KR100731752B1 - 박막트랜지스터 - Google Patents
박막트랜지스터 Download PDFInfo
- Publication number
- KR100731752B1 KR100731752B1 KR1020050083326A KR20050083326A KR100731752B1 KR 100731752 B1 KR100731752 B1 KR 100731752B1 KR 1020050083326 A KR1020050083326 A KR 1020050083326A KR 20050083326 A KR20050083326 A KR 20050083326A KR 100731752 B1 KR100731752 B1 KR 100731752B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- thin film
- film transistor
- semiconductor layer
- silicon layer
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 238000002425 crystallisation Methods 0.000 claims abstract description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 38
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000003054 catalyst Substances 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 abstract description 19
- 239000010410 layer Substances 0.000 description 133
- 238000010438 heat treatment Methods 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000007715 excimer laser crystallization Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (8)
- 기판;상기 기판상에 위치하고, 채널 영역을 포함하는 반도체층; 및상기 반도체층과 절연된 게이트 전극을 포함하며,상기 반도체층은 한 점을 중심으로 방사형으로 결정화된 실리콘으로 이루어져 있고, 상기 한 점은 상기 채널 영역 이외에 위치하고 어느 일부가 오픈된 반도체층에 의해 둘러싸인 것을 특징으로 하는 박막트랜지스터.
- 제 1 항에 있어서,상기 반도체층은 SGS 결정화법으로 결정화된 실리콘인 것을 특징으로 하는 박막트랜지스터.
- 제 2 항에 있어서,상기 SGS 결정화법은 비정질 실리콘층, 캡핑층 및 금속 촉매층을 형성한 후, 이를 열처리하여 상기 비정질 실리콘층을 다결정 실리콘층으로 결정화하는 결정화법인 것을 특징으로 박막트랜지스터.
- 제 3 항에 있어서,상기 캡핑층은 실리콘 질화막인 것을 특징으로 하는 박막트랜지스터.
- 제 3 항에 있어서,상기 금속 촉매층은 Ni, Pd, Ti, Ag, Au, Al, Sn, Sb, Cu, Co, Mo, Cr, Ru, Rh, Cd 또는 Pt 중 어느 하나 또는 다수개로 이루어져 있는 것을 특징으로 하는 박막트랜지스터.
- 제 1 항에 있어서,상기 반도체층은 하나의 결정립에 형성되어 있는 것을 특징으로 하는 박막트랜지스터.
- 제 1 항에 있어서,상기 한 점은 SGS 결정화법의 시드인 것을 특징으로 하는 박막트랜지스터.
- 제 1 항에 있어서,상기 박막트랜지스터는 2 또는 다수개의 채널을 구비한 박막트랜지스터인 것을 특징으로 하는 박막트랜지스터.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050083326A KR100731752B1 (ko) | 2005-09-07 | 2005-09-07 | 박막트랜지스터 |
US11/515,903 US7863621B2 (en) | 2005-09-07 | 2006-09-06 | Thin film transistor |
EP06254676A EP1763085A3 (en) | 2005-09-07 | 2006-09-07 | Thin Film transistor having a channel surrounding a crystallisation seed point |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050083326A KR100731752B1 (ko) | 2005-09-07 | 2005-09-07 | 박막트랜지스터 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070028121A KR20070028121A (ko) | 2007-03-12 |
KR100731752B1 true KR100731752B1 (ko) | 2007-06-22 |
Family
ID=37502170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050083326A KR100731752B1 (ko) | 2005-09-07 | 2005-09-07 | 박막트랜지스터 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7863621B2 (ko) |
EP (1) | EP1763085A3 (ko) |
KR (1) | KR100731752B1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102098588B1 (ko) * | 2013-06-28 | 2020-04-08 | 삼성전자주식회사 | 반도체 소자 및 그의 제조 방법 |
US10446681B2 (en) | 2017-07-10 | 2019-10-15 | Micron Technology, Inc. | NAND memory arrays, and devices comprising semiconductor channel material and nitrogen |
US10559466B2 (en) | 2017-12-27 | 2020-02-11 | Micron Technology, Inc. | Methods of forming a channel region of a transistor and methods used in forming a memory array |
US10297611B1 (en) | 2017-12-27 | 2019-05-21 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
US11538919B2 (en) | 2021-02-23 | 2022-12-27 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09153458A (ja) * | 1995-09-26 | 1997-06-10 | Fujitsu Ltd | 薄膜半導体装置およびその製造方法 |
JP2000208771A (ja) | 1999-01-11 | 2000-07-28 | Hitachi Ltd | 半導体装置、液晶表示装置およびこれらの製造方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0390608B1 (en) * | 1989-03-31 | 1999-06-09 | Canon Kabushiki Kaisha | Method for forming semiconductor thin-film and resulting semiconductor thin-film |
US6323071B1 (en) * | 1992-12-04 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor device |
TW264575B (ko) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
US6162667A (en) * | 1994-03-28 | 2000-12-19 | Sharp Kabushiki Kaisha | Method for fabricating thin film transistors |
US5956581A (en) * | 1995-04-20 | 1999-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JPH1012889A (ja) * | 1996-06-18 | 1998-01-16 | Semiconductor Energy Lab Co Ltd | 半導体薄膜および半導体装置 |
TW379360B (en) * | 1997-03-03 | 2000-01-11 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
JPH11111994A (ja) * | 1997-10-03 | 1999-04-23 | Sanyo Electric Co Ltd | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
US6228693B1 (en) * | 1998-06-05 | 2001-05-08 | Sharp Laboratories Of America, Inc. | Selected site, metal-induced, continuous crystallization method |
US6346437B1 (en) * | 1998-07-16 | 2002-02-12 | Sharp Laboratories Of America, Inc. | Single crystal TFT from continuous transition metal delivery method |
JP2000277738A (ja) * | 1999-03-19 | 2000-10-06 | Fujitsu Ltd | 薄膜トランジスタおよびその製造方法 |
US6746901B2 (en) | 2000-05-12 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating thereof |
JP4683761B2 (ja) | 2000-05-12 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001345451A (ja) * | 2000-05-30 | 2001-12-14 | Hitachi Ltd | 薄膜半導体集積回路装置、それを用いた画像表示装置、及びその製造方法 |
KR100426210B1 (ko) * | 2000-11-11 | 2004-04-03 | 피티플러스(주) | 실리콘 박막 결정화 방법 |
JP4732599B2 (ja) | 2001-01-26 | 2011-07-27 | 株式会社日立製作所 | 薄膜トランジスタ装置 |
KR200263093Y1 (ko) | 2001-10-26 | 2002-01-31 | 주식회사 성민산업 | 투시창을 갖는 반침수납가구 |
US7214573B2 (en) * | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
KR100477103B1 (ko) * | 2001-12-19 | 2005-03-18 | 삼성에스디아이 주식회사 | 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법 |
JP3982297B2 (ja) | 2002-03-28 | 2007-09-26 | セイコーエプソン株式会社 | 半導体装置の製造方法及び半導体装置、電気光学装置、電子機器 |
JP4900756B2 (ja) * | 2002-04-16 | 2012-03-21 | セイコーエプソン株式会社 | 半導体装置の製造方法、電気光学装置、集積回路、および電子機器 |
KR100454751B1 (ko) | 2002-10-21 | 2004-11-03 | 삼성에스디아이 주식회사 | 듀얼 또는 멀티플 게이트를 사용하는 티에프티의 제조 방법 |
JP2004186206A (ja) | 2002-11-29 | 2004-07-02 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置、電気光学装置、電子機器 |
KR100508001B1 (ko) | 2002-12-30 | 2005-08-17 | 엘지.필립스 엘시디 주식회사 | 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법 |
JP4059104B2 (ja) * | 2003-02-28 | 2008-03-12 | セイコーエプソン株式会社 | 相補型薄膜トランジスタ回路、cmosインバータ回路、電気光学装置、電子機器 |
KR100618184B1 (ko) | 2003-03-31 | 2006-08-31 | 비오이 하이디스 테크놀로지 주식회사 | 결정화 방법 |
TW200500979A (en) * | 2003-05-20 | 2005-01-01 | Adv Lcd Tech Dev Ct Co Ltd | Light emission type display apparatus |
JP2004363241A (ja) * | 2003-06-03 | 2004-12-24 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法 |
JP2005026330A (ja) | 2003-06-30 | 2005-01-27 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置、電気光学装置、電子機器 |
TWI230462B (en) * | 2003-09-15 | 2005-04-01 | Toppoly Optoelectronics Corp | Thin film transistor structure with self-aligned intra-gate |
US7521368B2 (en) * | 2004-05-07 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR100712101B1 (ko) * | 2004-06-30 | 2007-05-02 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
KR100659758B1 (ko) * | 2004-09-22 | 2006-12-19 | 삼성에스디아이 주식회사 | 박막트랜지스터 제조 방법 |
-
2005
- 2005-09-07 KR KR1020050083326A patent/KR100731752B1/ko active IP Right Grant
-
2006
- 2006-09-06 US US11/515,903 patent/US7863621B2/en active Active
- 2006-09-07 EP EP06254676A patent/EP1763085A3/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09153458A (ja) * | 1995-09-26 | 1997-06-10 | Fujitsu Ltd | 薄膜半導体装置およびその製造方法 |
JP2000208771A (ja) | 1999-01-11 | 2000-07-28 | Hitachi Ltd | 半導体装置、液晶表示装置およびこれらの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1763085A2 (en) | 2007-03-14 |
US20070082433A1 (en) | 2007-04-12 |
EP1763085A3 (en) | 2011-02-23 |
KR20070028121A (ko) | 2007-03-12 |
US7863621B2 (en) | 2011-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100875432B1 (ko) | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 | |
JP5399298B2 (ja) | 有機電界発光表示装置及びその製造方法 | |
KR100848341B1 (ko) | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 | |
KR100721555B1 (ko) | 박막트랜지스터 및 그 제조 방법 | |
KR101084233B1 (ko) | 박막트랜지스터 및 그 제조 방법 | |
KR100839735B1 (ko) | 트랜지스터, 이의 제조 방법 및 이를 구비한 평판 표시장치 | |
US7452790B2 (en) | Method of fabricating thin film transistor | |
KR20080111693A (ko) | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 | |
JP2009049419A (ja) | 薄膜トランジスタ、これを具備した有機電界発光表示装置、およびこれらの製造方法 | |
KR20090020287A (ko) | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 | |
JP2006054415A (ja) | 薄膜トランジスタ及びその製造方法 | |
JP5527874B2 (ja) | 薄膜トランジスタ、その製造方法及びこれを含む有機電界発光表示装置 | |
KR20100007609A (ko) | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 | |
KR100731752B1 (ko) | 박막트랜지스터 | |
US8125033B2 (en) | Polycrystalline silicon layer, flat panel display using the same, and method of fabricating the same | |
KR100761082B1 (ko) | 박막트랜지스터 및 그의 제조 방법 | |
US7749873B2 (en) | Polycrystalline silicon layer, flat panel display using the same, and methods of fabricating the same | |
US7256080B2 (en) | Method of fabricating thin film transistor | |
KR100769449B1 (ko) | 박막트랜지스터 및 그의 제조방법 | |
KR100731765B1 (ko) | 박막트랜지스터 및 그 제조 방법 | |
JP2010157674A (ja) | 薄膜トランジスタ、その製造方法及びそれを含む有機電界発光表示装置 | |
KR20060057458A (ko) | 박막트랜지스터 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
G170 | Publication of correction | ||
FPAY | Annual fee payment |
Payment date: 20130530 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140530 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150601 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160530 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170601 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20190529 Year of fee payment: 13 |