JP2017183579A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP2017183579A JP2017183579A JP2016070517A JP2016070517A JP2017183579A JP 2017183579 A JP2017183579 A JP 2017183579A JP 2016070517 A JP2016070517 A JP 2016070517A JP 2016070517 A JP2016070517 A JP 2016070517A JP 2017183579 A JP2017183579 A JP 2017183579A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- unit
- processing
- liquid
- processing unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 391
- 238000012545 processing Methods 0.000 title claims abstract description 291
- 239000007788 liquid Substances 0.000 claims abstract description 123
- 230000032258 transport Effects 0.000 claims description 90
- 238000001035 drying Methods 0.000 claims description 41
- 239000012530 fluid Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 9
- 238000000352 supercritical drying Methods 0.000 description 52
- 238000012546 transfer Methods 0.000 description 29
- 230000007246 mechanism Effects 0.000 description 17
- 238000003860 storage Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 hydrofluoroether Chemical compound 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67715—Changing the direction of the conveying path
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
図1及び図2に示すように、基板処理装置1は、前端部に搬入出部2を形成し、搬入出部2の後方に搬送部3を形成し、搬送部3の後方に処理部4を形成する。また、基板処理装置1は、基板処理装置1の全体の制御を行なう制御部80を備えている。
上記実施例1に係る基板処理装置1では、1個ずつの基板載置部12、基板搬送部13、液処理部14、超臨界乾燥処理部15で基板処理ユニット11を構成しているが、これに限られず、図7に示す基板処理装置56のように、1個の基板載置部12に対して複数個(ここでは、2個)の基板搬送部13、液処理部14、超臨界乾燥処理部15で基板処理ユニット57を構成することもできる。なお、1個の基板載置部12に複数個の載置台21を設けて複数枚の基板7をストックできるようにしてもよい。
上記実施例1に係る基板処理装置1では、基板載置部12を基板搬送部13、液処理部14、超臨界乾燥処理部15と同様の高さに配置して基板処理ユニット11を構成しているが、これに限られず、図8に示す基板処理装置58(基板処理ユニット59)のように、超臨界乾燥処理部15の上方に基板載置部12を配置してもよい。なお、基板載置部12は、超臨界乾燥処理部15の下方に配置してもよく、また、液処理部14の上方又は下方に配置してもよい。
上記実施例1に係る基板処理装置1では、1個ずつの基板載置部12、基板搬送部13、液処理部14、超臨界乾燥処理部15で基板処理ユニット11を構成しているが、これに限られず、図9に示す基板処理装置60のように、1個の基板搬送部13及び液処理部14に対して複数個(ここでは、2個)の基板載置部12及び超臨界乾燥処理部15で基板処理ユニット61を構成することもできる。なお、ここでは、1個の基板搬送部13に対して1個の液処理部14と複数個の超臨界乾燥処理部15を設けた構成としているが、1個の基板搬送部13に対して1個の超臨界乾燥処理部15と複数個の液処理部14を設けた構成や、1個の基板搬送部13に対して複数個の液処理部14及び超臨界乾燥処理部15を設けた構成とすることもできる。
上記実施例1〜4に係る基板処理装置1,56,58,60では、搬入出部2と処理部4との間に搬送部3を設けた構成としているが、これに限られず、図10に示す基板処理装置62(実施例5)又は図11に示す基板処理装置63(実施例6)のように、搬送部3を無くし、処理部4の基板搬入出部10で基板7を搬入出部2から基板処理ユニット64,65に1枚ずつ直接搬送するように構成してもよい。
7 基板
10 基板搬入出部
12 基板載置部
13 基板搬送部
14 液処理部
15 超臨界乾燥処理部
25 乾燥基板用搬送部
26 湿潤基板用搬送部
Claims (6)
- 基板を処理液を用いて液処理する液処理部と、
前記液処理部で液処理した後の湿潤状態の前記基板を乾燥処理する乾燥処理部と、
前記液処理部へ処理前の前記基板を搬送する第1搬送部と、
前記液処理部から前記乾燥処理部へ湿潤状態の前記基板を搬送する第2搬送部と、
前記液処理部で液処理する前の前記基板を搬送するとともに、前記乾燥処理部から乾燥処理後の前記基板を搬送する第3搬送部とを有し、
前記第3搬送部と面する側に前記第1搬送部と前記第2搬送部と前記乾燥処理部が配置され、前記第1搬送部と前記第2搬送部に面し前記第3搬送部と反対側に前記液処理部が配置されることを特徴とする基板処理装置。 - 1個の前記第1搬送部及び前記第2搬送部に対して複数個の前記液処理部又は前記乾燥処理部を設けて、前記第1搬送部及び前記第2搬送部を複数個の前記液処理部又は前記乾燥処理部で共用することを特徴とする請求項1に記載の基板処理装置。
- 前記第3搬送部は、複数枚の前記基板を収容したキャリアとの間で前記基板の搬送を行うことを特徴とする請求項1又は請求項2に記載の基板処理装置。
- 前記第1搬送部と前記第2搬送部と前記第3搬送部に面する側に前記液処理部で液処理する前の乾燥状態の前記基板を載置する基板載置部が配置されることを特徴とする請求項1〜請求項3のいずれかに記載の基板処理装置。
- 前記乾燥処理部は、容器本体に対して蓋体及び基板載置台を内部に収容した処理位置と外部に退避した待機位置とに移動可能とし、前記乾燥処理部の蓋体及び基板載置台の待機位置に前記第2搬送部により前記基板を搬入し、前記乾燥処理部の蓋体及び基板載置台の待機位置から前記第3搬送部により前記基板を搬出することを特徴とする請求項1〜請求項4のいずれかに記載の基板処理装置。
