JP2016029700A - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 229
- 239000000758 substrate Substances 0.000 title claims abstract description 151
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000003028 elevating effect Effects 0.000 claims abstract description 12
- 238000005192 partition Methods 0.000 claims description 149
- 239000002245 particle Substances 0.000 claims description 24
- 238000007789 sealing Methods 0.000 claims description 14
- 238000003672 processing method Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 145
- 235000012431 wafers Nutrition 0.000 description 69
- 238000012546 transfer Methods 0.000 description 20
- 230000000694 effects Effects 0.000 description 9
- 238000009826 distribution Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 ammonium fluorosilicate Chemical compound 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000010790 dilution Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図1は、本発明の一実施形態に係る基板処理装置である化学的酸化物除去(Chemical Oxide Removal;COR)処理を行うCOR処理装置を備えた処理システムを示す概略構成図である。この処理システム1は、被処理基板である半導体ウエハ(以下、単にウエハと記す)Wを搬入出する搬入出部2と、搬入出部2に隣接させて設けられた2つのロードロック室(L/L)3と、各ロードロック室3にそれぞれ隣接して設けられた、ウエハWに対してPHT(Post Heat Treatment)処理を行なうPHT処理装置4と、各PHT処理装置4にそれぞれ隣接して設けられた、ウエハWに対してCOR処理を行なうCOR処理装置5とを備えている。ロードロック室3、PHT処理装置4およびCOR処理装置5は、この順に一直線上に並べて設けられている。PHT処理装置4およびCOR処理装置5はウエハWを2枚ずつ処理するようになっている。
まず、被処理基板である表面にシリコン酸化膜を有するウエハWをキャリアC内に収納し、処理システム1に搬送する。処理システム1においては、大気側のゲートバルブ16を開いた状態で搬入出部2のキャリアCから第1ウエハ搬送機構11の搬送アーム11a、11bのいずれかによりウエハWを1枚ロードロック室3に搬送し、ロードロック室3内の第2ウエハ搬送機構17のピックに受け渡す。
次に、本発明の一実施形態に係るCOR処理装置について説明する。
図2および図3は、本発明の一実施形態に係るCOR処理装置を示す断面図であり、図2は隔壁部材を上昇させた状態を示し、図3は隔壁部材を下降させた状態を示す。
次に、このように構成されたCOR処理装置による処理動作について説明する。
本実施形態によれば、隔壁部材44を上昇させることにより、ウエハW1枚ずつの処理空間Sが形成されるので、他のウエハの干渉等がない条件で、均一にCOR処理を行うことができる。また、各処理空間Sに対し、ウエハWに対向してガス導入部材42からシャワー状に処理ガスを供給するので、ガス分布を均一にすることができ、処理分布をより均一にすることができる。しかも、処理済のガスを基板載置台41とインナーウォール43との間の円環状の排気空間68からインナーウォール43のスリットを介して排出するので、均一に排気することができ、処理空間Sにおけるガスの分布を一層均一にすることができる。また、隔壁部材44で囲まれた狭い空間内で処理するので、ガス使用量が減少して省エネルギー効果が得られるとともに、圧力調整時間の短縮によるスループット向上効果を得ることができる。
なお、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、上記実施形態では、COR処理装置に本発明を適用した例を示したが、これに限らず、ガスによる処理であれば、例えば化学蒸着法(CVD法)による成膜処理等の他の処理にも適用することができる。また、プラズマを利用した処理であってもよい。
