JP2018110166A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 232
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims description 79
- 238000005468 ion implantation Methods 0.000 claims description 64
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 41
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 83
- 230000001133 acceleration Effects 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 15
- 230000005684 electric field Effects 0.000 description 8
- 238000002513 implantation Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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Abstract
Description
実施の形態1にかかる半導体装置の構造について、炭化珪素(SiC)を用いたトレンチゲート型MOSFET(SiC−MOSFET)を例に説明する。図1は、実施の形態1にかかる半導体装置の活性領域の構造を示す断面図である。図1には、隣り合う単位セル(素子の機能単位)間の構造を示し、これらの単位セルに隣接するように繰り返し配置された他の単位セルや、活性領域の周囲を囲むエッジ終端領域を図示省略する(図9においても同様)。図1に示す実施の形態1にかかる半導体装置は、電流駆動を担う活性領域において、炭化珪素からなる半導体基体(炭化珪素基体)10のおもて面側に、トレンチゲート型のMOSゲート構造と、コンタクトトレンチ8と、を備える。
次に、実施の形態2にかかる半導体装置の構造について説明する。図9は、実施の形態2にかかる半導体装置の構造を示す断面図である。実施の形態2にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、次の2点である。1つ目の相違点は、第5p型ベース領域25の内部に第3p++型ベース領域(図1の符号23に相当)が設けられていない点である。2つ目の相違点は、コンタクトトレンチ8の底面8aに沿って設けられた第4p+型ベース領域44がコンタクトトレンチ8の底面コーナー部8cまで延在し、コンタクトトレンチ8の底面コーナー部8cを覆っている点である。すなわち、第4p+型ベース領域44の幅は、コンタクトトレンチ8の幅よりも広い。そして、第4p+型ベース領域44は、p型ベース領域3の角部3aの電界を緩和してパンチスルーを防止するとともに、ソース電極11とのコンタクト抵抗を低減させる機能を有する。
2 n-型ドリフト層
2a n-型低濃度ドリフト層
2b n型高濃度ドリフト層
3 p型ベース領域
3a p型ベース領域の角部
3b 第1p型ベース領域の、ゲートトレンチの側壁に沿った部分
4 n+型ソース層
5 ゲートトレンチ
5a ゲートトレンチの底面
5b ゲートトレンチの側壁
6 ゲート絶縁膜
7 ゲート電極
8 コンタクトトレンチ
8a コンタクトトレンチの底面
8b コンタクトトレンチの側壁
8c コンタクトトレンチの底面コーナー部
9 層間絶縁膜
9a コンタクトホール
10 炭化珪素基体
11 ソース電極
12 ドレイン電極
21 第1p型ベース領域
22 第2p+型ベース領域
23 第3p++型ベース領域
24,44 第4p+型ベース領域
25 第5p型ベース領域
31 酸化膜
32,33,35,37,51,53、 イオン注入
34,36,38 p型領域
52,54 p+型領域
θ1,θ2 イオン注入の注入角度
Claims (8)
- 第1導電型の半導体基板のおもて面に設けられた、前記半導体基板よりも不純物濃度の低い第1導電型の第1半導体層と、
前記第1半導体層に設けられた第1トレンチと、
前記第1トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記第1トレンチの側壁に設けられた前記ゲート絶縁膜を挟んで前記ゲート電極と対向する第1導電型の第2半導体層と、
前記第1半導体層と前記第2半導体層との間に設けられ、前記第1トレンチの側壁に設けられた前記ゲート絶縁膜を挟んで前記ゲート電極と対向する第2導電型の第1半導体領域と、
隣り合う前記第1トレンチ間に設けられた第2トレンチと、
前記第2トレンチの側壁に沿って設けられ、前記第1半導体領域に接する第2導電型の第2半導体領域と、
前記第2トレンチの底面コーナー部付近に選択的に設けられた第2導電型の第3半導体領域と、
前記第2トレンチの底面に沿って設けられ、前記第2トレンチの底面の少なくとも一部に露出された第2導電型の第4半導体領域と、
前記第2半導体領域および前記第4半導体領域に接し、前記第2トレンチの底面に沿って前記第4半導体領域よりも深く設けられた第2導電型の第5半導体領域と、
