JP2018150587A - Plating forming method - Google Patents

Plating forming method Download PDF

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JP2018150587A
JP2018150587A JP2017047763A JP2017047763A JP2018150587A JP 2018150587 A JP2018150587 A JP 2018150587A JP 2017047763 A JP2017047763 A JP 2017047763A JP 2017047763 A JP2017047763 A JP 2017047763A JP 2018150587 A JP2018150587 A JP 2018150587A
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plating
cathode
anode
paste
particles
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坂本 一三
Kazumi Sakamoto
一三 坂本
雅史 鈴木
Masashi Suzuki
雅史 鈴木
裕平 藤岡
Yuhei Fujioka
裕平 藤岡
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Omron Corp
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Omron Corp
Omron Tateisi Electronics Co
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Priority to JP2017047763A priority Critical patent/JP2018150587A/en
Priority to PCT/JP2017/044723 priority patent/WO2018168129A1/en
Priority to CN201780085930.3A priority patent/CN110268103A/en
Priority to US16/490,139 priority patent/US20200010971A1/en
Priority to DE112017007235.2T priority patent/DE112017007235T5/en
Publication of JP2018150587A publication Critical patent/JP2018150587A/en
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • C25D15/02Combined electrolytic and electrophoretic processes with charged materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • C25D17/12Shape or form
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions

Abstract

PROBLEM TO BE SOLVED: To form a plating film of a high concentration with a simple and cheap device that uses a small amount of a plating liquid.SOLUTION: A plating film is formed on one side of a cathode 2 by steps of coating one side of the cathode 2 with paste 4 prepared by mixing a plating liquid 6 with particles 7, placing a liquid holding member 3 impregnated with the plating liquid 6 on one side of an anode 1, arranging the cathode 2 and the anode 1 to face each other, allowing the liquid holding member 3 and the paste 4 to contact with each other, and applying a voltage between the cathod 2 and the anode 1.SELECTED DRAWING: Figure 1

Description

本発明は、めっきの形成方法に関するものである。   The present invention relates to a method for forming a plating.

従来、めっきの形成方法として、無電解めっき皮膜または無電解複合めっき皮膜上に、膜厚が5μm以下のフッ素樹脂膜を有するめっき皮膜を形成する際、フッ素樹脂膜を、フッ素樹脂粒子をカチオン系界面活性剤で水中に分散した溶液を用いて形成するようにしたものが公知である(例えば、特許文献1参照)。   Conventionally, when forming a plating film having a fluororesin film with a thickness of 5 μm or less on an electroless plating film or an electroless composite plating film as a plating forming method, the fluororesin film is used as a cationic resin. What was formed using the solution disperse | distributed in water with surfactant is well-known (for example, refer patent document 1).

また、他のめっきの形成方法として、めっき槽内の鉛直方向の下位置に陰極を、配置し、めっき液中に分散させた分散粒子を陰極に向け徐々に沈降させ、陰極上に堆積させるようにしたものが公知である(例えば、特許文献2参照)。   As another plating formation method, a cathode is arranged at a lower position in the vertical direction in the plating tank, and the dispersed particles dispersed in the plating solution are gradually settled toward the cathode and deposited on the cathode. This is known (for example, see Patent Document 2).

しかしながら、前記従来のめっきの形成方法では、めっき槽内に収容しためっき液中に、めっきを形成するために基材や電極を浸漬させるようにしている。このため、設備が大掛かりでコストがかかるという問題がある。また、大量のめっき液をメンテナンスしたり、廃液処理したりする必要があり、この点でもコストアップを招来してしまう。   However, in the conventional plating forming method, the base material and the electrode are immersed in the plating solution accommodated in the plating tank in order to form the plating. For this reason, there is a problem that the equipment is large and expensive. In addition, it is necessary to maintain a large amount of plating solution or to perform waste solution treatment, which also leads to an increase in cost.

後者の方法では、陰極付近で消耗するめっき金属を補給するためにめっき液を攪拌することがあるが、めっき液中の粒子が移動し、高濃度のめっき皮膜を形成することは困難である。また、陰極を水平に設置しなければならないなど、構成上の制約が大きい。   In the latter method, the plating solution may be stirred to replenish the plating metal consumed near the cathode, but particles in the plating solution move and it is difficult to form a high concentration plating film. In addition, there are significant structural restrictions such as the need to install the cathode horizontally.

