JP2017509153A - 太陽電池の受光面のパッシベーション - Google Patents
太陽電池の受光面のパッシベーション Download PDFInfo
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- 238000002161 passivation Methods 0.000 title description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 149
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 149
- 239000010703 silicon Substances 0.000 claims abstract description 149
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 238000000034 method Methods 0.000 claims abstract description 57
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 72
- 239000006117 anti-reflective coating Substances 0.000 claims description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 238000012876 topography Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 abstract description 12
- 238000000576 coating method Methods 0.000 abstract description 12
- 239000000463 material Substances 0.000 description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
Description
(項目1)
受光面を有するシリコン基板と、
上記シリコン基板の上記受光面の上方に配置された真性シリコン層と、
上記真性シリコン層上に配置されたN型シリコン層と、
上記N型シリコン層上に配置された非導電性反射防止コーティング(ARC)層と、
を備える、太陽電池。
(項目2)
上記シリコン基板は、単結晶シリコン基板であり、上記真性シリコン層は、真性アモルファスシリコン層であり、上記N型シリコン層は、N型アモルファスシリコン層である、項目1に記載の太陽電池。
(項目3)
上記シリコン基板の上記受光面上に配置されたトンネル誘電体層を更に備え、上記真性シリコン層は、上記トンネル誘電体層上に配置される、項目1に記載の太陽電池。
(項目4)
上記トンネル誘電体層は、二酸化シリコン(SiO 2 )の層である、項目3に記載の太陽電池。
(項目5)
上記シリコン基板は、単結晶シリコン基板であり、上記真性シリコン層は、真性アモルファスシリコン層であり、上記N型シリコン層は、N型アモルファスシリコン層である、項目4に記載の太陽電池。
(項目6)
上記二酸化シリコン(SiO 2 )の層は、約1〜10ナノメートルの範囲の厚さを有し、上記真性アモルファスシリコン層は、約1〜5ナノメートルの範囲の厚さを有する、項目5に記載の太陽電池。
(項目7)
上記非導電性反射防止コーティング(ARC)層は、窒化シリコンを含む、項目1に記載の太陽電池。
(項目8)
上記受光面は、テクスチャ化されたトポグラフィを有し、上記真性シリコン層は、上記受光面の上記テクスチャ化されたトポグラフィと共形である、項目1に記載の太陽電池。
(項目9)
上記基板は、上記受光面とは反対側の裏面を更に含み、上記太陽電池は、
上記基板の上記裏面、又は上記基板の上記裏面の上方の、複数の互い違いのN型半導体領域及びP型半導体領域と、
上記複数の互い違いのN型半導体領域及びP型半導体領域に結合された導電コンタクト構造体と、
を更に備える、項目1に記載の太陽電池。
(項目10)
受光面を有するシリコン基板と、
上記シリコン基板の上記受光面上に配置されたトンネル誘電体層と、
上記トンネル誘電体層上に配置されたN型シリコン層と、
上記N型シリコン層上に配置された非導電性反射防止コーティング(ARC)層と、
を備える、太陽電池。
(項目11)
上記シリコン基板は、単結晶シリコン基板であり、上記N型シリコン層は、N型アモルファスシリコン層である、項目10に記載の太陽電池。
(項目12)
上記トンネル誘電体層は、約1〜10ナノメートルの範囲の厚さを有する、二酸化シリコン(SiO 2 )の層である、項目10に記載の太陽電池。
(項目13)
上記非導電性反射防止コーティング(ARC)層は、窒化シリコンを含む、項目10に記載の太陽電池。
(項目14)
上記基板の上記受光面は、テクスチャ化されたトポグラフィを有し、上記N型シリコン層は、上記受光面の上記テクスチャ化されたトポグラフィと共形である、項目10に記載の太陽電池。
(項目15)
上記基板は、上記受光面とは反対側の裏面を更に含み、上記太陽電池は、
上記基板の上記裏面、又は上記基板の上記裏面の上方の、複数の互い違いのN型半導体領域及びP型半導体領域と、
上記複数の互い違いのN型半導体領域及びP型半導体領域に結合された導電コンタクト構造体と、
を更に備える、項目10に記載の太陽電池。
(項目16)
太陽電池を製造する方法であって、
シリコン基板の受光面上にトンネル誘電体層を形成する工程と、
摂氏約300度未満の温度で、上記トンネル誘電体層上にアモルファスシリコン層を形成する工程と、
を備える、方法。
(項目17)
上記トンネル誘電体層を形成する工程は、上記シリコン基板の上記受光面の一部分の化学的酸化、二酸化シリコン(SiO 2 )のプラズマ増強化学気相成長(PECVD)、上記シリコン基板の上記受光面の一部分の熱酸化、及び、O 2 又はO 3 環境中での、紫外線(UV)放射への上記シリコン基板の上記受光面の暴露からなる群から選択される技術を使用する工程を有する、項目16に記載の方法。
