A1 (en) | 2022-12-29 |
US11764269B2 (en) | 2023-09-19 |
JP7326227B2 (ja) | 2023-08-15 |
US20220005925A1 (en) | 2022-01-06 |
US11469301B2 (en) | 2022-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7326227B2 (ja) | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 | |
US20230387216A1 (en) | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
US11848211B2 (en) | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
CN106024849B (zh) | 半导体装置、倒相电路、驱动装置、车辆以及升降机 | |
US20240047514A1 (en) | Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator | |
US10714610B2 (en) | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator | |
JP2016181672A (ja) | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 | |
JP6776204B2 (ja) | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 | |
US20220302261A1 (en) | Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator | |
CN108417633B (zh) | 半导体装置、半导体装置的制造方法、逆变器电路、驱动装置、车辆以及升降机 | |
US20230197790A1 (en) | Method for manufacturing semiconductor device, semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
US20230082881A1 (en) | Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator | |
JP7005847B2 (ja) | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 | |
US20240087897A1 (en) | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
US20220310791A1 (en) | Semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
JP7072148B2 (ja) | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220224 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230327 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230404 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230518 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230704 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230802 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7326227 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |