JP2019512881A - グラフェン薄膜トランジスタの製造方法 - Google Patents
グラフェン薄膜トランジスタの製造方法 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 185
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 180
- 239000010409 thin film Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 107
- 239000002184 metal Substances 0.000 claims abstract description 107
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000011889 copper foil Substances 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 35
- 239000010949 copper Substances 0.000 claims abstract description 35
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 204
- 238000000034 method Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229920002635 polyurethane Polymers 0.000 claims description 5
- 239000004814 polyurethane Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 11
- 239000004926 polymethyl methacrylate Substances 0.000 description 11
- UGFMBZYKVQSQFX-UHFFFAOYSA-N para-methoxy-n-methylamphetamine Chemical compound CNC(C)CC1=CC=C(OC)C=C1 UGFMBZYKVQSQFX-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
Description
S1:メタンを炭素源として、化学気相堆積法により銅箔の表面にグラフェン層を堆積し、
S2:前記グラフェン層の表面に金属層を堆積し、
S3:前記金属層の表面に支持層を貼り合わせることにより、グラフェン膜シートを形成し、
S4:前記グラフェン膜シートを銅腐食液に入れ置き、前記銅箔が全部溶解されるまで支持層は一部が銅腐食液に浸る一方、金属層、グラフェン層及び銅箔は全部が銅腐食液に浸っており、そして銅箔が除去されたグラフェン膜シートを目標基板に移動し、支持層を取り除き、
S5:前記金属層の表面にソース・ドレインのパターンを定義してソース・ドレイン電極を作成し、目標基板におけるグラフェン層から離れる側にゲート電極を作成することにより、グラフェン薄膜トランジスタを取得することを含む。
S1:銅箔の表面にグラフェン層を堆積し、
S2:グラフェン層の表面に金属層を堆積し、
S3:金属層の表面に支持層を貼り合わせることにより、グラフェン膜シートが形成され、
S4:グラフェン膜シートを銅腐食液に入れ置き、銅箔が全部溶解されるまで支持層は一部が銅腐食液に浸る一方、金属層、グラフェン層及び銅箔は全部が銅腐食液に浸っており、そして銅箔が除去されたグラフェン膜シートを目標基板に移動し、支持層を取り除き、
S5:金属層の表面にソース・ドレインのパターンを定義してソース・ドレイン電極を作成し、目標基板におけるグラフェン層から離れる側にゲート電極を作成することにより、グラフェン薄膜トランジスタを取得することを含む。
S101:銅箔の表面にグラフェン層を堆積し、
S102:グラフェン層の表面に金属層を堆積し、
S103:金属層の表面に支持層を貼り合わせることにより、グラフェン膜シートを形成し、
S104:グラフェン膜シートを銅腐食液に入れ置き、銅箔が全部溶解されるまで支持層は一部が銅腐食液に浸る一方、金属層、グラフェン層及び銅箔は全部が銅腐食液に浸り、そして銅箔が除去されたグラフェン膜シートを目標基板に移動し、支持層を取り除き、
S105:金属層の表面にソース・ドレインのパターンを定義し、ソース・ドレイン電極を作成し、目標基板におけるグラフェン層から離れる側にゲート電極を作成することにより、グラフェン薄膜トランジスタを取得することを含む。
