JP2019519150A - エンハンスメントモードfetドライバic - Google Patents
エンハンスメントモードfetドライバic Download PDFInfo
- Publication number
- JP2019519150A JP2019519150A JP2018560037A JP2018560037A JP2019519150A JP 2019519150 A JP2019519150 A JP 2019519150A JP 2018560037 A JP2018560037 A JP 2018560037A JP 2018560037 A JP2018560037 A JP 2018560037A JP 2019519150 A JP2019519150 A JP 2019519150A
- Authority
- JP
- Japan
- Prior art keywords
- gate driver
- circuit
- enhancement mode
- transistor
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001360 synchronised effect Effects 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims 3
- 230000007257 malfunction Effects 0.000 claims 2
- 230000002265 prevention Effects 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 46
- 229910002601 GaN Inorganic materials 0.000 description 45
- 239000003990 capacitor Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/0406—Modifications for accelerating switching in composite switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
- H03K3/0233—Bistable circuits
- H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computing Systems (AREA)
- Mathematical Physics (AREA)
- General Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Claims (6)
- エンハンスメントモードGaN電界効果トランジスタを駆動する集積ゲートドライバ回路であって、
ゲートドライバと、
前記ゲートドライバへ接続された低電圧誤作動防止回路と
を単一チップに完全に集積されて有し、
前記ゲートドライバは、
論理インバータ回路と、
入力部及び出力部を備え、前記入力部での接地基準0〜5Vデジタル信号を前記出力部での0〜10Vデジタル信号に変換するレベルシフタ回路と、
FETを駆動する出力段と
を有し、
前記低電圧誤作動防止回路は、
所定の電圧基準を生成する電圧基準回路と、
前記電圧基準回路の出力を受け、供給電圧が前記所定の電圧基準を下回る場合に前記ゲートドライバの動作を阻止するコンパレータと
を有する、
集積ゲートドライバ回路。 - 当該回路内の全てのトランジスタは、エンハンスメントモードGaN電界効果トランジスタである、
請求項1に記載の集積ゲートドライバ回路。 - 駆動される前記エンハンスメントモードGaN電界効果トランジスタを更に有する
請求項2に記載の集積ゲートドライバ回路。 - 前記出力段は、ハイサイド・エンハンスメントモードGaNトランジスタとローサイド・エンハンスメントモードGaNトランジスタとから形成されたハーフブリッジ回路を有し、前記ハイサイド・エンハンスメントモードGaNトランジスタは、前記ローサイド・エンハンスメントモードGaNトランジスタに対して反転されている、
請求項1に記載の集積ゲートドライバ回路。 - 同期ブートストラップFET供給ゲートドライバ回路を更に有する
請求項1に記載の集積ゲートドライバ回路。 - 前記同期ブートストラップFET供給ゲートドライバ回路は、前記出力段を伴わない前記ゲートドライバと実質的に同じである、
請求項5に記載の集積ゲートドライバ回路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662341318P | 2016-05-25 | 2016-05-25 | |
US62/341,318 | 2016-05-25 | ||
PCT/US2017/034461 WO2017205618A1 (en) | 2016-05-25 | 2017-05-25 | Enhancement mode fet gate driver ic |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019519150A true JP2019519150A (ja) | 2019-07-04 |
JP7080185B2 JP7080185B2 (ja) | 2022-06-03 |
Family
ID=60411907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018560037A Active JP7080185B2 (ja) | 2016-05-25 | 2017-05-25 | エンハンスメントモードfetドライバic |
Country Status (7)
Country | Link |
---|---|
US (1) | US10243546B2 (ja) |
JP (1) | JP7080185B2 (ja) |
KR (1) | KR102109851B1 (ja) |
CN (1) | CN109155627B (ja) |
DE (1) | DE112017002655B4 (ja) |
TW (1) | TWI641218B (ja) |
WO (1) | WO2017205618A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11056875B2 (en) * | 2018-02-23 | 2021-07-06 | Maxim Integrated Products, Inc. | Systems and methods for gate driver with field-adjustable UVLO |
CN108768145B (zh) * | 2018-05-25 | 2019-07-02 | 电子科技大学 | 适用于GaN功率开关器件的高速半桥栅驱动电路 |
TWI732280B (zh) * | 2018-08-28 | 2021-07-01 | 美商高效電源轉換公司 | 串級自舉式GaN功率開關及驅動器 |
TWI716980B (zh) * | 2018-08-28 | 2021-01-21 | 美商高效電源轉換公司 | 使用具回授之主動前置驅動器的GaN驅動器 |
US11687110B2 (en) * | 2018-09-26 | 2023-06-27 | Efficient Power Conversion Corporation | Multi-channel pulse current generator with charging |
US10454481B1 (en) * | 2019-04-04 | 2019-10-22 | Navitas Semiconductor, Inc | GaN logic circuits |
US10601302B1 (en) | 2019-04-04 | 2020-03-24 | Navitas Semiconductor, Inc. | Bootstrap power supply circuit |
US11394380B2 (en) | 2019-08-09 | 2022-07-19 | Texas Instruments Incorporated | Gate drivers and auto-zero comparators |
US20230353110A1 (en) | 2020-03-27 | 2023-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, amplifier, and electronic device |
US11489441B2 (en) * | 2020-06-02 | 2022-11-01 | Texas Instruments Incorporated | Reference voltage generation circuits and related methods |
CN113433998B (zh) * | 2021-07-06 | 2022-06-24 | 西安电子科技大学芜湖研究院 | 一种功率驱动器 |
WO2023107885A1 (en) * | 2021-12-08 | 2023-06-15 | Efficient Power Conversion Corporation | Active bootstrapping drivers |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009278386A (ja) * | 2008-05-14 | 2009-11-26 | Sony Corp | 半導体デバイス、表示パネル及び電子機器 |
JP2011509629A (ja) * | 2008-01-11 | 2011-03-24 | インターナショナル レクティフィアー コーポレイション | 集積iii族窒化物電力変換回路 |
JP2012078839A (ja) * | 2011-11-07 | 2012-04-19 | Semiconductor Energy Lab Co Ltd | 表示装置の駆動回路 |
JP2015115953A (ja) * | 2013-12-09 | 2015-06-22 | インターナショナル・レクティファイアー・コーポレーションInternational Rectifier Corporation | モノリシック集積ハイサイドブロックおよび電圧変換器 |
US20160079979A1 (en) * | 2014-09-16 | 2016-03-17 | Navitas Semiconductor Inc. | Pulsed level shift and inverter circuits for gan devices |
JP2016039440A (ja) * | 2014-08-06 | 2016-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4724342A (en) | 1986-02-12 | 1988-02-09 | Hughes Aircraft Company | Push-pull DCFL driver circuit |
EP0764365A2 (en) * | 1995-04-10 | 1997-03-26 | Koninklijke Philips Electronics N.V. | Level-shifting circuit and high-side driver including such a level-shifting circuit |
US6037720A (en) * | 1998-10-23 | 2000-03-14 | Philips Electronics North America Corporation | Level shifter |
US6859087B2 (en) * | 2002-10-31 | 2005-02-22 | International Rectifier Corporation | Half-bridge high voltage gate driver providing protection of a transistor |
TW200525869A (en) * | 2004-01-28 | 2005-08-01 | Renesas Tech Corp | Switching power supply and semiconductor IC |
JP2008205767A (ja) * | 2007-02-20 | 2008-09-04 | Seiko Epson Corp | レベルシフト回路および電気光学装置 |
JP4525696B2 (ja) * | 2007-04-04 | 2010-08-18 | 三菱電機株式会社 | 電源電圧低下保護回路 |
US8054110B2 (en) * | 2009-01-20 | 2011-11-08 | University Of South Carolina | Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs) |
KR101057676B1 (ko) * | 2009-04-13 | 2011-08-18 | 실리콘 디스플레이 (주) | 레벨시프터 및 이를 갖는 어레이 기판 |
KR20110037367A (ko) * | 2009-10-06 | 2011-04-13 | 페어차일드코리아반도체 주식회사 | 스위치 구동 회로 및 구동 방법 |
US8581625B2 (en) * | 2011-05-19 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
JP2013198125A (ja) * | 2012-03-22 | 2013-09-30 | Fujitsu Semiconductor Ltd | 半導体装置 |
US9660639B2 (en) | 2012-12-21 | 2017-05-23 | Gan Systems Inc. | Distributed driver circuitry integrated with GaN power transistors |
EP2800274B1 (en) * | 2013-04-30 | 2017-09-13 | Nxp B.V. | Gate driver circuit |
US9007117B2 (en) | 2013-08-02 | 2015-04-14 | Infineon Technologies Dresden Gmbh | Solid-state switching device having a high-voltage switching transistor and a low-voltage driver transistor |
WO2015135072A1 (en) * | 2014-03-12 | 2015-09-17 | Gan Systems Inc. | Power switching systems comprising high power e-mode gan transistors and driver circuitry |
CN103915990B (zh) * | 2014-04-18 | 2016-05-18 | 电子科技大学 | 一种用于GaN功率器件的驱动电路 |