2;搬入出部
3;ロードロック室
4;PHT処理装置
5;COR処理装置
6;制御部
40;チャンバー
41;基板載置台
42;ガス導入部材
43;インナーウォール
44、44′;隔壁部材
45、45′;昇降機構
46;ガス供給機構
47;排気機構
68;排気空間
77;ヒーター
74,75;シール部材
81;アクチュエータ
82;駆動軸
83;ガイド軸
93;滑り部材
S;処理空間
W;半導体ウエハ(被処理基板)
Claims (23)
- 真空雰囲気下で被処理基板に処理ガスにより所定の処理を施す基板処理装置であって、
真空雰囲気に保持され、被処理基板が収容されるチャンバーと、
前記チャンバー内で被処理基板を載置する基板載置台と、
前記チャンバー内に処理ガスを含むガスを導入するガス導入部材と、
前記チャンバー内に昇降可能に設けられ、前記基板載置台の上方の被処理基板を含む領域に処理空間を規定する隔壁を形成するための隔壁部材と、
前記隔壁部材を昇降させる昇降機構と
を備えることを特徴とする基板処理装置。 - 前記隔壁部材は、処理空間を規定するための筒状部と、筒状部の上部に鍔状に設けられたフランジ部とを有することを特徴とする請求項1に記載の基板処理装置。
- 前記隔壁部材は、前記フランジ部内に設けられたヒーターを有し、前記ヒーターの熱により前記処理空間の均熱性を高めることを特徴とする請求項2の基板処理装置。
- 前記ヒーターは、前記フランジ部内の大気圧に保持された空間に設けられていることを特徴とする請求項3に記載の基板処理装置。
- 真空雰囲気下で複数の被処理基板に処理ガスにより所定の処理を施す基板処理装置であって、
真空雰囲気に保持され、複数の被処理基板が収容されるチャンバーと、
前記チャンバー内でそれぞれ被処理基板を載置する複数の基板載置台と、
前記チャンバー内に処理ガスを含むガスを導入するガス導入部材と、
前記チャンバー内に昇降可能に設けられ、前記複数の基板載置台の上方の被処理基板を含む領域にそれぞれ処理空間を規定する隔壁を形成するための隔壁部材と、
前記隔壁部材を昇降させる昇降機構と
を備えることを特徴とする基板処理装置。 - 前記隔壁部材は、複数の処理空間を規定する隔壁を一括して形成することを特徴とする請求項5に記載の基板処理装置。
- 前記ガス導入部材は、前記処理空間に対応して複数設けられ、前記各ガス導入部材から対応する前記処理空間に処理ガスが導入されることを特徴とする請求項5または請求項6に記載の基板処理装置。
- 前記隔壁部材は、各処理空間を規定するための複数の筒状部と、前記複数の筒状部の上部に共通して鍔状に設けられたフランジ部とを有することを特徴とする請求項5から請求項7のいずれか1項に記載の基板処理装置。
- 前記隔壁部材は、前記フランジ部内に設けられたヒーターを有し、前記ヒーターの熱により前記処理空間の均熱性を高めることを特徴とする請求項8の基板処理装置。
- 前記ヒーターは、前記フランジ部内の大気圧に保持された空間に設けられていることを特徴とする請求項9に記載の基板処理装置。
- 前記ガス導入部材は、前記基板載置台に対向して設けられ、前記処理空間を形成する際に前記隔壁部材と前記ガス導入部材との間をシールする第1のシール部材をさらに備えることを特徴とする請求項1から請求項10のいずれか1項に記載の基板処理装置。
- 前記第1のシール部材は、本体部と、本体部から斜めに突出し、シール部を構成するリップ部とを有するリップシールであり、前記隔壁部材と前記ガス導入部材との間のクリアランスが1.6〜3.6mmの範囲になるようにシールすることを特徴とする請求項11に記載の基板処理装置。
- 前記基板載置台の周囲に間隔をあけて設けられたスリットを有するインナーウォールと、前記処理空間を形成する際に前記隔壁部材と前記インナーウォールとの間をシールする第2のシール部材とをさらに備え、前記処理空間からの排気は、前記基板載置台とインナーウォールの間の空間から前記スリットを介して行われることを特徴とする請求項11または請求項12に記載の基板処理装置。
- 前記第2のシール部材は、本体部と、本体部から斜めに突出し、シール部を構成するリップ部とを有するリップシールであり、前記隔壁部材と前記インナーウォールとの間のクリアランスが1.6〜3.6mmの範囲になるようにシールすることを特徴とする請求項13に記載の基板処理装置。
- 前記隔壁部材の内側と外側の差圧が300Torr以下であることを特徴とする請求項12または請求項14に記載の基板処理装置。
- 前記昇降機構は、前記隔壁部材を昇降動可能なアクチュエータと、アクチュエータから延び、先端が前記隔壁部材に取り付けられた駆動軸と、先端が前記隔壁部材に取り付けられ、前記チャンバーの外部に延びる複数のガイド軸とを有し、前記ガイド軸は、真空状態に保持された前記チャンバーの内部と大気圧空間である前記チャンバーの外部との差圧による押し上げ力により上昇して前記隔壁部材を上昇させることを特徴とする請求項1から請求項15のいずれか1項に記載の基板処理装置。
