JP2018110231A - Igbt半導体構造 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 239000002019 doping agent Substances 0.000 claims abstract description 33
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 16
- -1 GaAs compound Chemical class 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract 4
- 239000011229 interlayer Substances 0.000 abstract 3
- 238000000407 epitaxy Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 101000999691 Human herpesvirus 2 Transcriptional regulator ICP22 homolog Proteins 0.000 description 1
- 229910010052 TiAlO Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
【解決手段】は、それぞれがGaAs化合物を含有しているか、またはそれぞれGaAs化合物から成る、p+基板と、n-層と、n-層に接している少なくとも1つのp領域と、p領域に接している少なくとも1つのn+領域と、誘電層と、3つの端子コンタクトと、を有しており、p領域は、n-層と共に第1のpn接合部を形成しており、n+領域は、少なくとも1つのp領域と共に第2のpn接合部を形成しており、誘電層は、第1のpn接合部および第2のpn接合部を覆っており、第2の端子コンタクトは、フィールドプレートとして誘電層の上に形成されており、p+基板とn-層との間には、1μm〜50μmの層厚(D3)および1012〜1017cm-3のドーパント濃度を備えており、かつドープされた中間層が配置されており、中間層は、少なくともp+基板と素材結合によって結合されている。
【選択図】図1
Description
Claims (16)
- 上面(12)および下面(22)を備えているIGBT半導体構造(10)において、
前記IGBT半導体構造(10)の前記下面(22)に形成されており、5×1018〜5×1020cm-3のドーパント濃度および50〜500μmの層厚(D1)を有しており、かつGaAs化合物を含有しているか、またはGaAs化合物から成る、p+基板(24)と、
1012〜1017cm-3のドーパント濃度および10〜300μmの層厚(D2)を備えており、かつGaAs化合物を含有しているか、またはGaAs化合物から成る、n-層(28)と、
1014〜1018cm-3のドーパント濃度を備えており、かつGaAs化合物を含有しているか、またはGaAs化合物から成る、前記n-層(28)に接している少なくとも1つのp領域(32)と、
少なくとも1019cm-3のドーパント濃度を備えており、かつGaAs化合物を含有しているか、またはGaAs化合物から成る、前記p領域(32)に接している少なくとも1つのn+領域(34)と、
誘電層(20)と、
前記IGBT半導体構造(10)の前記下面(22)と導電的に接続されており、かつ金属または金属化合物を含有しているか、または金属または金属化合物から成る、第1の端子コンタクト(14)と、
それぞれが、金属または金属化合物を含有しているか、または金属または金属化合物から成る、第2の端子コンタクト(16)および第3の端子コンタクト(18)と、
を有しており、
前記少なくとも1つのp領域(32)は、前記n-層(28)と共に、第1のpn接合部(36)を形成しており、
前記少なくとも1つのn+領域(34)は、前記少なくとも1つのp領域(32)と共に、第2のpn接合部(38)を形成しており、
前記誘電層(20)は、少なくとも、前記第1のpn接合部(36)および前記第2のpn接合部(38)を覆っており、かつ前記n-層(28)、前記p領域(32)および前記n+領域(34)と素材結合によって結合されており、
前記第2の端子コンタクト(16)は、フィールドプレートとして、前記誘電層(20)の上に形成されており、
前記第3の端子コンタクト(18)は、前記少なくとも1つのp領域(32)および前記少なくとも1つのn+領域(34)と導電的に接続されている、
IGBT半導体構造(10)において、
前記p+基板(24)と前記n-層(28)との間には、1μm〜50μmの層厚(D3)および1012〜1017cm-3のドーパント濃度を備えており、かつドープされた中間層(26)が配置されており、
前記中間層(26)は、少なくとも、前記p+基板(24)と素材結合によって結合されている、ことを特徴とする