- 前記乾燥処理部は、湿潤状態の前記基板を超臨界流体を用いて乾燥処理することを特徴とする請求項1〜請求項5のいずれかに記載の基板処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016070517A JP6559087B2 (ja) | 2016-03-31 | 2016-03-31 | 基板処理装置 |
US15/467,001 US10593571B2 (en) | 2016-03-31 | 2017-03-23 | Substrate processing apparatus |
KR1020170039954A KR102334274B1 (ko) | 2016-03-31 | 2017-03-29 | 기판 처리 장치 |
CN201710201871.3A CN107275259B (zh) | 2016-03-31 | 2017-03-30 | 基板处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016070517A JP6559087B2 (ja) | 2016-03-31 | 2016-03-31 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017183579A true JP2017183579A (ja) | 2017-10-05 |
JP6559087B2 JP6559087B2 (ja) | 2019-08-14 |
Family
ID=59959714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016070517A Active JP6559087B2 (ja) | 2016-03-31 | 2016-03-31 | 基板処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10593571B2 (ja) |
JP (1) | JP6559087B2 (ja) |
KR (1) | KR102334274B1 (ja) |
CN (1) | CN107275259B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020088015A (ja) * | 2018-11-16 | 2020-06-04 | 株式会社ディスコ | 加工システム |
WO2021112130A1 (ja) * | 2019-12-06 | 2021-06-10 | 株式会社レクザム | ウェハ処理装置 |
JP2021093389A (ja) * | 2019-12-06 | 2021-06-17 | 株式会社レクザム | ウェハ処理装置 |
JP2021125576A (ja) * | 2020-02-06 | 2021-08-30 | 株式会社レクザム | ウェハ処理装置 |
JP2021125667A (ja) * | 2020-02-10 | 2021-08-30 | 株式会社レクザム | ウェハ処理装置 |
JP2022016347A (ja) * | 2020-07-09 | 2022-01-21 | セメス カンパニー,リミテッド | 基板搬送装置、基板処理装置、及び基板処理方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI831656B (zh) * | 2018-01-04 | 2024-02-01 | 日商東京威力科創股份有限公司 | 基板處理裝置及基板處理方法 |
JP6899813B2 (ja) * | 2018-11-27 | 2021-07-07 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
KR20230033256A (ko) * | 2021-08-31 | 2023-03-08 | 삼성전자주식회사 | 기판 이송 유닛, 기판 처리 장치, 및 기판 처리 방법 |
CN114068365A (zh) * | 2021-11-04 | 2022-02-18 | 上海至临半导体技术有限公司 | 一种用于超临界清洗的湿法设备及其工作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003100691A (ja) * | 2001-09-26 | 2003-04-04 | Ebara Corp | 湿式処理方法及び装置 |
JP2013254904A (ja) * | 2012-06-08 | 2013-12-19 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19910478C2 (de) * | 1998-03-12 | 2002-02-28 | Tokyo Electron Ltd | Substrattransportverfahren und Substratbearbeitungssystem |
TW538472B (en) * | 2001-04-27 | 2003-06-21 | Kobe Steel Ltd | Method and system for processing substrate |
JP4044300B2 (ja) | 2001-04-27 | 2008-02-06 | 株式会社神戸製鋼所 | ウェハ等の処理設備および処理方法 |
US20060033678A1 (en) * | 2004-01-26 | 2006-02-16 | Applied Materials, Inc. | Integrated electroless deposition system |
JP4555143B2 (ja) * | 2004-05-11 | 2010-09-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
JP2008091364A (ja) * | 2006-09-29 | 2008-04-17 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP5490639B2 (ja) * | 2010-07-14 | 2014-05-14 | 大日本スクリーン製造株式会社 | 基板処理装置および基板搬送方法 |
TWI627667B (zh) * | 2012-11-26 | 2018-06-21 | 應用材料股份有限公司 | 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理 |
US20150155188A1 (en) * | 2013-11-29 | 2015-06-04 | Semes Co., Ltd. | Substrate treating apparatus and method |
JP6295107B2 (ja) * | 2014-03-07 | 2018-03-14 | 株式会社荏原製作所 | 基板処理システムおよび基板処理方法 |
