JP2020017633A - 基板処理装置、および基板処理方法 - Google Patents
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Abstract
Description
基板の凹凸パターンが形成された面を上に向けて、前記基板を保持する基板保持部と、前記基板保持部に保持されている前記基板に対し処理液を供給することにより、前記凹凸パターンの凹部に液膜を形成する液供給ユニットと、前記液膜を加熱するレーザー光線を、前記基板保持部に保持されている前記基板または前記液膜に照射する加熱ユニットと、前記加熱ユニットを制御する加熱制御部とを備え、前記加熱制御部は、前記加熱ユニットから前記基板または前記液膜に前記レーザー光線を照射することにより、前記凹部の深さ方向全体を前記処理液から露出させる。
2 基板
4 凹凸パターン
5 凹部
6 露出部
7 被覆部
8 境界部
10 基板保持部
20 回転駆動部
30 液供給ユニット
70 加熱ユニット
71 光源
72 加熱ヘッド
80 照射点移動機構
81 加熱ヘッド移動機構
90 制御部
95 回転制御部
96 液制御部
97 ガス制御部
98 加熱制御部
L1 洗浄液(処理液)
L2 リンス液(処理液)
L3 乾燥液(処理液)
Claims (13)
- 基板の凹凸パターンが形成された面を上に向けて、前記基板を保持する基板保持部と、
前記基板保持部に保持されている前記基板に対し処理液を供給することにより、前記凹凸パターンの凹部に液膜を形成する液供給ユニットと、
前記液膜を加熱するレーザー光線を、前記基板保持部に保持されている前記基板または前記液膜に照射する加熱ユニットと、
前記加熱ユニットを制御する加熱制御部とを備え、
前記加熱制御部は、前記加熱ユニットから前記基板または前記液膜に前記レーザー光線を照射することにより、前記凹部の深さ方向全体を前記処理液から露出させる、基板処理装置。 - 前記加熱ユニットは、前記レーザー光線の光源と、前記基板保持部に保持されている前記基板または前記液膜に前記レーザー光線の照射点を形成する加熱ヘッドと、前記照射点を移動させる照射点移動機構とを有し、
前記加熱制御部は、前記基板または前記液膜における前記照射点の位置を移動させることにより、前記凹凸パターンの前記処理液から露出する露出部を拡大する、請求項1に記載の基板処理装置。 - 前記照射点移動機構は、前記加熱ヘッドを移動させることにより、前記照射点を移動させる加熱ヘッド移動機構を含む、請求項2に記載の基板処理装置。
- 前記加熱ヘッドは、前記基板の径方向に複数配列され、
前記照射点移動機構は、複数の前記加熱ヘッドのそれぞれを作動状態と停止状態とに切り替えることにより、前記基板の径方向に前記照射点を移動させる切替機構を含む、請求項2または3に記載の基板処理装置。 - 前記基板保持部を回転させる回転駆動部と、
前記回転駆動部を制御する回転制御部とを備え、
前記回転制御部が前記基板保持部と共に前記基板を回転させながら、前記加熱制御部が前記照射点を前記基板の径方向内側から前記基板の径方向外側に移動させる、請求項2〜4のいずれか1項に記載の基板処理装置。 - 前記加熱制御部は、前記照射点を前記基板の径方向内側から前記基板の径方向外側に移動させるほど、前記光源の出力を大きくする、請求項5に記載の基板処理装置。
- 前記加熱制御部は、前記照射点を前記基板の径方向内側から前記基板の径方向外側に移動させるほど、単位時間に占める前記レーザー光線を照射する時間の割合であるデューティー比を大きくする、請求項5または6に記載の基板処理装置。
- 前記加熱制御部は、前記照射点を前記基板の径方向内側から前記基板の径方向外側に移動させるほど、前記照射点の大きさを小さくする、請求項5〜7のいずれか1項に記載の基板処理装置。
- 前記加熱制御部は、前記照射点を前記基板の径方向内側から前記基板の径方向外側に移動させるほど、前記照射点における前記レーザー光線のパワーが閾値以上である範囲が狭くなるように、前記照射点における前記レーザー光線のパワー分布を変更する、請求項5〜8のいずれか1項に記載の基板処理装置。
- 前記液供給ユニットは、前記処理液を吐出する液吐出ノズルと、前記液吐出ノズルを移動させる液吐出ノズル移動機構とを有し、
前記液供給ユニットを制御する液制御部を備え、
前記液制御部は、前記液吐出ノズルから前記処理液を吐出すると共に、前記基板の径方向内側から前記基板の径方向外側に前記液吐出ノズルを移動させる、請求項1〜9のいずれか1項に記載の基板処理装置。 - 前記液供給ユニットは、室温の前記処理液を前記基板に吐出する液吐出ノズルを有する、請求項1〜10のいずれか1項に記載の基板処理装置。
- 基板の凹凸パターンが形成された面を上に向けて保持すると共に、前記基板に対し上方から処理液を供給することで、前記凹凸パターンの凹部に液膜を形成する工程と、
前記凹部の深さ方向全体が前記処理液から露出する露出部を形成する工程とを有し、
前記露出部を形成する工程は、前記液膜を加熱するレーザー光線を、前記基板または前記液膜に照射することにより、前記凹部の深さ方向全体を前記処理液から露出させる工程を含む、基板処理方法。 - 前記露出部を形成する工程は、前記基板または前記液膜に前記レーザー光線の照射点を形成する工程を有し、
前記基板または前記液膜における前記照射点の位置を移動させることにより、前記露出部を拡大する工程を有する、請求項12に記載の基板処理方法。
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JP2018139747A JP7175119B2 (ja) | 2018-07-25 | 2018-07-25 | 基板処理装置、および基板処理方法 |
TW108125760A TWI829725B (zh) | 2018-07-25 | 2019-07-22 | 基板處理裝置及基板處理方法 |
CN201910670107.XA CN110783226B (zh) | 2018-07-25 | 2019-07-24 | 基片处理装置和基片处理方法 |
KR1020190089525A KR20200011892A (ko) | 2018-07-25 | 2019-07-24 | 기판 처리 장치, 및 기판 처리 방법 |
US16/522,246 US11469116B2 (en) | 2018-07-25 | 2019-07-25 | Substrate processing apparatus and substrate processing method |
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Cited By (3)
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JP2021141086A (ja) * | 2020-02-28 | 2021-09-16 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7465164B2 (ja) | 2020-07-08 | 2024-04-10 | 株式会社Screenホールディングス | 基板処理方法 |
US12042813B2 (en) | 2019-12-27 | 2024-07-23 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
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