JP2018064362A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2018064362A JP2018064362A JP2016201095A JP2016201095A JP2018064362A JP 2018064362 A JP2018064362 A JP 2018064362A JP 2016201095 A JP2016201095 A JP 2016201095A JP 2016201095 A JP2016201095 A JP 2016201095A JP 2018064362 A JP2018064362 A JP 2018064362A
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- Prior art keywords
- switching element
- diode
- electrode
- semiconductor device
- plating
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Abstract
【解決手段】ハイサイド側のスイッチング素子SW1と、それに並列接続されるダイオードD1と、前記スイッチング素子SW1に直列接続されるローサイド側のスイッチング素子SW2と、それに並列接続されるダイオードD2とを備える。スイッチング素子SW1及びダイオードD1が導電性電極Eを介してそれぞれの電極面の垂直方向に隣接して積層される。スイッチング素子SW2及びダイオードD2が導電性電極Eを介してそれぞれの電極面の垂直方向に隣接して積層される。スイッチング素子SW1とスイッチング素子SW2とは、それぞれの電極面の垂直方向に隣接していない。
【選択図】図3
Description
本実施形態に係る半導体装置について、図1ないし図18を用いて説明する。本実施形態に係る半導体装置は、例えば、車載用のインバータであり、パワーMOSFET等のスイッチング素子を用い、ハイサイド側のスイッチング素子とローサイド側のスイッチング素子を備え、それぞれのスイッチング素子に対応するダイオード素子を備えるものである。本実施形態においては、各素子を積層構造とすることで寄生インダクタンスLを低減しつつ、スイッチング素子同士を隣接させて積層しない事により、放熱効果を高めるものである。
60 リードフレーム
61 リード
63 第1接続面
64 第2接続面
65(65a,65b) エッジ部
66(66a,66b) 外側部
67(67a,67b) 空隙
68 第3接続面
69 第4接続面
D1,D2 ダイオード
E 導電性電極
H1〜H5 放熱板
SW1,SW2 スイッチング素子
Claims (5)
- ハイサイド側の第1スイッチング素子と、
当該第1スイッチング素子に並列接続される第1ダイオード素子と、
前記第1スイッチング素子に直列接続されるローサイド側の第2スイッチング素子と、
当該第2スイッチング素子に並列接続される第2ダイオード素子とを備え、
前記第1スイッチング素子と前記第1ダイオード素子又は前記第2ダイオード素子とが、導電性電極を介してそれぞれの電極面の垂直方向に隣接して積層され、前記第2スイッチング素子と前記第1スイッチング素子に隣接するダイオード素子と異なる前記第1ダイオード素子又は前記第2ダイオード素子とが、導電性電極を介してそれぞれの電極面の垂直方向に隣接して積層され、前記第1スイッチング素子と前記第2スイッチング素子とがそれぞれの電極面の垂直方向に隣接していないことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記第1スイッチング素子及び前記第2スイッチング素子で発生する熱を放熱する放熱板を備え、
前記第1スイッチング素子のいずれか一方の電極面及び/又は前記第2スイッチング素子のいずれか一方の電極面が、前記放熱板と隣接していることを特徴とする半導体装置。 - 請求項1又は2に記載の半導体装置において、
前記第1ダイオード素子及び前記第2ダイオード素子が、SiC又はGaN基板で形成されていることを特徴とする半導体装置。 - 請求項1ないし3のいずれかに記載の半導体装置において、
前記第1スイッチング素子、前記第1ダイオード素子、前記第2スイッチング素子及び前記第2ダイオード素子と前記導電性電極とが、導電性ペースト又はめっきにより電気的に接続されていることを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記導電性ペースト、前記めっきの材料及び前記電極面の金属の融点がT/2>500(K)であることを特徴とする半導体装置。
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JP2016201095A JP2018064362A (ja) | 2016-10-12 | 2016-10-12 | 半導体装置 |
PCT/JP2017/036348 WO2018070343A1 (ja) | 2016-10-12 | 2017-10-05 | 半導体装置 |
US16/257,722 US20190229103A1 (en) | 2016-10-12 | 2019-01-25 | Semiconductor device |
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US11456736B2 (en) * | 2018-04-03 | 2022-09-27 | Siemens Energy Global GmbH & Co. KG | Circuit arrangement, power converter module, and method for operating the power converter module |
US11908767B2 (en) * | 2021-01-13 | 2024-02-20 | Mediatek Inc. | Semiconductor package structure |
Citations (3)
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JP2000164800A (ja) * | 1998-11-30 | 2000-06-16 | Mitsubishi Electric Corp | 半導体モジュール |
JP2005005593A (ja) * | 2003-06-13 | 2005-01-06 | Mitsubishi Electric Corp | 半導体パワーモジュール |
JP2006040926A (ja) * | 2004-07-22 | 2006-02-09 | Honda Motor Co Ltd | 電子回路装置 |
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JPS5955044A (ja) * | 1982-09-24 | 1984-03-29 | Mitsubishi Electric Corp | トランジスタスタツク |
JP6565542B2 (ja) * | 2015-09-25 | 2019-08-28 | トヨタ自動車株式会社 | 半導体装置 |
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JP2000164800A (ja) * | 1998-11-30 | 2000-06-16 | Mitsubishi Electric Corp | 半導体モジュール |
JP2005005593A (ja) * | 2003-06-13 | 2005-01-06 | Mitsubishi Electric Corp | 半導体パワーモジュール |
JP2006040926A (ja) * | 2004-07-22 | 2006-02-09 | Honda Motor Co Ltd | 電子回路装置 |
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