JP2021509226A - トランジスタ、およびメモリ・セルの高さ方向に延びるストリングのアレイ - Google Patents
トランジスタ、およびメモリ・セルの高さ方向に延びるストリングのアレイ Download PDFInfo
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- JP2021509226A JP2021509226A JP2020536234A JP2020536234A JP2021509226A JP 2021509226 A JP2021509226 A JP 2021509226A JP 2020536234 A JP2020536234 A JP 2020536234A JP 2020536234 A JP2020536234 A JP 2020536234A JP 2021509226 A JP2021509226 A JP 2021509226A
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- 239000000463 material Substances 0.000 claims abstract description 191
- 239000011810 insulating material Substances 0.000 claims abstract description 132
- 239000012212 insulator Substances 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 239000011232 storage material Substances 0.000 claims description 29
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 239000010432 diamond Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 21
- 238000002425 crystallisation Methods 0.000 description 17
- 230000008025 crystallization Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000003754 machining Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
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- 238000006243 chemical reaction Methods 0.000 description 2
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- 239000002019 doping agent Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
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- 229910017083 AlN Inorganic materials 0.000 description 1
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
いくつかの実施形態では、トランジスタは、対向した第1および第2の側を有するチャネル材料を含む。ゲートは、チャネル材料の第1の側にあり、ゲート絶縁体は、ゲートとチャネル材料との間にある。第1の絶縁性材料は、対向した第1および第2の側を有し、第1の側が、チャネル材料の第2の側に隣接している。第1の絶縁性材料の組成物とは異なる組成物の第2の絶縁性材料は、第1の絶縁性材料の第2の側に隣接している。第2の絶縁性材料は、(a)、(b)、および(c)のうちの少なくとも1つを有し、ただし、(a):第1の材料よりも低い酸素拡散率、(b):正味の正電荷、および(c):第1の材料よりも少なくとも2倍大きい剪断強度である。いくつかの実施形態では、メモリ・セルの高さ方向に延びるストリングのアレイは、そのようなトランジスタを備える。
Claims (36)
- 対向した第1および第2の側を有するチャネル材料と、
前記チャネル材料の前記第1の側に隣接したゲートであって、ゲート絶縁体が前記ゲートと前記チャネル材料との間にある、ゲートと、
対向した第1および第2の側を有する第1の絶縁性材料であって、前記第1の側が前記チャネル材料の前記第2の側に隣接している、第1の絶縁性材料と、
前記第1の絶縁性材料の組成物とは異なる組成物の第2の絶縁性材料であって、前記第1の絶縁性材料の前記第2の側に隣接し、(a)、(b)、および(c)のうちの少なくとも1つを有する第2の絶縁性材料と
を備えるトランジスタであって、
(a):前記第1の材料よりも低い酸素拡散率、
(b):正味の正電荷、
(c):前記第1の材料よりも少なくとも2倍大きい剪断強度
である、トランジスタ。 - 前記第1の絶縁性材料は、前記チャネル材料の前記第2の側に直に接している、請求項1に記載のトランジスタ。