IGBT半導体構造(10)。 - 前記中間層(26)は、p型ドープされて形成されていることを特徴とする、
請求項1記載のIGBT半導体構造(10)。 - 前記中間層(26)のドーパント濃度は、前記p+基板(24)のドーパント濃度よりも低くされているか、または前記中間層(26)のドーパント濃度は、前記p+基板(24)のドーパント濃度の、係数2〜5オーダ未満の係数までの間の範囲にあることを特徴とする、
請求項2記載のIGBT半導体構造(10)。 - 前記中間層(26)は、亜鉛および/またはケイ素を含有していることを特徴とする、
請求項2または3記載のIGBT半導体構造(10)。 - 前記中間層(26)は、n型ドープされて形成されていることを特徴とする、
請求項1記載のIGBT半導体構造(10)。 - 前記中間層(26)は、ケイ素および/またはスズを含有していることを特徴とする、
請求項5記載のIGBT半導体構造(10)。 - 前記中間層(26)のドーパント濃度は、前記n-層(28)のドーパント濃度よりも係数100まで程度低いことを特徴とする、
請求項5または6記載のIGBT半導体構造(10)。 - 前記IGBT半導体構造(10)は、n型ドープされたバッファ層(40)を有しており、前記バッファ層(40)は、前記中間層(26)と前記n-層(28)との間に配置されており、1012〜1017cm-3のドーパント濃度および1μm〜50μmの層厚(D4)を有しており、かつGaAs化合物を含有しているか、またはGaAs化合物から成ることを特徴とする、
請求項1から7までのいずれか1項記載のIGBT半導体構造(10)。 - 前記IGBT半導体構造(10)は、トレンチ型のIGBT半導体構造(10)として形成されており、前記誘電層(20)は、前記IGBT半導体構造(10)の前記上面(12)に対して垂直に延びていることを特徴とする、
請求項1から8までのいずれか1項記載のIGBT半導体構造(10)。 - 前記p+基板(24)は、亜鉛を含有していることを特徴とする、
請求項1から9までのいずれか1項記載のIGBT半導体構造(10)。 - 前記n-層(28)および/または前記n+領域(34)は、ケイ素および/またはクロムおよび/またはパラジウムおよび/またはスズを含有していることを特徴とする、
請求項1から10までのいずれか1項記載のIGBT半導体構造(10)。 - 前記IGBT半導体構造(10)は、モノリシックに形成されていることを特徴とする、
請求項1から11までのいずれか1項記載のIGBT半導体構造(10)。 - 前記IGBT半導体構造(10)の全高(H1)は、最大で150〜500μmであることを特徴とする、
請求項1から12までのいずれか1項記載のIGBT半導体構造(10)。 - 前記p領域(32)および/または前記n+領域(34)は、前記IGBT半導体構造(10)の前記上面(12)において、楕円形または真円形に形成されていることを特徴とする、
請求項1から13までのいずれか1項記載のIGBT半導体構造(10)。 - 前記IGBT半導体構造(10)は、1mm〜15mmまでの辺長(K1,K2)または直径(A1)を有していることを特徴とする、
請求項1から14までのいずれか1項記載のIGBT半導体構造(10)。 - 前記誘電層(20)は、堆積された酸化物を含有しており、かつ10nm〜1μmまでの層厚(D5)を有していることを特徴とする、
請求項1から15までのいずれか1項記載のIGBT半導体構造(10)。
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DE102016015475.6A DE102016015475B3 (de) | 2016-12-28 | 2016-12-28 | IGBT Halbleiterstruktur |
DE102016015475.6 | 2016-12-28 |
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US20180182874A1 (en) | 2018-06-28 |
CN114664922A (zh) | 2022-06-24 |
US11171226B2 (en) | 2021-11-09 |
EP3343636A1 (de) | 2018-07-04 |
JP2021005740A (ja) | 2021-01-14 |
JP7283768B2 (ja) | 2023-05-30 |
EP3343636B1 (de) | 2020-07-08 |
CN108258030A (zh) | 2018-07-06 |
JP6926366B2 (ja) | 2021-08-25 |
DE102016015475B3 (de) | 2018-01-11 |
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