JP2019129214A - 半導体モジュールの接合層、半導体モジュール及びその製造方法 - Google Patents
半導体モジュールの接合層、半導体モジュール及びその製造方法 Download PDFInfo
- Publication number
- JP2019129214A JP2019129214A JP2018009471A JP2018009471A JP2019129214A JP 2019129214 A JP2019129214 A JP 2019129214A JP 2018009471 A JP2018009471 A JP 2018009471A JP 2018009471 A JP2018009471 A JP 2018009471A JP 2019129214 A JP2019129214 A JP 2019129214A
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- Prior art keywords
- electronic component
- substrate
- semiconductor module
- bonding
- bonding layer
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- Granted
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- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
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- 238000010908 decantation Methods 0.000 description 1
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- OBBXFSIWZVFYJR-UHFFFAOYSA-L tin(2+);sulfate Chemical compound [Sn+2].[O-]S([O-])(=O)=O OBBXFSIWZVFYJR-UHFFFAOYSA-L 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
- B23K35/007—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of copper or another noble metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0483—Alloys based on the low melting point metals Zn, Pb, Sn, Cd, In or Ga
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
Description
<CuコアSnシェル粉末>
図1の拡大図に示すように、本実施形態のCuコアSnシェル粉末11は、コア(中心核)11aがCu又はCuとSnの金属間化合部からなり、シェル(外殻)11bがSnからなる。このため、250℃〜350℃の温度で加熱すると、シェルのSnが溶融する一方、コアのCuが溶融しない特徴を有する。
得られたCuコアSnシェル粉末を接合用フラックスと所定の割合で混合してペーストにする。このペーストの調製に用いられる接合用フラックスは、特に限定されないが、公知の汎用される溶剤、ロジン、チキソ剤及び活性剤等の各成分を混合して調製されたフラックスを用いることができる。なお、本実施形態のペーストは、特許文献2に示されるような、Cu粉末とSn粉末とをフラックスに混合して調製されるペーストは含まない。
次いで、図2に示すように、本実施形態の半導体チップ素子、LEDチップ素子等の電子部品14と基板15の間に得られたペースト12aを介在させる。例えば、電子部品を実装する部分が開口したメタルマスクを水平に置いた基板に重ね、メタルマスク上にペーストを配置し、スキージを用いてペーストをメタルマスクの開口部に流し込んだ後、メタルマスクを維持した状態で基板を降下させることにより、基板の上記開口部に相当する位置にペーストを残存させる。続いて電子部品をこのペーストに載せることにより、電子部品と基板の間に得られたペーストを介在させる。メタルマスクの厚さを20μm〜300μmにすることにより、後述する接合層の厚さを10μm〜200μmにすることができる。
次に、電子部品14をペースト12aに載せた状態、即ちペースト12aを電子部品14と基板15との間に介在させた状態で、図2に示すように、図示しない下プレスと上プレスとにより、不活性雰囲気又は還元性雰囲気下、熱圧成形する。熱圧成形条件は、電子部品及び/又は基板に1MPa〜30MPaの圧力が加えられ、同時に250℃〜350℃の温度が1分〜100分間加えられる。この加熱により、図2の拡大図に示すように、ペースト中のCuコアSnシェル粉末11のシェル11bのSnが溶融し、シェル構造が崩れて隣り合う粉末のSn同士が一体となって液状になる。加圧により、液状になったSnが電子部品14の下面中心部から端部14a及び14bに移動し、電子部品14の下面中心部では溶融しないCuが熱圧前の状態で留まった接合層前駆体12bになる。
所定時間の熱圧成形後、加圧状態で冷却すると、図3に示すように、CuSn金属間化合物からなる接合層13により電子部品14が基板15に接合した半導体モジュール30が得られる。即ち、冷却後、電子部品14と基板15との間の接合層前駆体12bがすべてCuSn金属間化合物となった接合層13になる。これにより、電子部品14は接合層13により基板15に接合され、接合層13は、その接合層13の中心部13aから電子部品14の端部14a、14bの接合部13b、13cにかけてSnの組成割合が増加したCuSn金属間化合物になる。
