JP2016507745A - 原子層蒸着を使用して形成される統合計算要素を有する流体解析システム - Google Patents
原子層蒸着を使用して形成される統合計算要素を有する流体解析システム Download PDFInfo
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Abstract
Description
特定のシステム構成要素を参照するために、以下の説明および特許請求の範囲の全体を通して、特定の用語が使用される。本文書は、名称は異なるが機能は同じ構成要素を区別することは意図しない。「含む(including)」および「備える(comprising)」という用語は、オープンエンド様式で使用され、したがって、「〜を含むが、〜に限定されない(including,but not limited to ...)」ことを意味するものと解釈されるべきである。
SLT(λ)=S(λ)・(1/2+L(λ)) (1.1)
SLR(λ)=S(λ)・(1/2−L(λ)) (1.2)
である。
SLT(λ)−SLR(λ)=2・S(λ)・L(λ) (2)
式中、βは、比例定数であり、γは、較正オフセットである。βおよびγの値は、試料104ではなく、流体解析システム100の設計パラメータに依存する。したがって、パラメータβおよびγは、流体解析システム100の現場適用とは無関係に測定され得る。少なくともいくつかの実施形態において、ICE102は、具体的には、上の式(2)および(3)を満たすL(λ)を提供するように設計される。透過光と反射光との間の差スペクトルを測定することによって、試料104中の選択された成分の濃度の値が取得され得る。検出器112Aおよび112Bは、スペクトル密度の統合値を提供する、単一領域光検出器でもよい。すなわち、検出器112Aおよび112Bからの信号がそれぞれd1およびd2である場合、式(3)は、次式のように、新しい較正係数β’に対して再調整され得る。
κ=β・(d1−d2)+γ (4)
Sin(λ)=SLT(λ)+SLR(λ)(7)
Claims (22)
- 流体解析システムであって、
光源と、
統合計算要素(ICE)と、
光学信号を電気信号に変換する検出器と、を備え、
前記ICEは、複数の光学層を備え、前記複数の光学層のうちの少なくとも1つは、物質の化学的または物理的特性の予測を可能にするために、原子層蒸着(ALD)を使用して形成される、流体解析システム。 - 前記ICEは、ALDに基づく複数の異なるタイプの光学層を備え、前記複数の異なるタイプの光学層は、異なる屈折率を有する、請求項1に記載の流体解析システム。
- 前記ICEは、反応性磁気スパッタリング(RMS)を使用して形成される少なくとも1つの光学層を備える、請求項1に記載の流体解析システム。
- 前記ICEは、ALDを使用して形成または改良される少なくとも1つの非平面光学層を備える、請求項1に記載の流体解析システム。
- 流体試料インターフェースをさらに備え、前記流体試料インターフェースは、ALDを使用して形成または改良される少なくとも1つの層を備える、請求項1のいずれかに記載の流体解析システム。
- 前記流体試料インターフェースは、ALDを使用して形成されるダイヤモンド層を備える、請求項5に記載の流体解析システム。
- 前記検出器または前記光源は、ALDを使用して形成または改良される少なくとも1つの層を備える、請求項1〜6のうちのいずれか1項に記載の流体解析システム。
- 帯域通過フィルタ要素をさらに備え、前記帯域通過フィルタ要素は、ALDを使用して形成または改良される少なくとも1つの層を備える、請求項1〜6のうちのいずれか1項に記載の流体解析システム。
- 前記ICEに対する入力側レンズをさらに備え、前記入力側レンズは、ALDを使用して形成または改良される少なくとも1つの層を備える、請求項1〜6のうちのいずれか1項に記載の流体解析システム。
- 前記ICEに対する出力側レンズをさらに備え、前記出力側レンズは、ALDを使用して形成または改良される少なくとも1つの層を備える、請求項1〜6のうちのいずれか1項に記載の流体解析システム。
- 流体解析システムを製作するための方法であって、
複数の光学層を有する統合計算要素(ICE)設計を選択することと、
物質の化学的または物理的特性の予測を可能にするために、原子層蒸着(ALD)を使用して前記ICEの前記複数の光学層のうちの少なくとも1つを形成することと、を含む、方法。 - ALDを使用して光源または検出器の少なくとも一部を形成または改良することをさらに含む、請求項11に記載の方法。
- ALDを使用して流体試料インターフェースの少なくとも一部を形成または改良し、前記流体試料インターフェースを前記ICEの入力側に配設することをさらに含む、請求項11に記載の方法。
- ALDを使用して帯域通過フィルタ要素の少なくとも一部を形成または改良し、前記帯域通過フィルタ要素を前記ICEの入力側に配設することをさらに含む、請求項11に記載の方法。
- ALDを使用してレンズの少なくとも一部を形成または改良し、前記レンズを前記ICEの入力側または出力側に配設することをさらに含む、請求項11〜14のいずれかに記載の方法。
- ALDを使用して、前記ICEの少なくとも1つの非平面光学層を形成または改良することをさらに含む、請求項11〜14のいずれかに記載の方法。
- ALDを使用して、前記ICEの複数の異なるタイプの光学層を形成することをさらに含む、請求項11〜14のいずれかに記載の方法。
- 検層ストリングであって、
検層ツールセクションと、
