JP2021044385A - 熱媒体循環システム及び基板処理装置 - Google Patents
熱媒体循環システム及び基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 13
- 239000011347 resin Substances 0.000 claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 33
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000012466 permeate Substances 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 55
- 239000012267 brine Substances 0.000 description 20
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 20
- 238000010586 diagram Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L9/00—Rigid pipes
- F16L9/18—Double-walled pipes; Multi-channel pipes or pipe assemblies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
Description
最初に、実施形態に係る基板処理装置の構成について説明する。基板処理装置は、ウエハ等の基板に対して所定の基板処理を行う装置である。本実施形態では、基板処理装置を、基板としてウエハWに対してプラズマエッチング等の処理を行うプラズマ処理装置10とした場合を例に説明する。図1は、実施形態に係るプラズマ処理装置10の概略的な構成の一例を示す断面図である。図1に示すプラズマ処理装置10は、容量結合プラズマ(CCP:Capacitively Coupled Plasma)を用いたプラズマエッチング装置として構成される。プラズマ処理装置10は、略円筒状の処理容器12を備えている。処理容器12は、例えば、アルミニウムから構成されている。また、処理容器12の表面は、陽極酸化処理が施されている。
12 処理容器
12a 上部筐体
30 シャワーヘッド
92 流路
110 循環流路
111 配管
131 カバー
131a 給気口
132 排気管
133 閉塞部材
133a バッファ空間
Claims (9)
- 温度制御対象物に熱媒体を循環させる循環流路の少なくとも一部を構成する、樹脂製の配管と、
前記配管の外周面を囲むカバーと、
前記配管と前記カバーとの間の空間に接続され、前記配管を透過して該空間へ放出される熱媒体を排気する排気管と、
を有し、
前記カバーは、前記排気管からの熱媒体の排気と並行して、前記配管と前記カバーとの間の空間へ空気を取り込む給気口を有する、熱媒体循環システム。 - 前記カバーは、樹脂により形成された管状部材である請求項1に記載の熱媒体循環システム。
- 前記排気管は、前記カバーの一端側に設けられた、前記配管と前記カバーとの間の空間を閉塞する閉塞部材に接続され、前記閉塞部材に形成されたバッファ空間を介して前記空間に連通し、
前記カバーは、前記閉塞部材が設けられた一端側とは反対側に位置する他端側に、前記給気口を有する、
請求項2に記載の熱媒体循環システム。 - 前記給気口は、前記カバーの他端が開放されて形成される開放端である、請求項3に記載の熱媒体循環システム。
- 前記温度制御対象物を覆う筐体をさらに有し、
前記配管及び前記カバーは、前記筐体と前記温度制御対象物とで囲まれた空間内に配置され、
前記筐体と前記温度制御対象物とで囲まれた空間内の圧力は、陽圧に維持される、請求項1〜4のいずれか一つに記載の熱媒体循環システム。 - 前記カバーは、前記温度制御対象物を覆う筐体である請求項1に記載の熱媒体循環システム。
- 前記配管は、前記温度制御対象物の内部に形成された流路に接続され、前記流路に熱媒体を循環させる、請求項1〜6のいずれか一つに記載の熱媒体循環システム。
- 前記熱媒体は、炭素を含有する液体である、請求項1〜7のいずれか一つに記載の熱媒体循環システム。
- 熱媒体循環システムを有する基板処理装置であって、
前記熱媒体循環システムは、
温度制御対象物に熱媒体を循環させる循環流路の少なくとも一部を構成する、樹脂製の配管と、
前記配管の外周面を囲むカバーと、
前記配管と前記カバーとの間の空間に接続され、前記配管を透過して該空間へ放出される熱媒体を排気する排気管と、
を有し、
前記カバーは、前記排気管からの熱媒体の排気と並行して、前記配管と前記カバーとの間の空間へ空気を取り込む給気口を有する、基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2019165388A JP7273665B2 (ja) | 2019-09-11 | 2019-09-11 | 熱媒体循環システム及び基板処理装置 |
TW109129547A TW202127564A (zh) | 2019-09-11 | 2020-08-28 | 熱媒循環系統及基板處理裝置 |
KR1020200110941A KR20210031379A (ko) | 2019-09-11 | 2020-09-01 | 열매체 순환 시스템 및 기판 처리 장치 |
US17/011,668 US20210074519A1 (en) | 2019-09-11 | 2020-09-03 | Heat medium circulation system and substrate processing apparatus |
CN202010917456.XA CN112490102A (zh) | 2019-09-11 | 2020-09-03 | 热介质循环***和基板处理装置 |
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JP2019165388A JP7273665B2 (ja) | 2019-09-11 | 2019-09-11 | 熱媒体循環システム及び基板処理装置 |
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JP2021044385A true JP2021044385A (ja) | 2021-03-18 |
JP7273665B2 JP7273665B2 (ja) | 2023-05-15 |
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US (1) | US20210074519A1 (ja) |
JP (1) | JP7273665B2 (ja) |
KR (1) | KR20210031379A (ja) |
CN (1) | CN112490102A (ja) |
TW (1) | TW202127564A (ja) |
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US11646183B2 (en) | 2020-03-20 | 2023-05-09 | Applied Materials, Inc. | Substrate support assembly with arc resistant coolant conduit |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS645639U (ja) * | 1987-06-25 | 1989-01-12 | ||
JPH0694338A (ja) * | 1992-09-14 | 1994-04-05 | Sanyo Electric Co Ltd | アンモニア吸収冷凍機の安全装置 |
JPH0634237U (ja) * | 1992-09-30 | 1994-05-06 | 住友金属工業株式会社 | プラズマ装置 |
JP2001297967A (ja) * | 2000-04-13 | 2001-10-26 | Canon Inc | 配管およびそれを用いた位置決め装置 |
JP2004022820A (ja) * | 2002-06-17 | 2004-01-22 | Shibaura Mechatronics Corp | ドライエッチング装置およびその反応ガス供給方法 |
KR101412507B1 (ko) * | 2013-02-06 | 2014-06-26 | 공주대학교 산학협력단 | 유기금속화합물 가스 공급 장치 |
KR200474857Y1 (ko) * | 2013-06-04 | 2014-10-22 | 우성이엔디주식회사 | 반도체 공정용 순수냉각장치 |
US20190385813A1 (en) * | 2018-06-18 | 2019-12-19 | Samsung Electronics Co., Ltd. | Temperature controller, temperature measurer, and plasma processing apparatus including the same |
-
2019
- 2019-09-11 JP JP2019165388A patent/JP7273665B2/ja active Active
-
2020
- 2020-08-28 TW TW109129547A patent/TW202127564A/zh unknown
- 2020-09-01 KR KR1020200110941A patent/KR20210031379A/ko unknown
- 2020-09-03 US US17/011,668 patent/US20210074519A1/en not_active Abandoned
- 2020-09-03 CN CN202010917456.XA patent/CN112490102A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS645639U (ja) * | 1987-06-25 | 1989-01-12 | ||
JPH0694338A (ja) * | 1992-09-14 | 1994-04-05 | Sanyo Electric Co Ltd | アンモニア吸収冷凍機の安全装置 |
JPH0634237U (ja) * | 1992-09-30 | 1994-05-06 | 住友金属工業株式会社 | プラズマ装置 |
JP2001297967A (ja) * | 2000-04-13 | 2001-10-26 | Canon Inc | 配管およびそれを用いた位置決め装置 |
JP2004022820A (ja) * | 2002-06-17 | 2004-01-22 | Shibaura Mechatronics Corp | ドライエッチング装置およびその反応ガス供給方法 |
KR101412507B1 (ko) * | 2013-02-06 | 2014-06-26 | 공주대학교 산학협력단 | 유기금속화합물 가스 공급 장치 |
KR200474857Y1 (ko) * | 2013-06-04 | 2014-10-22 | 우성이엔디주식회사 | 반도체 공정용 순수냉각장치 |
US20190385813A1 (en) * | 2018-06-18 | 2019-12-19 | Samsung Electronics Co., Ltd. | Temperature controller, temperature measurer, and plasma processing apparatus including the same |
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Publication number | Publication date |
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TW202127564A (zh) | 2021-07-16 |
CN112490102A (zh) | 2021-03-12 |
JP7273665B2 (ja) | 2023-05-15 |
KR20210031379A (ko) | 2021-03-19 |
US20210074519A1 (en) | 2021-03-11 |
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