US9559683B2 (en) * | 2014-08-29 | 2017-01-31 | Infineon Technologies Austria Ag | System and method for a switch having a normally-on transistor and a normally-off transistor |
EP3001563B1 (en) * | 2014-09-25 | 2019-02-27 | Nexperia B.V. | A cascode transistor circuit |
US9667245B2 (en) | 2014-10-10 | 2017-05-30 | Efficient Power Conversion Corporation | High voltage zero QRR bootstrap supply |
CN104917467B (zh) * | 2015-06-24 | 2017-08-25 | 江苏博普电子科技有限责任公司 | 一种GaN微波功率放大器用漏极调制电路 |
-
2017
- 2017-05-25 TW TW106117466A patent/TWI641218B/zh active
- 2017-05-25 DE DE112017002655.5T patent/DE112017002655B4/de active Active
- 2017-05-25 CN CN201780031960.6A patent/CN109155627B/zh active Active
- 2017-05-25 KR KR1020187037100A patent/KR102109851B1/ko active IP Right Grant
- 2017-05-25 JP JP2018560037A patent/JP7080185B2/ja active Active
- 2017-05-25 US US15/605,219 patent/US10243546B2/en active Active
- 2017-05-25 WO PCT/US2017/034461 patent/WO2017205618A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011509629A (ja) * | 2008-01-11 | 2011-03-24 | インターナショナル レクティフィアー コーポレイション | 集積iii族窒化物電力変換回路 |
JP2009278386A (ja) * | 2008-05-14 | 2009-11-26 | Sony Corp | 半導体デバイス、表示パネル及び電子機器 |
JP2012078839A (ja) * | 2011-11-07 | 2012-04-19 | Semiconductor Energy Lab Co Ltd | 表示装置の駆動回路 |
JP2015115953A (ja) * | 2013-12-09 | 2015-06-22 | インターナショナル・レクティファイアー・コーポレーションInternational Rectifier Corporation | モノリシック集積ハイサイドブロックおよび電圧変換器 |
JP2016039440A (ja) * | 2014-08-06 | 2016-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20160079979A1 (en) * | 2014-09-16 | 2016-03-17 | Navitas Semiconductor Inc. | Pulsed level shift and inverter circuits for gan devices |
Also Published As
Publication number | Publication date |
---|---|
DE112017002655T5 (de) | 2019-03-07 |
CN109155627A (zh) | 2019-01-04 |
KR102109851B1 (ko) | 2020-05-13 |
US20170346475A1 (en) | 2017-11-30 |
KR20190009800A (ko) | 2019-01-29 |
TWI641218B (zh) | 2018-11-11 |
CN109155627B (zh) | 2023-04-11 |
TW201813305A (zh) | 2018-04-01 |
WO2017205618A1 (en) | 2017-11-30 |
DE112017002655B4 (de) | 2023-08-24 |
US10243546B2 (en) | 2019-03-26 |
JP7080185B2 (ja) | 2022-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7080185B2 (ja) | エンハンスメントモードfetドライバic | |
JP5011585B2 (ja) | 電力素子の駆動回路 | |
US8710878B2 (en) | Output circuit | |
US8466735B2 (en) | High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same | |
EP0329285B1 (en) | Output buffer | |
US20020153938A1 (en) | Hybrid power MOSFET | |
KR20170069244A (ko) | 고전압 영 qrr 부트스트랩 전원 | |
JP6603287B2 (ja) | 構成可能なクランプ回路 | |
US6696858B2 (en) | Level-shifting circuit | |
JP2004260730A (ja) | パルス発生回路及びそれを用いたハイサイドドライバ回路 | |
TWI715249B (zh) | 用於半橋氮化鎵驅動器應用之位準偏移器 | |
JP2024014878A (ja) | 半導体装置 | |
WO2022187175A1 (en) | Integrated bus interface fall and rise time accelerator method | |
CN111884490B (zh) | 电力电路以及集成电路 | |
WO2018070307A1 (ja) | 電力素子の駆動回路 | |
JP6572076B2 (ja) | ゲート駆動回路 | |
TW202324933A (zh) | 預驅動自舉式驅動器 | |
JP2014168131A (ja) | Cmosインバータ回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200522 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210323 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211012 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211221 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220426 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220524 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7080185 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |