JP2020129666A - 太陽電池内の相対的ドーパント濃度レベル - Google Patents
太陽電池内の相対的ドーパント濃度レベル Download PDFInfo
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- 239000002019 doping agent Substances 0.000 title claims abstract description 184
- 238000009792 diffusion process Methods 0.000 claims abstract description 149
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 125
- 229920005591 polysilicon Polymers 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 230000005855 radiation Effects 0.000 claims abstract description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 21
- 229910052796 boron Inorganic materials 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 69
- 230000008569 process Effects 0.000 abstract description 27
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 140
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 74
- 239000000377 silicon dioxide Substances 0.000 description 37
- 235000012239 silicon dioxide Nutrition 0.000 description 37
- 238000005215 recombination Methods 0.000 description 13
- 230000006798 recombination Effects 0.000 description 13
- 238000007639 printing Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000005388 borosilicate glass Substances 0.000 description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000005360 phosphosilicate glass Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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Abstract
Description
Claims (10)
- 通常動作中には太陽放射を受光するために太陽に面する前側及び前記前側とは反対側の裏側を含む基板と、
前記基板の前記裏側上の誘電体層と、
前記誘電体層上に形成されたポリシリコン層と、
前記ポリシリコン層内に形成されたP型拡散領域及びN型拡散領域であり、前記P型拡散領域は、第1のドーパント濃度レベルを有する第1のドーパント源を含むP型ドープ領域から形成され、前記N型拡散領域は、前記第1のドーパント濃度レベルより高い第2のドーパント濃度レベルを有する第2のドーパント源を含むN型ドープ領域から形成され、パッシベーション領域が前記P型拡散領域及び前記N型拡散領域の物理的界面に配置される、前記P型拡散領域及び前記N型拡散領域と、
前記基板の前記裏側上の前記P型ドープ領域から形成された前記P型拡散領域に結合される第1の金属コンタクトフィンガと、
前記基板の前記裏側上の前記N型ドープ領域から形成された前記N型拡散領域に結合される第2の金属コンタクトフィンガと、
を備える太陽電池。 - 前記P型拡散領域及び前記N型拡散領域の間の前記物理的界面の両側に延びて、前記基板の前記裏側上に形成された突き合せPN接合をさらに備える、請求項1に記載の太陽電池。
- 前記突き合せPN接合は、縦方向のPN接合である、請求項2に記載の太陽電池。
- 前記P型拡散領域は、水素パッシベーションシリコンを含む、請求項1から3のいずれか一項に記載の太陽電池。
- 前記ポリシリコン層の表面、前記ポリシリコン層内の粒界、及び前記P型拡散領域と前記N型拡散領域との間の前記物理的界面で、水素パッシベーションされる、請求項1から4のいずれか一項に記載の太陽電池。
- 前記P型拡散領域は、前記N型拡散領域に横方向に隣接する、請求項1から5のいずれか一項に記載の太陽電池。
- 前記P型拡散領域の前記第1のドーパント濃度レベルは、約5E17/cm3より低い、請求項1から6のいずれか一項に記載の太陽電池。
- 前記P型拡散領域は、前記第1のドーパント濃度レベルを有するホウ素を含む、請求項1から7のいずれか一項に記載の太陽電池。
- 前記N型拡散領域は、1E20/cm3の約10%より高いドーパント濃度レベルを有するリンを含む、請求項1から8のいずれか一項に記載の太陽電池。
- 前記P型拡散領域を形成するために使用されるP型ドーパント源から、前記N型拡散領域を形成するために使用されるN型ドーパント源までの濃度比は、約1:100である、請求項1から9のいずれか一項に記載の太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US14/292,454 US20150349180A1 (en) | 2014-05-30 | 2014-05-30 | Relative dopant concentration levels in solar cells |
US14/292,454 | 2014-05-30 |
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JP2020069400A Pending JP2020129666A (ja) | 2014-05-30 | 2020-04-07 | 太陽電池内の相対的ドーパント濃度レベル |
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Country Status (8)
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US (1) | US20150349180A1 (ja) |
JP (2) | JP6690859B2 (ja) |
KR (1) | KR102554563B1 (ja) |
CN (2) | CN108987499B (ja) |
AU (1) | AU2015267299B2 (ja) |
DE (1) | DE112015002554T5 (ja) |
TW (1) | TWI660517B (ja) |
WO (1) | WO2015183703A1 (ja) |
Cited By (1)
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WO2023234627A1 (ko) * | 2022-05-30 | 2023-12-07 | 한화솔루션(주) | 탠덤 태양전지 및 이의 제조방법 |
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US10686087B2 (en) | 2016-09-19 | 2020-06-16 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
JP2019110185A (ja) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | 太陽電池の製造方法 |
KR20190128860A (ko) * | 2018-05-09 | 2019-11-19 | 엘지전자 주식회사 | 태양 전지 |
CN112510040B (zh) * | 2019-09-13 | 2023-03-24 | 杭州士兰集昕微电子有限公司 | 半导体器件及其制造方法 |
CN113871494B (zh) * | 2020-06-30 | 2024-03-15 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制作方法 |
CN116417536A (zh) * | 2021-12-29 | 2023-07-11 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制备方法 |
CN116960231A (zh) * | 2023-09-21 | 2023-10-27 | 常州亿晶光电科技有限公司 | 一种高透光性双面TOPCon电池的制备方法 |
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Also Published As
Publication number | Publication date |
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TWI660517B (zh) | 2019-05-21 |
CN108987499B (zh) | 2022-04-08 |
KR20170016880A (ko) | 2017-02-14 |
AU2015267299A1 (en) | 2016-11-24 |
US20150349180A1 (en) | 2015-12-03 |
CN106463550B (zh) | 2018-10-19 |
JP2017517147A (ja) | 2017-06-22 |
CN108987499A (zh) | 2018-12-11 |
CN106463550A (zh) | 2017-02-22 |
JP6690859B2 (ja) | 2020-04-28 |
DE112015002554T5 (de) | 2017-02-23 |
KR102554563B1 (ko) | 2023-07-11 |
WO2015183703A1 (en) | 2015-12-03 |
AU2015267299B2 (en) | 2020-03-19 |
TW201611312A (zh) | 2016-03-16 |
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