前記第2トレンチの内部に埋め込まれた第1電極と、
前記半導体基板の裏面に設けられた第2電極と、
を備え、
前記第3半導体領域の不純物濃度は、前記第5半導体領域の不純物濃度よりも高く、
前記第3半導体領域は、前記第5半導体領域の内部に少なくとも1つ以上配置されていることを特徴とする半導体装置。 - 第1導電型の半導体基板のおもて面に設けられた、前記半導体基板よりも不純物濃度の低い第1導電型の第1半導体層と、
前記第1半導体層に設けられた第1トレンチと、
前記第1トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記第1トレンチの側壁に設けられた前記ゲート絶縁膜を挟んで前記ゲート電極と対向する第1導電型の第2半導体層と、
前記第1半導体層と前記第2半導体層との間に設けられ、前記第1トレンチの側壁に設けられた前記ゲート絶縁膜を挟んで前記ゲート電極と対向する第2導電型の第1半導体領域と、
隣り合う前記第1トレンチ間に設けられた第2トレンチと、
前記第2トレンチの側壁に沿って設けられ、前記第1半導体領域に接する第2導電型の第2半導体領域と、
前記第2半導体領域に接し、前記第2トレンチの底面コーナー部に設けられ、前記第2トレンチの底面コーナー部に露出された第2導電型の第3半導体領域と、
前記第3半導体領域に接し、前記第2トレンチの底面に沿って設けられ、前記第2トレンチの底面全体に露出された第2導電型の第4半導体領域と、
前記第2半導体領域、前記第3半導体領域および前記第4半導体領域に接し、前記第2トレンチの底面に沿って前記第4半導体領域よりも深く設けられた第2導電型の第5半導体領域と、
前記第2トレンチの内部に埋め込まれた第1電極と、
前記半導体基板の裏面に設けられた第2電極と、
を備えることを特徴とする半導体装置。 - 前記第1半導体領域の不純物濃度は、前記第4半導体領域の不純物濃度と同じであることを特徴とする請求項1または2に記載の半導体装置。
- 前記第1半導体層は、
前記半導体基板のおもて面に設けられた、前記半導体基板よりも不純物濃度の低い第1導電型の第3半導体層と、
前記第3半導体層の、前記半導体基板側に対して反対側の面に設けられた、前記第3半導体層よりも不純物濃度の高い第1導電型の第4半導体層と、を有し、
前記第4半導体領域は、前記第2トレンチの底面から前記第3半導体層と前記第4半導体層との界面に達しない深さで設けられていることを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。 - 前記第1半導体領域の不純物濃度は、前記第2半導体領域の不純物濃度と同じであることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記半導体基板は、炭化珪素基板であることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- ゲート絶縁膜を介して設けられたゲート電極が埋め込まれた第1トレンチと、第1導電型の第1半導体層と当該第1半導体層よりも不純物濃度の高い第1導電型の第2半導体層との間に設けられ、前記第1トレンチの側壁に設けられた前記ゲート絶縁膜を挟んで前記ゲート電極と対向する第2導電型半導体領域と、隣り合う前記第1トレンチ間に設けられた第2トレンチと、前記第2トレンチの内壁で前記第2半導体層および前記第2導電型半導体領域に接する第1電極と、を備えた半導体装置の製造方法であって、
第1導電型の半導体基板のおもて面に、前記半導体基板よりも不純物濃度の低い第1導電型の前記第1半導体層を形成する第1工程と、
前記第1半導体層の上に、前記第1半導体層よりも不純物濃度の高い第1導電型の前記第2半導体層を形成する第2工程と、
前記第2半導体層の上に、所定領域が開口したマスク膜を形成する第3工程と、
前記マスク膜をマスクとしてエッチングを行い、前記第1半導体層に前記第2トレンチを形成する第4工程と、
前記マスク膜をマスクとして、前記半導体基板のおもて面に垂直な方向に対して斜めの方向から第2導電型不純物を第1イオン注入する第5工程と、
前記マスク膜をマスクとして、前記第1イオン注入よりも前記半導体基板のおもて面に垂直な方向に対して浅い角度で斜めの方向から第2導電型不純物を第2イオン注入する第6工程と、
前記マスク膜をマスクとして、前記半導体基板のおもて面に垂直な方向から第2導電型不純物を第3イオン注入する第7工程と、
前記マスク膜を除去した状態で、前記第2半導体層側から第2導電型不純物を第4イオン注入する第8工程と、
を含み、
前記第5工程、前記第6工程および前記第7工程により前記第2導電型半導体領域を形成することを特徴とする半導体装置の製造方法。 - 前記第5工程では、前記第2トレンチの側壁に第2導電型不純物を前記第1イオン注入し、
前記第6工程では、前記第2トレンチの底面コーナー部に複数回第2導電型不純物を前記第2イオン注入し、
前記第7工程では、前記第2トレンチの底面に複数回第2導電型不純物を前記第3イオン注入することを特徴とする請求項7に記載の半導体装置の製造方法。
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