- 前記第2の絶縁性材料は、前記第1の絶縁性材料の前記第2の側に直に接している、請求項1に記載のトランジスタ。
- 前記第2の絶縁性材料は、(a):前記第1の材料よりも低い酸素拡散率を有する、請求項1に記載のトランジスタ。
- 前記第2の絶縁性材料は、600℃で5×10−11/cm2以下の酸素拡散率を有する、請求項4に記載のトランジスタ。
- 前記第2の絶縁性材料は、前記第1の材料よりも少なくとも2倍低い酸素拡散率を有する、請求項4に記載のトランジスタ。
- 前記第2の絶縁性材料は、前記第1の材料よりも少なくとも10倍低い酸素拡散率を有する、請求項6に記載のトランジスタ。
- 前記第2の絶縁性材料は、(b):正味の正電荷を有する、請求項1に記載のトランジスタ。
- 前記第2の絶縁性材料は、少なくとも5.0×1012/cm2の正味の正電荷を有する、請求項8に記載のトランジスタ。
- 前記第2の絶縁性材料は、(c):前記第1の材料よりも少なくとも2倍大きい剪断強度を有する、請求項1に記載のトランジスタ。
- 前記第2の絶縁性材料は、少なくとも200GPaの剪断強度を有する、請求項10に記載のトランジスタ。
- 前記第2の絶縁性材料は、前記第1の材料よりも少なくとも4倍大きい剪断強度を有する、請求項10に記載のトランジスタ。
- 前記第2の絶縁性材料は、前記(a)、(b)、および(c)のうちの1つのみを有する、請求項1に記載のトランジスタ。
- 前記第2の絶縁性材料は、前記(a)、(b)、および(c)のうちの2つのみを有する、請求項1に記載のトランジスタ。
- 前記第2の絶縁性材料は、前記(a)、(b)、および(c)の3つ全部を有する、請求項1に記載のトランジスタ。
- 前記トランジスタは、水平である、請求項1に記載のトランジスタ。
- 前記トランジスタは、高さ方向に延びる、請求項1に記載のトランジスタ。
- 前記トランジスタは、垂直または垂直の10°以内である、請求項17に記載のトランジスタ。
- 前記チャネル材料は結晶シリコンを含み、前記第1の絶縁性材料はSixOy(それぞれ0よりも大きいxおよびy)を含み、前記第2の絶縁性材料はSi3N4を含む、請求項1に記載のトランジスタ。
- 前記ゲートは、制御ゲートであり、前記トランジスタは、
前記制御ゲートに隣接した電荷ブロック領域と、
前記電荷ブロック領域に隣接した電荷貯蔵材料と、
前記チャネル材料と前記電荷貯蔵材料との間にある前記ゲート絶縁体と
を備える、請求項1に記載のトランジスタ。 - 揮発性である、請求項1に記載のトランジスタ。
- いかなる電荷貯蔵材料も持たない、請求項21に記載のトランジスタ。
- 請求項1に記載のトランジスタのアレイ。
- 対向した第1および第2の側を有するチャネル材料と、
前記チャネル材料の前記第1の側に隣接したゲートであって、ゲート絶縁体が前記ゲートと前記チャネル材料との間にある、ゲートと、
対向した第1および第2の側を有する第1の絶縁性材料であって、前記第1の側が前記チャネル材料の前記第2の側に隣接し、SixOy(それぞれ0よりも大きいxおよびy)、SixOyNz(それぞれ0よりも大きいx、y、およびz)、Al3O4、ZrO2、HfO2、Pr2O3、およびTa2O5のうちの少なくとも1つを含む、第1の絶縁性材料と、
前記第1の絶縁性材料の組成物とは異なる組成物の第2の絶縁性材料であって、前記第1の絶縁性材料の前記第2の側に隣接し、Si3N4、Al2O3、HfN、HfOxNy(それぞれ0よりも大きいxおよびy)、HfYxOy(それぞれ0よりも大きいxおよびy)、BN、AlN、SiC、ダイヤモンド、ダイヤモンド・ライク・カーボン、SixNyHz(それぞれ0よりも大きいx、y、およびz)、HfxNyHz(それぞれ0よりも大きいx、y、およびz)、HfOxNyHz(それぞれ0よりも大きいx、y、およびz)、HfYxOyHz(それぞれ0よりも大きいx、y、およびz)、BNxHy(それぞれ0よりも大きいxおよびy)、およびAlNxHy(それぞれ0よりも大きいxおよびy)のうちの少なくとも1つを含む、第2の絶縁性材料と
を備えるトランジスタ。 - 前記第1の絶縁性材料の前記第1の側は、前記チャネル材料の前記第2の側に直に接しており、SixOy、SixOyNz、Al3O4、ZrO2、HfO2、Pr2O3、およびTa2O5のうちの前記少なくとも1つは、前記チャネル材料の前記第2の側に直に接している、請求項24に記載のトランジスタ。
- 前記第1の絶縁性材料は、SixOy、SixOyNz、Al3O4、ZrO2、HfO2、Pr2O3、およびTa2O5のうちの前記少なくとも1つから本質的になる、請求項25に記載のトランジスタ。
- 前記第2の絶縁性材料は、前記第1の絶縁性材料の前記第2の側に直に接しており、Si3N4、Al2O3、HfN、HfOxNy、HfYxOy、BN、AlN、SiC、ダイヤモンド、ダイヤモンド・ライク・カーボン、SixNyHz、HfxNyHz、HfOxNyHz、HfYxOyHz、BNxHy、およびAlNxHyのうちの前記少なくとも1つは、前記第1の絶縁性材料のSixOy、SixOyNz、Al3O4、ZrO2、HfO2、Pr2O3、およびTa2O5のうちの前記少なくとも1つに直に接している、請求項24に記載のトランジスタ。
