JP2018022756A - プラズマ処理装置及び試料の離脱方法 - Google Patents
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- 238000012545 processing Methods 0.000 title claims abstract description 67
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- 230000008569 process Effects 0.000 claims description 14
- 230000005611 electricity Effects 0.000 abstract 3
- 238000001179 sorption measurement Methods 0.000 description 63
- 230000003068 static effect Effects 0.000 description 28
- 238000003379 elimination reaction Methods 0.000 description 27
- 230000008030 elimination Effects 0.000 description 22
- 230000008034 disappearance Effects 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000006386 neutralization reaction Methods 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000005404 monopole Effects 0.000 description 1
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- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
Description
静電吸着した試料を前記試料台から離脱させる処理を開始後、前記高周波電力の供給を停止してから所定時間が経過後に前記直流電圧を所定の値から概0Vに変更させる制御を行う制御部をさらに備え、前記所定の値は、前記直流電圧が概0V時の前記試料の電位が概0Vとなる予め求められた値であり、前記所定時間は、前記処理のプラズマにより生成された荷電粒子が消失する時間またはアフターグロー放電が消失する時間に基づいて規定された時間であることを特徴とする。
Claims (10)
- 試料がプラズマ処理される処理室と、プラズマを生成するための高周波電力を供給する高周波電源と、前記試料を静電吸着させるための電極を具備し前記試料が載置される試料台と、前記電極に直流電圧を印加する直流電源とを備えるプラズマ処理装置において、
静電吸着した試料を前記試料台から離脱させる処理を開始後、前記高周波電力の供給を停止してから所定時間が経過後に前記直流電圧を所定の値から概0Vに変更させる制御を行う制御部をさらに備え、
前記所定の値は、前記直流電圧が概0V時の前記試料の電位が概0Vとなる予め求められた値であり、
前記所定時間は、前記処理のプラズマにより生成された荷電粒子が消失する時間またはアフターグロー放電が消失する時間に基づいて規定された時間であることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記電極が2個の場合、前記電極の一方に印加される直流電圧と前記電極の他方に印加される直流電圧の平均値が前記所定の値となるような直流電圧が前記電極の各々に印加されることを特徴とするプラズマ処理装置。 - 請求項1または請求項2に記載のプラズマ処理装置において、
前記所定の値は、前記処理中のプラズマ浮遊電位と概等電位の値であることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記所定の値は、−20〜−10Vまでの値であることを特徴とプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記所定時間は、0.1から3秒までの時間であることを特徴とするプラズマ処理装置。 - 試料が静電吸着した試料台から前記試料を離脱させる試料の離脱方法において、
前記試料台から前記試料を離脱させる処理を開始後、プラズマ生成用高周波電力の供給を停止してから所定時間が経過後に前記試料を前記試料台に静電吸着させるための電極に印加される直流電圧を所定の値から概0Vに変更し、
前記所定の値を前記直流電圧が概0V時の前記試料の電位が概0Vとなる予め求められた値とし、
前記所定時間を前記処理のプラズマにより生成された荷電粒子が消失する時間またはアフターグロー放電が消失する時間に基づいて規定された時間とすることを特徴とする試料の離脱方法。 - 請求項6に記載の試料の離脱方法において、
前記電極が2個の場合、前記電極の一方に印加される直流電圧と前記電極の他方に印加される直流電圧の平均値が前記所定の値となるような直流電圧を前記電極の各々に印加することを特徴とする試料の離脱方法。 - 請求項6または請求項7に記載の試料の離脱方法において、
前記所定の値は、前記処理中のプラズマ浮遊電位と概等電位の値であることを特徴とする試料の離脱方法。 - 請求項6に記載の試料の離脱方法において、
前記所定の値は、−20〜−10Vまでの値であることを特徴と試料の離脱方法。 - 請求項6に記載の試料の離脱方法において、
前記所定時間は、0.1から3秒までの時間であることを特徴とする試料の離脱方法。
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JP2016152424A JP6708358B2 (ja) | 2016-08-03 | 2016-08-03 | プラズマ処理装置及び試料の離脱方法 |
KR1020170004058A KR101883246B1 (ko) | 2016-08-03 | 2017-01-11 | 플라스마 처리 장치 및 시료의 이탈 방법 |
TW106102962A TWI660422B (zh) | 2016-08-03 | 2017-01-25 | 電漿處理裝置及樣品之脫離方法 |
US15/425,155 US10825700B2 (en) | 2016-08-03 | 2017-02-06 | Plasma processing apparatus and method for releasing sample |
US17/038,072 US20210013060A1 (en) | 2016-08-03 | 2020-09-30 | Plasma processing apparatus and method for releasing sample |
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Cited By (2)
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CN112885691A (zh) * | 2019-11-29 | 2021-06-01 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其稳定性优化的方法 |
KR20210097621A (ko) | 2020-01-29 | 2021-08-09 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 기판 처리 시스템 |
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JP7059064B2 (ja) * | 2018-03-26 | 2022-04-25 | 株式会社日立ハイテク | プラズマ処理装置 |
US20240047258A1 (en) * | 2021-02-25 | 2024-02-08 | Hitachi High-Tech Corporation | Plasma processing apparatus |
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JPH11233605A (ja) * | 1998-02-17 | 1999-08-27 | Mitsubishi Electric Corp | 静電チャックステージ |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112885691A (zh) * | 2019-11-29 | 2021-06-01 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其稳定性优化的方法 |
CN112885691B (zh) * | 2019-11-29 | 2024-05-14 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其稳定性优化的方法 |
KR20210097621A (ko) | 2020-01-29 | 2021-08-09 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 기판 처리 시스템 |
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KR20180015558A (ko) | 2018-02-13 |
US20180040491A1 (en) | 2018-02-08 |
TW201816883A (zh) | 2018-05-01 |
US20210013060A1 (en) | 2021-01-14 |
US10825700B2 (en) | 2020-11-03 |
TWI660422B (zh) | 2019-05-21 |
JP6708358B2 (ja) | 2020-06-10 |
KR101883246B1 (ko) | 2018-08-30 |
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