特開2007−39711号公報JP 2007-39711 A 特開2016-141862号公報JP 2016-141862 A

本発明は、少量のめっき液を使用した簡単かつ安価な設備によって高濃度のめっき皮膜を形成できるめっきの形成方法を提供することを課題とする。   An object of the present invention is to provide a plating forming method capable of forming a high-concentration plating film with simple and inexpensive equipment using a small amount of plating solution.

本発明は、前記課題を解決するための手段として、
陰極の片面に、めっき液に粒子を混合してなるペーストを塗布し、
陽極の片面に、前記めっき液を含浸した保液部材を配置し、
前記陰極と前記陽極とを対向させて、前記保液部材と前記ペーストとを互いに接触させ、
前記陰極と前記陽極との間に電圧を印加することにより、前記陰極の片面にめっきを形成する、めっきの形成方法を提供する。
As a means for solving the above problems, the present invention provides:
On one side of the cathode, apply a paste made by mixing particles in the plating solution,
A liquid retaining member impregnated with the plating solution is disposed on one side of the anode,
With the cathode and the anode facing each other, the liquid retaining member and the paste are brought into contact with each other,
There is provided a plating forming method of forming a plating on one side of the cathode by applying a voltage between the cathode and the anode.

本発明によれば、陽極の片面に保液部材を配置し、陰極の片面にペーストを塗布するようにしているので、大掛かりな設備や大量のめっき液を必要とすることなく安価に高濃度のめっき皮膜を形成できる。   According to the present invention, since the liquid retaining member is arranged on one side of the anode and the paste is applied to one side of the cathode, the high concentration can be obtained at low cost without requiring large-scale equipment and a large amount of plating solution. A plating film can be formed.

本実施形態に係るめっき形成装置の概略説明図である。It is a schematic explanatory drawing of the plating formation apparatus which concerns on this embodiment.

以下、本発明に係る実施形態を添付図面に従って説明する。なお、以下の説明は、本質的に例示に過ぎず、本発明、その適用物、あるいは、その用途を制限することを意図するものではない。また、図面は模式的なものであり、各寸法の比率等は現実のものとは相違している。   Embodiments according to the present invention will be described below with reference to the accompanying drawings. In addition, the following description is only illustrations essentially and does not intend restrict | limiting this invention, its application thing, or its use. Further, the drawings are schematic, and the ratio of each dimension is different from the actual one.

図1は、本実施形態に係るめっき形成装置を示す。このめっき形成装置は、陽極1と陰極2とを対向させ、陽極1の対向面にめっき液6を含浸させた保液部材3を配置し、陰極2にペースト4を塗布し、保液部材3とペースト4とを接触させたものである。   FIG. 1 shows a plating apparatus according to this embodiment. In this plating forming apparatus, the anode 1 and the cathode 2 are opposed to each other, the liquid retaining member 3 impregnated with the plating solution 6 is disposed on the opposite surface of the anode 1, the paste 4 is applied to the cathode 2, and the liquid retaining member 3 is disposed. And paste 4 are brought into contact with each other.

陽極1には、白金不溶解アノードからなる平板が使用されている。ここでは、陽極1には不溶性陽極1を使用しているが、Ag,Au,Pd,Rh,Ni,Cr等の溶解性の材料を使用することもできる。   As the anode 1, a flat plate made of a platinum insoluble anode is used. Here, the insoluble anode 1 is used as the anode 1, but soluble materials such as Ag, Au, Pd, Rh, Ni, and Cr can also be used.

陰極2には、タフピッチ銅(C1100)カソードからなる平板が使用されている。陰極2は陽極1に比べて片面(対向面)の表面積が大きくなっている。   A flat plate made of a tough pitch copper (C1100) cathode is used for the cathode 2. The cathode 2 has a larger surface area on one side (opposing surface) than the anode 1.

陽極1と陰極2との間には直流電源5が接続されている。   A DC power source 5 is connected between the anode 1 and the cathode 2.

保液部材3には、ウレタンスポンジが使用されている。ウレタンスポンジは平板状で、陰極2とほぼ同じ面積を有して陰極2と対向している。この場合、保液部材3の厚みは、10mm以下としている。これにより、陽極からの電流を効率良く伝えることができる。保液部材3には、パラジウム・ニッケルめっき液を含浸させている。但し、含浸できるめっき液6はこれに限らず、用途に応じて、例えば、Agめっき液やAuめっき液等、他の種々のめっき液6を使用できる。   For the liquid retaining member 3, a urethane sponge is used. The urethane sponge has a flat plate shape, has substantially the same area as the cathode 2 and faces the cathode 2. In this case, the thickness of the liquid retaining member 3 is 10 mm or less. Thereby, the current from the anode can be transmitted efficiently. The liquid retaining member 3 is impregnated with a palladium / nickel plating solution. However, the plating solution 6 that can be impregnated is not limited thereto, and various other plating solutions 6 such as an Ag plating solution and an Au plating solution can be used depending on the application.

