JP2020092145A - 量子カスケードレーザおよびその製造方法 - Google Patents
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Abstract
Description
前記半導体積層体は、Alを含む層を有する量子井戸領域を有しモノキャリアのサブバンド間光学遷移によりレーザ光を放出する活性層を含む。前記Alを含む層は、前記光軸に直交する断面において、前記活性層の表面に平行な方向に沿って前記活性層の外縁から内側に向かって所定の深さまで到達しかつAl酸化物を含んだ第1領域と、前記第1領域に挟まれかつAl酸化物を含まない第2領域と、を有する。
図1は、第1の実施形態にかかる量子カスケードレーザの模式断面図である。
また、図2は、第1の実施形態にかかる量子カスケードレーザのY方向相対位置に対する伝導帯エネルギー準位図、である。
発光量子井戸領域80と注入量子井戸領域81とのペアがカスケードの1段を構成し、たとえば、Y軸方向に30〜100段などが繰り返し積層されて活性層10となる。この結果、1段でサブバンド間光学遷移を生じたモノキャリア(この場合は電子)は、積層数だけ光学遷移を繰り返す。このため、リッジ高さH1は、たとえば、8μmなどと大きくなる。
縦軸は光出力(mW)、横軸は動作電流(mA)である。実線は、第1の実施形態の一例であり、リッジ幅L1が12μm、Al酸化層を含む第1領域11の幅L2が3μm、実効リッジ幅が6μm、とする。破線は、第1比較例であり、リッジ幅L1が12μm、Al酸化層は形成されないものとする。一点鎖線は、第2比較例であり、リッジ幅L1が9μm、Al酸化層が形成されないものとする。
活性層10の量子井戸領域を構成するAlを含む層が、活性層10の2つの外縁10b、10c、から内側に向かって所定深さL2となる領域がAl酸化物を含む層11に置換されている。Alを含む層がInAlAs層の場合、In酸化物をさらに生じることもある。Al酸化物を含む層は、電流狭窄領域となる。本図は、雰囲気温度が460℃で水蒸気酸化を8時間行ったリッジ導波路60の断面である。酸化が進行して、電流狭窄領域の一部に空隙部15を生じているが、光学特性に影響はない。
EDX(Energy Dispersive X-ray Spectroscopy)は、電子線照射により発生する特性X線を検出し、エネルギーを分光することにより組成分析を行う方法である。図5(a)のSTEM写真に対応して、O、Al、Ga、AsおよびInの元素分布が測定される。図5(b)の灰色の細いストライプはO元素の存在を表す。また、図5(e)の黒色の細いストライプはAsが少ないことを表し、灰色状に広がった部分はAsが多いことを表す。また、図5(c)の細いストライプを含む広い灰色の部分は、Alが広がっていることを表す。
まず、基板50上にAlを含む層を有する量子井戸領域を含む活性層10を有する半導体積層体5を結晶成長する(S100)。結晶成長には、MOCVD(Metal Organic Chemical Vapor Deposition)法やMBE(Molecular Beam Epitaxy )法などを用いることができる。
縦軸は酸化深さ(μm)、横軸は酸化時間の平方根(h1/2)、である。活性層10を構成する量子井戸を構成するAlを含む層をAl0.67In0.33Asとする。雰囲気温度を460℃、酸化時間を6〜15時間(h)、水分量を100g/hとした。酸化深さは、酸化時間の平方根に対して単調に増大する。
図8(a)はpn接合型面発光レーザの模式断面図、図8(b)はそのエネルギー準位図、である。
pn接合型面発光レーザは、図8(a)に表すように、裏面電極170、基板150、AlAs層113、Al酸化層111、下部クラッド層120、活性層110、上部クラッド層130、上部電極164などを有する。また、図8(b)に表すように、活性層110は、数層の井戸を含む量子井戸領域を有する。ホールと電子とは、量子井戸層領域で再結合し、バンドギャップエネルギーに対応するバンドギャップ波長でレーザ発振する。
Claims (8)
- Alを含む層を有する量子井戸領域を有しモノキャリアのサブバンド間光学遷移によりレーザ光を放出する活性層を含み、かつリッジ導波路が設けられた半導体積層体を備え、
前記レーザ光の光軸は、前記リッジ導波路の延在する方向に平行であり、
前記Alを含む層は、前記光軸に直交する断面において、前記活性層の表面に平行な方向に沿って前記活性層の外縁から内側に向かって所定の深さまで到達しかつAl酸化物を含んだ第1領域と、前記第1領域に挟まれかつAl酸化物を含まない第2領域と、を有する、量子カスケードレーザ。 - 前記第1領域は、電流狭窄層である請求項1記載の量子カスケードレーザ。
- 基板をさらに備え、
前記半導体積層体は前記基板上に設けられた請求項1または2に記載の量子カスケードレーザ。 - 前記断面において、前記活性層の外縁は平行であるかまたは前記基板に向かって拡幅する請求項3記載の量子カスケードレーザ。
- 前記基板は、InPを含む請求項3または4に記載の量子カスケードレーザ。
- 前記量子井戸領域は、InGaAsを含む井戸層とAlInAsを含む障壁層とを有する請求項1〜5のいずれか1つに記載の量子カスケードレーザ。
- 前記半導体積層体を構成する複数の層のAlモル比のうち、前記量子井戸領域の第2領域のAlモル比が最大である、請求項1〜6のいずれか1つに記載の量子カスケードレーザ。
- サブバンド間光学遷移によってレーザ光を放出する量子カスケードレーザの製造方法であって、
基板上にAlを含む層を有する量子井戸領域を含む活性層を有する半導体積層体を結晶成長し、
前記半導体積層体のうち少なくとも前記活性層を含み所定のリッジ幅を有するリッジ導波路をパターニングし、
水蒸気雰囲気中で、所定の温度および所定の時間にて酸化処理を行い、前記活性層の表面に平行な方向に沿って前記活性層の外縁から内側に向かって所定深さまでの領域で前記Alを含む層をAl酸化層を含む層に選択的に変換する、量子カスケードレーザの製造方法。
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JP2000147284A (ja) * | 1998-11-05 | 2000-05-26 | Furukawa Electric Co Ltd:The | 半導体光導波路及びその作製方法 |
JP2001160658A (ja) * | 1999-12-02 | 2001-06-12 | Nec Corp | 半導体装置およびその製造方法 |
US20080267239A1 (en) * | 2005-10-19 | 2008-10-30 | Douglas Hall | High-Index-Contrast Waveguide |
JP2012151291A (ja) * | 2011-01-19 | 2012-08-09 | Toshiba Corp | 半導体発光装置およびその製造方法 |
JP2013038092A (ja) * | 2011-08-03 | 2013-02-21 | Toshiba Corp | 半導体レーザ装置 |
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