JP2021005664A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2021005664A JP2021005664A JP2019119434A JP2019119434A JP2021005664A JP 2021005664 A JP2021005664 A JP 2021005664A JP 2019119434 A JP2019119434 A JP 2019119434A JP 2019119434 A JP2019119434 A JP 2019119434A JP 2021005664 A JP2021005664 A JP 2021005664A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 354
- 239000000758 substrate Substances 0.000 claims abstract description 146
- 229910052751 metal Inorganic materials 0.000 claims description 77
- 239000002184 metal Substances 0.000 claims description 77
- 230000005669 field effect Effects 0.000 claims description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 37
- 229920005591 polysilicon Polymers 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 76
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 43
- 229910010271 silicon carbide Inorganic materials 0.000 description 41
- 239000011229 interlayer Substances 0.000 description 40
- 230000036413 temperature sense Effects 0.000 description 27
- 238000009792 diffusion process Methods 0.000 description 26
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 229910005883 NiSi Inorganic materials 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- 239000010936 titanium Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 14
- 230000003071 parasitic effect Effects 0.000 description 14
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- 230000001681 protective effect Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000001052 transient effect Effects 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
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- 239000002356 single layer Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
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- 239000010949 copper Substances 0.000 description 4
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- 238000000926 separation method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
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- 238000005520 cutting process Methods 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-silicon-copper Chemical compound 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 230000005685 electric field effect Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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Abstract
Description
実施の形態1にかかる半導体装置は、シリコン(Si)よりもバンドギャップが広い半導体(ワイドバンドギャップ半導体)を半導体材料として用いて構成される。実施の形態1にかかる半導体装置の構造について、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いた場合を例に説明する。図1は、実施の形態1にかかる半導体装置を半導体基板のおもて面側から見たレイアウトを示す平面図である。図1では、破線で示す2つの矩形間の部分が第1ゲートランナー23である。第2ゲートランナー83を連続する1本の太線で示す。
次に、実施の形態2にかかる半導体装置について説明する。図15は、実施の形態2にかかる半導体装置を半導体基板のおもて面側から見たレイアウトを示す平面図である。実施の形態2にかかる半導体装置20’が実施の形態1にかかる半導体装置20(図1〜6参照)と異なる点は、第2ゲートランナー83’、内蔵抵抗81’および内蔵コイル82’を、第1ゲートランナー23と半導体基板10の端部との間に配置した点である。
1a メイン有効領域
1b メイン無効領域
2 エッジ終端領域
10 半導体基板
11 メイン半導体素子
12 電流センス部
12a センス有効領域
12b センス無効領域
13 抵抗体
14,14a,14b メイン半導体素子の寄生ダイオード
15 電流センス部の寄生ダイオード