ペースト4には、めっき液6に粒子7を混合したものが使用されている。すなわち、ペースト4は、めっき液6と粒子7を主成分とし、対象物である陰極2の表面に塗布が可能で、塗布後にブラシによる圧力を受けても塗布形状を維持し、導電性を有するものである。めっき液6には、保液部材3に含浸させたものと同様なものを使用でき、ここではパラジウム・ニッケルめっき液が使用されている。粒子7には、シリカをコーティングした酸化亜鉛が使用されている。粒子7の粒径は、一次粒子径が0.6μm以下とされている。粒子7の粒径を0.6μm以下としたのは、めっき皮膜中の粒子の充填密度を十分に高くするためである。   As the paste 4, a mixture of the plating solution 6 and the particles 7 is used. That is, the paste 4 is mainly composed of the plating solution 6 and the particles 7 and can be applied to the surface of the cathode 2 as an object. Is. As the plating solution 6, the same one as impregnated in the liquid retaining member 3 can be used. Here, a palladium / nickel plating solution is used. For the particles 7, zinc oxide coated with silica is used. The particle diameter of the particles 7 is such that the primary particle diameter is 0.6 μm or less. The reason why the particle size of the particles 7 is set to 0.6 μm or less is to sufficiently increase the packing density of the particles in the plating film.

但し、前記粒子7としては、酸化亜鉛に限らず、金属材料や、フッ素樹脂、ナイロン、ポリエチレン等の合成樹脂材料、黒鉛、フッ化黒鉛、二酸化モリブデン、窒化ホウ素等の化合物等を使用することができる。この場合、例えば、フッ素樹脂を使用すれば、従来の金属めっき被膜の性能に加えて、湿潤性を持たせることができる。   However, the particles 7 are not limited to zinc oxide, and metal materials, synthetic resin materials such as fluororesin, nylon, and polyethylene, and compounds such as graphite, fluorinated graphite, molybdenum dioxide, and boron nitride may be used. it can. In this case, for example, if a fluororesin is used, wettability can be imparted in addition to the performance of the conventional metal plating film.

また、ペースト4、めっき液6及び粒子7には、分散助剤として界面活性剤を修飾している。使用できる界面活性剤としては、例えば、カチオン性界面活性剤、めっき液6のpHに対応してカチオン性を示す両性界面活性剤、非イオン性界面活性剤等が含まれる。界面活性剤を使用することで、めっき面の濡れ性を向上し、無めっき、ピットなどのめっきの欠陥を防止し、めっき液6からのミストの発生を抑制できる。   Further, the paste 4, the plating solution 6 and the particles 7 are modified with a surfactant as a dispersion aid. Examples of the surfactant that can be used include a cationic surfactant, an amphoteric surfactant exhibiting a cationic property corresponding to the pH of the plating solution 6, and a nonionic surfactant. By using the surfactant, the wettability of the plating surface can be improved, plating defects such as no plating and pits can be prevented, and generation of mist from the plating solution 6 can be suppressed.

前記構成のめっき形成装置では、陽極1の片面(対向面)にめっき液6を含浸させた保液部材3を配置し、陰極2の片面(対向面)にペースト4を塗布する。ペースト4の塗布は、ディスペンサーやスキージ等により行い、厚さは0.1mmから0.5mmとしている。このようにペースト4の厚みを設定することで、陽極からの電流を効率良く陰極2に伝えることができる。   In the plating forming apparatus having the above-described configuration, the liquid retaining member 3 impregnated with the plating solution 6 is disposed on one surface (opposing surface) of the anode 1, and the paste 4 is applied to one surface (opposing surface) of the cathode 2. The paste 4 is applied by a dispenser, a squeegee or the like, and the thickness is 0.1 mm to 0.5 mm. By setting the thickness of the paste 4 in this way, the current from the anode can be efficiently transmitted to the cathode 2.

