JP2016523792A - ガラス基板洗浄方法 - Google Patents
ガラス基板洗浄方法 Download PDFInfo
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- JP2016523792A JP2016523792A JP2016511790A JP2016511790A JP2016523792A JP 2016523792 A JP2016523792 A JP 2016523792A JP 2016511790 A JP2016511790 A JP 2016511790A JP 2016511790 A JP2016511790 A JP 2016511790A JP 2016523792 A JP2016523792 A JP 2016523792A
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- glass substrate
- glass
- alkaline solution
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/04—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto specially adapted for plate glass, e.g. prior to manufacture of windshields
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Liquid Crystal (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
200 可動液体噴射装置
202 ガラス基板
204 洗浄液
207,214,218,222,226,230,234,238,242 ノズル
208 ノズルバー
210 軸
212,220 アルカリ性溶液
216,224,232,240 リンス液
228,236 酸性溶液
244 ガスナイフ装置
246 ガス流
247 ESDイオナイザ
248 搬送装置
250 ローラー
252 接触面
Claims (10)
- ガラス基板の表面から汚染物を除去する方法において、
前記ガラス基板を、搬送装置により、搬送方向に沿って搬送する工程、
を含み、
前記搬送する工程中に、前記ガラス基板の少なくとも一方の表面が、順次に、
a)オゾン水を含む液体噴射に前記ガラス基板の前記少なくとも一方の表面をさらす工程、
b)第1のアルカリ性溶液の液体噴射に前記ガラス基板の前記少なくとも一方の表面をさらす工程、
c)第2のアルカリ性溶液の液体噴射に前記ガラス基板の前記少なくとも一方の表面をさらす工程、
d)前記ガラス基板の前記少なくとも一方の表面から金属イオンを除去するため、第1の酸性溶液の液体噴射に前記ガラス基板の前記少なくとも一方の表面をさらす工程、前記第1の酸性溶液はHClを含む、及び
e)前記ガラス基板の前記少なくとも一方の表面を乾燥させる工程、
を含む、表面処理にかけられる、
ことを特徴とする方法。 - 前記ガラス基板を、前記工程c)後に、第2の酸性溶液の液体噴射にさらす工程をさらに含むことを特徴とする請求項1に記載の方法。
- 前記第2の酸性溶液がHFを含むことを特徴とする請求項2に記載の方法。
- 前記第2の酸性溶液が、約0.2Mから約2Mの範囲にあるモル濃度を有する、重フッ化アンモニウム溶液を含むことを特徴とする請求項2に記載の方法。
- 前記工程e)後の前記ガラス基板の平均表面粗さRaが約0.2nm以上で約0.8nmまでの範囲にあることを特徴とする請求項1から4のいずれかに記載の方法。
- 前記第1のアルカリ性溶液が、体積で約1:1:5から約1:2:80の範囲にある混合比を有する、NH4OH:H2O2:H2Oを含むことを特徴とする請求項1から5のいずれかに記載の方法。
- 前記第1のアルカリ性溶液が約40℃から約80℃の範囲の温度にあり、前記ガラス基板が前記第1のアルカリ性溶液に約1分から約30分の範囲の時間さらされることを特徴とする請求項1から6のいずれかに記載の方法。
- 前記第1のアルカリ性溶液のpHが約10より高いことを特徴とする請求項1から7のいずれかに記載の方法。
- 前記ガラス基板が、前記工程e)後に、前記少なくとも一方の表面の5nm以内に1.6×1012原子/cm2より少ないNa,K,Fe,Cu及びZnを含むことを特徴とする請求項1から8のいずれかに記載の方法。
- 前記ガラス基板の前記少なくとも一方の表面が前記工程e)後に有する、実効直径が0.3μmより大きい、粒子が0.02粒子/cm2より少ないことを特徴とする請求項1から9のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361817532P | 2013-04-30 | 2013-04-30 | |
US61/817,532 | 2013-04-30 | ||
PCT/US2014/035771 WO2014179251A1 (en) | 2013-04-30 | 2014-04-29 | Method of cleaning glass substrates |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016523792A true JP2016523792A (ja) | 2016-08-12 |
JP2016523792A5 JP2016523792A5 (ja) | 2017-06-15 |
JP6236145B2 JP6236145B2 (ja) | 2017-11-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016511790A Expired - Fee Related JP6236145B2 (ja) | 2013-04-30 | 2014-04-29 | ガラス基板洗浄方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9561982B2 (ja) |
JP (1) | JP6236145B2 (ja) |
KR (1) | KR20160002911A (ja) |
CN (1) | CN105340057B (ja) |
TW (1) | TWI603790B (ja) |
WO (1) | WO2014179251A1 (ja) |
Cited By (2)
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KR20200054688A (ko) * | 2018-11-12 | 2020-05-20 | (주)합동하이텍그라스 | 폐태양전지 유리기판 세정용 세정액 조성물 및 이를 이용한 폐태양전지 유리기판 세정 방법 |
JP2021514928A (ja) * | 2018-03-07 | 2021-06-17 | コーニング インコーポレイテッド | 静電帯電の低減のための起伏加工済みガラス表面 |
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JP6236145B2 (ja) | 2017-11-22 |
US20140318578A1 (en) | 2014-10-30 |
TWI603790B (zh) | 2017-11-01 |
US9561982B2 (en) | 2017-02-07 |
CN105340057B (zh) | 2018-01-16 |
KR20160002911A (ko) | 2016-01-08 |
CN105340057A (zh) | 2016-02-17 |
WO2014179251A1 (en) | 2014-11-06 |
TW201501821A (zh) | 2015-01-16 |
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