- 前記第2の絶縁性材料は、Si3N4、Al2O3、HfN、HfOxNy、HfYxOy、BN、AlN、SiC、ダイヤモンド、ダイヤモンド・ライク・カーボン、SixNyHz、HfxNyHz、HfOxNyHz、HfYxOyHz、BNxHy、およびAlNxHyのうちの前記少なくとも1つから本質的になる、請求項27に記載のトランジスタ。
- 前記第1の絶縁性材料は、SixOy、SixOyNz、Al3O4、ZrO2、HfO2、Pr2O3、およびTa2O5のうちの2つ以上を含む、請求項24に記載のトランジスタ。
- 前記第2の絶縁性材料は、Si3N4、Al2O3、HfN、HfOxNy、HfYxOy、BN、AlN、SiC、ダイヤモンド、ダイヤモンド・ライク・カーボン、SixNyHz、HfxNyHz、HfOxNyHz、HfYxOyHz、BNxHy、およびAlNxHyのうちの2つ以上を含む、請求項24に記載のトランジスタ。
- 交互する絶縁階層とワード線階層との垂直スタックであって、前記ワード線階層は、個々のメモリ・セルの制御ゲート領域に対応する端子端部を有する、垂直スタックと、
個々の前記制御ゲート領域に沿って高さ方向に延びる前記個々のメモリ・セルの電荷ブロック領域と、
前記電荷ブロック領域の個々に沿って高さ方向に延びる前記個々のメモリ・セルの電荷貯蔵材料と、
前記スタックに沿って高さ方向に延び、側面内側を有するチャネル材料と、
前記チャネル材料と前記電荷貯蔵材料との間で横方向にある絶縁の電荷通過材料と、
対向した第1および第2の側を有する第1の絶縁性材料であって、前記第1の側が前記チャネル材料の前記側面内側に隣接している、第1の絶縁性材料と、
前記第1の絶縁性材料の組成物とは異なる組成物の第2の絶縁性材料であって、前記第1の絶縁性材料の前記第2の側に隣接し、(a)、(b)、および(c)のうちの少なくとも1つを有する第2の絶縁性材料と
を備える、メモリ・セルの高さ方向に延びるストリングのアレイであって、
(a):前記第1の材料よりも低い酸素拡散率、
(b):正味の正電荷、
(c):前記第1の材料よりも少なくとも2倍大きい剪断強度
である、アレイ。 - 前記第1の絶縁性材料は、前記チャネル材料の前記側面内側に直に接している、請求項31に記載のアレイ。
- 前記第2の絶縁性材料は、前記第1の絶縁性材料の前記第2の側に直に接している、請求項31に記載のアレイ。
- メモリ・セルの高さ方向に延びるストリングのアレイであって、
交互する絶縁階層とワード線階層との垂直スタックであって、前記ワード線階層は、個々のメモリ・セルの制御ゲート領域に対応する端子端部を有する、垂直スタックと、
個々の前記制御ゲート領域に沿って高さ方向に延びる前記個々のメモリ・セルの電荷ブロック領域と、
前記電荷ブロック領域の個々に沿って高さ方向に延びる前記個々のメモリ・セルの電荷貯蔵材料と、
前記スタックに沿って高さ方向に延び、側面内側を有するチャネル材料と、
前記チャネル材料と前記電荷貯蔵材料との間で横方向にある絶縁の電荷通過材料と、
対向した第1および第2の側を有する第1の絶縁性材料であって、前記第1の側が前記チャネル材料の前記側面内側に隣接し、SixOy(それぞれ0よりも大きいxおよびy)、SixOyNz(それぞれ0よりも大きいx、y、およびz)、Al3O4、ZrO2、HfO2、Pr2O3、およびTa2O5のうちの少なくとも1つを含む、第1の絶縁性材料と、
前記第1の絶縁性材料の組成物とは異なる組成物の第2の絶縁性材料であって、前記第1の絶縁性材料の前記第2の側に隣接し、Si3N4、Al2O3、HfN、HfOxNy(それぞれ0よりも大きいxおよびy)、HfYxOy(それぞれ0よりも大きいxおよびy)、BN、AlN、SiC、ダイヤモンド、ダイヤモンド・ライク・カーボン、SixNyHz(それぞれ0よりも大きいx、y、およびz)、HfxNyHz(それぞれ0よりも大きいx、y、およびz)、HfOxNyHz(それぞれ0よりも大きいx、y、およびz)、HfYxOyHz(それぞれ0よりも大きいx、y、およびz)、BNxHy(それぞれ0よりも大きいxおよびy)、およびAlNxHy(それぞれ0よりも大きいxおよびy)のうちの少なくとも1つを含む、第2の絶縁性材料と
を備える、アレイ。 - 前記第1の絶縁性材料の前記第1の側は、前記チャネル材料の前記側面内側に直に接しており、SixOy、SixOyNz、Al3O4、ZrO2、HfO2、Pr2O3、およびTa2O5のうちの前記少なくとも1つは、前記チャネル材料の前記側面内側に直に接している、請求項34に記載のアレイ。
- 前記第2の絶縁性材料は、前記第1の絶縁性材料の前記第2の側に直に接しており、Si3N4、Al2O3、HfN、HfOxNy、HfYxOy、BN、AlN、SiC、ダイヤモンド、ダイヤモンド・ライク・カーボン、SixNyHz、HfxNyHz、HfOxNyHz、HfYxOyHz、BNxHy、およびAlNxHyのうちの前記少なくとも1つは、前記第1の絶縁性材料のSixOy、SixOyNz、Al3O4、ZrO2、HfO2、Pr2O3、およびTa2O5のうちの前記少なくとも1つに直に接している、請求項34に記載のアレイ。
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US10297611B1 (en) | 2019-05-21 |
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