JP2018160678A - ラミネートフィルム、ラミネート構造及びその製造方法 - Google Patents
ラミネートフィルム、ラミネート構造及びその製造方法 Download PDFInfo
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- JP2018160678A JP2018160678A JP2018102950A JP2018102950A JP2018160678A JP 2018160678 A JP2018160678 A JP 2018160678A JP 2018102950 A JP2018102950 A JP 2018102950A JP 2018102950 A JP2018102950 A JP 2018102950A JP 2018160678 A JP2018160678 A JP 2018160678A
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- 239000005001 laminate film Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000003287 optical effect Effects 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 62
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 22
- 238000003475 lamination Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 239000013039 cover film Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 21
- 239000012790 adhesive layer Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24851—Intermediate layer is discontinuous or differential
- Y10T428/2486—Intermediate layer is discontinuous or differential with outer strippable or release layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
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- Spectroscopy & Molecular Physics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Led Devices (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims (17)
- フレキシブル支持フィルムを用意する工程と、
少なくとも複数の個別の光学素子を形成するよう、パターンに従って前記支持フィルムの表面に1つ以上の層を付加する工程であり、前記パターンは、前記支持フィルムの前記表面に垂直な少なくとも1つの層の高さに変化を生じさせ、前記パターンは、別個の基板上の複数の発光デバイスの配置に対応する、工程と、
前記複数の個別の光学素子を備えた前記フレキシブル支持フィルムを、前記別個の基板上の前記発光デバイスの上に配置する工程と、
前記個別の光学素子間にある前記フレキシブル支持フィルムを前記別個の基板の方に引き寄せるように真空を適用し、それにより、前記個別の光学素子を前記発光デバイス上に推し進める力を印加する工程と、
この積層構造を加熱して前記個別の光学素子を前記複数の発光デバイスに貼り付ける工程と、
前記複数の発光デバイスに貼り付けられた前記複数の光学素子を残して前記支持フィルムを除去する工程と、
を有する発光デバイスの製造方法。 - 前記光学素子は波長変換素子を含む、請求項1に記載の発光デバイスの製造方法。
- 前記1つ以上の層は導電性要素の層を含む、請求項1に記載の発光デバイスの製造方法。
- 前記1つ以上の層は、熱伝導を高める材料を含む、請求項1に記載の発光デバイスの製造方法。
- 前記1つ以上の層は反射性材料の層を含む、請求項1に記載の発光デバイスの製造方法。
- 各光学素子は複数の蛍光体素子を含む、請求項1に記載の発光デバイスの製造方法。
- フレキシブルな支持フィルムと、
前記支持フィルム上の1つ以上のラミネート層であり、該ラミネート層のうちの少なくとも1つの層が、別個の基板上の複数の発光デバイスの位置に対応するパターンに従って前記支持フィルム上に配置された複数の個別の光学素子を含み、前記パターンは、前記支持フィルムの表面に垂直な前記少なくとも1つの層の高さに変化を生じさせ、前記個別の光学素子は、前記支持フィルムよりも実質的に高い真空ラミネーション接着係数を有し、前記複数の個別の光学素子は、接着剤層の使用なしで前記複数の光学素子が前記複数の発光デバイスに真空ラミネートされた後に前記光学素子へのダメージなく前記支持フィルムが前記複数の光学素子から除去されることを可能にする低い粘着力で、前記支持フィルムの前記表面に接着されている、1つ以上のラミネート層と
を有する、
ラミネートフィルム。 - 前記支持フィルムの反対側で前記複数の光学素子を覆うカバーフィルム層、を含む請求項7に記載のラミネートフィルム。
- 前記光学素子は波長変換素子を含む、請求項7に記載のラミネートフィルム。
- 前記光学素子は蛍光体−ガラス素子を含む、請求項7に記載のラミネートフィルム。
- 前記光学素子の各々は複数の蛍光体素子を含む、請求項7に記載のラミネートフィルム。
- 前記ラミネート層のうちの少なくとも1つは伝導要素の層を含み、該伝導要素は電気伝導要素又は熱伝導要素のうちの少なくとも一方を含む、請求項7に記載のラミネートフィルム。
- 前記ラミネート層のうちの少なくとも1つは反射性材料の層を含む、請求項7に記載のラミネートフィルム。
- 複数の発光デバイスを含むタイル;及び
ラミネートフィルムであり、
フレキシブル支持フィルムと、
前記タイル上の前記複数の発光デバイスの位置に対応する位置で前記フレキシブル支持フィルムの表面に配置された複数の個別の光学素子であり、当該光学素子は、前記フレキシブル支持フィルムの前記表面に垂直な高さに変化を含む平坦でないプロファイルを形成しており、当該個別の光学素子は、前記フレキシブル支持フィルムよりも実質的に高い真空ラミネーション接着係数を有し、当該複数の個別の光学素子は、接着剤層の使用なしで当該複数の光学素子が前記複数の発光デバイスに真空ラミネートされた後に当該光学素子へのダメージなく前記支持フィルムが当該複数の光学素子から除去されることを可能にする低い粘着力で、前記支持フィルムの前記表面に接着されている、複数の個別の光学素子と、
を含むラミネートフィルム;
を有するラミネート構造。 - 前記光学素子は波長変換素子を含む、請求項14に記載のラミネート構造。
- 前記光学素子の各々は複数の蛍光体素子を含む、請求項14に記載のラミネート構造。
- 前記ラミネートフィルムは、電気伝導層、熱伝導層、反射層及びカバー層のうちの少なくとも1つを含む、請求項14に記載のラミネート構造。
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DE102012109806A1 (de) * | 2012-10-15 | 2014-04-17 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
JP6713720B2 (ja) * | 2013-08-30 | 2020-06-24 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ及びそれを含む車両用照明装置 |
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US20130221835A1 (en) | 2013-08-29 |
TWI560400B (en) | 2016-12-01 |
JP6595044B2 (ja) | 2019-10-23 |
TW201231873A (en) | 2012-08-01 |
KR20130140039A (ko) | 2013-12-23 |
US9351348B2 (en) | 2016-05-24 |
JP6883632B2 (ja) | 2021-06-09 |
EP2633554A1 (en) | 2013-09-04 |
WO2012056378A1 (en) | 2012-05-03 |
CN103180945A (zh) | 2013-06-26 |
CN103180945B (zh) | 2016-12-07 |
JP2019220720A (ja) | 2019-12-26 |
KR101909299B1 (ko) | 2018-10-17 |
JP2013541220A (ja) | 2013-11-07 |
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