KR20170009539A (ko) * | 2015-07-17 | 2017-01-25 | 세메스 주식회사 | 처리액 공급 유닛 및 기판 처리 장치 |
WO2017062134A1 (en) * | 2015-10-04 | 2017-04-13 | Applied Materials, Inc. | Small thermal mass pressurized chamber |
-
2016
- 2016-03-31 JP JP2016070517A patent/JP6559087B2/ja active Active
-
2017
- 2017-03-23 US US15/467,001 patent/US10593571B2/en active Active
- 2017-03-29 KR KR1020170039954A patent/KR102334274B1/ko active IP Right Grant
- 2017-03-30 CN CN201710201871.3A patent/CN107275259B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003100691A (ja) * | 2001-09-26 | 2003-04-04 | Ebara Corp | 湿式処理方法及び装置 |
JP2013254904A (ja) * | 2012-06-08 | 2013-12-19 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020088015A (ja) * | 2018-11-16 | 2020-06-04 | 株式会社ディスコ | 加工システム |
JP7278059B2 (ja) | 2018-11-16 | 2023-05-19 | 株式会社ディスコ | 加工システム |
WO2021112130A1 (ja) * | 2019-12-06 | 2021-06-10 | 株式会社レクザム | ウェハ処理装置 |
JP2021093389A (ja) * | 2019-12-06 | 2021-06-17 | 株式会社レクザム | ウェハ処理装置 |
JP7410547B2 (ja) | 2019-12-06 | 2024-01-10 | 株式会社レクザム | ウェハ処理装置 |
JP2021125576A (ja) * | 2020-02-06 | 2021-08-30 | 株式会社レクザム | ウェハ処理装置 |
JP2021125667A (ja) * | 2020-02-10 | 2021-08-30 | 株式会社レクザム | ウェハ処理装置 |
JP7427232B2 (ja) | 2020-02-10 | 2024-02-05 | 株式会社レクザム | ウェハ処理装置 |
JP2022016347A (ja) * | 2020-07-09 | 2022-01-21 | セメス カンパニー,リミテッド | 基板搬送装置、基板処理装置、及び基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107275259A (zh) | 2017-10-20 |
KR102334274B1 (ko) | 2021-12-01 |
US20170287742A1 (en) | 2017-10-05 |
CN107275259B (zh) | 2021-11-30 |
KR20170113354A (ko) | 2017-10-12 |
US10593571B2 (en) | 2020-03-17 |
JP6559087B2 (ja) | 2019-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6559087B2 (ja) | 基板処理装置 | |
KR101965455B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP6425639B2 (ja) | 基板処理システム | |
CN105742211B (zh) | 基板处理装置 | |
TW201126633A (en) | Substrate processing apparatus and method | |
JP2009081362A (ja) | 基板処理装置 | |
JP2006013107A (ja) | 基板処理装置 | |
JP6294761B2 (ja) | 熱処理装置及び成膜システム | |
JP2006179757A (ja) | 基板処理装置 | |
JP5724713B2 (ja) | 熱処理装置 | |
KR102444876B1 (ko) | 기판 처리 장치 | |
JP5485056B2 (ja) | イオン供給装置及びこれを備えた被処理体の処理システム | |
JPWO2017169155A1 (ja) | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 | |
JP2015035585A (ja) | 成膜システム | |
JP2005085896A (ja) | 処理システム及び処理方法 | |
JP2015035584A (ja) | 熱処理装置及び成膜システム | |
JP2015035583A (ja) | 熱処理装置及び成膜システム | |
JP6312615B2 (ja) | 基板処理装置及び基板処理方法 | |
JP4795064B2 (ja) | 基板処理装置及び基板処理方法並びに基板処理プログラム | |
JP2016066689A (ja) | 容器清掃装置及び容器清掃方法 | |
KR101718519B1 (ko) | 건식 및 습식 처리를 위한 단일 플랫폼의 기판처리설비 | |
JP2014067940A (ja) | 基板処理システム | |
WO2023127050A1 (ja) | 基板乾燥装置、基板処理装置および基板の製造方法 | |
TWI762668B (zh) | 基板搬送裝置及基板搬送方法 | |
JP2008109158A (ja) | 基板処理装置、基板処理方法、基板の製造方法及び電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180213 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181211 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190214 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190618 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190716 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6559087 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |