JP2016538729A - 基板を製造する方法、並びに基板、並びに基板を備えた金属酸化物半導体電界効果トランジスタ、並びに基板を備えた微小電気機械システム、並びに自動車 - Google Patents
基板を製造する方法、並びに基板、並びに基板を備えた金属酸化物半導体電界効果トランジスタ、並びに基板を備えた微小電気機械システム、並びに自動車 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 230000005669 field effect Effects 0.000 title claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 17
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 54
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000001312 dry etching Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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Abstract
Description
炭化ケイ素(シリコンカーバイド)層を含む基板は、標準的な構成部品のためにますます使用されるようになっている。例えば、1.2kVを越える電圧まで遮断するパワー半導体は、このような基板を使用してトレンチ金属酸化物半導体電界効果トランジスタ(トレンチMOSFET)として実現される。このようなパワー半導体は、例えば、電気自動車、即ち、バッテリ、例えばリチウムイオン電池を主体としたバッテリを備えた自動車、又は光起電力装置で使用される。微小電気機械システムもこのような基板により実現することができる。微小電気機械システム用にはこの基板にはさらに、二酸化ケイ素層、窒化ケイ素層、又はケイ素層を有することができ、これらの層の上に炭化ケイ素層が堆積されている。
本発明によれば、請求項1記載の、金属酸化物半導体電界効果トランジスタ又は微小電気機械システム用の基板を製造する方法が提供される。この場合、基板は炭化ケイ素層を含んでいる。この方法は、この方法が、(a)パターニングされた第1のマスク層を使用して前記基板に暫定的なトレンチをドライエッチングし、この際、前記パターニングされた第1のマスク層の残留部が残るように前記ドライエッチングを行うステップと、(b)前記暫定的なトレンチの少なくとも壁に第2のマスク層を被着するステップと、(c)前記第1のマスク層の前記残留部と前記第2のマスク層とを使用してドライエッチングして、これにより段部を内部に有するトレンチを形成するステップと、を有することを特徴としている。
本発明の様々な態様において使用される、段部を有したトレンチは様々な形式で製造することができる。
Claims (10)
- 金属酸化物半導体電界効果トランジスタ(100)又は微小電気機械システム用の、炭化ケイ素層(10)を含む基板を製造する方法であって、
(a)パターニングされた第1のマスク層(60)を使用して前記基板に暫定的なトレンチをドライエッチングし、この際、前記パターニングされた第1のマスク層(60)の残留部(60´)が残るように前記ドライエッチングを行うステップと、
(b)少なくとも、前記暫定的なトレンチの壁に、第2のマスク層(65)を被着するステップと、
(c)前記第1のマスク層の前記残留部(60´)と前記第2のマスク層(65)とを使用してドライエッチングして、これにより段部(80)を内部に有するトレンチ(90)を形成するステップと、を有することを特徴とする、方法。 - ステップ(b)は、
前記第2のマスク層(65)を共形被着し、この際に、前記第2のマスク層の一部(65´)を前記暫定的なトレンチの壁に被着し、前記第2のマスク層の別の部分を前記暫定的なトレンチの底面上に被着し、さらに別の部分を前記パターニングされた第1のマスク層の前記残留部(60´)上に被着するステップと、
前記別の部分と、前記さらに別の部分とをドライエッチングにより除去するステップと、を含む、請求項1記載の方法。 - 当該方法は、ステップ(a)の後かつステップ(b)の前に、前記暫定的なトレンチの底面にイオンを注入するステップを含む、請求項1又は2記載の方法。
- ステップ(a)は、
前記第1のマスク層(60)を共形被着するステップと、
パターニングされたフォトレジスト(70)を前記第1のマスク層(60)上に被着するステップと、
前記パターニングされたフォトレジスト(70)を使用してプラズマエッチングにより前記第1のマスク層(60)をパターニングするステップと、を含む、請求項1から3までのいずれか1項記載の方法。 - 前記炭化ケイ素層(10)は六方晶結晶構造を有していて、前記炭化ケイ素層(10)上には適度にp型ドープされた炭化ケイ素層(20)が配置されており、前記適度にp型ドープされた炭化ケイ素層(20)の少なくとも一部の上に、n型に高ドープされた炭化ケイ素層(30)が配置されており、ステップ(a)では、前記第1のマスク層(60)を前記n型に高ドープされた炭化ケイ素層(30)上に共形被着し、ステップ(a)でのエッチングにより、前記適度にp型ドープされた炭化ケイ素層(20)と前記n型に高ドープされた炭化ケイ素層(30)とに切欠も形成し、前記切欠は、前記暫定的なトレンチ上に配置されており、横断面は前記暫定的なトレンチの幅に相当する同じ幅を有している、請求項4記載の方法。
- 請求項1から5までのいずれか1項記載の方法により製造された基板。
- 請求項5記載の方法で製造された基板を有する金属酸化物半導体電界効果トランジスタ(100)であって、前記トレンチ(90)には前記段部(80)のところまで誘電体が充填されており、ゲート電極(50)は多結晶ケイ素を含み、少なくとも部分的に前記トレンチ(90)内の前記誘電体の上に配置され、かつ部分的に前記切欠内に、前記適度にp型ドープされた炭化ケイ素層(20)内に鉛直のチャネル領域(25)が生じるように配置されている、金属酸化物半導体電界効果トランジスタ(100)。
- 前記誘電体は、前記段部(80)の上側のトレンチ壁も覆っている、請求項7記載の金属酸化物半導体電界効果トランジスタ(100)。
- 請求項1から5までのいずれか1項記載の方法によって製造された基板を備えた微小電気機械システムであって、前記基板はさらに、その上に前記炭化ケイ素層が堆積される二酸化ケイ素層、窒化ケイ素層、又はケイ素層を含み、前記段部(80)の上側の前記トレンチ(90)の一部は完全に炭化ケイ素層内に形成されている、微小電気機械システム。
- 請求項7又は8記載の金属酸化物半導体電界効果トランジスタを含むパワースイッチを備えた自動車。
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DE102013217768.2 | 2013-09-05 | ||
DE102013217768.2A DE102013217768A1 (de) | 2013-09-05 | 2013-09-05 | Verfahren zur Herstellung eines Substrats, Substrat, Metall-Oxid-Halbleiter-Feldeffekttransistor mit einem Substrat, mikroelektromechanisches System mit einem Substrat, und Kraftfahrzeug |
PCT/EP2014/066951 WO2015032577A1 (de) | 2013-09-05 | 2014-08-07 | Verfahren zur herstellung eines substrats, substrat, metall-oxid-halbleiter-feldeffekttransistor mit einem substrat, mikroelektromechanisches system mit einem substrat, und kraftfahrzeug |
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US (1) | US10636901B2 (ja) |
EP (1) | EP3042391A1 (ja) |
JP (1) | JP2016538729A (ja) |
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DE102015113998A1 (de) * | 2015-08-24 | 2017-03-02 | Gottfried Wilhelm Leibniz Universität Hannover | Verfahren zur Herstellung eines Mikrozerspanwerkzeugs sowie Mikrozerspanwerkzeug |
CN108807177B (zh) * | 2017-05-05 | 2021-07-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
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- 2013-09-05 DE DE102013217768.2A patent/DE102013217768A1/de not_active Ceased
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- 2014-08-07 EP EP14747945.5A patent/EP3042391A1/de not_active Withdrawn
- 2014-08-07 WO PCT/EP2014/066951 patent/WO2015032577A1/de active Application Filing
- 2014-08-07 JP JP2016539451A patent/JP2016538729A/ja active Pending
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JP2005142243A (ja) * | 2003-11-05 | 2005-06-02 | Toyota Motor Corp | 絶縁ゲート型半導体装置およびその製造方法 |
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EP3042391A1 (de) | 2016-07-13 |
US20160218208A1 (en) | 2016-07-28 |
US10636901B2 (en) | 2020-04-28 |
DE102013217768A1 (de) | 2015-03-05 |
WO2015032577A1 (de) | 2015-03-12 |
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