JP2016167574A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2016167574A JP2016167574A JP2015177614A JP2015177614A JP2016167574A JP 2016167574 A JP2016167574 A JP 2016167574A JP 2015177614 A JP2015177614 A JP 2015177614A JP 2015177614 A JP2015177614 A JP 2015177614A JP 2016167574 A JP2016167574 A JP 2016167574A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 238000000034 method Methods 0.000 claims description 62
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 24
- 239000010931 gold Substances 0.000 claims description 16
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 145
- 239000000463 material Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 238000000059 patterning Methods 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Dicing (AREA)
- Drying Of Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
図3(c)に表すように、プラズマダイシングによって、半導体基板20が個々のチップ部20cに分割される。半導体基板20は、隙間20gを隔てて分割されている。隙間20gは、半導体基板20の下面20dの側から上面20uの側にまで貫通している。これにより、上部電極層10と、下部電極層11と、チップ部20cと、を備えた半導体装置が得られる。
図5(a)〜図8(b)は、本実施形態に係る下部電極層のパターニングを表す模式的断面図である。
Claims (15)
- 第1面と第2面とを有する半導体基板の前記第1面に複数の電極層を選択的に形成する工程と、
前記複数の電極層をマスクとして、前記複数の電極層間で露出された前記半導体基板の前記第1面をドライエッチングし、前記半導体基板の前記第1面から前記第2面まで貫通する隙間を形成することによって前記半導体基板を分割する工程と、
を備えた半導体装置の製造方法。 - 前記複数の電極層は、金(Au)、白金(Pt)、およびパラジウム(Pd)のいずれかを含む請求項1記載の半導体装置の製造方法。
- 前記複数の電極層の表面において、金(Au)、白金(Pt)、およびパラジウム(Pd)のいずれかを含む層が露出している請求項1記載の半導体装置の製造方法。
- 前記複数の電極層のいずれかは、複数の層を含み、最上層が金(Au)、白金(Pt)、およびパラジウム(Pd)のいずれかを含む請求項1記載の半導体装置の製造方法。
- フッ素を含むガスを用いて、前記半導体基板をドライエッチングする請求項1〜4のいずれか1つに記載の半導体装置の製造方法。
- 前記半導体基板にバイアスが印加されて、前記半導体基板がドライエッチングされる請求項1〜5のいずれか1つに記載の半導体装置の製造方法。
- リフトオフ法を用いて、前記半導体基板の前記第1面に選択的に前記複数の電極層を形成する請求項1〜6のいずれか1つに記載の半導体装置の製造方法。
- レーザグルービング法を用いて、前記半導体基板の前記第1面に選択的に前記複数の電極層を形成する請求項1〜6のいずれか1つに記載の半導体装置の製造方法。
- ブレードダイシング法を用いて、前記半導体基板の前記第1面に選択的に前記複数の電極層を形成する請求項1〜6のいずれか1つに記載の半導体装置の製造方法。
- ウェットエッチング法を用いて、前記半導体基板の前記第1面に選択的に前記複数の電極層を形成する請求項1〜6のいずれか1つに記載の半導体装置の製造方法。
- 前記複数の電極層のいずれかは、半導体装置の下部電極層である請求項1〜10のいずれか1つに記載の半導体装置の製造方法。
- 前記下部電極を形成する前に、前記半導体基板の前記第2面に前記半導体装置の上部電極層を形成する請求項11記載の半導体装置の製造方法。
- 前記上部電極層の面積は、前記下部電極層の面積よりも小さい請求項12記載の半導体装置の製造方法。
- 前記下部電極を形成する前に、前記半導体基板の前記第2面に半導体素子を形成する請求項11記載の半導体装置の製造方法。
- 前記複数の電極層の隣接する電極層間の距離は、10μm以下である請求項1〜14のいずれか1つに記載の半導体装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562131090P | 2015-03-10 | 2015-03-10 | |
US62/131,090 | 2015-03-10 |
Publications (1)
Publication Number | Publication Date |
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JP2016167574A true JP2016167574A (ja) | 2016-09-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015177614A Pending JP2016167574A (ja) | 2015-03-10 | 2015-09-09 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US20160268165A1 (ja) |
JP (1) | JP2016167574A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018182026A (ja) * | 2017-04-11 | 2018-11-15 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP2018190857A (ja) * | 2017-05-09 | 2018-11-29 | 株式会社ディスコ | ウェーハの加工方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI748856B (zh) * | 2021-01-29 | 2021-12-01 | 錼創顯示科技股份有限公司 | 微型發光二極體及顯示面板 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62124742A (ja) * | 1985-11-26 | 1987-06-06 | Fuji Photo Film Co Ltd | デバイスの製造方法 |
JP2004055684A (ja) * | 2002-07-17 | 2004-02-19 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2006237056A (ja) * | 2005-02-22 | 2006-09-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US20080025361A1 (en) * | 2006-07-19 | 2008-01-31 | Jerman John H | Linear diode-laser array with series-connected emitters |
JP2010245347A (ja) * | 2009-04-07 | 2010-10-28 | Panasonic Electric Works Co Ltd | 機能性デバイスの製造方法 |
JP4662717B2 (ja) * | 2002-04-09 | 2011-03-30 | エルジー エレクトロニクス インコーポレイティド | 基板をエッチングする方法 |
US20130328195A1 (en) * | 2012-06-11 | 2013-12-12 | Infineon Technologies Ag | Utilization of a metallization scheme as an etching mask |
-
2015
- 2015-09-02 US US14/843,917 patent/US20160268165A1/en not_active Abandoned
- 2015-09-09 JP JP2015177614A patent/JP2016167574A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62124742A (ja) * | 1985-11-26 | 1987-06-06 | Fuji Photo Film Co Ltd | デバイスの製造方法 |
JP4662717B2 (ja) * | 2002-04-09 | 2011-03-30 | エルジー エレクトロニクス インコーポレイティド | 基板をエッチングする方法 |
JP2004055684A (ja) * | 2002-07-17 | 2004-02-19 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2006237056A (ja) * | 2005-02-22 | 2006-09-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US20080025361A1 (en) * | 2006-07-19 | 2008-01-31 | Jerman John H | Linear diode-laser array with series-connected emitters |
JP2010245347A (ja) * | 2009-04-07 | 2010-10-28 | Panasonic Electric Works Co Ltd | 機能性デバイスの製造方法 |
US20130328195A1 (en) * | 2012-06-11 | 2013-12-12 | Infineon Technologies Ag | Utilization of a metallization scheme as an etching mask |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018182026A (ja) * | 2017-04-11 | 2018-11-15 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP2018190857A (ja) * | 2017-05-09 | 2018-11-29 | 株式会社ディスコ | ウェーハの加工方法 |
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US20160268165A1 (en) | 2016-09-15 |
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