JP6603349B2 - Iii−v族半導体ダイオード - Google Patents
Iii−v族半導体ダイオード Download PDFInfo
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- JP6603349B2 JP6603349B2 JP2018056494A JP2018056494A JP6603349B2 JP 6603349 B2 JP6603349 B2 JP 6603349B2 JP 2018056494 A JP2018056494 A JP 2018056494A JP 2018056494 A JP2018056494 A JP 2018056494A JP 6603349 B2 JP6603349 B2 JP 6603349B2
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- 239000004065 semiconductor Substances 0.000 title claims description 67
- 230000007547 defect Effects 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 24
- 239000002019 doping agent Substances 0.000 claims description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- -1 GaAs compound Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 238000011161 development Methods 0.000 description 17
- 230000018109 developmental process Effects 0.000 description 17
- 230000002950 deficient Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
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Description
p-中間層が、10μm〜25μmまでの間の厚さを有しており、かつn-層に関しては、40μm〜90μmの間の厚さによって、約900Vの逆電圧が生じる。
p-中間層が、25μm〜35μmまでの間の厚さを有しており、かつn-層に関しては、40μm〜70μmの間の厚さによって、約1,200Vの逆電圧が生じる。
p-中間層が、35μm〜50μmまでの間の厚さを有しており、かつn-層に関しては、70μm〜150μm〜70μmの間の厚さによって、約1,500Vの逆電圧が生じる。
p-中間層が、10μm〜25μmまでの間の厚さを有しており、かつn-層に関しては、60μm〜110μmの間の厚さを有している。
p-中間層が、10μm〜25μmまでの間の厚さを有しており、かつn-層に関しては、70μm〜140μmの間の厚さを有している。
p-中間層が、35μm〜50μmまでの間の厚さを有しており、かつn-層に関しては、80μm〜200μmの間の厚さを有している。
Claims (13)
- スタック型のIII−V族半導体ダイオード(10)であって、
上面、下面、少なくとも1019N/cm3のドーパント濃度および10μm〜675μmの層厚(D1)を備えており、かつGaAs化合物を含有しているか、またはGaAs化合物から成るn+層(12)と、
上面、下面、1012〜1016N/cm3のドーパント濃度および10〜300μmの層厚(D2)を備えており、かつGaAs化合物を含有しているか、またはGaAs化合物から成るn-層(14)と、
上面、下面、5×1018〜5×1020N/cm3のドーパント濃度および2μmよりも大きい層厚(D3)を備えており、かつGaAs化合物を含有しているか、またはGaAs化合物から成るp+層(18)と、
を有しており、
前記層は、上記の順序で相互に並んでおり、かつモノリシックに形成されており、
前記n+層(12)または前記p+層(18)は、基板として形成されており、
前記n-層(14)の下面は、素材結合によって、前記n+層(12)の上面と結合されている、スタック型のIII−V族半導体ダイオード(10)において、
前記スタック型のIII−V族半導体ダイオード(10)は、0.5μm〜50μmの間の層厚(D4)を備えた第1の欠陥層(16)を有しており、
前記第1の欠陥層(16)は、前記n-層内に配置されており、
前記第1の欠陥層(16)は、1×1013N/cm3〜5×1016N/cm3の間の範囲にある欠陥濃度を有しており、
前記第1の欠陥層(16)は、Crおよび/またはインジウムおよび/またはアルミニウムを含有していることを特徴とする、
スタック型のIII−V族半導体ダイオード(10)。 - 前記第1の欠陥層(16)から前記n-層(14)の下面までの距離(A)は、前記n-層(14)の層厚(D2)の少なくとも半分であることを特徴とする、
請求項1記載のIII−V族半導体ダイオード(10)。 - 前記半導体ダイオード(10)は、第2の欠陥層(24)を有しており、前記第2の欠陥層(24)は、0.5μm〜50μmの間の層厚および1×1013N/cm3〜5×1016N/cm3の間の欠陥濃度を有しており、かつ前記第2の欠陥層(24)から前記n-層の上面までの距離は、前記n-層(14)の層厚(D2)の高々半分であることを特徴とする、
請求項1または2記載のIII−V族半導体ダイオード(10)。 - 前記第1の欠陥層(16)および/または第2の欠陥層(24)は、それぞれ、第1の欠陥濃度を有する第1の層領域および第2の欠陥濃度を有する第2の層領域を有していることを特徴とする、
請求項1から3までのいずれか1項記載のIII−V族半導体ダイオード(10)。 - 前記欠陥濃度は、前記第1の欠陥層(16)の層厚(D4)にわたり、かつ/または第2の欠陥層(24)の層厚にわたり、統計的な分布に従うことを特徴とする、
請求項1から4までのいずれか1項記載のIII−V族半導体ダイオード(10)。 - 前記第2の欠陥層(24)は、Crおよび/またはインジウムおよび/またはアルミニウムを含有していることを特徴とする、
請求項3記載のIII−V族半導体ダイオード(10)。 - 前記III−V族半導体ダイオードは、1μm〜50μmの層厚および1012〜1017N/cm3のドーパント濃度を備えており、かつnドープまたはpドープされた中間層(26)を有しており、前記中間層は、前記p+層(18)ならびに前記n-層(14)と素材結合により結合されていることを特徴とする、
請求項1から6までのいずれか1項記載のIII−V族半導体ダイオード(10)。 - 前記p+層(18)、前記n-層(14)および前記n+層(12)から成るスタック型の層構造(100)の全高は、高々150〜800μmであることを特徴とする、
請求項1から7までのいずれか1項記載のIII−V族半導体ダイオード(10)。 - 前記p+層(18)、前記n-層(14)および前記n+層(12)から成る前記スタック型の層構造(100)は、1mm〜10mmの間の長さの辺(L1、L2)を備えた矩形または正方形の表面を有していることを特徴とする、
請求項1から8までのいずれか1項記載のIII−V族半導体ダイオード(10)。 - 前記p+層(18)、前記n-層(14)および前記n+層(12)から成る前記スタック型の層構造(100)は、円形または楕円形または真円形の表面を有していることを特徴とする、
請求項1から8までのいずれか1項記載のIII−V族半導体ダイオード(10)。 - 前記半導体ダイオード(10)の前記p+層(18)が、接続コンタクト層に置換されており、前記接続コンタクト層は、金属または金属化合物を含んでいるか、もしくは金属または金属化合物から成り、かつショットキーコンタクトを形成していることを特徴とする、
請求項1から10までのいずれか1項記載のIII−V族半導体ダイオード(10)。 - 前記III−V族半導体ダイオード(10)は、モノリシックに形成されているか、または半導体ボンディングを有していることを特徴とする、
請求項1から11までのいずれか1項記載のIII−V族半導体ダイオード(10)。 - 前記半導体ボンディングは、前記p+層(18)と前記n-層(14)との間に、またはp-層と前記n-層(14)との間に形成されていることを特徴とする、