そして、陽極1と陰極2とを対向して配置し、保液部材3とペースト4とを面接触させる。この場合、陽極1と陰極2とは垂直方向に対向させてもよいし、水平方向等、他の向きに対向させてもよい。   Then, the anode 1 and the cathode 2 are arranged to face each other, and the liquid retaining member 3 and the paste 4 are brought into surface contact. In this case, the anode 1 and the cathode 2 may be opposed in the vertical direction, or may be opposed in other directions such as the horizontal direction.

この状態で、陽極1と陰極2を接近させ、保液部材3とペースト4とを加圧する。また、陽極1を振動させて保液部材3を介してペースト4を加振する。これにより、ペースト4中の粒子7を凝集させることができる。そして、陽極1と陰極2の間に電圧を印加すると、陰極2の表面にめっき皮膜が形成される。すなわち、陰極1の表面で、ペースト4に含まれるめっき液6中の金属イオンが還元され、電流の回り込みにより、ペースト4中の粒子7を取り込みながらめっき皮膜が形成される。この場合、形成されるめっき皮膜は、めっき液6中の金属の性質に加えて、取り込まれた粒子7による性質を持ち、複合めっき皮膜としての特徴を有する。   In this state, the anode 1 and the cathode 2 are brought close to each other, and the liquid retaining member 3 and the paste 4 are pressurized. Further, the anode 1 is vibrated to vibrate the paste 4 through the liquid retaining member 3. Thereby, the particle | grains 7 in the paste 4 can be aggregated. When a voltage is applied between the anode 1 and the cathode 2, a plating film is formed on the surface of the cathode 2. That is, the metal ions in the plating solution 6 contained in the paste 4 are reduced on the surface of the cathode 1, and a plating film is formed while entraining the particles 7 in the paste 4 by current wraparound. In this case, the formed plating film has the properties of the incorporated particles 7 in addition to the properties of the metal in the plating solution 6, and has a characteristic as a composite plating film.

このように、陰極2にペースト4を塗布し、陽極1に保液部材3にめっき液6を含浸させるようにしているので、次の利点がある。
(1)めっき液6がペースト4と保液部材3に含まれるだけであるので、従来のめっき槽にめっき液6を貯留する場合に比べてめっき液6の使用量を大幅に抑制できる。このため、大掛かりな設備が不要となり、めっき液6のメンテナンスや廃液処理も簡略化できる。
(2)ペースト4にめっき液6に粒子7を混合したものを使用しているので、高濃度のめっき皮膜を形成できる。
(3)形成されためっき被膜では、めっき液6の組成物による効果に加えて、粒子7による効果をも発揮させることができる。例えば、硬度の高いNiめっきに、フッ素樹脂粒子を組み合わせると、耐摩耗性が高く、ころがり抵抗の低いという効果を発揮させることができ、機械摺動部や軸受部に使用できる。また、電気抵抗値の低いAgめっきに、昇華温度の低い金属材料(酸化亜鉛)粒子を組み合わせると、電気的抵抗が低く、発生するアークを冷却して消弧させることができ、電気接点に使用可能である。硬度の高いNiめっきに、フッ素樹脂粒子を組み合わせると、耐摩耗性が高く、すべり抵抗を低くすることができ、金型に使用すると、優れた離形性を発揮させることができる。
Thus, since the paste 4 is applied to the cathode 2 and the anode 1 is impregnated with the plating solution 6 in the liquid retaining member 3, the following advantages are obtained.
(1) Since the plating solution 6 is only contained in the paste 4 and the liquid retaining member 3, the usage amount of the plating solution 6 can be significantly suppressed as compared with the case where the plating solution 6 is stored in a conventional plating tank. For this reason, a large-scale installation becomes unnecessary and the maintenance of the plating solution 6 and the waste liquid treatment can be simplified.
(2) Since the paste 4 in which the particles 7 are mixed with the plating solution 6 is used, a high-concentration plating film can be formed.
(3) In the formed plating film, in addition to the effect by the composition of the plating solution 6, the effect by the particles 7 can also be exhibited. For example, combining fluororesin particles with high hardness Ni plating can exhibit the effects of high wear resistance and low rolling resistance, and can be used for mechanical sliding parts and bearing parts. In addition, by combining Ag plating with low electrical resistance value with metal material (zinc oxide) particles with low sublimation temperature, the electrical resistance is low, and the generated arc can be cooled and extinguished, and used for electrical contacts Is possible. Combining fluororesin particles with high hardness Ni plating can provide high wear resistance and low sliding resistance, and when used in a mold, can exhibit excellent releasability.