平均粒径5μmのCuコアSnシェル粉末(Cu:50質量%、Sn:50質量%)と弱い活性剤を添加した弱活性化フラックス(RMAフラックス)を、フラックスの割合が13質量%になるように混合してペーストを調製した。得られたペーストを0.5mm厚の20mm□のコバール(Fe−Ni−Co系合金)基板上に厚さ50μmで塗布した。次いでこのペーストの上に、裏面がAuがスパッタリングされた2.5mm□の半導体チップ素子を搭載した。次に加圧加熱炉内に半導体チップ素子を搭載したコバール基板を導入し、そこで窒素雰囲気中、半導体チップ素子とコバール基板に10MPaの圧力を加え、300℃の温度で5分間維持して熱圧成形した。これにより半導体チップ素子がコバール基板に接合された模擬的な半導体モジュールを得た。実施例1の熱圧成形前のペーストの条件と模擬的な半導体モジュールを熱圧成形する条件を表1に示す。
表1に示す熱圧成形前のペーストの条件と模擬的な半導体モジュールを熱圧成形する条件に設定して、実施例1と同様に、実施例2〜11及び比較例2〜7の模擬的な半導体モジュールを得た。実施例4では、加圧成形するときの雰囲気を5体積%の水素ガスを含む窒素ガスの雰囲気とした。
平均粒径10μmのSn粉末と、平均粒径10μmのCu粉末とを、Cu:50質量%、Sn:50質量%の割合で混合して混合粉末を作製した。この混合粉末にRMAフラックスを、フラックスの割合が13質量%になるように混合してペーストを調製した。以下、実施例1と同様にして、半導体チップ素子がコバール基板に接合された模擬的な半導体モジュールを得た。表1に比較例1の熱圧成形前のペーストの条件と模擬的な半導体モジュールを熱圧成形する条件を示す。
実施例1〜11及び比較例1〜7の18種類の模擬的な半導体モジュールについて、(1) 半導体モジュールの接合層の厚さと、(2) この接合層のCuとSnの組成比(質量比)を次に述べる方法で測定した。また(3) 冷熱衝撃試験を次に述べる方法で行った。これらの結果を表2に示す。
半導体モジュールの接合層の断面を光学顕微鏡(キーエンス社製、型番VHX−1000)を用いて、倍率150倍で5箇所観察し、接合層の厚さを平均値で求めた。
接合層中のCuとSnの組成比(質量比)を走査型電子顕微鏡−エネルギー分散型X線分析法(SEM−EDX)により求めた。
接合層で接合されたコバール基板及び半導体チップ素子で構成された模擬的な半導体モジュールを冷熱衝撃試験機(エスペック社製TSB-51)を用いて、液相(フロリナート)で、−40℃で5分間、200℃で5分間の冷熱サイクルを2000回実施した。この冷熱衝撃試験の後で18種類の模擬的な半導体モジュールのシェア強度を、JIS Z 3198−7に記されている鉛フリーハンダ試験方法−第7部の「チップ部品におけるハンダ接合のシェア強度測定方法」に準拠して、室温でそれぞれ測定した。その結果を表2に示す。シェア強度が40MPa以上であれば「優」とし、20MPa〜40MPaであれば「良」とし、10MPa〜20MPaであれば「可」とし、10MPa未満であれば「不可」とした。
一方、接合層の中心部から端部の接合部にかけて、実施例1〜11と比較してSnの組成割合があまり変化しない比較例1ではシェア強度は10MPa以下に低下していた。これは、Snの組成割合があまり変化しないために熱衝撃試験中に接合層にかかる応力から発生したクラックが進展して、接合層の剥離が生じているからと考えられる。また、Snの組成割合が比較例1と比較して増加する比較例2〜7においてもシェア強度は10MPa以下に低下していた。これらは、加圧不足による接合層と基板、素子との密着性不足(比較例2)、過剰な圧力による基板、素子の部分的破壊(比較例3)、低温によるSn液相の生成不足による密着性不足(比較例4)、高温から室温に冷却した時の各部材の熱膨張差による過剰な応力ひずみによる部分的破壊(比較例5)、加熱不足によりSn−Cu相互拡散による金属間化合物生成不足(比較例6)、過加熱によるSn−Cu相互拡散によるカーケンダールボイド(kirkendall void)の生成(比較例7)などのためと考えられる。
11 CuコアSnシェル粉末
12a ペースト
12b 接合層前駆体
13 接合層
14 電子部品
15 基板
次いで、図1に示すように、本実施形態の半導体チップ素子、LEDチップ素子等の電子部品14と基板15の間に得られたペースト12aを介在させる。例えば、電子部品を実装する部分が開口したメタルマスクを水平に置いた基板に重ね、メタルマスク上にペーストを配置し、スキージを用いてペーストをメタルマスクの開口部に流し込んだ後、メタルマスクを維持した状態で基板を降下させることにより、基板の上記開口部に相当する位置にペーストを残存させる。続いて電子部品をこのペーストに載せることにより、電子部品と基板の間に得られたペーストを介在させる。メタルマスクの厚さを20μm〜300μmにすることにより、後述する接合層の厚さを10μm〜200μmにすることができる。
Claims (6)
- 電子部品と基板の間に介在しCuSn金属間化合物により構成された半導体モジュールの接合層において、
前記接合層の中心部から前記電子部品の端部の接合部にかけてSnの組成割合が増加するように構成されたことを特徴とする半導体モジュールの接合層。 - 前記接合層の中心部におけるSnの組成割合が20質量%〜50質量%であってCuの組成割合がその残部であり、前記電子部品の端部の接合部におけるSnの組成割合が60質量%〜80質量%であってCuの組成割合がその残部である請求項1記載の半導体モジュールの接合層。
- 前記接合層の厚さが10μm〜200μmである請求項1又は2記載の半導体モジュールの接合層。
- 請求項1ないし3いずれか1項に記載の接合層が電子部品と基板の間に介在する半導体モジュール。
- CuコアSnシェル粉末を含むペーストを電子部品と基板の間に介在させ、この介在させた状態で、不活性雰囲気又は還元性雰囲気下、前記電子部品及び/又は前記基板に1MPa〜30MPaの圧力を加えかつ250℃〜350℃の温度で1分〜10分間加熱して、前記電子部品を前記基板に接合することにより、半導体モジュールを製造する方法。
- 前記CuコアSnシェル粉末がSnの組成割合が40質量%〜60質量%であり、Cuの組成割合がその残部である請求項5記載の半導体モジュールの製造方法。
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