JP2016178145A - 固体撮像素子及びその製造方法 - Google Patents
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- 238000003384 imaging method Methods 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000012535 impurity Substances 0.000 claims abstract description 330
- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 150000002500 ions Chemical class 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 230000007423 decrease Effects 0.000 claims description 5
- 238000005036 potential barrier Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 65
- 229910052710 silicon Inorganic materials 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 13
- 238000005468 ion implantation Methods 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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Abstract
Description
図1(A)は、本発明の一態様に係る固体撮像素子を示す平面図であり、図1(B)は、図1(A)に示すA−A'線の断面図であり、図1(C)は、図1(A)に示すB−B'線の断面図である。図2〜図4は、図1(B)に示す固体撮像素子の製造方法を説明するための断面図である。この固体撮像素子は低電圧で駆動される素子である。
図2(A)に示すように、N型シリコン基板11を用意する。N型シリコン基板11の不純物濃度は例えば1×1014atoms/cm3台である。次いで、このN型シリコン基板11に図示せぬ素子分離領域(例えばLOCOS)を形成する。N型シリコン基板11の表面にイオン注入時の透過膜としての熱酸化膜(図示せず)を形成する。
図6〜図8は、本発明の一態様に係る固体撮像素子の製造方法を説明するための断面図であり、図1〜図4と同一部分には同一符号を付す。この固体撮像素子は図1に示す固体撮像素子と同一の構造を有している。
図6(A),(B)に示す工程は、実施の形態1の図2(A),(B)に示す工程と同一であるので説明を書略する。
図9(A)は、本発明の一態様に係る固体撮像素子を示す平面図であり、図9(B)は、図9(A)に示すA−A'線の断面図であり、図9(C)は、図9(A)に示すB−B'線の断面図である。図9において図1と同一部分には同一符号を付し、異なる部分についてのみ説明する。
図10(A)は、本発明の一態様に係る固体撮像素子を示す平面図であり、図10(B)は、図10(A)に示すA−A'線の断面図であり、図10(C)は、図10(A)に示すB−B'線の断面図である。図10において図1と同一部分には同一符号を付し、異なる部分についてのみ説明する。
図11(A)は、本発明の一態様に係る固体撮像素子を示す平面図であり、図11(B)は、図11(A)に示すA−A'線の断面図であり、図11(C)は、図11(A)に示すB−B'線の断面図である。図11において図1と同一部分には同一符号を付し、異なる部分についてのみ説明する。
また上(または下)との表現による構成は、必ずしも一方向に限定されるものではなく、例えばAの上(または下)にBを形成する(Bが形成される)というとき、半導体装置が天地逆転して使用される際には、Aの下(または上)にBを形成する(Bが形成される)という場合を含む。
Claims (9)
- 第1導電型の半導体層と、
前記半導体層上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置するゲート電極と、
前記ゲート電極の第1の端部より外側の前記半導体層に位置する第1導電型の第1の不純物領域と、
少なくとも前記ゲート電極の前記第1の端部より内側の前記半導体層に位置し、かつ前記第1の不純物領域に接する第1導電型の第2の不純物領域と、
前記第1の不純物領域及び前記第2の不純物領域の下方の前記半導体層に位置する第2導電型の第3の不純物領域と、
前記第1の不純物領域及び前記第3の不純物領域の下方の前記半導体層に位置し、かつ前記ゲート絶縁膜及び前記第2の不純物領域それぞれと接するとともに平面視において前記第3の不純物領域の周囲に位置する第2導電型の第5の不純物領域と、
前記ゲート電極の第2の端部の下方の前記半導体層に位置する第2導電型の第4の不純物領域と、を含み、
前記ゲート電極の前記第1の端部より外側から前記ゲート電極の前記第2の端部の下方に向かって、前記第1の不純物領域、前記第2の不純物領域、前記第5の不純物領域、前記半導体層の順に位置し、かつ前記第1の不純物領域、前記第2の不純物領域、前記半導体層の順に不純物濃度が低くなり、前記第5の不純物領域は前記第3の不純物領域より不純物濃度が低いことを特徴とする固体撮像素子。 - 請求項1において、
