JP2021009895A - 面発光レーザ - Google Patents
面発光レーザ Download PDFInfo
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- JP2021009895A JP2021009895A JP2019122048A JP2019122048A JP2021009895A JP 2021009895 A JP2021009895 A JP 2021009895A JP 2019122048 A JP2019122048 A JP 2019122048A JP 2019122048 A JP2019122048 A JP 2019122048A JP 2021009895 A JP2021009895 A JP 2021009895A
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- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
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- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
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- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
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- H01S5/00—Semiconductor lasers
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- Condensed Matter Physics & Semiconductors (AREA)
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- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
最初に本開示の実施態様を列記して説明する。以下の説明では、同一または対応する要素には同一の符号を付し、それらについて同じ説明は繰り返さない。
以下、本開示の一実施形態について詳細に説明するが、本実施形態はこれらに限定されるものではない。
次に、本実施形態における面発光レーザについて図2及び図3に基づき説明する。図2は本実施形態における面発光レーザの上面図であり、図3は、図2の一点鎖線2A−2Bに沿って切断した断面図である。本実施形態の面発光レーザは、基板20の上に、第1の下部DBR(Distributed Bragg Reflector)層121、下部コンタクト層122、第2の下部DBR層123、活性層124、上部DBR層125、上部コンタクト層127が順に形成されている。本願においては、第2の下部DBR層123、または、第1の下部DBR層121及び第2の下部DBR層123を下部反射鏡層と記載し、上部DBR層125を上部反射鏡層と記載する場合がある。
次に、本実施形態における面発光レーザの製造方法について、図6から図10に基づき説明する。
30 メサ
31 光出射窓
32 溝
41 p電極
42 配線
43 p電極パッド
51 n電極
52 配線
53 n電極パッド
121 第1の下部DBR層
122 下部コンタクト層
123 第2の下部DBR層
124 活性層
125 上部DBR層
126 電流狭窄構造
126a 酸化領域
126b アパーチャ領域
127 上部コンタクト層
130 絶縁膜
131 第1の絶縁膜
132 第2の絶縁膜
133 第3の絶縁膜
140 第1のPt層
141 Ptを含む合金層
142 Ti層
143 第2のPt層
144 Au層
162 マスク
921 上部反射鏡層
922 上部コンタクト層
931 Ti層
932 Pt層
933 Au層
Claims (5)
- 基板と、
前記基板の上に下部反射鏡層、活性層、上部反射鏡層、上部コンタクト層が順に積層された半導体層のメサと、
前記上部コンタクト層の上に設けられた電極と、
を有し、
前記上部コンタクト層は、GaAsを含んでおり、
前記電極は、前記上部コンタクト層と接する層がPtを含む合金層である面発光レーザ。 - 前記Ptを含む合金層の厚さは5nm以上、100nm以下である請求項1に記載の面発光レーザ。
- 前記上部コンタクト層の厚さは、10nm以上、200nm以下である請求項1又は請求項2に記載の面発光レーザ。
- 前記電極は、前記合金層から順にTi層、Pt層が積層されている
請求項1から請求項3のいずれか一項に記載の面発光レーザ。 - 前記電極の形状は円環状であって、
前記電極の内側がレーザ光を出射する光出射窓である請求項1から請求項4のいずれか1項に記載の面発光レーザ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2019122048A JP2021009895A (ja) | 2019-06-28 | 2019-06-28 | 面発光レーザ |
US16/859,058 US11329453B2 (en) | 2019-06-28 | 2020-04-27 | Surface emitting laser |
CN202010578645.9A CN112152073A (zh) | 2019-06-28 | 2020-06-23 | 面发射激光器 |
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JP2019122048A JP2021009895A (ja) | 2019-06-28 | 2019-06-28 | 面発光レーザ |
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JP2021009895A true JP2021009895A (ja) | 2021-01-28 |
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JP2019122048A Pending JP2021009895A (ja) | 2019-06-28 | 2019-06-28 | 面発光レーザ |
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US (1) | US11329453B2 (ja) |
JP (1) | JP2021009895A (ja) |
CN (1) | CN112152073A (ja) |
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US11848402B2 (en) * | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
CN113285353A (zh) * | 2021-07-23 | 2021-08-20 | 华芯半导体研究院(北京)有限公司 | 减少via开窗刻蚀损伤的方法和vcsel芯片 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010036009A1 (en) * | 2000-02-17 | 2001-11-01 | Xun Li | Surface-emitting semiconductor optical amplifier |
JP2005167196A (ja) * | 2003-11-11 | 2005-06-23 | Sharp Corp | 半導体レーザ素子およびその製造方法および光ディスク装置および光伝送システム |
JP2007207804A (ja) * | 2006-01-31 | 2007-08-16 | Hitachi Ltd | 光半導体素子 |
Family Cites Families (6)
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JP3087671B2 (ja) * | 1996-12-12 | 2000-09-11 | 日本電気株式会社 | バイポーラトランジスタおよびその製造方法 |
US6392262B1 (en) * | 1999-01-28 | 2002-05-21 | Nec Corporation | Compound semiconductor device having low-resistive ohmic contact electrode and process for producing ohmic electrode |
US6744805B2 (en) * | 2000-04-05 | 2004-06-01 | Nortel Networks Limited | Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers |
JP5653625B2 (ja) * | 2009-01-08 | 2015-01-14 | 古河電気工業株式会社 | 半導体発光素子およびその製造方法 |
JP2012089611A (ja) * | 2010-10-18 | 2012-05-10 | Sumitomo Electric Ind Ltd | 面発光型半導体素子の製造方法 |
JP2019033210A (ja) | 2017-08-09 | 2019-02-28 | 住友電気工業株式会社 | 面発光レーザ |
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2019
- 2019-06-28 JP JP2019122048A patent/JP2021009895A/ja active Pending
-
2020
- 2020-04-27 US US16/859,058 patent/US11329453B2/en active Active
- 2020-06-23 CN CN202010578645.9A patent/CN112152073A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010036009A1 (en) * | 2000-02-17 | 2001-11-01 | Xun Li | Surface-emitting semiconductor optical amplifier |
JP2005167196A (ja) * | 2003-11-11 | 2005-06-23 | Sharp Corp | 半導体レーザ素子およびその製造方法および光ディスク装置および光伝送システム |
JP2007207804A (ja) * | 2006-01-31 | 2007-08-16 | Hitachi Ltd | 光半導体素子 |
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US20200412095A1 (en) | 2020-12-31 |
CN112152073A (zh) | 2020-12-29 |
US11329453B2 (en) | 2022-05-10 |
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