以下の条件によりめっき皮膜を形成する実験を行った。
すなわち、陽極1には白金不溶解アノード、陰極2にはタフピッチ銅(C1100)、保液部材3にはウレタンスポンジ、めっき液6には市販のPd-Ni(パラジウム・ニッケル)めっき液、混合する粒子7にはシリカコート酸化亜鉛をそれぞれ使用した。また、以下の表1に記載するように、ペースト4に使用するめっき液6は10mlとした。まためっき液6に混入する粒子7には、一次粒子径が35nm(0.035μm)と20nm(0.02μm)の2種類を用意し、その重量は1.5g〜8.5gの範囲で4種類用意した。めっき時間は、5,10,15分のいずれかとし、陽極1と陰極2の間での電流密度は5〜25A/dm2とした。
An experiment for forming a plating film under the following conditions was performed.
That is, the anode 1 is a platinum insoluble anode, the cathode 2 is tough pitch copper (C1100), the liquid retaining member 3 is urethane sponge, and the plating solution 6 is mixed with a commercially available Pd—Ni (palladium / nickel) plating solution. For the particles 7, silica-coated zinc oxide was used. Moreover, as described in Table 1 below, the plating solution 6 used for the paste 4 was 10 ml. Further, two kinds of particles 7 mixed in the plating solution 6 having a primary particle diameter of 35 nm (0.035 μm) and 20 nm (0.02 μm) were prepared, and their weights were prepared in a range of 1.5 g to 8.5 g. The plating time was 5, 10, or 15 minutes, and the current density between the anode 1 and the cathode 2 was 5 to 25 A / dm 2 .

Figure 2018150587
Figure 2018150587

表1から明らかなように、粒子の一次粒子径を小さくし、含有する重量を大きくすることにより形成されるめっき皮膜の複合めっき粒子濃度を高くすることができた。また、電流密度を高めることで、得られるめっき被膜の膜厚を大きくすることができた。   As is clear from Table 1, the composite plating particle concentration of the plating film formed can be increased by reducing the primary particle diameter of the particles and increasing the contained weight. Moreover, the film thickness of the plating film obtained was able to be enlarged by raising a current density.

本発明の第1態様のめっき形成方法は、
陰極2の片面に、めっき液6に粒子7を混合してなるペースト4を塗布し、
陽極1の片面に、前記めっき液6を含浸した保液部材3を配置し、
前記陰極2と前記陽極1とを対向させて、前記保液部材3と前記ペースト4とを互いに接触させ、
前記陰極2と前記陽極1との間に電圧を印加することにより、前記陰極2の片面にめっきを形成する。
The plating formation method of the first aspect of the present invention includes:
On one side of the cathode 2, a paste 4 obtained by mixing particles 7 in a plating solution 6 is applied,
A liquid retaining member 3 impregnated with the plating solution 6 is disposed on one surface of the anode 1,
With the cathode 2 and the anode 1 facing each other, the liquid retaining member 3 and the paste 4 are brought into contact with each other,
By applying a voltage between the cathode 2 and the anode 1, plating is formed on one side of the cathode 2.

第1態様のめっき形成方法によれば、陽極1の片面に保液部材3を配置し、陰極2の片面にペースト4を塗布するだけでめっき皮膜を形成することができる。したがって、大掛かりな設備や大量のめっき液6を必要とすることなく安価にめっき皮膜を形成できる。   According to the plating method of the first aspect, the plating film can be formed simply by disposing the liquid retaining member 3 on one side of the anode 1 and applying the paste 4 on one side of the cathode 2. Therefore, a plating film can be formed at low cost without requiring large-scale equipment or a large amount of plating solution 6.

本発明の第2態様のめっき形成方法は、
前記ペースト4は界面活性剤を混合されている。
The plating method of the second aspect of the present invention is
The paste 4 is mixed with a surfactant.

第2態様のめっき形成方法によれば、めっき面の濡れ性を向上し、無めっき、ピットなどのめっきの欠陥を防止し、めっき液6からのミストの発生を抑制できる。   According to the plating formation method of the second aspect, the wettability of the plating surface can be improved, plating defects such as no plating and pits can be prevented, and generation of mist from the plating solution 6 can be suppressed.

本発明の第3態様のめっき形成方法は、前記粒子7を、金属又は樹脂のいずれかで構成している。   In the plating forming method of the third aspect of the present invention, the particles 7 are made of either metal or resin.

本発明の第4態様のめっき形成方法は、前記粒子7が、0.02μm以上、0.6μm以下の粒径を有する。   In the plating method according to the fourth aspect of the present invention, the particles 7 have a particle size of 0.02 μm or more and 0.6 μm or less.

