JP2018195641A - シリコンウエーハの研磨方法 - Google Patents
シリコンウエーハの研磨方法 Download PDFInfo
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- JP2018195641A JP2018195641A JP2017096563A JP2017096563A JP2018195641A JP 2018195641 A JP2018195641 A JP 2018195641A JP 2017096563 A JP2017096563 A JP 2017096563A JP 2017096563 A JP2017096563 A JP 2017096563A JP 2018195641 A JP2018195641 A JP 2018195641A
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- JP
- Japan
- Prior art keywords
- polishing
- silicon wafer
- pad
- slurry
- colloidal silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 133
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 38
- 239000010703 silicon Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000002002 slurry Substances 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000008119 colloidal silica Substances 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims abstract description 15
- 239000003513 alkali Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 32
- 230000007547 defect Effects 0.000 description 19
- 239000000126 substance Substances 0.000 description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910020175 SiOH Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 hydroxide ions Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
ショアA硬度60の硬質パッドを用いた片面研磨装置を使用し、機械的作用に対する化学的作用の検証評価を行った。まず、粒径35nmの高純度コロイダルシリカの研磨スラリー中の質量分率(砥粒濃度)を0.01(即ち1%)で一定として、研磨スラリーのアルカリ濃度(水酸化物イオン濃度)を変え、シリコンウェーハの研磨を行った。pHの調整は水酸化カリウムおよび水酸化テトラメチルアンモニウム(TMAH)により行った。研磨圧力は20kPaとし、定盤回転数、ヘッド回転数は30rpmとし、研磨は3分間行った。
次に、研磨スラリーのアルカリ濃度を一定(PH10.5)とし、コロイダルシリカの質量分率(砥粒濃度)を変えて研磨評価を行った。その他の条件は実施例1〜4、比較例1と同様とした。表2に各条件を示し、図2に[OH−]/コロイダルシリカの質量分率の値と、LLS欠陥個数との関係を示すグラフを示す。こちらも、[OH−]/砥粒濃度が0.1mol/l以上であればLLS欠陥が減少していることが判った。
Claims (3)
- シリコンウェーハと研磨パッドとの間に研磨スラリーを介在させて、前記シリコンウエーハを研磨するシリコンウエーハの研磨方法であって、
前記研磨スラリーとして、コロイダルシリカとアルカリを含み、(前記研磨スラリー中の水酸化物イオン濃度[OH−](mol/l))/(前記研磨スラリーの質量中の前記コロイダルシリカの質量分率)≧0.1(mol/l)を満たすものを用いて研磨することを特徴とするシリコンウェーハの研磨方法。 - 前記研磨パッドとして、ショアA硬度60以上の研磨パッドを用いることを特徴とする請求項1に記載のシリコンウェーハの研磨方法。
- 前記研磨パッドとして、ショアA硬度70以上の研磨パッドを用いることを特徴とする請求項1又は請求項2に記載のシリコンウェーハの研磨方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017096563A JP6747376B2 (ja) | 2017-05-15 | 2017-05-15 | シリコンウエーハの研磨方法 |
PCT/JP2018/016132 WO2018211903A1 (ja) | 2017-05-15 | 2018-04-19 | シリコンウエーハの研磨方法 |
TW107113771A TWI727165B (zh) | 2017-05-15 | 2018-04-24 | 矽晶圓的研磨方法 |
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JP2017096563A JP6747376B2 (ja) | 2017-05-15 | 2017-05-15 | シリコンウエーハの研磨方法 |
Publications (2)
Publication Number | Publication Date |
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JP2018195641A true JP2018195641A (ja) | 2018-12-06 |
JP6747376B2 JP6747376B2 (ja) | 2020-08-26 |
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JP2017096563A Active JP6747376B2 (ja) | 2017-05-15 | 2017-05-15 | シリコンウエーハの研磨方法 |
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---|---|
JP (1) | JP6747376B2 (ja) |
TW (1) | TWI727165B (ja) |
WO (1) | WO2018211903A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023119951A1 (ja) * | 2021-12-21 | 2023-06-29 | 信越半導体株式会社 | 両面研磨装置、半導体シリコンウェーハの両面研磨方法、両面研磨シリコンウェーハ及びその製造方法 |
JP7435634B2 (ja) | 2021-12-21 | 2024-02-21 | 信越半導体株式会社 | 両面研磨装置、半導体シリコンウェーハの両面研磨方法及び両面研磨シリコンウェーハの製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010076075A (ja) * | 2008-09-29 | 2010-04-08 | Fujibo Holdings Inc | 研磨加工用の研磨パッドに用いられる研磨シートおよび研磨パッド |
JP2010082707A (ja) * | 2008-09-29 | 2010-04-15 | Fujibo Holdings Inc | 研磨パッド |
WO2010122985A1 (ja) * | 2009-04-20 | 2010-10-28 | 日立化成工業株式会社 | 半導体基板用研磨液及び半導体基板の研磨方法 |
JP2013258227A (ja) * | 2012-06-12 | 2013-12-26 | Sumco Techxiv株式会社 | 半導体ウェーハの製造方法 |
JP2015193060A (ja) * | 2014-03-31 | 2015-11-05 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013204839A1 (de) * | 2013-03-19 | 2014-09-25 | Siltronic Ag | Verfahren zum Polieren einer Scheibe aus Halbleitermaterial |
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2017
- 2017-05-15 JP JP2017096563A patent/JP6747376B2/ja active Active
-
2018
- 2018-04-19 WO PCT/JP2018/016132 patent/WO2018211903A1/ja active Application Filing
- 2018-04-24 TW TW107113771A patent/TWI727165B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010076075A (ja) * | 2008-09-29 | 2010-04-08 | Fujibo Holdings Inc | 研磨加工用の研磨パッドに用いられる研磨シートおよび研磨パッド |
JP2010082707A (ja) * | 2008-09-29 | 2010-04-15 | Fujibo Holdings Inc | 研磨パッド |
WO2010122985A1 (ja) * | 2009-04-20 | 2010-10-28 | 日立化成工業株式会社 | 半導体基板用研磨液及び半導体基板の研磨方法 |
JP2013258227A (ja) * | 2012-06-12 | 2013-12-26 | Sumco Techxiv株式会社 | 半導体ウェーハの製造方法 |
JP2015193060A (ja) * | 2014-03-31 | 2015-11-05 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023119951A1 (ja) * | 2021-12-21 | 2023-06-29 | 信越半導体株式会社 | 両面研磨装置、半導体シリコンウェーハの両面研磨方法、両面研磨シリコンウェーハ及びその製造方法 |
JP7435634B2 (ja) | 2021-12-21 | 2024-02-21 | 信越半導体株式会社 | 両面研磨装置、半導体シリコンウェーハの両面研磨方法及び両面研磨シリコンウェーハの製造方法 |
Also Published As
Publication number | Publication date |
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TW201900333A (zh) | 2019-01-01 |
JP6747376B2 (ja) | 2020-08-26 |
TWI727165B (zh) | 2021-05-11 |
WO2018211903A1 (ja) | 2018-11-22 |
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