JP2018082065A - 研磨パッドおよび研磨方法 - Google Patents
研磨パッドおよび研磨方法 Download PDFInfo
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- JP2018082065A JP2018082065A JP2016223630A JP2016223630A JP2018082065A JP 2018082065 A JP2018082065 A JP 2018082065A JP 2016223630 A JP2016223630 A JP 2016223630A JP 2016223630 A JP2016223630 A JP 2016223630A JP 2018082065 A JP2018082065 A JP 2018082065A
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- polishing
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- 238000005498 polishing Methods 0.000 title claims abstract description 312
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 88
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000002245 particle Substances 0.000 claims abstract description 40
- 239000003513 alkali Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004745 nonwoven fabric Substances 0.000 claims abstract description 5
- 229920002635 polyurethane Polymers 0.000 claims abstract description 5
- 239000004814 polyurethane Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 15
- 238000001139 pH measurement Methods 0.000 claims description 8
- 239000002585 base Substances 0.000 abstract description 23
- 239000000463 material Substances 0.000 abstract description 22
- 239000006061 abrasive grain Substances 0.000 abstract description 18
- 235000012431 wafers Nutrition 0.000 description 122
- 230000007246 mechanism Effects 0.000 description 15
- 238000007517 polishing process Methods 0.000 description 11
- 239000012530 fluid Substances 0.000 description 10
- 238000005247 gettering Methods 0.000 description 10
- 230000032258 transport Effects 0.000 description 10
- 239000000126 substance Substances 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 2
- 239000000920 calcium hydroxide Substances 0.000 description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- QNEFNFIKZWUAEQ-UHFFFAOYSA-N carbonic acid;potassium Chemical compound [K].OC(O)=O QNEFNFIKZWUAEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
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- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
砥粒とアルカリ粒子が混入された研磨パッドを用いて、ウエーハを研磨するウエーハの研磨方法であって、
設定された研磨条件に基づき回転するウエーハに研磨パッドを当接させつつ回転させて、純水を研磨パッドに供給してアルカリ性の研磨液を生成し該ウエーハに作用させて研磨する研磨工程と、
該研磨工程中に該研磨液のpH値を測定する測定工程と、
測定されたpH値に基づき該研磨条件を補正する補正工程と、を含み、
補正された新たな研磨条件で研磨することによりウエーハの研磨状態を一定に保つ、ウエーハの研磨方法。
38a,38b 研削ユニット
48 研磨ユニット
56 水平移動ユニット
61 電磁弁
62 純水供給源
63 受け部
65 排水管
67 pH計測部
78b 研磨パッド
79 流体供給路
80 ドレスユニット
84 ドレッシングパッド
85 昇降機構
90 基材
90a 研磨面
91 砥粒
92 アルカリ粒子
100 制御部
W ウエーハ
WR 裏面
WS 表面
Claims (3)
- ウエーハを研磨するための研磨パッドであって、
ポリウレタンおよび不織布からなる基材中にシリカ粒子とアルカリ粒子とを含む研磨パッド。 - 該アルカリ粒子の水への溶解度は、25℃において0.17重量%以下である、請求項1に記載の研磨パッド。
- 請求項1又は2に記載の研磨パッドを用いてウエーハを研磨する研磨方法であって、
該研磨パッドに純水を供給することによりアルカリ性の研磨液を生成し、該研磨パッドをウエーハに当接させることにより該ウエーハを研磨する研磨工程と、
該研磨工程中に該研磨液のpH値を測定するpH測定工程と、
該pH測定工程にて測定されたpH値に基づき、少なくともウエーハの研磨時間および該研磨パッドへの純水の供給量を変更する研磨条件変更工程と、
を含む、研磨方法。
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JP2018082065A true JP2018082065A (ja) | 2018-05-24 |
JP6851794B2 JP6851794B2 (ja) | 2021-03-31 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10315135A (ja) * | 1997-05-23 | 1998-12-02 | Nec Corp | 研磨溶液濃度の制御方法及び制御装置 |
JP2004031772A (ja) * | 2002-06-27 | 2004-01-29 | Yasuhiro Tani | 化学的機械的研磨パッド及びその製造方法 |
JP2004071833A (ja) * | 2002-08-06 | 2004-03-04 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの両面研磨方法 |
JP2008091383A (ja) * | 2006-09-29 | 2008-04-17 | Sumco Techxiv株式会社 | 半導体ウェハの粗研磨方法、及び半導体ウェハの研磨装置 |
JP2009094233A (ja) * | 2007-10-05 | 2009-04-30 | Showa Denko Kk | 半導体基板用研磨組成物 |
JP2009279684A (ja) * | 2008-05-20 | 2009-12-03 | Fujibo Holdings Inc | 研磨パッドおよび研磨パッドの製造方法 |
JP2010056127A (ja) * | 2008-08-26 | 2010-03-11 | Hitachi Chem Co Ltd | シリコン膜用cmpスラリー |
JP2010225987A (ja) * | 2009-03-25 | 2010-10-07 | Disco Abrasive Syst Ltd | ウェーハの研磨方法及び研磨パッド |
-
2016
- 2016-11-16 JP JP2016223630A patent/JP6851794B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10315135A (ja) * | 1997-05-23 | 1998-12-02 | Nec Corp | 研磨溶液濃度の制御方法及び制御装置 |
JP2004031772A (ja) * | 2002-06-27 | 2004-01-29 | Yasuhiro Tani | 化学的機械的研磨パッド及びその製造方法 |
JP2004071833A (ja) * | 2002-08-06 | 2004-03-04 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの両面研磨方法 |
JP2008091383A (ja) * | 2006-09-29 | 2008-04-17 | Sumco Techxiv株式会社 | 半導体ウェハの粗研磨方法、及び半導体ウェハの研磨装置 |
JP2009094233A (ja) * | 2007-10-05 | 2009-04-30 | Showa Denko Kk | 半導体基板用研磨組成物 |
JP2009279684A (ja) * | 2008-05-20 | 2009-12-03 | Fujibo Holdings Inc | 研磨パッドおよび研磨パッドの製造方法 |
JP2010056127A (ja) * | 2008-08-26 | 2010-03-11 | Hitachi Chem Co Ltd | シリコン膜用cmpスラリー |
JP2010225987A (ja) * | 2009-03-25 | 2010-10-07 | Disco Abrasive Syst Ltd | ウェーハの研磨方法及び研磨パッド |
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