JP2016157819A - 半導体装置及び半導体モジュール - Google Patents
半導体装置及び半導体モジュール Download PDFInfo
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Abstract
【解決手段】実施形態の半導体装置は、局所的に圧力又は温度に対する耐性の低い脆弱部を有する枠体と、枠体の内側に配置され、第1の面に第1の電極、第1の面と反対側の第2の面に第2の電極を有する複数の半導体素子と、第1の面側に設けられ、第1の電極と電気的に接続される第1の電極ブロックと、第2の面側に設けられ、第2の電極と電気的に接続される第2の電極ブロックと、を備える。
【選択図】図1
Description
本実施形態の半導体装置は、枠体と、枠体の内側に配置され、第1の面に第1の電極、第1の面と反対側の第2の面に第2の電極を有する複数の半導体素子と、第1の面側に設けられ、第1の電極と電気的に接続される第1の電極ブロックと、第2の面側に設けられ、第2の電極と電気的に接続される第2の電極ブロックと、を備える。そして、枠体が、局所的に圧力又は温度に対する耐性の低い脆弱部を有する。
本実施形態の半導体装置は、脆弱部が、枠体の膜厚が局所的に薄い部分である以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、枠体の外周部に樹脂の塗布層が設けられる以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、枠体内に金属製の網を備える以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体モジュールは、枠体と、枠体の内側に配置され、第1の面に第1の電極、第1の面と反対側の第2の面に第2の電極を有する複数の半導体素子と、第1の面側に設けられ、第1の電極と電気的に接続される第1の電極ブロックと、第2の面側に設けられ、第2の電極と電気的に接続される第2の電極ブロックと、を有し、枠体が、局所的に圧力又は温度に対する耐性の低い脆弱部を有する複数の半導体装置を備える。そして、
複数の半導体装置が、それぞれの脆弱部の位置が一方向に揃うように直列に接続される。
10a 第1の電極
10b 第2の電極
12 枠体
18 第1の電極ブロック
20 第2の電極ブロック
30 脆弱部
30a 孔
30b 栓
Claims (5)
- 局所的に圧力又は温度に対する耐性の低い脆弱部を有する枠体と、
前記枠体の内側に配置され、第1の面に第1の電極、第1の面と反対側の第2の面に第2の電極を有する複数の半導体素子と、
前記第1の面側に設けられ、前記第1の電極と電気的に接続される第1の電極ブロックと、
前記第2の面側に設けられ、前記第2の電極と電気的に接続される第2の電極ブロックと、
を備える半導体装置。 - 前記脆弱部が、前記枠体に設けられた孔と、前記孔を塞ぐ栓である請求項1記載の半導体装置。
- 前記栓が、樹脂である請求項2記載の半導体装置。
- 前記脆弱部が、前記枠体の膜厚が局所的に薄い部分である請求項1記載の半導体装置。
- 局所的に圧力又は温度に対する耐性の低い脆弱部を有する枠体と、前記枠体の内側に配置され、第1の面に第1の電極、第1の面と反対側の第2の面に第2の電極を有する複数の半導体素子と、前記第1の面側に設けられ、前記第1の電極と電気的に接続される第1の電極ブロックと、前記第2の面側に設けられ、前記第2の電極と電気的に接続される第2の電極ブロックと、を有する複数の半導体装置を備え、
前記複数の半導体装置が、それぞれの脆弱部の位置が一方向に揃うように直列に接続される半導体モジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015034539A JP6301857B2 (ja) | 2015-02-24 | 2015-02-24 | 半導体モジュール |
KR1020150099551A KR20160103486A (ko) | 2015-02-24 | 2015-07-14 | 반도체 장치 및 반도체 모듈 |
US14/828,256 US9559027B2 (en) | 2015-02-24 | 2015-08-17 | Semiconductor device and semiconductor module |
TW104128921A TW201631723A (zh) | 2015-02-24 | 2015-09-02 | 半導體裝置及半導體模組 |
CN201510555756.7A CN105914152B (zh) | 2015-02-24 | 2015-09-02 | 半导体装置及半导体模块 |
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Application Number | Priority Date | Filing Date | Title |
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JP2015034539A JP6301857B2 (ja) | 2015-02-24 | 2015-02-24 | 半導体モジュール |
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JP2016157819A true JP2016157819A (ja) | 2016-09-01 |
JP6301857B2 JP6301857B2 (ja) | 2018-03-28 |
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US (1) | US9559027B2 (ja) |
JP (1) | JP6301857B2 (ja) |
KR (1) | KR20160103486A (ja) |
CN (1) | CN105914152B (ja) |
TW (1) | TW201631723A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6576609B1 (ja) * | 2019-02-01 | 2019-09-18 | 三菱電機株式会社 | 半導体装置 |
JP6918270B1 (ja) * | 2020-07-14 | 2021-08-11 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10468357B2 (en) * | 2015-03-11 | 2019-11-05 | Intel Corporation | Stretchable electronics fabrication method with strain redistribution layer |
JP6359573B2 (ja) * | 2016-01-19 | 2018-07-18 | 株式会社東芝 | 半導体装置 |
EP3203509B1 (en) * | 2016-02-04 | 2021-01-20 | Services Pétroliers Schlumberger | Double-sided hermetic multichip module |
JP6585569B2 (ja) * | 2016-09-15 | 2019-10-02 | 株式会社東芝 | 半導体装置 |
JP2019102519A (ja) * | 2017-11-29 | 2019-06-24 | トヨタ自動車株式会社 | 半導体装置 |
CN112782552B (zh) * | 2019-11-05 | 2022-03-08 | 深圳第三代半导体研究院 | 一种压接式功率模块检测***及检测方法 |
EP4128334A1 (en) | 2021-05-28 | 2023-02-08 | Dynex Semiconductor Limited | Semiconductor device |
EP4136673A1 (en) * | 2021-05-28 | 2023-02-22 | Dynex Semiconductor Limited | Semiconductor device |
EP4143877A1 (en) | 2021-07-19 | 2023-03-08 | Dynex Semiconductor Limited | Semiconductor device having failure mode protection |
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JP2003218304A (ja) * | 2002-01-22 | 2003-07-31 | Toshiba Corp | 半導体装置 |
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2015
- 2015-02-24 JP JP2015034539A patent/JP6301857B2/ja active Active
- 2015-07-14 KR KR1020150099551A patent/KR20160103486A/ko not_active Application Discontinuation
- 2015-08-17 US US14/828,256 patent/US9559027B2/en active Active
- 2015-09-02 CN CN201510555756.7A patent/CN105914152B/zh active Active
- 2015-09-02 TW TW104128921A patent/TW201631723A/zh unknown
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JP2003218304A (ja) * | 2002-01-22 | 2003-07-31 | Toshiba Corp | 半導体装置 |
JP2004095992A (ja) * | 2002-09-03 | 2004-03-25 | Mitsubishi Electric Corp | 半導体装置 |
JP2006521685A (ja) * | 2003-02-18 | 2006-09-21 | ユーペック ユーロパイシェ ゲゼルシャフト ファー ライスタングシャルブライテル エムベーハー | 半導体モジュール |
JP2008084926A (ja) * | 2006-09-26 | 2008-04-10 | Mitsubishi Electric Corp | 圧接型半導体装置 |
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WO2020157960A1 (ja) * | 2019-02-01 | 2020-08-06 | 三菱電機株式会社 | 半導体装置 |
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JP6918270B1 (ja) * | 2020-07-14 | 2021-08-11 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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US20160247736A1 (en) | 2016-08-25 |
CN105914152A (zh) | 2016-08-31 |
JP6301857B2 (ja) | 2018-03-28 |
CN105914152B (zh) | 2018-09-21 |
TW201631723A (zh) | 2016-09-01 |
US9559027B2 (en) | 2017-01-31 |
KR20160103486A (ko) | 2016-09-01 |
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