JP2020068309A - 面発光レーザの製造方法 - Google Patents
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Abstract
Description
最初に本願発明の実施形態の内容を列記して説明する。
(2)前記洗浄する工程は、前記基板をイソプロピルアルコールに浸漬する工程、イソプロピルアルコールの液体により置換する工程、および前記イソプロピルアルコールの蒸気中で乾燥させる工程を含んでもよい。これにより有機物を除去し、有機物による水分の凝集を抑制することができる。
(3)前記洗浄する工程の後であって前記フォトレジストをパターニングする工程の前に、前記絶縁膜の表面をHMDSで処理する工程を有してもよい。凝集水の発生を抑制するため、凝集水によるHMDSの分解および気泡の発生を抑制することができる。
(4)前記絶縁膜を形成する工程は、前記絶縁膜上にレジストパターンを形成し、前記レジストパターンを用いて前記絶縁膜の一部をエッチングする工程と、酸素アッシングにより前記レジストパターンを除去する工程とを含んでもよい。酸素アッシングにより絶縁膜に酸化膜が形成される。イソプロピルアルコールによる洗浄を行うため、酸化膜による水分の凝集を抑制することができる。
(5)前記絶縁膜は窒化シリコン膜であるとしてもよい。絶縁膜が酸化し酸化シリコン膜を形成することがある。イソプロピルアルコールによる洗浄を行うため、酸化シリコン膜による水分の凝集を抑制することができる。
(6)前記イオンが注入される深さは5μm以上であり、前記フォトレジストの厚さは10μm以上でもよい。イオンを遮蔽するため10μm以上のフォトレジストを設けると、フォトレジスト下の水分が抜けにくくなる。イソプロピルアルコールによる洗浄を行うことで、フォトレジストの下に水分が残留しにくく、フォトレジストの剥離を抑制することができる。
本発明の実施形態に係る面発光レーザの製造方法の具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。
図1(a)は実施例1に係る面発光レーザ100を例示する平面図であり、図1(b)は面発光レーザ100を例示する断面図である。
次に面発光レーザ100の製造方法を説明する。図2(a)から図8(b)は面発光レーザ100の製造方法を例示する断面図である。
BCl3/Ar=30sccm/70sccm
(またはBCl3/Cl2/Ar=20sccm/10sccm/70sccm)
ICPパワー:50W〜1000W
バイアスパワー:50W〜500W
ウェハの温度:25℃以下
図9は比較例に係る面発光レーザの製造方法を例示する断面図である。比較例ではフォトレジスト40形成前の洗浄において水を使用する。つまり、図3(a)までは実施例1と同様の工程を行い、IPAの浸漬も行う。その後、IPAの置換のために純水で洗浄を行う。またIPA雰囲気中での乾燥ではなくスピン乾燥を行う。
11、13 溝
12 下部反射鏡層
14 活性層
16 上部反射鏡層
18、24 絶縁膜
18a 酸化膜
19 メサ
20 高抵抗領域
25、27 パッド
26、28 電極
30、40 フォトレジスト
32 マーク
34 シロキサン
35 イソプロピルアルコール
36 洗浄槽
38 乾燥装置
42 マスク
100 面発光レーザ
Claims (6)
- 半導体多層膜を含む下部反射鏡層、活性層、および半導体多層膜を含む上部反射鏡層が順に形成された基板を準備する工程と、
前記上部反射鏡層の上に絶縁膜を形成する工程と、
前記絶縁膜を形成する工程の後に、イソプロピルアルコールを用いて洗浄する工程と、
前記洗浄する工程の後、前記絶縁膜の上にフォトレジストを塗布し、前記フォトレジストを露光することで前記フォトレジストをパターニングする工程と、
前記パターニングする工程の後、前記下部反射鏡層、前記活性層および前記上部反射鏡層の前記フォトレジストから露出する部分にイオン注入することで高抵抗領域を形成する工程と、を有し、
前記洗浄する工程は、前記イソプロピルアルコールの液体を用いて洗浄する工程、および前記イソプロピルアルコールの蒸気中で乾燥させる工程を含む面発光レーザの製造方法。 - 前記洗浄する工程は、前記基板をイソプロピルアルコールに浸漬する工程、イソプロピルアルコールの液体により置換する工程、および前記イソプロピルアルコールの蒸気中で乾燥させる工程を含む請求項1に記載の面発光レーザの製造方法。
- 前記洗浄する工程の後であって前記フォトレジストをパターニングする工程の前に、前記絶縁膜の表面をHMDSで処理する工程を有する請求項1または2に記載の面発光レーザの製造方法。
- 前記絶縁膜を形成する工程は、前記絶縁膜上にレジストパターンを形成し、前記レジストパターンを用いて前記絶縁膜の一部をエッチングする工程と、酸素アッシングにより前記レジストパターンを除去する工程とを含む請求項1から3のいずれか一項に記載の面発光レーザの製造方法。
- 前記絶縁膜は窒化シリコン膜である請求項1から4のいずれか一項に記載の面発光レーザの製造方法。
- 前記イオンが注入される深さは5μm以上であり、
前記フォトレジストの厚さは10μm以上である請求項1から5のいずれか一項に記載の面発光レーザの製造方法。
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JP4639249B2 (ja) * | 2008-07-31 | 2011-02-23 | キヤノン株式会社 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器 |
JP2012156495A (ja) * | 2011-01-07 | 2012-08-16 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法 |
WO2015033649A1 (ja) | 2013-09-03 | 2015-03-12 | 株式会社村田製作所 | 垂直共振器型面発光レーザおよびその製造方法 |
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JPH0513318A (ja) * | 1991-06-28 | 1993-01-22 | Nec Corp | レジスト塗布装置 |
JPH09129962A (ja) * | 1995-10-27 | 1997-05-16 | Nippon Telegr & Teleph Corp <Ntt> | 垂直共振器型半導体レーザ素子およびその製造方法 |
JPH10116809A (ja) * | 1996-10-11 | 1998-05-06 | Tadahiro Omi | 洗浄方法及び洗浄システム |
WO2005041283A1 (ja) * | 2003-10-27 | 2005-05-06 | Sumitomo Electric Industries, Ltd. | 窒化ガリウム系半導体基板と窒化ガリウム系半導体基板の製造方法 |
JP2016122711A (ja) * | 2014-12-24 | 2016-07-07 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
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