JP2021527945A - チューナブルvcsel内の量子井戸配置 - Google Patents
チューナブルvcsel内の量子井戸配置 Download PDFInfo
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- Semiconductor Lasers (AREA)
Abstract
【選択図】図2
Description
本出願は、2018年6月19日に出願された米国仮出願第62/687,071号の合衆国法典(USC)第35巻第119条(e)に基づく利益を主張し、その全体が参照により本明細書に組み込まれる。
Claims (20)
- 少なくとも1対の量子井戸を有する活性領域を有するチューナブル垂直共振器面発光レーザ(VCSEL)であって、前記量子井戸は、前記活性領域の半導体材料内における前記VCSELの中心波長の1/4だけ離間している、チューナブルVCSEL。
- 前記中心波長が950〜1150nmである、請求項1に記載のチューナブルVCSEL。
- 前記中心波長が約1050nmである、請求項1に記載のチューナブルVCSEL。
- 少なくとも2対の量子井戸をさらに備え、各対の前記量子井戸の間隔は、前記活性領域の半導体材料における中心波長の1/4である、請求項1に記載のチューナブルVCSEL。
- 少なくとも3対の量子井戸をさらに備え、各対の前記量子井戸の間隔は、前記活性領域の半導体材料における中心波長の1/4である、請求項1に記載のチューナブルVCSEL。
- 膜装置と、前記活性領域を含む半VCSEL装置と、を備える、請求項1に記載のチューナブルVCSEL。
- 前記膜装置は、前記半VCSEL装置に接合される、請求項6に記載のチューナブルVCSEL。
- 偏光が制御される、請求項1に記載のチューナブルVCSEL。
- 前記活性領域の片側に分布ブラッグ反射器を備える、請求項1に記載のチューナブルVCSEL。
- 前記分布ブラッグ反射器は、SiO2/Ta2O5から構成される、請求項9に記載のチューナブルVCSEL。
- 少なくとも1対の量子井戸を有する活性領域を有するチューナブル垂直共振器面発光レーザ(VCSEL)であって、チューニング範囲の中心波長で、前記活性領域の量子井戸は、VCSEL内部の定在波のアンチノードの両側に位置する、チューナブルVCSEL。
- 前記中心波長が950〜1150nmである、請求項11に記載のチューナブルVCSEL。
- 前記中心波長が約1050nmである、請求項11に記載のチューナブルVCSEL。
- 少なくとも2対の量子井戸をさらに備え、各対の前記量子井戸の間隔は、前記活性領域の半導体材料における中心波長の1/4である、請求項11に記載のチューナブルVCSEL。
- 少なくとも3対の量子井戸をさらに備え、各対の前記量子井戸の間隔は、前記活性領域の半導体材料における中心波長の1/4である、請求項11に記載のチューナブルVCSEL。
- 膜装置と、前記活性領域を含む半VCSEL装置と、を備える、請求項11に記載のチューナブルVCSEL。
- 前記膜装置は、前記半VCSEL装置に接合される、請求項16に記載のチューナブルVCSEL。
- 偏光が制御される、請求項11に記載のチューナブルVCSEL。
- 前記活性領域の片側に分布ブラッグ反射器を備える、請求項11に記載のチューナブルVCSEL。
- 前記分布ブラッグ反射器は、SiO2/Ta2O5から構成される、請求項19に記載のチューナブルVCSEL。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201862687071P | 2018-06-19 | 2018-06-19 | |
US62/687,071 | 2018-06-19 | ||
PCT/US2019/038009 WO2019246278A1 (en) | 2018-06-19 | 2019-06-19 | Quantum well placement in a tunable vcsel |
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JP2021527945A true JP2021527945A (ja) | 2021-10-14 |
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US (1) | US11139635B2 (ja) |
EP (1) | EP3811473B1 (ja) |
JP (1) | JP2021527945A (ja) |
KR (1) | KR20210025002A (ja) |
DK (1) | DK3811473T3 (ja) |
WO (1) | WO2019246278A1 (ja) |
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EP3920348B1 (en) * | 2020-06-02 | 2023-03-08 | TRUMPF Photonic Components GmbH | Vertical cavity surface emitting laser with integrated photodiode |
US20220115838A1 (en) | 2020-10-14 | 2022-04-14 | Excelitas Technologies Corp. | Tunable VCSEL with Strain Compensated Semiconductor DBR |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013229580A (ja) * | 2012-03-22 | 2013-11-07 | Palo Alto Research Center Inc | 第3の反射器を組み込んだ面発光レーザ |
EP2675024A2 (en) * | 2012-06-14 | 2013-12-18 | Palo Alto Research Center Incorporated | Electron beam pumped vertical cavity surface emitting laser |