前記第2の不純物領域が前記第1の不純物領域の下に位置することを特徴とする固体撮像素子。 - 請求項1において、
前記第2の不純物領域は前記ゲート電極の前記第1の端部の外側に位置しないことを特徴とする固体撮像素子。 - 請求項1乃至3のいずれか一項において、
前記第3の不純物領域は前記第5の不純物領域と平面視において重なることを特徴とする固体撮像素子。 - 請求項1乃至4のいずれか一項において、
前記第5の不純物領域は前記第1の不純物領域及び前記第3の不純物領域それぞれと接することを特徴とする固体撮像素子。 - 請求項1乃至5のいずれか一項において、
前記半導体層が第1導電型のウェルであり、
前記第1導電型のウェルが半導体基板に位置することを特徴とする固体撮像素子。 - 請求項1乃至6のいずれか一項において、
前記半導体層が第1導電型の半導体基板であることを特徴とする固体撮像素子。 - 第1導電型の半導体層上にフォトレジストを形成し、前記フォトレジストをマスクとして第2導電型の不純物イオンを第1の方向に注入することで、前記半導体層に第2導電型の第5の不純物領域を形成する工程と、
前記フォトレジストをマスクとして第1導電型の不純物イオンを第2の方向に注入することで、前記半導体層の表面側に前記第5の不純物領域と接する第1導電型の第2の不純物領域を形成する工程と、
前記フォトレジストを除去する工程と、
前記第2の不純物領域の下方で、かつ前記第5の不純物領域の表面側に第2導電型の第3の不純物領域を形成する工程と、
前記半導体層上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
前記ゲート電極をマスクとし、前記ゲート電極の第1の端部を第1のマスク端部として第1導電型の不純物イオンを注入することで、前記ゲート電極の前記第1の端部より外側の前記半導体層に第1導電型の第1の不純物領域を形成する工程と、
前記ゲート電極をマスクとし、前記ゲート電極の第2の端部を第2のマスク端部として第2導電型の不純物イオンを注入することで、前記ゲート電極の前記第2の端部の下方の前記半導体層に第2導電型の第4の不純物領域を形成する工程と、を含み、
前記第2の不純物領域は、前記第1の不純物領域に接し、かつ少なくとも前記ゲート電極の前記第1の端部より内側の前記半導体層に形成され、
前記ゲート電極の前記第1の端部より外側から前記ゲート電極の前記第2の端部の下方に向かって、前記第1の不純物領域、前記第2の不純物領域、前記第5の不純物領域、前記半導体層の順に位置し、
前記第5の不純物領域は、前記第1の不純物領域及び前記第3の不純物領域の下方に位置し、かつ平面視において前記第3の不純物領域を囲み、
前記第1の不純物領域、前記第2の不純物領域、前記半導体層の順に不純物濃度が低くなり、前記第5の不純物領域は前記第3の不純物領域より不純物濃度が低く、
前記第1の方向は、前記半導体層の表面に対する垂直方向より傾斜した方向であり、
前記第2の方向は、前記第1の方向よりも前記垂直方向に近づけた方向であることを特徴とする固体撮像素子の製造方法。 - 第1導電型の半導体層に第2導電型の第5の不純物領域を形成する工程と、
前記半導体層に前記第5の不純物領域より浅い位置に第2導電型の第3の不純物領域を形成する工程と、
前記半導体層上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
前記ゲート電極をマスクとし、前記ゲート電極の第1の端部を第1のマスク端部として第1導電型の不純物イオンを第1の方向に注入することで、前記半導体層に第1導電型の第2の不純物領域を形成する工程と、
前記ゲート電極をマスクとし、前記ゲート電極の前記第1の端部を前記第1のマスク端部として第1導電型の不純物イオンを第2の方向に注入することで、前記ゲート電極の前記第1の端部より外側の前記半導体層に第1導電型の第1の不純物領域を形成する工程と、
前記ゲート電極をマスクとし、前記ゲート電極の第2の端部を第2のマスク端部として第2導電型の不純物イオンを注入することで、前記ゲート電極の前記第2の端部の下方の前記半導体層に第2導電型の第4の不純物領域を形成する工程と、を含み、
前記第2の不純物領域は、前記第1の不純物領域に接し、かつ少なくとも前記ゲート電極の前記第1の端部より内側の前記半導体層に形成され、
前記ゲート電極の前記第1の端部より外側から前記ゲート電極の前記第2の端部の下方に向かって、前記第1の不純物領域、前記第2の不純物領域、前記第5の不純物領域、前記半導体層の順に位置し、
前記第5の不純物領域は、前記第1の不純物領域及び前記第3の不純物領域の下方に位置し、かつ平面視において前記第3の不純物領域を囲み、
前記第1の不純物領域、前記第2の不純物領域、前記半導体層の順に不純物濃度が低くなり、前記第5の不純物領域は前記第3の不純物領域より不純物濃度が低く、
前記第1の方向は、前記半導体層の表面に対する垂直方向より傾斜した方向であり、
前記第2の方向は、前記第1の方向よりも前記垂直方向に近づけた方向であることを特徴とする固体撮像素子の製造方法。
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