JP2015504242A - 半導体素子及びそれを製造する方法 - Google Patents
半導体素子及びそれを製造する方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 274
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 238
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 58
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims description 80
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 29
- 150000004767 nitrides Chemical class 0.000 claims description 29
- 239000002073 nanorod Substances 0.000 claims description 25
- 239000010410 layer Substances 0.000 description 382
- 230000008569 process Effects 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000012535 impurity Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- -1 gallium nitride compound Chemical class 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Abstract
Description
Claims (22)
- 導電性基板と、
前記基板上に位置する窒化ガリウム系列の半導体積層体と、を含み、
前記半導体積層体は半極性半導体層の活性層を含む発光ダイオード。 - 前記窒化ガリウム系列の半導体積層体は、半極性窒化ガリウム基板上で成長された各半導体層を含む、請求項1に記載の発光ダイオード。
- 前記半極性窒化ガリウム基板は、C面に対して15゜〜85゜範囲の角度だけ傾斜した主面を有するミスカット半極性窒化ガリウム基板である、請求項2に記載の発光ダイオード。
- 前記導電性基板は前記半極性窒化ガリウム基板である、請求項3に記載の発光ダイオード。
- 前記基板は金属基板である、請求項1に記載の発光ダイオード。
- 前記基板と前記半導体積層体との間に位置する反射層をさらに含む、請求項5に記載の発光ダイオード。
- 前記半導体積層体上に位置する透明酸化層をさらに含む、請求項1に記載の発光ダイオード。
- 前記透明酸化層は凹凸パターンを有する、請求項7に記載の発光ダイオード。
- 前記透明酸化層はITOまたはZnOである、請求項8に記載の発光ダイオード。
- 前記透明酸化層と接する前記半導体積層体の上部面は凹凸パターンを有する、請求項8に記載の発光ダイオード。
- C面に対して15゜〜85゜範囲の角度だけ傾斜した主面を有するミスカット半極性窒化ガリウム基板を準備し、
前記基板上に半極性窒化ガリウム系列の各半導体層を成長させることによって半導体積層体を形成することを含む発光ダイオードの製造方法。 - 前記半導体積層体上に透明酸化層を形成することをさらに含む、請求項11に記載の発光ダイオードの製造方法。
- 前記透明酸化層は凹凸パターンを有する、請求項12に記載の発光ダイオードの製造方法。
- 前記半導体積層体上に反射層を形成し、
前記反射層上に支持基板を貼りつけ、
前記半極性窒化ガリウム基板を除去することをさらに含む、請求項11に記載の発光ダイオードの製造方法。 - 前記半極性窒化ガリウム基板上に半導体積層体を形成する前に、電気化学的エッチング技術を用いて前記基板上に多孔構造の窒化物層を形成することをさらに含む、請求項14に記載の発光ダイオードの製造方法。
- 前記半極性窒化ガリウム基板は、前記多孔構造の窒化物層を用いて前記半導体積層体から分離される、請求項15に記載の発光ダイオードの製造方法。
- 前記半極性窒化ガリウム基板が除去された後、前記半導体積層構造体の表面に凹凸パターンを形成することをさらに含む、請求項14に記載の発光ダイオードの製造方法。
- 前記半導体積層体上に透明酸化層を形成することをさらに含む、請求項17に記載の発光ダイオードの製造方法。
- 前記透明酸化層は凹凸パターンを有する、請求項18に記載の発光ダイオードの製造方法。
- 前記透明酸化層はITOまたはZnOである発光ダイオードの製造方法。
- 支持基板を用意し、
前記支持基板の一側表面上にナノロッドを形成し、
前記ナノロッド上にシード層を形成することを含む半導体素子の製造方法。 - 複数の基板を半導体素子製造装置内に水平に同時にローディングし、
前記複数の基板を処理し、
前記半導体素子製造装置から前記複数の基板を同時にアンローディングすることを含む半導体素子の製造方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
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KR10-2011-0134129 | 2011-12-14 | ||
KR1020110134129A KR20130067514A (ko) | 2011-12-14 | 2011-12-14 | 반도체 소자 제조 방법 |
KR1020110135513A KR101899479B1 (ko) | 2011-12-15 | 2011-12-15 | 반극성 발광 다이오드 및 그것을 제조하는 방법 |
KR10-2011-0135513 | 2011-12-15 | ||
KR10-2011-0139378 | 2011-12-21 | ||
KR1020110139378A KR20130071901A (ko) | 2011-12-21 | 2011-12-21 | 반도체 소자 제조 방법 |
PCT/KR2012/010765 WO2013089417A1 (en) | 2011-12-14 | 2012-12-12 | Semiconductor device and method of fabricating the same |
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JP2015504242A true JP2015504242A (ja) | 2015-02-05 |
JP6018219B2 JP6018219B2 (ja) | 2016-11-02 |
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US (1) | US9209358B2 (ja) |
JP (1) | JP6018219B2 (ja) |
CN (1) | CN103999245A (ja) |
WO (1) | WO2013089417A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2018538443A (ja) * | 2015-11-25 | 2018-12-27 | ユミコア・アクチエンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフトUmicore AG & Co.KG | 炭化水素中のアルキル−インジウム化合物の溶液を使用した有機金属気相堆積法 |
JP2020534687A (ja) * | 2017-09-15 | 2020-11-26 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 劈開技法を用いて基板を除去する方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2015033638A1 (ja) | 2013-09-03 | 2017-03-02 | シャープ株式会社 | 半導体発光素子 |
KR101834785B1 (ko) * | 2013-10-21 | 2018-03-06 | 센서 일렉트로닉 테크놀로지, 인크 | 합성물 반도체 층을 포함하는 이종 접합 구조 |
GB2526078A (en) * | 2014-05-07 | 2015-11-18 | Infiniled Ltd | Methods and apparatus for improving micro-LED devices |
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US9209358B2 (en) | 2015-12-08 |
US20140353679A1 (en) | 2014-12-04 |
JP6018219B2 (ja) | 2016-11-02 |
CN103999245A (zh) | 2014-08-20 |
WO2013089417A1 (en) | 2013-06-20 |
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