(項目18)
上記アモルファスシリコン層を形成する工程は、真性アモルファスシリコン層を形成する工程を有し、上記方法は、
摂氏約300度未満の温度で、上記アモルファスシリコン層上にN型アモルファスシリコン層を形成する工程と、
摂氏約300度未満の温度で、上記N型アモルファスシリコン層上に反射防止コーティング(ARC)層を形成する工程と、
を更に備える、項目16に記載の方法。
(項目19)
上記アモルファスシリコン層を形成する工程は、N型アモルファスシリコン層を形成する工程を有し、上記方法は、
摂氏約300度未満の温度で、上記N型アモルファスシリコン層上に反射防止コーティング(ARC)層を形成する工程を更に備える、項目16に記載の方法。
(項目20)
項目16に記載の方法に従って製造される、太陽電池。
Claims (20)
- 受光面を有するシリコン基板と、
前記シリコン基板の前記受光面の上方に配置された真性シリコン層と、
前記真性シリコン層上に配置されたN型シリコン層と、
前記N型シリコン層上に配置された非導電性反射防止コーティング(ARC)層と、
を備える、太陽電池。 - 前記シリコン基板は、単結晶シリコン基板であり、前記真性シリコン層は、真性アモルファスシリコン層であり、前記N型シリコン層は、N型アモルファスシリコン層である、請求項1に記載の太陽電池。
- 前記シリコン基板の前記受光面上に配置されたトンネル誘電体層を更に備え、前記真性シリコン層は、前記トンネル誘電体層上に配置される、請求項1に記載の太陽電池。
- 前記トンネル誘電体層は、二酸化シリコン(SiO2)の層である、請求項3に記載の太陽電池。
- 前記シリコン基板は、単結晶シリコン基板であり、前記真性シリコン層は、真性アモルファスシリコン層であり、前記N型シリコン層は、N型アモルファスシリコン層である、請求項4に記載の太陽電池。
- 前記二酸化シリコン(SiO2)の層は、約1〜10ナノメートルの範囲の厚さを有し、前記真性アモルファスシリコン層は、約1〜5ナノメートルの範囲の厚さを有する、請求項5に記載の太陽電池。
- 前記非導電性反射防止コーティング(ARC)層は、窒化シリコンを含む、請求項1に記載の太陽電池。
- 前記受光面は、テクスチャ化されたトポグラフィを有し、前記真性シリコン層は、前記受光面の前記テクスチャ化されたトポグラフィと共形である、請求項1に記載の太陽電池。
- 前記基板は、前記受光面とは反対側の裏面を更に含み、前記太陽電池は、
前記基板の前記裏面、又は前記基板の前記裏面の上方の、複数の互い違いのN型半導体領域及びP型半導体領域と、
前記複数の互い違いのN型半導体領域及びP型半導体領域に結合された導電コンタクト構造体と、
を更に備える、請求項1に記載の太陽電池。 - 受光面を有するシリコン基板と、
前記シリコン基板の前記受光面上に配置されたトンネル誘電体層と、
前記トンネル誘電体層上に配置されたN型シリコン層と、
前記N型シリコン層上に配置された非導電性反射防止コーティング(ARC)層と、
を備える、太陽電池。 - 前記シリコン基板は、単結晶シリコン基板であり、前記N型シリコン層は、N型アモルファスシリコン層である、請求項10に記載の太陽電池。
- 前記トンネル誘電体層は、約1〜10ナノメートルの範囲の厚さを有する、二酸化シリコン(SiO2)の層である、請求項10に記載の太陽電池。
- 前記非導電性反射防止コーティング(ARC)層は、窒化シリコンを含む、請求項10に記載の太陽電池。
- 前記基板の前記受光面は、テクスチャ化されたトポグラフィを有し、前記N型シリコン層は、前記受光面の前記テクスチャ化されたトポグラフィと共形である、請求項10に記載の太陽電池。
- 前記基板は、前記受光面とは反対側の裏面を更に含み、前記太陽電池は、
前記基板の前記裏面、又は前記基板の前記裏面の上方の、複数の互い違いのN型半導体領域及びP型半導体領域と、
前記複数の互い違いのN型半導体領域及びP型半導体領域に結合された導電コンタクト構造体と、
を更に備える、請求項10に記載の太陽電池。 - 太陽電池を製造する方法であって、
シリコン基板の受光面上にトンネル誘電体層を形成する工程と、
摂氏約300度未満の温度で、前記トンネル誘電体層上にアモルファスシリコン層を形成する工程と、
を備える、方法。 - 前記トンネル誘電体層を形成する工程は、前記シリコン基板の前記受光面の一部分の化学的酸化、二酸化シリコン(SiO2)のプラズマ増強化学気相成長(PECVD)、前記シリコン基板の前記受光面の一部分の熱酸化、及び、O2又はO3環境中での、紫外線(UV)放射への前記シリコン基板の前記受光面の暴露からなる群から選択される技術を使用する工程を有する、請求項16に記載の方法。
- 前記アモルファスシリコン層を形成する工程は、真性アモルファスシリコン層を形成する工程を有し、前記方法は、
摂氏約300度未満の温度で、前記アモルファスシリコン層上にN型アモルファスシリコン層を形成する工程と、
摂氏約300度未満の温度で、前記N型アモルファスシリコン層上に反射防止コーティング(ARC)層を形成する工程と、
を更に備える、請求項16に記載の方法。 - 前記アモルファスシリコン層を形成する工程は、N型アモルファスシリコン層を形成する工程を有し、前記方法は、
摂氏約300度未満の温度で、前記N型アモルファスシリコン層上に反射防止コーティング(ARC)層を形成する工程を更に備える、請求項16に記載の方法。 - 請求項16に記載の方法に従って製造される、太陽電池。
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TWI675490B (zh) | 2019-10-21 |
AU2019283886A1 (en) | 2020-01-23 |
US20150280018A1 (en) | 2015-10-01 |
KR20210043013A (ko) | 2021-04-20 |
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