請求項12記載のIII−V族半導体ダイオード(10)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102017002935.0 | 2017-03-24 | ||
DE102017002935.0A DE102017002935A1 (de) | 2017-03-24 | 2017-03-24 | III-V-Halbleiterdiode |
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JP2018164084A JP2018164084A (ja) | 2018-10-18 |
JP6603349B2 true JP6603349B2 (ja) | 2019-11-06 |
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US (1) | US10312381B2 (ja) |
EP (1) | EP3379577B1 (ja) |
JP (1) | JP6603349B2 (ja) |
CN (1) | CN108630744B (ja) |
DE (1) | DE102017002935A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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DE102017011878A1 (de) | 2017-12-21 | 2019-06-27 | 3-5 Power Electronics GmbH | Stapelförmiges III-V-Halbleiterbauelement |
DE102019001459B3 (de) | 2019-03-04 | 2020-09-03 | 3-5 Power Electronics GmbH | Stapelförmige hochsperrende III-V-Leistungshalbleiterdiode |
DE102019003069B4 (de) | 2019-04-30 | 2023-06-01 | Azur Space Solar Power Gmbh | Stapelförmige hochsperrende lll-V-Halbleiterleistungsdioden |
DE102019003068A1 (de) | 2019-04-30 | 2020-11-05 | 3-5 Power Electronics GmbH | Stapelförmige hochsperrende lnGaAS-Halbleiterleistungsdiode |
DE102020001843A1 (de) | 2020-03-20 | 2021-09-23 | Azur Space Solar Power Gmbh | Stapelförmige hochsperrende InGaAs-Halbleiterleistungsdiode |
DE102020001841A1 (de) | 2020-03-20 | 2021-09-23 | Azur Space Solar Power Gmbh | Stapelförmige hochsperrende III-V-Halbleiterleistungsdiode |
DE102020001838A1 (de) | 2020-03-20 | 2021-09-23 | Azur Space Solar Power Gmbh | Stapelförmige hochsperrende lll-V-Halbleiterleistungsdiode |
DE102020001835A1 (de) | 2020-03-20 | 2021-09-23 | Azur Space Solar Power Gmbh | Stapelförmige hochsperrende lll-V-Halbleiterleistungsdiode |
DE102020001837B3 (de) | 2020-03-20 | 2021-08-26 | Azur Space Solar Power Gmbh | Stapelförmiges photonisches lll-V-Halbleiterbauelement |
DE102020001842A1 (de) | 2020-03-20 | 2021-09-23 | Azur Space Solar Power Gmbh | Stapelförmiges photonisches III-V-Halbleiterbauelement |
DE102020001840B3 (de) | 2020-03-20 | 2021-09-23 | Azur Space Solar Power Gmbh | Stapelförmiges photonisches III-V-Halbleiterbauelement |
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US3986192A (en) | 1975-01-02 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | High efficiency gallium arsenide impatt diodes |
US4381952A (en) | 1981-05-11 | 1983-05-03 | Rca Corporation | Method for fabricating a low loss varactor diode |
IL101966A (en) * | 1992-05-22 | 1998-04-05 | Ramot Ramatsity Authority For | Process for the production of MUILLAG N-I-P EDINESRA structure |
US6054369A (en) | 1997-06-30 | 2000-04-25 | Intersil Corporation | Lifetime control for semiconductor devices |
US7432522B2 (en) * | 2003-04-04 | 2008-10-07 | Qunano Ab | Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them |
JP4919700B2 (ja) * | 2005-05-20 | 2012-04-18 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
US8304805B2 (en) * | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
WO2013028983A1 (en) * | 2011-08-25 | 2013-02-28 | Aeroflex Colorado Springs Inc. | Wafer structure for electronic integrated circuit manufacturing |
CN103700712B (zh) | 2012-09-27 | 2017-05-03 | 比亚迪股份有限公司 | 一种快恢复二极管的结构及其制造方法 |
US9627517B2 (en) | 2013-02-07 | 2017-04-18 | Infineon Technologies Ag | Bipolar semiconductor switch and a manufacturing method therefor |
KR102266960B1 (ko) * | 2016-03-02 | 2021-06-18 | 한국전자통신연구원 | 쇼트키 다이오드 및 이의 제조 방법 |
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EP3379577B1 (de) | 2020-06-03 |
US20180277687A1 (en) | 2018-09-27 |
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CN108630744A (zh) | 2018-10-09 |
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