JP2016513889A (ja) * | 2013-03-15 | 2016-05-16 | プレビウム リサーチ インコーポレイテッド | 広帯域可変掃引光源 |
JP2017017276A (ja) * | 2015-07-06 | 2017-01-19 | キヤノン株式会社 | 波長可変レーザ、情報取得装置及び撮像装置 |
JP2019201179A (ja) * | 2018-05-18 | 2019-11-21 | 株式会社Qdレーザ | 面発光レーザおよび検査装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6195485B1 (en) * | 1998-10-26 | 2001-02-27 | The Regents Of The University Of California | Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector |
US6711203B1 (en) * | 2000-09-22 | 2004-03-23 | Blueleaf, Inc. | Optical transmitter comprising a stepwise tunable laser |
JP6136284B2 (ja) * | 2012-03-13 | 2017-05-31 | 株式会社リコー | 半導体積層体及び面発光レーザ素子 |
US20140176958A1 (en) | 2012-12-21 | 2014-06-26 | Axsun Technologies, Inc. | OCT System with Bonded MEMS Tunable Mirror VCSEL Swept Source |
US10359551B2 (en) | 2013-08-12 | 2019-07-23 | Axsun Technologies, Inc. | Dielectric-enhanced metal coatings for MEMS tunable filters |
US9466948B2 (en) * | 2014-09-22 | 2016-10-11 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Nonequilibrium pulsed femtosecond semiconductor disk laser |
-
2019
- 2019-06-19 JP JP2020565346A patent/JP2021527945A/ja active Pending
- 2019-06-19 KR KR1020207034036A patent/KR20210025002A/ko active IP Right Grant
- 2019-06-19 WO PCT/US2019/038009 patent/WO2019246278A1/en unknown
- 2019-06-19 US US16/446,303 patent/US11139635B2/en active Active
- 2019-06-19 DK DK19736881.4T patent/DK3811473T3/da active
- 2019-06-19 EP EP19736881.4A patent/EP3811473B1/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013229580A (ja) * | 2012-03-22 | 2013-11-07 | Palo Alto Research Center Inc | 第3の反射器を組み込んだ面発光レーザ |
EP2675024A2 (en) * | 2012-06-14 | 2013-12-18 | Palo Alto Research Center Incorporated | Electron beam pumped vertical cavity surface emitting laser |
JP2016513889A (ja) * | 2013-03-15 | 2016-05-16 | プレビウム リサーチ インコーポレイテッド | 広帯域可変掃引光源 |
JP2017017276A (ja) * | 2015-07-06 | 2017-01-19 | キヤノン株式会社 | 波長可変レーザ、情報取得装置及び撮像装置 |
JP2019201179A (ja) * | 2018-05-18 | 2019-11-21 | 株式会社Qdレーザ | 面発光レーザおよび検査装置 |
Non-Patent Citations (1)
Title |
---|
QIAO PENGFEI ET AL., "WAVELENGTH-SWEPT VCSELS", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, vol. 23, no. 6, JPN6023008955, November 2017 (2017-11-01), pages 1 - 16, ISSN: 0005113678 * |
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US20190386461A1 (en) | 2019-12-19 |
WO2019246278A1 (en) | 2019-12-26 |
DK3811473T3 (da) | 2022-12-05 |
US11139635B2 (en) | 2021-10-05 |
KR20210025002A (ko) | 2021-03-08 |
EP3811473B1 (en) | 2022-09-07 |
EP3811473A1 (en) | 2021-04-28 |
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