前記検層ツールセクションと関連付けられる流体解析ツールであって、物質の化学的または物理的特性の予測を可能にするために、原子層蒸着(ALD)を使用して形成される少なくとも1つの光学層を有する、統合計算要素(ICE)を備える、流体解析ツールと、を備える、検層ストリング。 - 前記流体解析ユニットは、ALDを使用して形成または改良される検出器、帯域通過フィルタのうちの少なくとも1つを備える、請求項18に記載の検層ストリング。
- 流体解析のための方法であって、
流体試料を通して所定のスペクトルを有する光を方向付けることと、
複数の光学層を通して、前記流体試料から出力される光をフィルタリングすることであって、前記複数の光学層のうちの少なくとも1つは、前記流体試料の化学的または物理的特性に依存して前記光をフィルタリングするために、原子層蒸着(ALD)を使用して形成される、前記フィルタリングすることと、
前記複数の光学層から出力されるフィルタリングした光を検出することと、
前記フィルタリングした光のスペクトル特徴を前記流体試料の前記化学的または物理的特性に相関させることと、を含む、方法。 - 前記フィルタリングの前に、ALDを使用して形成または改良される少なくとも1つの光学経路構成要素を通して光を方向付けることをさらに含む、請求項20に記載の方法。
- 前記フィルタリングの後に、かつ前記検出の前に、ALDを使用して形成または改良される少なくとも1つの光学経路構成要素を通して光を方向付けることをさらに含む、請求項20に記載の方法。
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CA2962393C (en) | 2014-11-10 | 2019-03-26 | Halliburton Energy Services, Inc. | Systems and methods for real-time measurement of gas content in drilling fluids |
WO2017019072A1 (en) * | 2015-07-29 | 2017-02-02 | Halliburton Energy Services, Inc. | Reconstructing optical spectra using integrated computational element structures |
EP3300508A4 (en) * | 2015-09-03 | 2019-01-16 | Halliburton Energy Services, Inc. | TRAINING FLUID ANALYSIS TOOL COMPRISING AN INTEGRATED COMPUTING ELEMENT AND AN OPTICAL FILTER |
CN108351299A (zh) * | 2015-12-29 | 2018-07-31 | 哈里伯顿能源服务公司 | 用于对管道的监控传输进行测量的光学计算装置 |
US20190025122A1 (en) * | 2016-04-14 | 2019-01-24 | Halliburton Energy Services, Inc. | Fabry-Perot Based Optical Computing |
WO2021137871A1 (en) * | 2020-01-03 | 2021-07-08 | Halliburton Energy Services, Inc. | Ald-thin layer coating applications for sensing telemetry through evanescent wave interactions |
CN112526663A (zh) * | 2020-11-04 | 2021-03-19 | 浙江大学 | 一种基于原子层沉积的吸收膜及其制作方法 |
US20220228265A1 (en) * | 2021-01-15 | 2022-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for dynamically adjusting thin-film deposition parameters |
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Also Published As
Publication number | Publication date |
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EP2939055A4 (en) | 2016-10-26 |
AU2013377941B2 (en) | 2017-04-13 |
BR112015016721A2 (pt) | 2017-07-11 |
AU2013377941A1 (en) | 2015-07-23 |
CA2897779A1 (en) | 2014-08-14 |
US20150369043A1 (en) | 2015-12-24 |
MX2015009318A (es) | 2015-09-29 |
RU2618743C2 (ru) | 2017-05-11 |
EP2939055A1 (en) | 2015-11-04 |
CN104981721A (zh) | 2015-10-14 |
MX363597B (es) | 2019-03-28 |
RU2015129794A (ru) | 2017-03-16 |
WO2014123544A1 (en) | 2014-08-14 |
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