DK3811473T3 - Placering af kvantum wells i en afstembar vcsel - Google Patents

Placering af kvantum wells i en afstembar vcsel Download PDF

Info

Publication number
DK3811473T3
DK3811473T3 DK19736881.4T DK19736881T DK3811473T3 DK 3811473 T3 DK3811473 T3 DK 3811473T3 DK 19736881 T DK19736881 T DK 19736881T DK 3811473 T3 DK3811473 T3 DK 3811473T3
Authority
DK
Denmark
Prior art keywords
location
quantum wells
tunable vcsel
vcsel
tunable
Prior art date
Application number
DK19736881.4T
Other languages
English (en)
Inventor
Mark E Kuznetsov
Walid A Atia
Peter S Whitney
Bartley C Johnson
Original Assignee
Excelitas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Excelitas Tech Corp filed Critical Excelitas Tech Corp
Application granted granted Critical
Publication of DK3811473T3 publication Critical patent/DK3811473T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DK19736881.4T 2018-06-19 2019-06-19 Placering af kvantum wells i en afstembar vcsel DK3811473T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862687071P 2018-06-19 2018-06-19
PCT/US2019/038009 WO2019246278A1 (en) 2018-06-19 2019-06-19 Quantum well placement in a tunable vcsel

Publications (1)

Publication Number Publication Date
DK3811473T3 true DK3811473T3 (da) 2022-12-05

Family

ID=67185730

Family Applications (1)

Application Number Title Priority Date Filing Date
DK19736881.4T DK3811473T3 (da) 2018-06-19 2019-06-19 Placering af kvantum wells i en afstembar vcsel

Country Status (6)

Country Link
US (1) US11139635B2 (da)
EP (1) EP3811473B1 (da)
JP (1) JP2021527945A (da)
KR (1) KR20210025002A (da)
DK (1) DK3811473T3 (da)
WO (1) WO2019246278A1 (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3920348B1 (en) * 2020-06-02 2023-03-08 TRUMPF Photonic Components GmbH Vertical cavity surface emitting laser with integrated photodiode
CA3198832A1 (en) 2020-10-14 2022-04-21 Excelitas Technologies Corp. Tunable vcsel with strain compensated semiconductor dbr

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
US6711203B1 (en) 2000-09-22 2004-03-23 Blueleaf, Inc. Optical transmitter comprising a stepwise tunable laser
JP6136284B2 (ja) * 2012-03-13 2017-05-31 株式会社リコー 半導体積層体及び面発光レーザ素子
US9112331B2 (en) * 2012-03-22 2015-08-18 Palo Alto Research Center Incorporated Surface emitting laser incorporating third reflector
US9112332B2 (en) * 2012-06-14 2015-08-18 Palo Alto Research Center Incorporated Electron beam pumped vertical cavity surface emitting laser
US20140176958A1 (en) 2012-12-21 2014-06-26 Axsun Technologies, Inc. OCT System with Bonded MEMS Tunable Mirror VCSEL Swept Source
JP6553019B2 (ja) * 2013-03-15 2019-07-31 プレビウム リサーチ インコーポレイテッド 広帯域可変掃引光源
US10359551B2 (en) 2013-08-12 2019-07-23 Axsun Technologies, Inc. Dielectric-enhanced metal coatings for MEMS tunable filters
US9466948B2 (en) * 2014-09-22 2016-10-11 The Arizona Board Of Regents On Behalf Of The University Of Arizona Nonequilibrium pulsed femtosecond semiconductor disk laser
JP2017017276A (ja) * 2015-07-06 2017-01-19 キヤノン株式会社 波長可変レーザ、情報取得装置及び撮像装置
JP2019201179A (ja) * 2018-05-18 2019-11-21 株式会社Ｑｄレーザ 面発光レーザおよび検査装置

Also Published As

Publication number Publication date
WO2019246278A1 (en) 2019-12-26
EP3811473A1 (en) 2021-04-28
US11139635B2 (en) 2021-10-05
EP3811473B1 (en) 2022-09-07
US20190386461A1 (en) 2019-12-19
JP2021527945A (ja) 2021-10-14
KR20210025002A (ko) 2021-03-08

Similar Documents

Publication Publication Date Title
DK3639571T3 (da) Valg af en netværksfunktionsinstans
DK3458443T3 (da) Aromatiske sulfonamidderivater
DK3198348T3 (da) Generering af en styresekvens til kvantestyring
SG11202105177SA (en) Photonics structure with integrated laser
DK3572610T3 (da) Platformstigeapparat
DK3656551T3 (da) Fremgangsmåde til tilvejebringelse af en kemisk resistent film samt en derved opnåelig film
FR3026508B1 (fr) Aide contextuelle a la gestion du vol
FI20165443A (fi) Tietoliikenteen kirjaaminen tietokoneverkossa
DK3304982T3 (da) Muliggørelse af flere numerologier i et netværk
DK3408184T3 (da) Genlukkeligt dåselåg
DK3374589T3 (da) Sammenfoldelig stige
DK3497403T3 (da) Geolokalisering af personer baseret på et afledt socialt netværk
DK3584654T3 (da) Hierarkisk fordelt ledger
DK3247880T3 (da) Sammensat slickline-kommunikation
DK3572343T3 (da) Anvendelse af en kunststofpalle
DK3173819T3 (da) Borehulsmåling via afstemmelig kildelasere
DK3811473T3 (da) Placering af kvantum wells i en afstembar vcsel
CL2018000754S1 (es) Cerradura
DK3490514T3 (da) Bestemmelse af et sårs tilstand
DE112016001724A5 (de) Optoelektronisches Bauelement mit Resonator
IT201800007717A1 (it) Scaletta retrattile.
CL2018000737S1 (es) Cerradura
DK3241960T3 (da) En lås
DE112019003181A5 (de) Stufenbohrer
DE112018005379A5 (de) Laserdiode