JP2019106456A - Iii族窒化物半導体基板 - Google Patents
Iii族窒化物半導体基板 Download PDFInfo
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- JP2019106456A JP2019106456A JP2017237911A JP2017237911A JP2019106456A JP 2019106456 A JP2019106456 A JP 2019106456A JP 2017237911 A JP2017237911 A JP 2017237911A JP 2017237911 A JP2017237911 A JP 2017237911A JP 2019106456 A JP2019106456 A JP 2019106456A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 116
- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 97
- 239000001257 hydrogen Substances 0.000 claims abstract description 126
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 126
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 123
- 238000002513 implantation Methods 0.000 claims abstract description 52
- 238000002347 injection Methods 0.000 claims description 106
- 239000007924 injection Substances 0.000 claims description 106
- 239000011777 magnesium Substances 0.000 claims description 99
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 98
- 229910052749 magnesium Inorganic materials 0.000 claims description 98
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 230000007547 defect Effects 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
- H01L21/26553—Through-implantation
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/2656—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
上記の実施例では、II族元素の一例としてマグネシウム(Mg)を用いていたが、この構成に限定されるものではなく、II族元素は、例えばベリウム(Be)、カルシウム(Ca)等であってもよい。
10 :本体
11 :表面
12 :裏面
20 :マグネシウム注入領域
21 :下端部
24 :外周部
30 :水素注入領域
31 :上端部
32 :下端部
34 :外周部
51 :p型伝導領域
52 :n型伝導領域
70 :境界部
100 :半導体装置
102 :第1層
104 :第2層
106 :第3層
110 :半導体基板
112 :裏面
114 :表面
116 :表面
122 :裏面電極
124 :表面電極
140 :絶縁膜
Claims (6)
- III族窒化物半導体基板であって、
前記III族窒化物半導体基板の表面から深さ方向にII族元素が注入されてp型伝導性を有しているp型伝導領域を備えており、
前記III族窒化物半導体基板の深さ方向において前記p型伝導領域から前記p型伝導領域に隣接しているn型伝導領域にわたって水素が注入されている、III族窒化物半導体基板。 - 前記III族窒化物半導体基板の表面から深さ方向にII族元素が注入されているII族元素注入領域を備えており、
前記II族元素注入領域におけるII族元素の存在濃度が、前記II族元素注入領域に隣接している領域におけるII族元素の存在濃度より濃く、
前記III族窒化物半導体基板の深さ方向において前記II族元素注入領域から前記II族元素注入領域に隣接している領域にわたって水素が注入されている水素注入領域を更に備えており、
前記水素注入領域における水素の存在濃度が、前記水素注入領域に隣接している領域における水素の存在濃度より濃い、請求項1に記載のIII族窒化物半導体基板。 - 前記III族窒化物半導体基板の前記表面が窒素極性面である、請求項1または2に記載のIII族窒化物半導体基板。
- 前記III族窒化物半導体基板の前記表面に直交する方向から前記表面を視たときに、前記表面の一部の領域に前記II族元素注入領域が存在しており、前記表面に沿う方向において前記II族元素注入領域から前記II族元素注入領域に隣接している領域にわたって前記水素注入領域が存在している、請求項1から3のいずれか一項に記載のIII族窒化物半導体基板。
- 前記III族窒化物半導体基板の前記表面に直交する方向から前記表面を視たときの前記II族元素注入領域の外周部から前記水素注入領域の外周部までの距離が、前記III族窒化物半導体基板の深さ方向における前記III族窒化物半導体基板の前記表面から前記II族元素注入領域の下端部までの距離より長い、請求項4に記載のIII族窒化物半導体基板。
- 前記II族元素注入領域に注入されているII族元素がマグネシウムである、請求項1から5のいずれか一項に記載のIII族窒化物半導体基板。
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JP2017237911A JP6844520B2 (ja) | 2017-12-12 | 2017-12-12 | Iii族窒化物半導体基板 |
US16/207,788 US10868124B2 (en) | 2017-12-12 | 2018-12-03 | Group III nitride semiconductor substrate |
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JP2021028932A (ja) * | 2019-08-09 | 2021-02-25 | 富士電機株式会社 | 窒化物半導体装置の製造方法及び窒化物半導体装置 |
Citations (2)
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JP2004356257A (ja) * | 2003-05-28 | 2004-12-16 | Toyota Central Res & Dev Lab Inc | p型III族窒化物半導体の製造方法 |
JP2017212407A (ja) * | 2016-05-27 | 2017-11-30 | 株式会社豊田中央研究所 | 半導体基板と、その調整方法と、半導体装置 |
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EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
JP4901115B2 (ja) | 2004-03-04 | 2012-03-21 | 昭和電工株式会社 | 窒化ガリウム系半導体素子 |
JP6363403B2 (ja) | 2014-06-10 | 2018-07-25 | 住友化学株式会社 | 半導体積層構造およびその製造方法 |
WO2016017215A1 (ja) * | 2014-07-30 | 2016-02-04 | 三菱電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP6394545B2 (ja) | 2015-09-10 | 2018-09-26 | 豊田合成株式会社 | 半導体装置およびその製造方法ならびに電力変換装置 |
TWI569467B (zh) * | 2015-11-10 | 2017-02-01 | 錼創科技股份有限公司 | 半導體發光元件 |
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JP2004356257A (ja) * | 2003-05-28 | 2004-12-16 | Toyota Central Res & Dev Lab Inc | p型III族窒化物半導体の製造方法 |
JP2017212407A (ja) * | 2016-05-27 | 2017-11-30 | 株式会社豊田中央研究所 | 半導体基板と、その調整方法と、半導体装置 |
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JP2021028932A (ja) * | 2019-08-09 | 2021-02-25 | 富士電機株式会社 | 窒化物半導体装置の製造方法及び窒化物半導体装置 |
JP7404703B2 (ja) | 2019-08-09 | 2023-12-26 | 富士電機株式会社 | 窒化物半導体装置の製造方法及び窒化物半導体装置 |
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JP6844520B2 (ja) | 2021-03-17 |
US20190181230A1 (en) | 2019-06-13 |
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