- 前記ガイド軸は、前記隔壁部材に接続された上部軸と、前記上部軸に接続された下部軸とを有し、前記上部軸と前記下部軸とは、これらとの間で滑りを生じる滑り部材を介して、滑りを許容した状態で結合され、熱膨張差を吸収可能に構成されていることを特徴とする請求項16に記載の基板処理装置。
- 前記ガス導入部材は、前記基板載置台に対向して設けられ、下面に多数のガス吐出孔を有し、前記処理空間にシャワー状に処理ガスを吐出することを特徴とする請求項1から請求項17のいずれか1項に記載の基板処理装置。
- 前記ガス導入部材からのガス導入を制御する制御部をさらに有し、前記制御部は、前記隔壁部材を昇降させる際に、前記チャンバー内にパーティクルが排気側に導かれるガスの流れを形成して、被処理基板へのパーティクルの付着を抑制するように前記ガス導入部材からガスを導入させることを特徴とする請求項1から請求項18のいずれか1項に記載の基板処理装置。
- 前記制御部は、前記隔壁部材を昇降させる際に、前記ガスのガス流量が500〜1000sccm、前記チャンバー内の圧力が1000mTorr以上となるように前記ガス導入部材からのガスの導入を制御することを特徴とする請求項19に記載の基板処理装置。
- 真空雰囲気に保持されたチャンバー内で被処理基板を基板載置台に載置された状態とし、前記基板載置台の上方の被処理基板を含む領域に処理空間を規定する隔壁を形成するための隔壁部材を昇降可能に設けて、前記隔壁部材により規定された前記処理空間内にガス導入部材から処理ガスを導入して前記被処理基板に所定の処理を施す基板処理方法であって、
前記基板載置台へ被処理基板を搬送可能なように前記隔壁部材を下降させた状態とする工程と、
被処理基板を前記チャンバー内に搬入し、前記基板載置台に載置する工程と、
前記隔壁部材を上昇させて前記チャンバー内に前記処理空間を形成する工程と、
前記処理空間内に前記処理ガスを導入して前記被処理基板に所定の処理を施す工程と、
前記被処理基板を前記チャンバーから搬出可能なように前記隔壁部材を下降させる工程と、
前記隔壁部材を下降させた状態で、前記被処理基板を前記チャンバーから搬出する工程と
を有することを特徴とする基板処理方法。 - 前記隔壁部材を昇降させる際に、前記チャンバー内にパーティクルが排気側に導かれるガスの流れを形成して、被処理基板へのパーティクルの付着を抑制するように前記チャンバー内にガスを導入することを特徴とする請求項21に記載の基板処理方法。
- 前記隔壁部材を昇降させる際に、前記ガスのガス流量が500〜1000sccm、前記チャンバー内の圧力が1000mTorr以上となるようにガスを導入することを特徴とする請求項22に記載の基板処理方法。
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WO2019107191A1 (ja) * | 2017-11-30 | 2019-06-06 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7229061B2 (ja) | 2019-03-26 | 2023-02-27 | 東京エレクトロン株式会社 | 基板のエッチング装置及びエッチング方法 |
TWI825290B (zh) * | 2019-03-26 | 2023-12-11 | 日商東京威力科創股份有限公司 | 基板之蝕刻裝置及蝕刻方法 |
JP2020161596A (ja) * | 2019-03-26 | 2020-10-01 | 東京エレクトロン株式会社 | 基板のエッチング装置及びエッチング方法 |
JP2021050366A (ja) * | 2019-09-20 | 2021-04-01 | 東京エレクトロン株式会社 | エッチング装置及びエッチング方法 |
JP7379993B2 (ja) | 2019-09-20 | 2023-11-15 | 東京エレクトロン株式会社 | エッチング装置及びエッチング方法 |
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JP6541374B2 (ja) | 2019-07-10 |
KR101850255B1 (ko) | 2018-04-18 |
TW201618211A (zh) | 2016-05-16 |
TWI645487B (zh) | 2018-12-21 |
KR20170134287A (ko) | 2017-12-06 |
CN108878328A (zh) | 2018-11-23 |
CN105304526B (zh) | 2018-07-20 |
CN105304526A (zh) | 2016-02-03 |
US9490151B2 (en) | 2016-11-08 |
KR101805256B1 (ko) | 2017-12-05 |
US20160027672A1 (en) | 2016-01-28 |
KR20160012942A (ko) | 2016-02-03 |
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