Claims (20)
- グラフェン薄膜トランジスタの製造方法であって、
S1:メタンを炭素源として、化学気相堆積法により銅箔の表面にグラフェン層を堆積し、
S2:前記グラフェン層の表面に金属層を堆積し、
S3:前記金属層の表面に支持層を貼り合わせることにより、グラフェン膜シートを形成し、
S4:前記グラフェン膜シートを銅腐食液に入れ置き、前記銅箔が全部溶解されるまで前記支持層は一部が銅腐食液に浸る一方、前記金属層、グラフェン層及び銅箔は全部が銅腐食液に浸っており、そして銅箔が除去されたグラフェン膜シートを目標基板に移動し、前記支持層を取り除き、
S5:前記金属層の表面にソース・ドレインのパターンを定義してソース・ドレイン電極を作成し、目標基板におけるグラフェン層から離れている側にゲート電極を作成することにより、グラフェン薄膜トランジスタを取得することを含むグラフェン薄膜トランジスタの製造方法。 - S1の前に、前記銅箔を順にエタノール、プロトン、0.5mol/Lの希塩酸で洗浄することを更に含む請求項1に記載のグラフェン薄膜トランジスタの製造方法。
- 前記金属層が電子ビーム蒸発又はマグネトロンスパッタ技術によりグラフェンの表面に堆積される請求項1に記載のグラフェン薄膜トランジスタの製造方法。
- 前記金属層の厚さは5nm〜50nmである請求項1に記載のグラフェン薄膜トランジスタの製造方法。
- 前記金属層は、単一層の金属層又は複合層の金属層を含む請求項4に記載のグラフェン薄膜トランジスタの製造方法。
- 前記金属層が複合層の金属層である場合、各種の金属層の厚さが同じである請求項5に記載のグラフェン薄膜トランジスタの製造方法。
- 前記金属層に採用される金属は、チタン、金、ニッケル、パラジウム又はプラチナを含む請求項5に記載のグラフェン薄膜トランジスタの製造方法。
- 前記支持層の密度が前記銅腐食液の密度よりも小さい請求項1に記載のグラフェン薄膜トランジスタの製造方法。
- 前記支持層がポリウレタン材料である請求項8に記載のグラフェン薄膜トランジスタの製造方法。
- 前記目標基板は絶縁層を含み、絶縁層の材料は、二酸化ケイ素、炭化ケイ素、ガラスまたはサファイアを含む請求項1に記載のグラフェン薄膜トランジスタの製造方法。
- グラフェン薄膜トランジスタの製造方法であって、
S1:銅箔の表面にグラフェン層を堆積し、
S2:前記グラフェン層の表面に金属層を堆積し、
S3:前記金属層の表面に支持層を貼り合わせることにより、グラフェン膜シートが形成され、
S4:前記グラフェン膜シートを銅腐食液に入れ置き、前記銅箔が全部溶解されるまで前記支持層は一部が銅腐食液に浸る一方、前記金属層、グラフェン層及び銅箔は全部が銅腐食液に浸っており、そして前記銅箔が除去されたグラフェン膜シートを目標基板に移動し、前記支持層を取り除き、
S5:前記金属層の表面にソース・ドレインのパターンを定義してソース・ドレイン電極を作成し、目標基板におけるグラフェン層から離れている側にゲート電極を作成することにより、グラフェン薄膜トランジスタを取得することを含むグラフェン薄膜トランジスタの製造方法。 - S1の前に、前記銅箔を順にエタノール、プロトン、0.5mol/Lの希塩酸で洗浄することを更に含む請求項11に記載のグラフェン薄膜トランジスタの製造方法。
- グラフェンは、化学気相堆積法により前記銅箔の表面に堆積される請求項11に記載のグラフェン薄膜トランジスタの製造方法。
- 前記金属層が電子ビーム蒸発又はマグネトロンスパッタ技術によりグラフェンの表面に堆積される請求項11に記載のグラフェン薄膜トランジスタの製造方法。
- 前記金属層の厚さは5nm〜50nmである請求項11に記載のグラフェン薄膜トランジスタの製造方法。
- 前記金属層は、単一層の金属層又は複合層の金属層を含む請求項15に記載のグラフェン薄膜トランジスタの製造方法。
- 前記金属層に採用される金属は、チタン、金、ニッケル、パラジウム又はプラチナを含む請求項16に記載のグラフェン薄膜トランジスタの製造方法。
- 前記支持層の密度が前記銅腐食液の密度よりも小さい請求項11に記載のグラフェン薄膜トランジスタの製造方法。
- 前記支持層がポリウレタン材料である請求項18に記載のグラフェン薄膜トランジスタの製造方法。
- 前記目標基板は絶縁層を含み、絶縁層の材料は、二酸化ケイ素、炭化ケイ素、ガラス又はサファイアを含む請求項11に記載のグラフェン薄膜トランジスタの製造方法。
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