36a,36b p++型コンタクト領域
20,20’ 半導体装置
21a ソースパッド(電極パッド)
21b ゲートパッド(電極パッド)
22 OCパッド(電極パッド)
23 メイン半導体素子用のゲートランナー(第1ゲートランナー)
23a,23b ポリシリコン連結部
23c 第1,2ゲートランナー同士の連結箇所
31 n+型出発基板
32 n-型ドリフト領域
32b n-型領域
33a,33b n型電流拡散領域
34a,34b,34b’ p型ベース領域
34c p型領域
35a,35b n+型ソース領域
37a,37b トレンチ
38a,38b ゲート絶縁膜
39a,39b ゲート電極
40,85 層間絶縁膜
40a,40b コンタクトホール
41a,41b NiSi膜
42a,42b 第1TiN膜
43a,43b 第1Ti膜
44a,44b 第2TiN膜
45a,45b 第2Ti膜
46a,46b バリアメタル
47a,47b めっき膜
48a,48b 端子ピン
49a,49b 第1保護膜
50a,50c 第2保護膜
51 ドレイン電極
61a,61b,62a,62b,62b’,91,93 p+型領域
71 n-型炭化珪素層
71a n-型炭化珪素層の厚さを増した部分
72 p型炭化珪素層
80 フィールド絶縁膜
81,81’ 内蔵抵抗
82,82’ 内蔵コイル
83,83’ 電流センス部用のゲートランナー(第2ゲートランナー)
83a 第2ゲートランナーの第1部分
83b 第2ゲートランナーの第2部分
83c 第2ゲートランナーの第1,2部分間の隙間
83d’,83e’ 第2ゲートランナーの、第1ゲートランナー上を通る箇所
84 第2ゲート金属層
85a,85b 層間絶縁膜の一部
86,86a,86b,86c,87,87a,87b 金属膜
92,94 n型領域
GND 接地点
X 半導体チップのおもて面に平行な方向(第1方向)
Y 半導体チップのおもて面に平行でかつ第1方向と直交する方向(第2方向)
Z 深さ方向
d1 p+型領域の深さ
d2 p+型領域間の距離
d3 n型領域の深さ
t11 n-型炭化珪素層の、n+型出発基板上に最初に積層する厚さ
t12 n-型炭化珪素層の、厚さを増した部分の厚さ
t13 p型炭化珪素層の厚さ
w1 エッジ終端領域の幅
w2 ゲートパッドとOCパッドとの間の距離
Claims (9)
- シリコンよりもバンドギャップの広い半導体からなる半導体基板と、
前記半導体基板に設けられた第1絶縁ゲート型電界効果トランジスタと、
前記半導体基板の第1主面上に設けられた、前記第1絶縁ゲート型電界効果トランジスタの第1ソースパッドと、
前記半導体基板に設けられ、前記第1絶縁ゲート型電界効果トランジスタと同じセル構造の複数のセルを、前記第1絶縁ゲート型電界効果トランジスタよりも少ない個数で有する第2絶縁ゲート型電界効果トランジスタと、
前記半導体基板の第1主面上に前記第1ソースパッドと離れて設けられた、前記第2絶縁ゲート型電界効果トランジスタの第2ソースパッドと、
前記第1絶縁ゲート型電界効果トランジスタのセルおよび前記第1ソースパッドが配置された第1素子領域と、前記第2絶縁ゲート型電界効果トランジスタのセルおよび前記第2ソースパッドが配置された第2素子領域と、を含む活性領域と、
前記第1素子領域および前記第2素子領域に隣接して、前記活性領域の周囲を囲む終端領域と、
前記終端領域において前記半導体基板の第1主面上に設けられ、前記第1絶縁ゲート型電界効果トランジスタのすべての第1ゲート電極が接続された第1ゲートランナーと、
前記終端領域において前記半導体基板の第1主面上に設けられ、前記第2絶縁ゲート型電界効果トランジスタのすべての第2ゲート電極が接続された第2ゲートランナーと、
前記第2素子領域において前記半導体基板の第1主面上に前記第2ソースパッドと離れて設けられ、前記第1ゲートランナーを介して前記第1ゲート電極が電気的に接続されたゲートパッドと、
前記半導体基板の第2主面にオーミック接触する、前記第1絶縁ゲート型電界効果トランジスタおよび前記第2絶縁ゲート型電界効果トランジスタに共通のドレイン電極と、
を備え、
前記第2ゲートランナーは、一方の端部が前記第2ゲート電極に電気的に接続され、前記第2ゲート電極との電気的な接続箇所から前記第1素子領域と前記終端領域との境界に沿って延在し、他方の端部が前記第1ゲートランナーに接続されており、
前記第2ゲートランナーおよび前記第1ゲートランナーを介して、前記第2ゲート電極が前記ゲートパッドに電気的に接続されていることを特徴とする半導体装置。 - 前記第2ゲートランナーは、前記第1素子領域と前記終端領域との境界に沿って延在して前記活性領域の周囲を囲み、両端部が前記第2素子領域と前記終端領域との境界で終端し、一方の端部が前記第2ゲート電極に電気的に接続され、他方の端部が前記ゲートパッドと前記第2ソースパッドとの間で前記第1ゲートランナーに接続されていることを特徴とする請求項1に記載の半導体装置。
- 前記終端領域において前記半導体基板の第1主面上に設けられ、前記第2ゲートランナーを介して、前記ゲートパッドと前記第2ゲート電極との間に直列に接続されたゲート抵抗部をさらに備えることを特徴とする請求項1または2に記載の半導体装置。
- 前記第2ゲートランナーはポリシリコン層であり、
前記ゲート抵抗部は、前記第2ゲートランナーの一部の前記ポリシリコン層で構成されていることを特徴とする請求項3に記載の半導体装置。 - 前記終端領域において前記半導体基板の第1主面上に設けられ、前記第2ゲートランナーを介して、前記ゲートパッドと前記第2ゲート電極との間に直列に接続されたコイル部をさらに備えることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記コイル部は、前記終端領域において前記半導体基板の第1主面上に設けられ、両端部が前記第2ゲートランナーに接続された螺旋状の金属膜で構成されていることを特徴とする請求項5に記載の半導体装置。
- 前記第1ゲートランナーは、前記活性領域と前記終端領域との境界に沿って延在して前記活性領域の周囲を囲み、
前記第2ゲートランナーは、前記第1ゲートランナーと前記活性領域との間に設けられていることを特徴とする請求項1〜6のいずれか一つに記載の半導体装置。 - 前記半導体基板の、前記第2ソースパッドで覆われた領域の一部の領域に、前記第2絶縁ゲート型電界効果トランジスタのセルが配置されていることを特徴とする請求項1〜7のいずれか一つに記載の半導体装置。
- 前記第2絶縁ゲート型電界効果トランジスタは、前記第1絶縁ゲート型電界効果トランジスタに流れる過電流を検出することを特徴とする請求項1〜8のいずれか一つに記載の半導体装置。
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