JP2017092129A - ウエーハの加工方法 - Google Patents

ウエーハの加工方法 Download PDF

Info

Publication number
JP2017092129A
JP2017092129A JP2015217354A JP2015217354A JP2017092129A JP 2017092129 A JP2017092129 A JP 2017092129A JP 2015217354 A JP2015217354 A JP 2015217354A JP 2015217354 A JP2015217354 A JP 2015217354A JP 2017092129 A JP2017092129 A JP 2017092129A
Authority
JP
Japan
Prior art keywords
wafer
division
modified layer
dividing
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015217354A
Other languages
English (en)
Japanese (ja)
Inventor
泰吉 湯平
Yasukichi Yuhira
泰吉 湯平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2015217354A priority Critical patent/JP2017092129A/ja
Priority to TW105132383A priority patent/TWI697946B/zh
Priority to KR1020160141851A priority patent/KR20170053114A/ko
Priority to CN201610943409.6A priority patent/CN107068616A/zh
Publication of JP2017092129A publication Critical patent/JP2017092129A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
JP2015217354A 2015-11-05 2015-11-05 ウエーハの加工方法 Pending JP2017092129A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015217354A JP2017092129A (ja) 2015-11-05 2015-11-05 ウエーハの加工方法
TW105132383A TWI697946B (zh) 2015-11-05 2016-10-06 晶圓的加工方法
KR1020160141851A KR20170053114A (ko) 2015-11-05 2016-10-28 웨이퍼의 가공 방법
CN201610943409.6A CN107068616A (zh) 2015-11-05 2016-11-01 晶片的加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015217354A JP2017092129A (ja) 2015-11-05 2015-11-05 ウエーハの加工方法

Publications (1)

Publication Number Publication Date
JP2017092129A true JP2017092129A (ja) 2017-05-25

Family

ID=58739855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015217354A Pending JP2017092129A (ja) 2015-11-05 2015-11-05 ウエーハの加工方法

Country Status (4)

Country Link
JP (1) JP2017092129A (zh)
KR (1) KR20170053114A (zh)
CN (1) CN107068616A (zh)
TW (1) TWI697946B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019016651A (ja) * 2017-07-04 2019-01-31 株式会社ディスコ ウェーハの加工方法
JP2019153731A (ja) * 2018-03-06 2019-09-12 株式会社ディスコ ウェーハの加工方法
JP2020141098A (ja) * 2019-03-01 2020-09-03 株式会社ディスコ デバイスチップの形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7118522B2 (ja) * 2017-09-19 2022-08-16 株式会社ディスコ ウェーハの加工方法
JP7007052B2 (ja) * 2017-09-19 2022-01-24 株式会社ディスコ ウェーハの加工方法
CN110732790A (zh) * 2019-10-28 2020-01-31 东莞记忆存储科技有限公司 一种封装基板切割的加工工艺方法
CN110625834A (zh) * 2019-11-01 2019-12-31 常州时创能源科技有限公司 晶硅边皮料的切割方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194515A (ja) * 2006-01-23 2007-08-02 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5597051B2 (ja) * 2010-07-21 2014-10-01 浜松ホトニクス株式会社 レーザ加工方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019016651A (ja) * 2017-07-04 2019-01-31 株式会社ディスコ ウェーハの加工方法
JP2019153731A (ja) * 2018-03-06 2019-09-12 株式会社ディスコ ウェーハの加工方法
JP7082502B2 (ja) 2018-03-06 2022-06-08 株式会社ディスコ ウェーハの加工方法
JP2020141098A (ja) * 2019-03-01 2020-09-03 株式会社ディスコ デバイスチップの形成方法

Also Published As

Publication number Publication date
TW201729269A (zh) 2017-08-16
CN107068616A (zh) 2017-08-18
KR20170053114A (ko) 2017-05-15
TWI697946B (zh) 2020-07-01

Similar Documents

Publication Publication Date Title
JP2017092129A (ja) ウエーハの加工方法
JP6504977B2 (ja) ウエーハの加工方法
JP6308919B2 (ja) ウエーハの加工方法
JP2016054205A (ja) ウエーハの加工方法
JP2016042516A (ja) ウエーハの加工方法
JP2016076520A (ja) ウエーハの加工方法
JP6576211B2 (ja) ウエーハの加工方法
JP6576212B2 (ja) ウエーハの加工方法
JP2017059686A (ja) ウエーハの加工方法
JP2016076523A (ja) ウエーハの加工方法
JP6525840B2 (ja) ウエーハの加工方法
JP2017059688A (ja) ウエーハ
KR102424648B1 (ko) 웨이퍼의 가공 방법
JP2016058429A (ja) ウエーハの加工方法
JP2016076522A (ja) ウエーハの加工方法
JP6532366B2 (ja) ウエーハの加工方法
JP6525833B2 (ja) ウエーハの加工方法
JP6529404B2 (ja) ウエーハの加工方法
JP2017059685A (ja) ウエーハの加工方法
JP2016058430A (ja) ウエーハの加工方法
JP2017069287A (ja) ウエーハの加工方法
JP2016072278A (ja) ウエーハの加工方法
JP2016054204A (ja) ウエーハの加工方法
JP2016058431A (ja) ウエーハの加工方法
JP2016054203A (ja) ウエーハの加工方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180928

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190528

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20191210