JP2021184410A - エッチング方法及びプラズマ処理装置 - Google Patents
エッチング方法及びプラズマ処理装置 Download PDFInfo
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- titanium nitride
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- 238000005530 etching Methods 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 48
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000000460 chlorine Substances 0.000 claims abstract description 31
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 29
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 27
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims description 224
- 239000000758 substrate Substances 0.000 claims description 62
- 239000012782 phase change material Substances 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 description 7
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 150000004820 halides Chemical class 0.000 description 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910000039 hydrogen halide Inorganic materials 0.000 description 2
- 239000012433 hydrogen halide Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
Description
Claims (8)
- (a)第1のプラズマを用いて窒化チタン膜をエッチングする工程と、
(b)第2のプラズマを用いて前記窒化チタン膜をエッチングする工程と、
を含み、
前記第1のプラズマは第1の処理ガスから生成され、前記第2のプラズマは第2の処理ガスから生成され、
前記第1の処理ガス及び前記第2の処理ガスのうち一方は、塩素含有ガス及びフルオロカーボンガスを含み、
前記第1の処理ガス及び前記第2の処理ガスのうち他方は、塩素含有ガスを含みフルオロカーボンガスを含まず、
前記(a)及び前記(b)を含むサイクルの繰り返しが実行され、
前記サイクルの前記繰り返しは、前記窒化チタン膜がその上面と下面との間で底面を提供するように該窒化チタン膜がその膜厚方向において部分的にエッチングされた状態で停止される、
エッチング方法。 - 前記窒化チタン膜を有する基板は、相変化材料層を更に有し、
前記窒化チタン膜は、前記相変化材料層上に設けられており、
第3の処理ガスから生成された第3のプラズマを用いて、前記窒化チタン膜における前記底面と前記下面との間の部分及び前記相変化材料層の厚さ方向における一部をエッチングする工程を更に含む、
請求項1に記載のエッチング方法。 - 前記第3の処理ガスは、臭素含有ガスを含む、請求項2に記載のエッチング方法。
- 前記相変化材料層は、ゲルマニウム、アンチモン、及びテルルから形成されている、請求項2又は3に記載のエッチング方法。
- 第4の処理ガスから生成された第4のプラズマを用いて、前記相変化材料層を更にエッチングする工程を更に含む、請求項2〜4の何れか一項に記載のエッチング方法。
- 前記第4の処理ガスは、水素ガス及び炭化水素ガスを含む、請求項5に記載のエッチング方法。
- 前記サイクルにおける前記(a)の時間長と前記(b)の時間長の各々は、1秒以上、3秒以下である、請求項1〜6の何れか一項に記載のエッチング方法。
- チャンバと、
前記チャンバ内で基板を支持するように構成された基板支持器と、
前記チャンバ内に第1の処理ガス及び第2の処理ガスを供給するように構成されたガス供給部と、
前記チャンバ内のガスからプラズマを生成するように構成されたプラズマ生成部と、
前記ガス供給部と前記プラズマ生成部を制御するように構成された制御部と、
を備え、
前記第1の処理ガス及び前記第2の処理ガスのうち一方は、塩素含有ガス及びフルオロカーボンガスを含み、
前記第1の処理ガス及び前記第2の処理ガスのうち他方は、塩素含有ガスを含みフルオロカーボンガスを含まず、
前記制御部は、
前記チャンバ内において前記第1の処理ガスから第1のプラズマを生成して前記基板支持器によって支持された前記基板の窒化チタン膜をエッチングするように、前記ガス供給部及び前記プラズマ生成部を制御する第1の制御と、
前記チャンバ内において前記第2の処理ガスから第2のプラズマを生成して前記窒化チタン膜をエッチングするように、前記ガス供給部及び前記プラズマ生成部を制御する第2の制御と、
を含む制御サイクルの繰り返しを実行し、
前記制御サイクルの前記繰り返しは、前記窒化チタン膜がその上面と下面との間で底面を提供するように該窒化チタン膜がその膜厚方向において部分的にエッチングされた状態で停止される、
プラズマ処理装置。
Priority Applications (5)
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JP2020088724A JP7482684B2 (ja) | 2020-05-21 | 2020-05-21 | エッチング方法及びプラズマ処理装置 |
KR1020210059911A KR20210144577A (ko) | 2020-05-21 | 2021-05-10 | 에칭 방법 및 플라즈마 처리 장치 |
CN202110504734.3A CN113707551A (zh) | 2020-05-21 | 2021-05-10 | 蚀刻方法及等离子体处理装置 |
TW110116867A TW202209488A (zh) | 2020-05-21 | 2021-05-11 | 蝕刻方法及電漿處理裝置 |
US17/318,446 US11842900B2 (en) | 2020-05-21 | 2021-05-12 | Etching method and plasma processing apparatus |
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US6531404B1 (en) | 2000-08-04 | 2003-03-11 | Applied Materials Inc. | Method of etching titanium nitride |
JP4783169B2 (ja) * | 2006-02-13 | 2011-09-28 | パナソニック株式会社 | ドライエッチング方法、微細構造形成方法、モールド及びその製造方法 |
JP4764241B2 (ja) | 2006-04-17 | 2011-08-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
US7682979B2 (en) * | 2006-06-29 | 2010-03-23 | Lam Research Corporation | Phase change alloy etch |
KR100854926B1 (ko) * | 2007-06-25 | 2008-08-27 | 주식회사 동부하이텍 | 반도체 소자용 마스크 |
US10573527B2 (en) * | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10862031B2 (en) * | 2019-03-01 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to effectively suppress heat dissipation in PCRAM devices |
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CN113707551A (zh) | 2021-11-26 |
TW202209488A (zh) | 2022-03-01 |
US20210366724A1 (en) | 2021-11-25 |
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