第4態様のめっき形成方法によれば、粒子7の粒径を0.02μm以上、0.6μm以下の範囲としたので、電流が粒子の中に回り込み、効率よく流れるという効果が得られる。   According to the plating method of the fourth aspect, since the particle size of the particles 7 is in the range of 0.02 μm or more and 0.6 μm or less, an effect that current flows around the particles and efficiently flows can be obtained.

本発明の第5態様のめっき形成方法は、前記粒子7が、前記ペースト4に対して10重量%以上、72重量%以下である。   In the plating method of the fifth aspect of the present invention, the particles 7 are 10 wt% or more and 72 wt% or less with respect to the paste 4.

第5態様のめっき形成方法によれば、ペースト4であるので粒子7を高濃度に含有させることができるので、高濃度のめっき皮膜を形成可能となる。   According to the plating formation method of the fifth aspect, since the paste 4 is used, the particles 7 can be contained at a high concentration, so that a high concentration plating film can be formed.

本発明の第6態様のめっき形成方法は、前記保液部材3にはスポンジを使用する。   In the plating method of the sixth aspect of the present invention, a sponge is used for the liquid retaining member 3.

本発明に係るめっきの形成方法は、機械摺動部、電気接点、金型表面等、種々の材料の表面にめっき皮膜を形成するために使用できる。   The plating forming method according to the present invention can be used to form plating films on the surfaces of various materials such as mechanical sliding parts, electrical contacts, and mold surfaces.

1…陽極
2…陰極
3…保液部材
4…ペースト
5…直流電源
6…めっき液
7…粒子
DESCRIPTION OF SYMBOLS 1 ... Anode 2 ... Cathode 3 ... Liquid holding member 4 ... Paste 5 ... DC power supply 6 ... Plating solution 7 ... Particle

Claims (6)

陰極の片面に、めっき液に粒子を混合してなるペーストを塗布し、
陽極の片面に、前記めっき液を含浸した保液部材を配置し、
前記陰極と前記陽極とを対向させて、前記保液部材と前記ペーストとを互いに接触させ、
前記陰極と前記陽極との間に電圧を印加することにより、前記陰極の片面にめっきを形成する、めっきの形成方法。
On one side of the cathode, apply a paste made by mixing particles in the plating solution,
A liquid retaining member impregnated with the plating solution is disposed on one side of the anode,
With the cathode and the anode facing each other, the liquid retaining member and the paste are brought into contact with each other,
A plating method, wherein a voltage is applied between the cathode and the anode to form a plating on one side of the cathode.
前記ペーストは界面活性剤を混合されている、請求項1に記載のめっきの形成方法。   The plating method according to claim 1, wherein the paste is mixed with a surfactant. 前記粒子は、金属又は樹脂のいずれかからなる、請求項1又は2に記載のめっきの形成方法。   The method for forming a plating according to claim 1, wherein the particles are made of either metal or resin. 前記粒子は、0.02μm以上、0.6μm以下の粒径を有する、請求項1から3のいずれか1項に記載のめっきの形成方法。   The plating method according to claim 1, wherein the particles have a particle size of 0.02 μm or more and 0.6 μm or less. 前記粒子は、前記ペーストに対して10重量%以上、72重量%以下である、請求項1から4のいずれか1項に記載のめっきの形成方法。   5. The method of forming a plating according to claim 1, wherein the particles are 10% by weight or more and 72% by weight or less with respect to the paste. 前記保液部材はスポンジである、請求項1から5のいずれか1項に記載のめっきの形成方法。   The method for forming a plating according to claim 1, wherein the liquid retaining member is a sponge.
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CN201780085930.3A CN110268103A (en) 2017-03-13 2017-12-13 The forming method of coating
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Cited By (1)

* Cited by examiner, † Cited by third party
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JP2022025290A (en) * 2020-07-29 2022-02-10 トヨタ自動車株式会社 Forming method of silver film

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CN114197027A (en) * 2021-11-29 2022-03-18 深圳市鼎华芯泰科技有限公司 Board grinding method and board grinding equipment for circuit board

Family Cites Families (10)

* Cited by examiner, † Cited by third party
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CN104853578B (en) * 2015-05-16 2018-12-18 深圳市鸿富诚屏蔽材料有限公司 A kind of electromagnetic shielding conductive foam and preparation method thereof
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Cited By (2)

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